TENTATIVE NJG1107HB3 January, 20, 2002 Ver.3 Under Development LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJG1107HB3 is a Low Noise Amplifier GaAs MMIC designed for GPS and 1.5GHz,1.9GHz band digital cellular phone, receiver and Japanese PHS handsets. This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. This amplifier includes internal self-bias circuit and input DC blocking capacitor. An ultra small and ultra thin package of USB8-B3 is adopted. FEATURES Low voltage operation Low current consumption High small signal gain Low noise figure High Input IP3 Ultra small & ultra thin package PACKAGE OUTLINE NJG1107HB3 +2.7V typ. 2.5mA typ. 17dB typ. @f=1.49GHz 1.1dB typ. @f=1.49GHz -4.0dBm typ. @f=1.4900+1.4901GHz USB8-B3 (Mount Size: 1.5x1.5x0.75mm) PIN CONFIGURATION HB3 Type (Top View) 4 5 3 6 2 A MP 1 7 Pin Connection 1.RFOUT 2.N/C 3.EXTCAP 4.N/C 5.N/C 6.GND 7. RFIN 8. N/C 8 Orientation Mark Note: Specifications and description listed in this catalog are subject to change without prior notice. -1- TENTATIVE NJG1107HB3 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage SYMBOL VDD Input Power Power Dissipation Pin PD Operating Temp. Storage Temp. Topr Tstg (Ta=+25C, Zs=Zl=50) RATINGS UNIT 6.0 V CONDITIONS VDD=2.7V +15 135 dBm mW -40~+85 -55~+150 C C ELECTRICAL CHARACTERISTICS 1 (1.5GHz Band) (VDD=2.7V, f=1.575GHz, Ta=+25C, Zs=Zl=50, TEST CIRCUIT) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT 1.57 1.575 1.58 Operating Frequency freq1 GHz Drain Voltage Operating Current Small Signal Gain Gain Flatness Noise Figure Pin at 1dB Gain Compression point Input 3rd Order Intercept Point RF Input Port VSWR RF Output Port VSWR -2- VDD IDD Gain Gflat NF RF OFF f=1.55~1.6GHz P-1dB IIP3 VSWRi VSWRo f=1.575+1.5751GHz RFin=-35dBm 2.5 15.0 - 2.7 2.5 17.0 0.5 1.2 5.5 3.2 TBD 1.4 V mA dB dB dB -20.0 -16.0 - dBm -6.0 -4.0 - dBm - 1.6 TBD 1.6 TBD TENTATIVE NJG1107HB3 PIN CONFIGURATION Pin 1 Function Rfout 2,4,5,8 N/C 3 EXTCAP 6 GND 7 Rfin Description RF output and voltage supply pin. External matching circuits and a bypass capacitor is required. L3 is a RF choke inductor and C1 is a DC blocking capacitor. These elements are used as output matching circuit. C2 is a bypass capacitor. Neutral terminal. Should be connected to the ground. An external bypass capacitor is required. Ground pin. To keep good RF grounding performance, please use multiple via holes to connect with ground plane and this pin. RF input pin. A DC blocking capacitor is not required. An external matching circuit is required. -3- TENTATIVE NJG1107HB3 TYPICAL CHARACTERISTICS k factor vs. frequency N F vs. freq uency (V 5 o DD (V = 2.7V , Ta= 25 C) 20 o DD =2.7V , Ta= 25 C) 4 15 k factor NF (dB) 3 2 10 NF 5 1 0 14 00 0 1450 15 00 1550 16 00 1650 17 00 0 5 10 frequency (M H z) P out vs. Pin (V 10 20 P ou t, IM 3 vs. Pin o DD 15 frequency (G H z) =2.7V , f=1575M H z, Ta= 25 C) (V 20 o DD = 2.7V , f1= 1575M H z, f2=f1+ 100kHz , Ta= 25 C) 5 0 P out Pout, IM3 (dBm ) Pout (dBm) 0 -5 P out -10 -15 -20 -40 -60 -20 IM 3 -80 -25 P-1dB (IN )=-14.8 dB m IIP 3=-2.8dBm -30 -1 00 -40 -35 -30 -25 -20 -15 -10 -5 0 -40 -35 -30 P in (dB m ) -15 -10 P -1dB (IN) vs. V DD o o -5 0 DD (f=1575M H z, Ta=25 C) (f= 1575M Hz, Ta= 25 C ) -6 6 -8 17 5 16 4 15 3 14 2 P-1dB(IN) (dBm ) G ain 7 NF (dB) 19 Gain (dB) -20 P in (d B m ) G ain , N F vs. V 18 -25 -10 -12 -14 -16 NF 13 12 2.5 3 3.5 4 V -4- DD 4.5 (V ) 5 5.5 1 -18 0 -20 2.5 3 3.5 4 V DD 4.5 (V ) 5 5.5 TENTATIVE NJG1107HB3 TYPICAL CHARACTERISTICS G ain , NF vs. T em perature (V (V 3.5 -12 17 3 -13 16 2.5 15 2 G ain 18 NF 14 1.5 13 1 12 0.5 0 50 -16 -17 -18 -19 -50 0 o I DD 100 vs. Tem perature (V = 2.7V, f1= 1575M H z, f2=f1+100kH z, P in= -35dB m ) 5 3 DD = 2.7V , R F=O FF) 2 O IP3 0 12 -1 IIP 3 11 -2 10 -3 9 -4 DD 13 I 1 (m A) 4 14 IIP3 (dBm ) O IP3 (dBm ) 15 DD 50 o Tem perature ( C ) O IP3, IIP 3 vs. T em perature (V = 2.7V , f=1575M Hz) -15 Tem perature ( C ) 16 DD -14 0 1 00 11 -50 P-1dB(IN) (dBm ) -11 NF (dB) 4 19 Gain (dB) DD P -1dB(IN) vs. Tem perature = 2.7V , f=1575M Hz) 3 2 1 8 -50 0 50 o Tem peratu re ( C ) -5 1 00 0 -50 0 50 100 o Tem perature ( C ) -5- NJG1107HB3 TENTATIVE TYPICAL CHARACTERISTICS S11,S22 VSWR S11, S22(~20GHz) -6- S21,S12 Zin, Zout S21, S12(~20GHz) TENTATIVE NJG1107HB3 TEST CIRCUIT (Top View) N/C 4 5 3 N/C RF Input 6 2 GND N/C L2 15nH L4 18nH 7 C1 6pF RF Output 1 RFIN L1 27nH C3 1000pF EXTCAP N/C 8 RFOUT L3 12nH C2 1000pF VDD=2.7V RECOMMENDED PCB DESIGN (Top View) Parts ID L1, L3, L4 L2 C1~C3 Comment TAIYO-YUDEN (HK1005) MATUSHITA (ELJRF) MURATA (GRP15) C3 RF Input L2 L1 C1 L4 L3 C2 VDD RF Output PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH =0.4mm (Z0=50) PCB SIZE=14.0mmX14.0mm -7- TENTATIVE NJG1107HB3 PACKAGE OUTLINE (USB8-B3) (TOP VIEW) (SIDE VIEW) 1pin INDEX 0.0380.01 0.140.05 0.80.05 0.75 1.50.05 0.50.1 0.50.1 :Au :FR5 :Epoxy resin :mm :12mg 0.20.1 8 4 0.20.1 6 5 0.20.05 0.20.05 0.40.1 (BOTTOM VIEW) Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. -8- R0.075 3 0.30.05 7 TERMINAL TREAT PCB Molding material UNIT WEIGHT 2 0.30.1 1.50.05 1 [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.