ky SGS-THOMSON MICROELECTRONICS BYT 11-600 1000 FAST RECOVERY RECTIFIER DIODES = SOFT RECOVERY m= VERY HIGH VOLTAGE = SMALL RECOVERY CHARGE APPLICATIONS F126 = ANTISATURATION DIODES FOR TRANSIS- (Plastic) TOR BASE DRIVE = SNUBBER DIODES ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit lraM Repetive Peak Forward Current tp < 20us 20 A IF (AV) Average Forward Current * Ta = 75C 1 A b= 0.5 IFSM Surge non Repetitive Forward Current tp = 10ms 35 A Sinusoidal Prot Power Dissipation * Tg = 55C 1.25 WwW Tstg Storage and Junction Temperature Range - 55 to + 150 C Tj - 55 to + 150 TL Maximum Lead Temperature for Soldering during 10s at4mm 230 C from Case BYT 11- Symbol Parameter Unit 600 800 1000 VrrM Repetitive Peak Reverse Voltage 600 800 1000 Vv THERMAL RESISTANCE Symbol Parameter Value Unit Rih G-a) Junction-ambient* 60 C/W * On infinite heatsink with 10mm lead length. November 1994 1/4 BYT11-600 1000 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Synbol Test Conditions Min. Typ. Max. Unit IR Tj = 25C Vr = Varo 20 HA Ve Tj = 25C IF=1A 1.3 Vv RECOVERY CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit tr Tj = 25C IF = 0.5A IR=1A I= 0.25A 100 ns To evaluate the conduction losses use the following equations: Ve =1.1 +0.075 Ie P= 1.1 X IF(av) + 0.075 l-7(pMs) Figure 1. Maximum average power Figure 2. Average forward current versus dissipation versus average forward current. ambient temperature. P ow ig ta) 1,2 Infinite Printed circyit 1.0 0.8 0.8 0.4 0.2 0.0 0.2 0.4 0.8 0.8 4.0 0.0 50 400 150 Figure 3. Thermal resistance versus lead Mounting n1 Mounting n2 length. INFINITE HEATSINK PRINTED CIRCUIT (c/w) , L wy Test point of tlead Soldering 2/4 i $GS-THOMSON SF RCRCELECTRORNES BYT 11-600 1000 Figure 4. Transient thermal impedance junction-ambient for mounting n2 versus pulse duration (L = 10 mm). (c/o) 107 19 to-i 40-2 ag 4 40 107 103 Figure 6. Capacitance versus reverse applied voltage iv? cor th eo Cc f = 1 MH 10 Figure 5. Peak forward current versus peak forward voltage drop (maximum values). tal 50 a Ty = 150C Wp 1.1 ry = .075 a 10 Ty initial = 25C 4 150C ~-= Figure 7. Non repetitive surge peak current versus number of cycles ta) 40 % initisl 23 C ww 20 40 0 Number of cycles t 10 102 107 S-THOMSON 3/4 SECELECT ROMS. BYT11-600 1000 PACKAGE MECHANICAL DATA F 126 (Plastic) oc note 2 I ' ' ' ! l l l bs mm ' DIMENSIONS REF. Millimeters Inches NOTES Min. Max. Min. Max. A 6.05 6.35 0.238 | 0.250 B 26 1.024 @C 2.95 3.05 0.116 | 0.120 @D 0.76 0.86 0.029 | 0.034 E 1.27 0.050 1 - The lead diameter @ D is not controlled over zone E 2 - The minimum axial lengh within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) Cooling method: by convection (method A) Marking: type number ring at cathode end Weight: 0.4g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - United Kingdom - U.S.A. 4/4 G7 SGS-THOMSON SF RCRCELECTRORNES