PolarPTM Power MOSFETs IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) VDSS ID25 RDS(on) G D (Tab) G D DS D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 200 V VDGR TJ = 25C to 150C, RGS = 1M - 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C - 26 A IDM TC = 25C, Pulse Width Limited by TJM - 70 A IA TC = 25C - 26 A EAS TC = 25C 1.5 J dv/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns PD TC = 25C 300 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 C C 1.13/10 Nm/lb.in. 2.5 3.0 5.5 6.0 g g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-3P,TO-220 &TO-247) Weight TO-263 TO-220 TO-3P TO-247 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250A - 200 VGS(th) VDS = VGS, ID = - 250A - 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = -10V, ID = 0.5 * ID25, Note 1 (c) 2013 IXYS CORPORATION, All Rights Reserved D (Tab) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z z z z International Standard Packages Avalanche Rated Rugged PolarPTM Process Low Package Inductance Fast Intrinsic Diode Advantages z z z Easy to Mount Space Savings High Power Density Applications z V - 4.0 S TO-247 (IXTH) Characteristic Values Min. Typ. Max. V 100 nA TJ = 125C - 200V - 26A 170m TO-3P (IXTQ) TO-220AB (IXTP) G S = = z z z z High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators - 10 A -150 A 170 m DS99913D(01/13) IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 10 VDS = -10V, ID = 0.5 * ID25, Note 1 Ciss Coss 17 S 2740 pF VGS = 0V, VDS = -25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 3.3 (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 540 pF 100 pF 18 ns 33 ns 46 ns 21 ns 56 nC 18 nC 20 nC 0.42 C/W RthJC RthCS (TO-3P & TO-247) 0.21 C/W (TO-220) 0.50 C/W Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = - 200V, ID = - 0.8A, TC = 70C, Tp = 5s 160 W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. - 26 A Repetitive, Pulse Width Limited by TJM - 104 A VSD IF = -13A, VGS = 0V, Note 1 - 3.2 V trr QRM IRM IF = -13A, -di/dt = -100A/s VR = -100V, VGS = 0V 240 2.2 -18.0 ns C A Note 1. Pulse Test, t 300s; Duty Cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P TO-220 Outline TO-263 Outline 1. 2. 3. 4. Gate Collector Emitter Collector Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 TO-3P Outline TO-247 Outline P 1 2 3 e Terminals: 1 - Gate Dim. Pins: Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 (c) 2013 IXYS CORPORATION, All Rights Reserved 1 - Gate 2 - Drain IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P Fig. 2. Extended Output Characteristics @ T J = 25C Fig. 1. Output Characteristics @ T J= 25C -90 -28 VGS = -10V - 8V -24 VGS = -10V - 9V -80 -70 -7V -20 ID - Amperes ID - Amperes -60 -16 - 6V -12 - 8V -50 - 7V -40 -30 - 6V -8 -20 - 5V -4 - 5V -10 0 0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 0 -10 -15 -20 -25 -30 VDS - Volts Fig. 3. Output Characteristics @ T J = 125C Fig. 4. RDS(on) Normalized to ID = -13A Value vs. Junction Temperature 2.4 -28 VGS = -10V - 8V -24 2.2 R DS(on) - Normalized -20 - 6V -16 VGS = -10V 2.0 - 7V ID - Amperes -5 VDS - Volts -12 -8 1.8 I D = - 26A 1.6 I D = -13A 1.4 1.2 1.0 0.8 - 5V -4 0.6 0.4 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -50 -9 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = -13A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature -28 3.0 VGS = -10V 2.8 -24 TJ = 125C 2.4 -20 ID - Amperes R DS(on) - Normalized 2.6 2.2 2.0 1.8 -16 -12 1.6 -8 1.4 TJ = 25C 1.2 -4 1.0 0.8 0 0 -10 -20 -30 -40 -50 -60 -70 -80 ID - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P Fig. 7. Input Admittance Fig. 8. Transconductance 32 -45 -40 -35 TJ = - 40C 28 TJ = - 40C 25C 125C 24 25C g f s - Siemens ID - Amperes -30 -25 -20 -15 20 12 -10 8 -5 4 0 -3.0 125C 16 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 0 -5 -10 -15 -20 VGS - Volts -25 -30 -35 -40 -45 -50 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -80 -10 VDS = -100V -9 -70 I D = -13A -8 I G = -1mA -60 -50 VGS - Volts IS - Amperes -7 -40 TJ = 125C -30 -5 -4 -3 TJ = 25C -20 -6 -2 -10 -1 0 -0.5 0 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 0 -4.0 5 10 VSD - Volts 20 25 30 35 40 45 50 55 60 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 Ciss 1,000 Z(th)JC - C / W Capacitance - PicoFarads 15 Coss 0.10 100 Crss f = 1 MHz 10 0 -5 -10 -15 -20 -25 VDS - Volts (c) 2013 IXYS CORPORATION, All Rights Reserved -30 -35 -40 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25C @ T C = 70C - 100.0 - 100.0 25s RDS(on) Limit RDS(on) Limit 100s 25s 100s -10.0 - 10.0 ID - Amperes ID - Amperes 1ms 10ms 100ms DC - 1.0 1ms 10ms 100ms - 1.0 DC TJ = 150C TJ = 150C TC = 25C TC = 70C Single Pulse Single Pulse - 0.1 - 0.1 -1 - 100 - 10 - 1000 VDS - Volts -1 - 10 - 100 -1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_26P20P(B5)7-28-09-C