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Collector-emitter voltage VCES VGE = 0 V 1700 V
DC collector current ICTc = 80 °C 2400 A
Peak collector current ICM tp = 1 ms, Tc = 8 0 ° C 4800 A
Gate-emitter voltage VGES -20 20 V
Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) 16700 W
DC forward current IF2400 A
Peak forward current IFM 4800 A
Surge current IFSM VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave 22000 A
IGBT short circuit SOA tpsc VCC = 1000 V, V CEM CHIP ≤ 1700 V
VGE ≤ 15 V, Tvj ≤ 125 ° C 10 µs
Isolation voltage Visol 1 mi n , f = 5 0 Hz 4000 V
Junction temperature Tvj 150 °C
Junction ope rating te mperature Tvj(op) -40 125 °C
Storage temperature Tstg -40 125 °C
M1Base-heatsink, M6 screws 4 6
Mounting torques M2Main terminals, M8 screws 8 10 Nm
1) Maximum rated values indicate limits beyond which damage to the device may occur
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Doc. No. 5SYA 1555-01 Oct 03 page 2 of 9
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Collector (-emitter)
breakdown volt age V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C 1700 V
Tvj = 25 °C2.32.6V
Collector-emitter 2)
saturation vo lta ge VCE sat IC = 2400 A, VGE = 15 V Tvj = 125 °C2.62.9V
Tvj = 25 °C12mA
Collecto r cut-off current ICES VCE = 1700 V, VGE = 0 V Tvj = 125 °C 120 mA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C-500 500 nA
Gate-emitter threshold voltage VGE(TO) IC = 240 mA, VCE = VGE, Tvj = 25 °C4.5 6.5V
Gate charge Qge IC = 2400 A, VCE = 900 V,
VGE = -15 V .. 15 V 22 µC
Input capacitance Cies 228
Output capacitance Coes 22.1
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C9.6 nF
Tvj = 25 °C 300
Turn-on delay time td(on) Tvj = 125 °C 340 ns
Tvj = 25 °C 250
Rise time tr
VCC = 900 V,
IC = 2400 A,
RG = 0.56 Ω,
VGE = ±15 V,
Lσ = 60 nH, inductive load Tvj = 125 °C 260 ns
Tvj = 25 °C 960
Turn-off delay time td(off) Tvj = 125 °C 1050 ns
Tvj = 25 °C 250
Fall time tf
VCC = 900 V,
IC = 2400 A,
RG = 0.56 Ω,
VGE = ±15 V,
Lσ = 60 nH, inductive load Tvj = 125 °C 270 ns
Tvj = 25 °C 420
Turn-on switching energy Eon
VCC = 900 V, IC = 2400 A,
VGE = ±15, RG = 0.56 Ω,
Lσ = 60 nH, inductive load Tvj = 125 °C 600 mJ
Tvj = 25 °C 810
Turn-off switching energy Eoff
VCC = 900 V, IC = 2400 A,
VGE = ±15, RG = 0.56 Ω,
Lσ = 60 nH, inductive load Tvj = 125 °C 980 mJ
Short circuit current ISC tpsc  V9GE = 15 V, Tvj = 125 °C,
VCC = 1000 V, VCEM CHIP 1700 V 11300 A
Module stray inductance Lσ CE 10 nH
TC = 25 °C0.06
Resistance, terminal-chip RCC’+EE’TC = 125 °C0.085m
2) Collector emitter saturation voltage is given at chip level
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Doc. No. 5SYA 1555-01 Oct 03 page 3 of 9
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Tvj = 25 °C 1.65 2.0
Contino us forward vo ltage 3) VFIF = 2400 A Tvj = 125 °C1.72.0
V
Tvj = 25 °C 1460
Peak reverse recovery
current IRM Tvj = 125 °C 1880 A
Tvj = 25 °C 575
Recovered charge QRR Tvj = 125 °C 1025 µC
Tvj = 25 °C 580
Reverse recovery time trr Tvj = 125 °C 890 ns
Tvj = 25 °C 410
Reverse recovery energy E rec
VCC = 900 V,
IF = 2400 A,
VGE = ±15 V,
RG = 0.56 Ω
Lσ = 60 nH
induct ive loa d
Tvj = 125 °C 720 mJ
3) Forward voltage is given at chip level
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IGBT thermal resistance
junction to case Rth(j-c)IGBT 0.007 K/W
Diode thermal resistance
junction to case Rth(j-c)DIODE 0.012 K/W
Thermal resistance case
to heatsink Rth(c-h) per module, λ grease = 1W/m x K 0.006 K/W
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Dimensions L x W x H Typical , see outline drawing 190 x 140 x 38 mm
Term. to base: 23
Clearance distance DCaccording to IEC 60664-1
and EN 50124-1 Term. to term: 19 mm
Term. to base: 33
Surface creepage distance DSC according to IEC 60664-1
and EN 50124-1 Term. to term: 32 mm
Weight 1500 gr
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Doc. No. 5SYA 1555-01 Oct 03 page 4 of 9
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Doc. No. 5SYA 1555-01 Oct 03 page 5 of 9
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VCE [V]
I
C
[A]
VGE = 15 V
125 °C
25 °C
0
400
800
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1600
2000
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VGE [V]
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125 °C
25 °C
VCE = 25 V
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11V
13V
15V
17V
Tvj = 25 °C
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400
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9V
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Doc. No. 5SYA 1555-01 Oct 03 page 6 of 9
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3.0
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IC [A]
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on
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off
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VCC = 900 V
RG = 0.56 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
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VCC = 900 V
IC = 2400 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
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Eoff
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vs collector current )LJ Typical switching energies per pulse
vs gate resistor
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1
10
0 1000 2000 3000 4000 5000
IC [A]
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
VCC = 900 V
RG = 0.56 o hm
VGE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
td(on)
td(off)
tr
tf
0.1
1
10
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RG [ohm]
t
d(on)
, t
r
, t
d(off)
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f
[µs]
VCC = 900 V
IC = 2400 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
td(on)
td(off)
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Doc. No. 5SYA 1555-01 Oct 03 page 7 of 9
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10
100
1000
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VCE [V]
C [nF]
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
Cies
Coes
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10
15
20
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GE
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VCC = 900 V
VCC = 1300
IC = 2400 A
Tvj = 25 °C
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IF [A]
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rec
[mJ]
0
500
1000
1500
2000
2500
I
RM
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RR
[µC]
VCC = 900 V
RG = 0.56 ohm
Tvj = 125 °C
Lσ = 60 nH
QRR
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rec
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0
200
400
600
800
1000
1200
1400
1600
1800
2000
I
RM
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RR
[µC]
VCC = 900 V
IF = 2400 A
Tvj = 125 °C
Lσ = 60 nH
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guarantee expressed or implied is made regarding delivery, performance or suitability.
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$%%6ZLW]HUODQG/WG Doc. No. 5SYA 1555-01 Oct 03
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Fabri kstra sse 3
CH-5600 Lenzburg, Switzerland
Telepho ne +41 (0)58 586 141 9
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
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