LESHAN RADIO COMPANY, LTD.
MMBV2101~MMBV2109 –2/3
MV2101~MV2115
Min Nom M a x Ty p Min Typ Max
MMBV2101LT1/MV2101 6.1 6. 8 7. 5 450 2.5 2. 7 3 .2
MMBV2103LT1 9.0 10 11 40 0 2 .5 2.9 3.2
MV2104 10.8 12 13.2 400 2.5 2.9 3.2
MMBV2105LT1/MV2105 13.5 15 16.5 400 2.5 2.9 3.2
MMBV2107LT1 19.8 22 24.2 350 2.5 2.9 3.2
MMBV2108LT1/MV2108 24.3 27 29.7 300 2.5 3.0 3.2
MMBV2109LT1/MV2109 29.7 33 36.3 200 2.5 3.0 3.2
MV2111 42.3 47 51.7 150 2.5 3.0 3.2
MV2115 90 100 110 100 2.6 3.0 3.3
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk.
Use the device title and drop the “T1” suffix when ordering any of these devices in bulk.
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
MV2101 MV2104 MV2105 MV2108 MV2109
MV2111 MV2115
C T , Diode Capacitance
V R = 4.0 Vdc, f = 1.0 MHz
pF
T R, Tuning Ratio
C 2 /C 30
f = 1.0 MHz
Q, Figure of Merit
V R = 4.0 Vdc,
f = 50 MHz
P ARAMETER TEST METHODS
1. C T , DIODE CAPACITANCE
(C T = C C + C J ). C T is measured at 1.0 MHz using a
ca-pacitance bridge (Boonton Electronics Model
75A or equivalent).
2. T R, TUNING RATIO
T R is the ratio of C T measured at 2.0 Vdc divided by
C T measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
ad-mittance bridge at the specified frequency and
substitut-ing in the following equations:
Q = 2πfC
G
(Booton Electronics Model 33As8 or equivalent).Use
Lead Length
~
1/16”.
4.T CC,DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TCC is guaranteed by comparing CT at VR=4.0Vdc,f=1.0MHz,
TA= – 65°C with CT at VR=4.0Vdc,f=1.0MHz,TA= +85°C in the
following equation,which defines TC C:
CT(+85°C)– C
T(–65°C )10
6
TC C=85+65 . C T(25°C)
Accuracy limited by measurement of CT to±0.1pF.
Device
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