ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VCE = 4500
V
IC = 40
A
Die size: 14.3 x 14.3 mm
Doc. No. 5SYA1626-03 July 06
• Low loss, rugged SPT technology
• Smooth switching for good EMC
• Emitter metallisation optimized for press-pack packaging
• Passivation: SIPOS and Silicon Nitride plus Polyimide
Maximum rated values 1)
Parameter Symbol Conditions min max
Unit
Collector-emitter voltage VCES VGE = 0 V 4500
V
DC collector current IC 40 A
Peak collector current ICM Limited by Tvjmax 80 A
Gate-emitter voltage VGES -20 20 V
IGBT short circuit SOA tpsc VCC = 3400 V, VCEM ≤ 4500 V
VGE ≤ 15 V, Tvj ≤ 125 °C 10 µs
Junction temperature Tvj -40 125 °C
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
IGBT-Die
5SMX 12N4507
5SMX 12N4507
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1626-03 July 06 page 2 of 5
IGBT characteristic values 2)
Parameter Symbol Conditions min typ max
Unit
Collector (-emitter)
breakdown voltage V(BR)CES V
GE = 0 V, IC = 1 mA, Tvj = 25 °C 4500
V
Tvj = 25 °C 3.0 V
Collector-emitter
saturation voltage VCE sat IC = 40 A, VGE = 15 V Tvj = 125 °C 4.0 V
Tvj = 25 °C 100 µA
Collector cut-off current ICES VCE = 4500 V, VGE = 0 V Tvj = 125 °C 2500
µA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -500
500 nA
Gate-emitter threshold voltage VGE(TO) IC = 10 mA, VCE = VGE, Tvj = 25 °C 5.5 7.5 V
Gate charge Qge IC = 40 A, VCE = 2800 V, VGE = -15 ..15 V 500 nC
Input capacitance Cies 7.45
Output capacitance Coes 0.28
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C 0.07 nF
Internal gate resistance RGint 5 Ω
Tvj = 25 °C 160
Turn-on delay time td(on) Tvj = 125 °C 155 ns
Tvj = 25 °C 100
Rise time tr
VCC = 2800 V, IC = 40 A,
RG = 33 Ω, VGE = ±15 V,
Lσ = 6000 nH,
inductive load Tvj = 125 °C 105 ns
Tvj = 25 °C 630
Turn-off delay time td(off) Tvj = 125 °C 715 ns
Tvj = 25 °C 425
Fall time tf
VCC = 2800 V, IC = 40 A,
RG = 33 Ω, VGE = ±15 V,
Lσ = 6000 nH,
inductive load Tvj = 125 °C 455 ns
Tvj = 25 °C 55
Turn-on switching energy Eon
VCC = 2800 V, IC = 40 A,
VGE = ±15 V, RG = 33 Ω,
Lσ = 6000 nH,
inductive load,
FWD: ½ 5SLX12N4506 Tvj = 125 °C 85
mJ
Tvj = 25 °C 165
Turn-off switching energy Eoff
VCC = 2800 V, IC = 40 A,
VGE = ±15 V, RG = 33 Ω,
Lσ = 6000 nH,
inductive load Tvj = 125 °C 205 mJ
Short circuit current ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 3400 V, VCEM ≤ 4500 V 200 A
2) Characteristic values according to IEC 60747 - 9
5SMX 12N4507
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1626-03 July 06 page 3 of 5
Mechanical properties
Parameter Unit
Overall die
L x W 14.3 x 14.3 mm
exposed
front metal
L x W (except gate pad) 9.0 x 9.0 mm
gate pad L x W 1.51 x 1.48 mm
Dimensions
thickness 530 ± 20 µm
front (E) AlSi1 + Al 4 + 8 µm
Metallization 3) back (C) AlSi1 + TiNiAg 1.8 + 1.2 µm
3) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline drawing
Note: all dimensions are shown in mm
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX.
This product has been designed and qualified for Industrial Level.
5SMX 12N4507
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1626-03 July 06 page 4 of 5
0
10
20
30
40
50
60
70
80
0 1 2 3 4 5 6 7
VCE [V]
IC [A]
V
GE = 15 V
125 °C
25 °C
0
10
20
30
40
50
60
70
80
012345678910111213
VGE [V]
IC [A]
V
CE = 20 V
125 °C
25 °C
Fig. 1 Typical onstate characteristics Fig. 2 Typical transfer characteristics
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
020 40 60 80 100
IC [A]
Eon, Eoff [J]
Eon
Eoff
V
CC = 2800 V
RG = 33 ohm
V
GE = ±15 V
Tvj = 125 °C
Lσ = 6 µH
0
0.05
0.1
0.15
0.2
0.25
0.3
050 100 150 200 250
RG [ohm]
Eon, Eoff [J]
V
CC = 2800 V
IC = 40 A
V
GE = ±15 V
Tvj = 125 °C
Lσ = 6 µH
Eon
Eoff
Fig. 3 Typical switching characteristics vs
collector current Fig. 4 Typical switching characteristics vs
gate resistor
5SMX 12N4507
ABB Switzerland Ltd, Semiconductors res
erves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1626-03 July 06
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
0
5
10
15
20
0.0 0.1 0.2 0.3 0.4 0.5
Qg [µC]
VGE [V]
V
CC
= 2800 V
V
CC = 3400 V
IC = 40 A
Tvj = 25 °C
0.01
0.1
1
10
0 5 10 15 20 25 30 35
VCE [V]
C [nF]
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
Cies
Coes
Cres
Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs
collector-emitter voltage
