JDH3D01FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01FV For wave detection Unit: mm 0.220.05 1.20.05 0.4 0.80.05 1 0.4 0.80.05 1.20.05 Lead (Pb) free 0.320.05 Small package 2 3 Symbol Rating Unit Reverse voltage VR 4 V Forward current IF 25 mA Junction temperature Tj 125 C Tstg -55~125 C Storage temperature range 0.50.05 Characteristic 0.130.05 Maximum Ratings (Ta = 25C) VESM 1. ANODE 2. CATHODE 3. CATHODE/ANODE JEDEC JEITA TOSHIBA Weight:0.0015gtyp.) Electrical Characteristics (Ta = 25C) Characteristic 1-2S1C Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 2 mA 0.25 V Forward current IF VF = 0.5 V 25 mA Reverse current IR VR = 0.5 V 25 uA Capacitance CT VR = 0.2 V, f = 1 MHz 0.6 pF Marking B Caution This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with the product should be made of antistatic materials. 1 2004-11-11 JDH3D01FV -VF 1.E+00 1.E-01 IF(A) 1.E-02 1.E-03 1.E-04 1.E-05 1.E-06 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VF(V) -VR 1.E+00 1.E-01 IR(A) 1.E-02 1.E-03 1.E-04 1.E-05 1.E-06 1.E-07 0 1 2 3 4 5 6 VR(V) 2 2004-11-11 JDH3D01FV - 1 CT(pF) f=1MHz Ta=25 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 VR(V) 3 2004-11-11 JDH3D01FV 4 2004-11-11