- 1 -
NJG1107HB3
TENTATIVE
LOW NOISE AMPLIFIER GaAs MMIC
■GENERAL DESCRIPTI ON ■PACKAGE OUTLINE
NJG1107HB3 is a Low Noise Amplifier GaAs MMIC
designed for GPS and 1.5GHz,1.9GHz band digital cellular
phone, receiver and Japanese PHS handsets. This amplifier
provides low noi se fig ure, high gain and high IP3 operated by
single low positiv e power supply.
This amplifier includes internal self-bias circuit and input
DC bloc king capacitor.
An ultra small and ultra thin package of USB8-B3 is
adopted.
■FEATURES
●Low voltage operation +2.7V typ.
●Low current consumption 2.5mA typ.
●High small signal gain 17dB typ. @f=1.49GHz
●Low noise f igur e 1.1dB typ. @f=1.49GHz
●High Input IP3 -4.0dBm typ. @f=1.4900+1.4901GHz
●Ultra small & ultra thin package USB8-B3 (Mount Size: 1.5x1.5x0.75mm)
■PIN CONFIGURATIO N
Note: Specificat ions and description listed in this catalog are subject to change without pr ior notice.
NJG1107HB3
HB3 Type
(Top View )
Pin Connection
1.RFOUT
2.N/C
3.EXTCAP
4.N/C
5.N/C
6.GND
7. RFIN
8. N/C
Orientati on Mark
January, 20, 2002 Ver.3
Under Development
A MP
1
2
3
7
6
5 4
8
NJG1107HB3
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TENTATIVE
■ABSOLU TE MAXIMUM RATINGS (Ta=+25°C, Zs=Zl=50Ω)
PARAMETER SYMBOL CONDITIONS RATINGS UNIT
Drain Voltage VDD 6.0 V
Input Power Pin VDD=2.7V +15 dBm
Power Dissipation PD 135 mW
Operating Temp. Topr -40~+85 °C
Storage Temp. Tstg -55~+150 °C
■ELECTRICAL CHARACTERISTICS 1 (1.5GHz Band)
(VDD=2.7V, f=1.575 GHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT
Operating Frequency freq1 1.57 1.575 1.58
GHz
Drain Voltage VDD 2.5 2.7 5.5 V
Operating Current IDD RF OFF - 2.5 3.2 mA
Small Signal Gain Gain 15.0 17.0 - dB
Gain Flatness Gflat f=1.55~1.6GHz - 0.5 TBD dB
Noise Figure NF - 1. 2 1.4 dB
Pin at 1dB Gain
Compression point P-1dB -20.0 -16.0 - dBm
Input 3rd Order
Intercept Point IIP3 f=1.575+1.5751GHz
RFin=-35dBm -6.0 -4.0 - dBm
RF Input Port
VSWR VSWRi - 1.6 TBD
RF Output Port
VSWR VSWRo 1.6 TBD
NJG1107HB3
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TENTATIVE
■PIN CONFIGURATIO N
Pin Function Description
1 Rfout RF output and voltage supply pin. External matching circuits and a bypass
capacitor is required. L3 is a RF cho ke inductor and C1 is a DC blocking ca pacitor .
These elements are used as output matching circuit. C2 is a bypass capacitor.
2,4,5,8 N/C Neutral terminal. Should be connected to the ground.
3 EXTCAP An external bypass capacitor is required.
6 GND Ground pin. To keep good RF grounding performance, please use multiple via
holes to connect with ground plane and this pin.
7 Rfin RF input pin. A DC blocking capacitor is not required. An external matching circuit
is required.
