MOTOROLA = SEMICONDUCTOR (oI TECHNICAL DATA H11B1 6-Pin DIP Optoisolators H11B2 Darlington Output H11B3 These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applica- 6-PIN DIP tions requiring high sensitivity at low input currents. OPTOISOLATORS Convenient Plastic Dual-in-Line Package DARLINGTON OUTPUT High Sensitivity to Low Input Drive Current @ High Input-Output isolation Guaranteed - 7500 Volts Peak @ UL Recognized. File Number 54915 AS @ VDE approved per standard 0883/6.80 (Certificate number 41853), with additional approval to DIN IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, VDE0110b, covering all other standards with equal or jess stringent requirements, including IEC204/VDE0113, VDE0160, VDE0832, VDE0833, etc. 1 383 @ Special lead form available (add suffix T to part number) which satisfies VDE0883/ 6.80 requirement for 8 mm minimum creepage distance between input and output solder pads. Various lead form options available. Consult Optoisolator Lead Form Options data CASE 7304-02 heet for details, sneer tor details PLASTIC MAXIMUM RATINGS (Ty = 25C unless otherwise noted) SCHEMATIC [ Rating | Symbot | Value unit | INPUT LED Reverse Voltage VR 3 Volts Forward Current Continuous IF 60 mA 1 6 LED Power Dissipation @ Ta = 25C PD 150 mw with Negligible Power in Output Detector Ne Derate above 25C 1.41 mW 2 5 OUTPUT DETECTOR Collector-Emitter Voltage VcEO 25 Volts 30 4 Emitter-Base Voltage VEBO 7 Volts Collector-Base Voltage VcBo 30 Volts Collector Current Continuous ic 100 mA Detector Power Dissipation @ Ta = 25C Po 150 mw with Negligible Power in input LED Derate above 25C 1.76 mWPC TOTAL DEVICE isolation Surge Voltage (1) Viso 7500 Vac (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ Ta = 25C Pp 250 mw 1, LED ANODE Derate above 25C 2.94 mWwrc 2, LED CATHODE 3.N.C. Ambient Operating Temperature Range Ta ~55 to +100 c 4, EMITTER Storage Temperature Range Tstg ~55 to +150 or 5. meee 6. E Sotdering Temperature (10 sec, 1/16 from case) _ 260 07 {1} Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 6-37 H11B1, H11B2, H11B3 ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Characteristic | Symbol | Min | Typ Max | Unit INPUT LED Forward Voitage (lp = 10 mA) H11B1, H11B2 VE _ 1.16 15 Volts Forward Voltage (Ip = 50 mA) H11B3 VE _ 1.34 1.5 Volts Reverse Leakage Current (Vp = 3 V) IR - _ 10 uA Capacitance (V = 0 V, f = 1 MHz) Cy _ 18 _ pF OUTPUT DETECTOR Collector-Emitter Dark Current (VcE = 10 V) IcEO _ 5 100 nA Collector-Emitter Breakdown Voltage {Ic = 10 mA) V{BR)CEO 25 80 _ Volts Collector-Base Breakdown Voltage (Ic = 100 yA) V(BR)CBO 30 100 _ Volts Emitter-Collector Breakdown Voltage (I_ = 100 A) ViBRJECO 7 _ _ Volts OC Current Gain (Ic = 5 MA, Vce = 5 V) hre _ 16K _ _ Collector-Emitter Capacitance (f = 1 MHz, Vce = 5 V) Cce _ 3.9 _ pF Collector-Base Capacitance (f = 1 MHz, Vcg = 5 