yoo MMBT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LIT Ere)<t POWER SEMICONDUCTOR Features e Epitaxial Planar Die Construction e Complementary PNP Type Available (MMBT4403) SOT-28 e Ideal for Medium Power Amplification and | ea Dim | Min | Max Switching [el oT A 0.37 | 0.51 FF B 1.19 1.40 TOP VIEW Bc c 2.10 | 2.50 Mechanical Data + D | oso | 1.05 B E e Case: SOT-23, Molded Plastic 4 le D e]_s E 0.45 | 0.61 e Terminals: Solderable per MIL-STD-202, S| S 27 G 1.78 | 2.05 Method 208 }e H >| H 2.65 | 3.05 e Terminal Connections: See Diagram a a J 0.013 | 0.15 Marking: K2x, R2X te lat 4 low one Tato e Weight: 0.008 grams (approx.) aaah - L 045 | 061 M 0.076 | 0.178 All Dimensions in mm Maximum Ratings @ Ta = 25C unless otherwise specified Characteristic Symbol MMBT3904 Unit Collector-Base Voltage VcBo 60 Vv Collector-Emitter Voltage VcEO 40 Vv Emitter-Base Voltage VEBO 6.0 Vv Collector Current - Continuous (Note 1) Ic 600 mA Power Dissipation (Note 1) Pg 350 mW Thermal Resistance, Junction to Ambient (Note 1) Rosa 357 KAW Operating and Storage and Temperature Range Tj, Tsta -55 to +150 C Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width < 300us, duty cycle < 2%. DS30039 Rev. A-2 1 of 2 MMBT4401 Electrical Characteristics @ Ta = 25C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage ViBR)CBO 60 Vv Io = 100nA, le = 0 Collector-Emitter Breakdown Voltage ViBR)CEO 40 Vv Io = 1.0mA, Ip = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 Vv le = 100A, Ic = 0 Collector Cutoff Current IcEx 100 nA Voce = 35V, Vesiorr) = 0.4V Base Cutoff Current IB 100 nA Voce = 35V, Vesiorr) = 0.4V ON CHARACTERISTICS (Note 2) 20 Io = 100HA, VcE= 1.0V 40 Io = 1.0mA, VcE= 1.0V DC Current Gain hreE 80 Ilo= 10mA, VcE= 1.0V 100 300 ~~ Io = 150mA, VcE= 1.0V 40 Ic = 500mA, VcE= 2.0V . . 0.40 Io = 150mA, Ip = 15mA Collector-Emitter Saturation Voltage VcE(SAT) 0.75 Vv Ic = 500mA, Ip = 50mA Base- Emitter Saturation Voltage VBE(SAT) 0.78 Vv IC - SOOmA, ig - tem SMALL SIGNAL CHARACTERISTICS Output Capacitance Cob 6.5 pF Vop = 5.0V, f= 1.0MHz, le =0 Input Capacitance Ceb 30 pF Veg = 0.5V, f = 1.0MHz, Io = 0 Input Impedance hie 1.0 15 kQ Voltage Feedback Ratio hre 0.1 8.0 x104 | Voge = 10V, Io = 1.0mA, Small Signal Current Gain hfe 40 500 f= 1.0kHz Output Admittance Noe 1.0 30 us . . Voce = 10V, Ic = 20mA, Current Gain-Bandwidth Product fr 250 MHz f= 100MHz SWITCHING CHARACTERISTICS Delay Time tg 15 ns Voc = 30V, Ic = 150mA, Rise Time tr 20 ns Vee(of) = 2.0V, Ia1 = 15mA Storage Time ts 225 ns Voc = 30V, Ic = 150mA, Fall Time ti _ 30 ns Ip1 = Ip2 = 15mA Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width < 300us, duty cycle < 2%. DS30039 Rev. A-2 2 of 2 MMBT4401