NJG1107HB3
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TENTATIVE
■TYPICAL CHARACTERISTICS
0
1
2
3
4
5
1400 1450 1500 1550 1600 1650 1700
N F vs. freq uenc y
NF (dB)
frequency (M Hz)
NF
(VDD=2.7V, Ta=25oC)
-30
-25
-20
-15
-10
-5
0
5
10
-40 -35 -30 -25 -20 -15 -10 -5 0
P o u t vs . P in
Pout (dBm )
Pin (dBm )
Pout
P-1dB(IN)=-14.8dBm
(VDD=2.7V, f=1575MHz , Ta=25oC)
-100
-80
-60
-40
-20
0
20
-40 -35 -30 -25 -20 -15 -10 -5 0
P o u t, IM3 v s. P in
P o ut, IM3 (d B m )
Pin (dBm )
Pout
IM3
IIP3=-2.8dBm
(VDD=2.7V, f1=1575MH z, f2=f1+100kHz, Ta=25oC)
0
5
10
15
20
0 5 10 15 20
k factor vs. frequency
k factor
frequency (G Hz)
(VDD= 2 .7V, T a = 2 5oC)
12
13
14
15
16
17
18
19
0
1
2
3
4
5
6
7
2.5 3 3.5 4 4.5 5 5.5
Ga in , NF v s . V DD
G a in ( d B )
NF (dB)
VDD (V )
(f=1575M Hz, Ta=25oC)
Gain
NF
-20
-18
-16
-14
-12
-10
-8
-6
2.533.544.555.5
P-1dB(IN) vs. VDD
P-1dB(IN) (dB m)
VDD (V )
(f=157 5M H z, Ta= 25oC)
- 5 -
NJG1107HB3
TENTATIVE
■TYPICAL CHARACTERISTICS
11
12
13
14
15
16
17
18
19
0
0.5
1
1.5
2
2.5
3
3.5
4
-50 0 50 100
G a in , N F v s. T emp era tu re
Gain (dB)
NF (dB)
Tem perature (oC)
(VDD=2.7V, f=1575M Hz)
Gain
NF
-19
-18
-17
-16
-15
-14
-13
-12
-11
-50 0 50 100
P-1dB(IN) vs. T emp erature
P-1dB(IN) (dBm )
Tem perature (oC)
(VDD=2.7V, f=1575M Hz)
8
9
10
11
12
13
14
15
16
-5
-4
-3
-2
-1
0
1
2
3
-50 0 50 100
O IP 3 , IIP 3 vs. T e mp e ra ture
OIP3 (dBm)
IIP3 (dB m)
Tem perature (oC)
(VDD=2.7V, f1=1575MH z, f2=f1+100kHz, Pin=-35dBm )
OIP3
IIP3
0
1
2
3
4
5
-50 0 50 100
IDD vs. Tem perature
IDD (mA)
Tem perature (oC)
(VDD= 2 .7V, R F = OF F )
NJG1107HB3
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TENTATIVE
■TYPICAL CHARACTERISTICS
S11
,
S22 S21
,
S12
VSWR Zin
,
Zout
S11
,
S22
(
~20GHz
)
S21
,
S12
(
~20GHz
)
NJG1107HB3
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TENTATIVE
■
■■
■TEST CIRCUIT
■
■■
■RECOMMENDED PCB DESIG N
Parts ID Comment
L1, L3, L4 TAIYO-YUDEN
(HK1005)
L2 MATUSHITA (ELJRF)
C1~C3 MURATA (GRP15)
(Top View)
8
6
5
2
17
3
4
L1
27nH
L2
15nH
L3
12nH
L4
18nH C1
6pF
C2
1000pF
C3
1000pF
RF In
p
ut RF Output
RFOUT
N/C
RFIN
GND
EXTCAP N/C
N/C
N/C
VDD=2.7V
L4 C1
C2
C3
L3
L1 L2
(Top View )
RF
Input RF
Output
VDD
PCB (F R-4):
t=0.2mm
MICROSTRIP LINE WI DTH
=0.4mm (Z0=50Ω)
PCB SIZE=14.0mmX14.0 m m
NJG1107HB3
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TENTATIVE
■PACKAGE OUTLINE (USB8-B3)
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this
p
roduct,
p
le ase obe
y
the relati n
g
law of
y
our countr
y
.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
with care to avoid these dama
g
es.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mi stakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
TERMINAL TREAT :Au
PCB :FR5
Molding mat erial :Epoxy resin
UNIT :mm
WEIGHT :12mg
0.038±0.01
1pin INDEX
0.4±0.1
(TOP VIEW) (SIDE VIEW)
1.5±0.05
0.2±0.050.2±0.05
0.3±0.1
0.2±0.1
0.2±0.1
0.5±0.1 0.5±0.1
1.5±0.05
R0.075
765
123
84
0.14±0.05
0.8±0.05
(BOTTOM VIEW)
0.3±0.05
0.75
