R07DS0050EJ0200 Rev.2.00 Page 1 of 5
Jul 22, 2010
Preliminary Datasheet
RJK5030DPD
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-state resistance
RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, Ta = 25C)
High speed switching
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
1
1. Gate
2. Drain
3. Source
4. Drain
3
2
4
D
G
S
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol Value Unit
Drain to source voltage VDSS 500 V
Gate to source voltage VGSS 30 V
Drain current ID 5 A
Drain peak current ID (pulse) Note1 20 A
Avalanche current IAPNote3 5 A
Channel dissipation Pch Note 2 41.7 W
Channel to case thermal Impedance ch-c 3.0 C/W
Channel temperature Tch 150 C
Storage temperature Tstg –55 to +150 C
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
R07DS0050EJ0200
(Previous: REJ03G1913-0100)
Rev.2.00
Jul 22, 2010
RJK5030DPD Preliminary
R07DS0050EJ0200 Rev.2.00 Page 2 of 5
Jul 22, 2010
Electrical Characteristics
(Ta = 25C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS 500 — — V ID = 1 mA, VGS = 0
Zero gate voltage drain current IDSS — — 10 A VDS = 500 V, VGS = 0
Gate to source leak current IGSS — — 0.1 A VGS = 30 V, VDS = 0
Gate to source cutoff voltage VGS (off) 3.5 — 4.5 V VDS = 10 V, ID = 1 mA
Static drain to source on state resistance RDS (on) — 1.3 1.6 I
D = 2 A, VGS = 10 V Note 4
Input capacitance Ciss — 550 — pF
Output capacitance Coss — 60 — pF
Reverse transfer capacitance Crss — 10 — pF
VDS = 25 V
VGS = 0
f = 1 MHz
Turn-on delay time td (on) — 15 — ns
Rise time tr — 20 — ns
Turn-off delay time td (off) — 90 — ns
Fall time tf — 30 — ns
VDD = 200 V
ID = 2 A
VGS = 10 V
Rg = 25
Body-drain diode forward voltage VDF — 0.9 1.5 V IF = 5 A, VGS = 0 Note 4
Body-drain diode reverse recovery time trr — 250 — ns IF = 5 A, VGS = 0
VDD = 250 V
diF/dt = 100 A/s
Note: 4. Pulse test
RJK5030DPD Preliminary
R07DS0050EJ0200 Rev.2.00 Page 3 of 5
Jul 22, 2010
Main Characteristics
10
8
6
4
2
004812 1620
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Typical Output Characteristics
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Typical Transfer Characteristics
1 10 100
1
10
0.1
Drain Current ID (A)
Drain to Source on State Resistance
RDS(on) (Ω)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
V
GS
= 10 V
Ta = 25°C
Pulse Test
−250255075 100 125150
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
RDS(on) (Ω)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
02468 1210
8
6
2
4
0
10
4
3
1
2
0
5
V
DS
= 10 V
Pulse TestTc = −25°C
25°C
75°C
Ta = 25°C
Pulse Test7 V
8 V
10 V
20 V
5.4 V
6.1 V
6.4 V
6.7 V
5.8 V
V
GS
= 5 V
I
D
= 5 A
1 10 100
1000
100
10
Reverse Drain Current IDR (A)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time (Typical)
V
GS
= 10 V
Ta = 25°C
Pulse Test
10
1
110 1000
0.01
0.1
100
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Maximum Safe Operation Area
100
0.001
0.1
Tc = 25°C
1 shot
PW = 100 μs
10 μs
Operation in this
area is limited by
R
DS(on)
2 A
1 A
di / dt = 100 A / μs
V
GS
= 0, Ta = 25°C
RJK5030DPD Preliminary
R07DS0050EJ0200 Rev.2.00 Page 4 of 5
Jul 22, 2010
050200150100 250
1000
100
800
0
16
600 12
400 8
200 4
4812 1620
0
10
1
V
GS
= 0
f = 1 MHz Tc = 25°C
Ciss
Coss
Crss
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nC)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics (Typical)
00.4 0.8 1.21.6 2.0
20
8
Source to Drain Voltage V
SD
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Reverse Drain Current I
DR
(A)
5
4
3
2
1
-25050 100 1502512575
0
Case Temperature Tc (°C)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
Gate to Source Cutoff Voltage
V
GS(off)
(V)
V
DS
= 10 V
1 mA
0.1 mA
4
12
16
I
D
= 5 A
Ta = 25°C
V
DS
V
GS
V
DD
= 100 V
200 V
400 V
V
DD
= 400 V
200 V
100 V
V
GS
= 0
Ta = 25°C
Pulse Test
I
D
= 10 mA
0.01
1
100
0.1
10
10 m100 m1 10
Pulse Width PW (s)
Thermal Impedance θch – c (°C/W)
Thermal Impedance vs. Pulse Width
Tc = 25°C
Single pulse
100 μ10 μ1 m
RJK5030DPD Preliminary
R07DS0050EJ0200 Rev.2.00 Page 5 of 5
Jul 22, 2010
Package Dimensions
SC-630.32g
MASS[Typ.]
TMP3PRSS0004ZG-A
RENESAS CodeJEITA Package Code Previous Code
Unit: mm
10.4Max
1Max
0.5 ± 0.2
0.1 ± 0.1
0.5 ± 0.2
0.760.76 ± 0.2
2.3 ± 0.2
5.3 ± 0.2
6.6
1.4 ± 0.2
6.1 ± 0.21 ± 0.2
2.3
2.5Min
2.3
1
Package Name
MP-3A
Ordering Information
Part No. Quantity Shipping Container
RJK5030DPD-00 3000 pcs Taping
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