V) CcB _ 6.3 _ pF Emitter-Base Capacitance (f = 1 MHz, Veg = 5 V) Cep _ 3.8 _ pF COUPLED Output Collector Current H11Bi Ic 5 _ _ mA (ip = 1mMA, Vce = 5 V) H11B2 2 _ _ H11B3 1 _ _ Collector-Emitter Saturation Voltage (ic = 1 mA, IF = 1 mA) VCE(sat) _ 0.7 1 Volts Turn-Ori Time (Ip = 5 mA, Vcc = 10 V, RL = 100 9) ton _ 3.5 _ BS Turn-Off Time (Ip = 5mMA, Vcc = 10 V, RL = 100 9) toff _ 95 _ BS Rise Time (Ip = 5 mA, Vcc = 10 V, RL = 100 0) tr _ 1 _ BS Fall Time (ip = 5 MA, Vcc = 10 V, RL = 100 9) tf = 2 - BS isolation Voltage (f = 60 Hz, t = 1 sec) (2) Viso 7500 _ _ Vac(pk) Isolation Resistance (V = 500 V) (2) Riso =| 1077 _ _ a Isolation Capacitance (V = 0 V, f = 1 MHz) (2) Ciso | _- 0.2 _ pF Note 2. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. TYPICAL CHARACTERISTICS 10 PULSE ONLY emer PULSE OR DC NORMALIZED TO: Ip = 10 mA Ta = 26C 0.1ETA = 55C + Vg, FORWARD VOLTAGE (VOLTS) + l Ic, OUTPUT COLLECTOR CURRENT (NORMALIZED} + 0.01 1 10 100 4000 05 1 2 5 10 2 50 I, LED FORWARD CURRENT (mA) Ip, LED INPUT CURRENT (mA) Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Current versus Input Current 6-38 H11B1, H11B2, H11B3 Ss aw TOTa = 26C = os) ic, COLLECTOR CURRENT (mA) es nt o cS S Ic, OUTPUT COLLECTOR CURRENT (NORMALIZED} 0 1 2 3 4 5 6 7 8 $ 10 -60 ~40 ~20 0 20 4 660 80 100 Vog, COLLECTOR-EMITTER VOLTAGE {VOLTS) Ta, AMBIENT TEMPERATURE (C) Figure 3. Collector Current versus Figure 4. Output Current versus Ambient Temperature Collector-Emitter Voltage S mn NORMALIZED TO: Vee = 10V Ta = 25C NORMALIZED TO Ta = 25C 3 3 3 NR tO > lego, COLLECTOR-EMITTER DARK CURRENT {NORMALIZED} 3 Vc. COLLECTOR-EMITTER VOLTAGE (NORMALIZED) -60 -40 ~-20 0 2040 60 80 =: 100 0 20 40 60 80 100 Ta, AMBIENT TEMPERATURE {C} Ta, AMBIENT TEMPERATURE (C} Figure 5. Collector-Emitter Voltage versus Figure 6. Collector-Emitter Dark Current versus Ambient Temperature Ambient Temperature 1000 t, TIME (us) = 10V 1 01 02 05 1 2 5 10 2 50 100 01 0.2 051 2 5 10 2 50 100 ip, LED INPUT CURRENT (mA} Ig, LED INPUT CURRENT (mA) Figure 7. Turn-On Switching Times Figure 8. Turn-Off Switching Times 6-39 H11B1, H11B2, H11B3 Ic. TYPICAL COLLECTOR CURRENT (mA) 0 2 4 6 8 10 Vee, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 9. DC Current Gain (Detector Only) 12 3s BA pA C, CAPACITANCE {pF} Twa 14 16 18 = 20 0.05 0.1 0.2 0.5 1 2 5 10 20 50 Ve, VOLTAGE (VOLTS) Figure 10. Detector Capacitances versus Voltage TEST CIRCUIT WAVEFORMS UT PULSE Veg = 10V INP R, = 1009 ip = 5mA . > INPUT > K OUTPUT OUTPUT PULSE ot \ + Figure 11. Switching Times OUTLINE DIMENSIONS : NOTES: arn sme * ANODE 1. DIMENSIONING AND TOLERANCING PER ANSI CONFIGURATION 2, CATHODE Y14.5M, 1982. aNC 2. CONTROLLING DIMENSION: INCH. 4 EMITTER 3. DIM L TO CENTER OF LEAD WHEN FORMED 5. COLLECTOR PARALLEL. 6. BASE reo | | ole J se [[or3 i006 [rt] e@ | a@ | [#[013 12005) @ [7 CASE 730A-02 PLASTIC 6-40