JDH3D01FV
2004-11-11
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH3D01FV
○ For wave detection
Small package
Lead (Pb) free
Maximum Ratings (Ta = 25°C)
Electrical Characteristics (Ta = 25°C)
Marking
Caution
This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and
other objects that come into direct contact with the product should be made of antistatic materials.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 1-2S1C
Characteristic Symbol Rating Unit
Reverse voltage VR 4 V
Forward current IF 25 mA
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Characteristic Symbol Test Condition
Min Typ. Max Unit
Forward voltage VF IF = 2 mA ⎯ 0.25 ⎯ V
Forward current IF VF = 0.5 V 25 ⎯ ⎯ mA
Reverse current IR VR = 0.5 V ⎯ ⎯ 25 uA
Capacitance CT VR = 0.2 V, f = 1 MHz ⎯ 0.6 ⎯ pF
B Ｈ
VESM
1.2±0.05
0.32±0.05
1
2 3
0.4 0.4 0.22±0.05
0.8±0.05
0.8±0.05
1.2±0.05
0.5±0.05
0.13±0.05
1. ANODE１
2. CATHODE２
3. CATHODE１/ANODE２
Weight:0.0015g（typ.)
JDH3D01FV
2004-11-11
2
ＩＦ-VF
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VF(V)
IF(A)
Ｔａ＝２５℃
ＩＲ-VR
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
0123456
VR(V)
IR(A)
Ｔａ＝２５℃
JDH3D01FV
2004-11-11
3
ＣＴ-ＶＲ
0.1
1
00.511.522.533.54
VR(V)
CT(pF)
f=1MHz
Ta=25℃
JDH3D01FV
2004-11-11
4
