STA SGS-THOMSON TYN 0510 ---> FEATURES a HIGH SURGE CAPABILITY = HIGH ON-STATE CURRENT A 7 + K a HIGH STABILITY AND RELIABILITY @ DESCRIPTION The TYN 0510 ---> TYN 1010 Family of Silicon Con- trolled Rectifiers uses a high performance glass passi- K vated technology. AG This general purpose Family of Silicon Controlled TO 220 AB Rectifiers is designed for power supplies up to (Plastic) 400Hz on resistive or inductive load. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current Te = 85 C 10 A (180 conduction angle) IT(AV) Average on-state current Te = 85C 6.4 A (180 conduction angle, single phase circuit) ITSM Non repetitive surge peak on-state current tp = 8.3 ms 105 A ( Tj initial = 25C ) tp = 10 ms 100 12 l2t value tp = 10 ms 50 Aes di/dt Critical rate of rise of on-state current 50 Aus Gate supply : Iq = 150 mA dig/dt = 1 A/us Tstg Storage and operating junction temperature range - 40 to+ 150 6) Tj - 40 to + 125 i 7 Ti Maximum lead temperature for soldering during 10 s at 4.5 mm 230 C from case Symbol Parameter TYN Unit 0510 | 110 } 210 | 410 | 610 | 810 | 1010 VDRM Repetitive peak off-state voltage 50 100 | 200 | 400 | 600 | 800 | 1000 Vv VRRM Tj= 125C July 1991 1/4 107 TYN 0510 ---> TYN 1010 THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-a) {Junction to ambient 60 C/W Rth (j-c) DC | Junction to case for DC 2.5 C GATE CHARACTERISTICS (maximum values) PG (AV) = 1W Pg = 40W (tp = 20s) IGM = 4A (tp = 20 us) VEGM = 16V (tp = 20 us) VrReme= 5V. ELECTRICAL CHARACTERISTICS Symbol Test Conditions Vaiue Unit let Vp=12V) (DC) AL=33Q Tj=25C MAX 15 mA VGT Vp=12V) (DC) RL=33Q Tj=25C MAX 1.5 v Vap VD=VDRM RL=3.3kaQ Tj= 110C | MIN 0.2 Vv tgt Vp=VoRM |G = 90mA Tj=25C TYP 2 ps dig/dt = 0.8A/ps It Ig= 1.2 igt Tj=25C | TYP 50 mA IH IT=100mA gate open Tj=25C MAX 30 mA VIM ITM= 20A tp= 380us Tj=25C | MAX 1.6 Vv IDRM VDRM Rated Tj=25C MAX 0.01 mA IRRM VRRM Rated Te 110C 2 aV/dt Linear slope up to Vp=67%VoRM Tj= 110C | MIN 200 Vius gate open Tq Vp=67%VDRM 'lTM=20A Vpr= 25V Tj= 110C | TYP 70 us dITM/dt=30 A/us dVp/dt= 50V/us 2/4 108 f SGS-THOMSON SA Rncrosuecraomcs Fig.1 : Maximum average power dissipation versus average on-state current. P (W) 12 360 al. ne Ke oc Vy /) * 180 6 V4 GQ: 120 4 Qa: 30 Qi: 6c" | 2 - Ql 30 Itay) (A) 0 L l L 1 1 o 12 3 4 5 6 7 8&8 9 10 Fig.3 : Average on-state current versus case temperature. (ayy (A) 12 Tease( "C) 0 QO 10 20 30 40 50 60 70 80 90 100110 Fig.5 : Relative variation of gate trigger current versus junction temperature. Igti Tj) _th{Tjl : Igt( Tj 25 C. In{T}=25 C 2.5 2 Igt 1.5 L] 9 1 th S| 0.6 tt Tj (C) roa 9 -40-30-20-10 0 10 20 30 40 50 60 70 80 90 100110 f $GS-THOMSON A MICROELECTRONICS TYN 0510 ---> TYN 1010 Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact. Tease (C) P (W) 12 C/W |780 C/W 10 C/W c/w 8 90 g| a 180 4 100 27 tamb ("C) 110 0 20 40 60 80 100 120 140 Fig.4 : Thermal transient impedance junction to ambient versus pulse duration. Zth (C/W) 1.0E-01 10E-03 106-02 10E-01 106-00 10E+01 1.06902 106-03 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. | tsa fA) Tj initial 25C Number of cycles 1 10 100 1000 3/4 109 TYN 0510 ---> TYN 1010 Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t < 10 ms, and corresponding value of let. Itsm_ (A). [t (A78) Tj initial = 25C Fig.8 : On-state characteristics (maximum values). Im (A) 1000 Tj initial 25C i 100 Tj max = Tj max Vto 0.9V Rt -0.035a Vim(v) 10 1 T' 0 1 2 3 4 5 PACKAGE MECHANICAL DATA (in millimeters) TO 220 AB Plastic 10.94 0.1 a8 RE 4.65 10.17 sufen + 0.90F _ 1.25 > 0.10 + eo &S 2.8 2-8 [6.3 + 0.67 15.2 ~- 0.97 boy a 2.54? 0.25 2.54 + 0.25 12.7 min 414.7 max 0.5 0.15 12-4 10.3 kK AG Cooling method : by conduction (method C) Marking : type number Weight : 29 Polarity : NA Stud torque :NA 4/4 {yz SGS-THOMSON A microsusemomes 110