Patent Pending PHOTODIODE Si photodiode array S8592 1-D photodiode array with low cross-talk S8592 is a 1-D 16-element Si photodiode array formed by micro-machining techniques to provide exceptionally low cross-talk. (Patent pending) Features Applications l Low cross-talk l 1-D 16-element photodiode array l Active area: 1.45 x 0.9 mm (x 16 elements) Element pitch: 1.0 mm l 18-pin DIP ceramic package l Low-light-level detection l Spectrophotometers l Position detection Absolute maximum ratings (Ta=25 C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 5 -20 to +60 -20 to +80 Unit V C C Electrical and optical characteristics (Ta=25 C, unless otherwise noted, per 1 element) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Terminal capacitance Rise time Symbol l lp S ID Ct tr Condition l=410 nm VR=10 mV VR=0 V, f=10 kHz VR=0 V, RL=1 kW Min. - Typ. 320 to 1000 720 0.28 1 60 0.15 Max. 20 - Unit nm nm A/W pA pF s 1 Si photodiode array Dark current vs. reverse voltage Spectral response (Typ. Ta=25 C) (Typ. Ta=25 C) 0.6 10 nA 1 nA QE=100 % DARK CURRENT PHOTO SENSITIVITY (A/W) 0.5 0.4 0.3 0.2 100 pA 10 pA 1 pA 0.1 0 200 400 600 800 1000 100 fA 0.01 1200 WAVELENGTH (nm) 0.1 1 10 100 REVERSE VOLTAGE (V) KMPDB0198EA KMPDB0199EA Terminal capacitance vs. reverse voltage Cross-talk characteristic (Ta=25 C, =680 nm, spot light size: 7 m (1/e2), VR=0 V, terminals of elements not under measurement are left open.) (Typ. Ta=25 C) 120 RELATIVE SENSITIVITY (%) TERMINAL CAPACITANCE 10 nF 1 nF 100 pF 10 pF 1 pF 0.1 1 100 80 60 CONVENTIONAL TYPE 20 0 100 10 S8592 40 REVERSE VOLTAGE (V) -2 -1 0 +1 KMPDB0201EA Dimensional outline (unit: mm) Details of elements (unit: mm) 22.86 0.3 PHOTOSENSITIVE SURFACE 18.8 7.62 0.3 0.25 6.5 7.87 0.3 9 (4.5) (22.0) QUARTZ GLASS 1.45 8 2.2 0.3 7 7.49 0.2 6 (0.5) 5 0.5 0.2 0.9 0.3 1.45 ACTIVE AREA CH 16 15.9 18 17 16 15 14 13 12 11 10 1 2 3 4 INDEX MARK +2 POSITION ON PHOTOSENSITIVE SURFACE (mm) KMPDB0200EA CH 1 S8592 0.46 2.54 0.1 P 2.54 x 8 = 20.32 KMPDA0135EA 0.9 0.1 KMPDA0145EA Pin connection Element No. Cathode 2 4 6 8 10 12 14 16 Cathode 15 13 11 9 7 5 3 1 Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2002 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KMPD1063E01 Jan. 2002 DN