WBE D WM b3b7254 0092963 T MEMOTL T-33-CF MOTOROLA SC (XSTRS/R F) MOTOROLA SEMICONDUCTOR Sonn TECHNICAL DATA 2C3767HV Chip NPN Silicon Medium-Power Transistor . . for use in driver circuits, switches, and amplifier applications. Saturation Voltage 1.0 Vdc @ 500 mAdc BC Current Gain 40-160 @ 500 mAdc DMO TT Discrete Military Operation MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VGEO 80 Vdc Collector-Base Voltage VCBO 100 Vde Emitter-Base Voltage VEBO 60 Vde Collector Current Io 4.0 Adc Base Current Ip 20 Ade Power Dissipation @ Ta = 25C Pr 25 Watts Derate above 25C 143 mwrec Storage and Junction Temperature Range Tstg: Ty 66 to +200 C Physical Characteristics: ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Die Size Characteristic l Symbol [ Min | Max Unit 60 x 60 mils OFF CHARACTERISTICS Die Thickness . 10-14 mils Collector-Emitter Sustaining Voltage Vv 80 =_ Vde ier t00mAdc) (BR)CEO Bond Pad Size: Emitter 20 x 40 mils Collector Cutoff Current IcEO - 500 pAdc Base 24 x 42 mils (VCE = 80 Vdc} Back Metal Collector Cutoff Current icBo 10 nade Titanium . 1000 A (Nom) (Vc = 100 Vde) Nickel ... 3000 A (Nom) Collector Cutoff Current IcEx T Siver 1 20,000 A (Nom) (VE = 100 Vdc, Vge = 15 Vde) 10 Ade op KA a (VCE = 70 Vde, Vg = 15 Vde, Ta = 150C) - 10 mAdc 60 kA Alum (Nom) Back Side = Collector Emitter Cutoft Current lEBO _ 500 pAde (Veg = 6 0 Vde) * Pulsed Pulse Width 250 to 350 ys Duty Cycia 10 to 20% {cantinued) DISCRETE MILITARY OPERATION DATA 3-267 ULE D Ml b3b?254 po92964 1 MBMNOTb MOTOROLA SC (XSTRS/R F) T-33-09 2C3767HV ELECTRICAL CHARACTERISTICS continued (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain* hee _ (Ig = 50 mAdc, VcE = 5.0 Vde) 30 - (ig = 500 mAde, Voce = 5.0 Vde) 40 160 (ig = 1.0 Adc, Voce = 1.0 Vde) 20 _ (Ig = 500 mAdc, VcE = 5.0 Vde, Ta = -55C} 13 _ Collector-Emitter Saturation Voltage* VcE(sat) Vde (Ig = 500 mAdc, Ig = 50 mAdc) _ 1.0 (Ig = 1 0 Adc, Ig = 0.1 Ade) = 25 Base-Emitter On Voltage* VBE(sat) _ 16 Vde {Io = 1 0 Adc, Vcg = 10 Ve} SMALL-SIGNAL CHARACTERISTICS Small-Signal Current Transfer Ratio, Magnitude IMel 10 8.0 = (Ic = 500 mAde, Vg = 10 Ve, f = 10 MHz) Output Capacitance Cobo - 50 pF (VoE = 10 Vde, f = 100 kHz - 1.0 MHz) SWITCHING CHARACTERISTICS (ic = 0.5 A, Ig = 0.05 A) Turn-On Time ton _ 0.25 ps Turn-Off Time lott ~~ 25 us ASSURANCE TESTING (Pre/Post Burn-in) Initial and End Point Limits Characteristics Tested Symbol Min Max Unit Collector Cutoff Current IcEX _ 10 pAde (VcE = 100 Vdc, VBE = 1 5 Vde) DC Current Gain hre 40 160 - {Ic = 500 mAdc, Vcg = 5.0 Vde) Delta from Pre-Burn-in Measured Values Min Max Delta Collector Cutoff Currant AICEX _ 100 % of initial Value or +1.0 pAdc whichever is greater Delta DC Current Gain* AnFE _ +25 % of Initial Value * Pulsed Pulse Width 250 to 350 us Duty Cycle 10 to 20% DISCRETE MILITARY OPERATION DATA 3-268