V23990-P680-F-PM preliminary datasheet flowPACK 2 3rd gen 1200V/150A Features flow2 housing High power flow2 housing Trench Fieldstop Technology IGBT4 Compact and low inductive design Target Applications Schematic Motor Drive Power Generation UPS ASK MARKETING Types V23990-P680-F Maximum Ratings Tj=25C, unless otherwise specified Parameter Condition Symbol Value Unit 1200 V Inverter Transistor Collector-emitter break down voltage DC collector current Repetitive peak collector current VCE IC ICpulse Power dissipation per IGBT Ptot Gate-emitter peak voltage VGE Short circuit ratings tSC VCC Maximum Junction Temperature Tj=Tjmax Th=80C Tc=80C tp limited by Tjmax Tj=Tjmax Th=80C Tc=80C Tj150C VGE=15V Tjmax 134 150 450 A A 313 475 W 20 V 10 800 s V 175 C 1200 V Inverter Diode Peak Repetitive Reverse Voltage DC forward current VRRM Tj=25C IF Tj=Tjmax Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Th=80C Tc=80C Th=80C Tc=80C 110 145 300 A A 189 287 W Tjmax 175 C Storage temperature Tstg -40...+125 C Operation temperature under switching condition Top -40...+(Tjmax - 25) C Maximum Junction Temperature Thermal Properties Copyright by Vincotech 1 Revision: 1 V23990-P680-F-PM preliminary datasheet Maximum Ratings Tj=25C, unless otherwise specified Parameter Condition Symbol Value Unit 4000 V Creepage distance min 12,7 mm Clearance min 12,7 mm Insulation Properties Insulation voltage Copyright by Vincotech Vis t=2s DC voltage 2 Revision: 1 V23990-P680-F-PM preliminary datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Tj Unit Min Typ Max 5 5.8 6.5 1.5 1.85 2.5 Inverter Transistor Gate emitter threshold voltage VGE(th) Collector-emitter saturation voltage VCE(sat) 15 Collector-emitter cut-off current incl. Diode ICES 0 1200 Gate-emitter leakage current IGES 20 0 Integrated Gate resistor Rgint Turn-on delay time td(on) Rise time Turn-off delay time Fall time VCE=VGE 0.006 150 tf 0.04 700 Rgoff=4 Rgon=4 Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Input capacitance Cies Output capacitance Coss Reverse transfer capacitance Crss Gate charge QGate Vcc=960V Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC Thermal grease thickness50um = 1 W/mK 15 600 150 Tj=25C Tj=150C Tj=25C Tj=150C Tj=25C Tj=150C Tj=25C Tj=150C Tj=25C Tj=150C Tj=25C Tj=150C V V mA nA 5 tr td(off) Tj=25C Tj=150C Tj=25C Tj=150C Tj=25C Tj=150C Tj=25C Tj=150C 213 229 35 44 326 410 68 104 12.68 18.80 8.07 12.85 ns mWs 8800 f=1MHz 25 0 580 Tj=25C pF 470 15 150 750 Tj=25C nC 0.30 K/W 0.20 Inverter Diode Diode forward voltage Peak reverse recovery current VF IRRM Reverse recovery time trr Reverse recovered charge Qrr Peak rate of fall of recovery current Reverse recovered energy Rgon=4 600 15 di(rec)max /dt Erec Thermal resistance chip to heatsink per chip RthJH Thermal resistance chip to case per chip RthJC Copyright by Vincotech 150 Thermal grease thickness50um = 1 W/mK 150 Tj=25C Tj=150C Tj=25C Tj=150C Tj=25C Tj=150C Tj=25C Tj=150C Tj=25C Tj=150C Tj=25C Tj=150C 1.3 1.94 1.98 143 168 287 465 15.56 29.16 3267 1615 5.71 10.81 2.5 V A ns C A/s mWs 0.50 K/W 0.33 3 Revision: 1 V23990-P680-F-PM preliminary datasheet Output Inverter Output inverter IGBT Figure 1 Typical output characteristics IC = f(VCE) Output inverter IGBT Figure 2 Typical output characteristics IC = f(VCE) 450 IC (A) IC (A) 450 375 375 300 300 225 225 150 150 75 75 0 0 0 1 At tp = Tj = VGE from 2 3 V CE (V) 4 5 0 At tp = Tj = VGE from 250 s 25 C 7 V to 17 V in steps of 1 V Output inverter IGBT Figure 3 Typical transfer characteristics IC = f(VGE) 1 2 3 V CE (V) 5 250 s 150 C 7 V to 17 V in steps of 1 V Output inverter FRED Figure 4 Typical diode forward current as a function of forward voltage IF = f(VF) 150 4 IC (A) IF (A) 450 375 120 300 Tj = 25C 90 225 Tj = Tjmax-25C 60 150 Tj = Tjmax-25C 30 Tj = 25C 75 0 0 0 At tp = VCE = 2 250 0 4 6 8 10 V GE (V) 12 0 At tp = s V Copyright by Vincotech 4 0.5 250 1 1.5 2 2.5 3 3.5 V F (V) 4 s Revision: 1 V23990-P680-F-PM preliminary datasheet Output Inverter Output inverter IGBT Figure 5 Typical switching energy losses as a function of collector current E = f(IC) Output inverter IGBT Figure 6 Typical switching energy losses as a function of gate resistor E = f(RG) 40 E (mWs) E (mWs) 40 Eon 32 Eon 32 Tj = Tjmax - 25C Eon Tj = Tjmax - 25C 24 Eon 24 Eoff Tj = 25C 16 16 Eoff Eoff Eoff 8 8 Tj = 25C 0 0 0 50 100 150 200 250 I C (A) 0 300 With an inductive load at Tj = C 25/150 VCE = 600 V VGE = 15 V Rgon = 4 Rgoff = 4 4 8 12 RG() 16 20 With an inductive load at Tj = C 25/150 VCE = 600 V VGE = 15 V IC = 150 A Output inverter IGBT Figure 7 Typical reverse recovery energy loss as a function of collector current Erec = f(Ic) Output inverter IGBT Figure 8 Typical reverse recovery energy loss as a function of gate resistor Erec = f(RG) E (mWs) 15 E (mWs) 15 Erec 12 12 Tj = Tjmax -25C Tj = Tjmax -25C 9 Erec 9 Erec Tj = 25C 6 6 Tj = 25C Erec 3 3 0 0 0 50 100 150 200 250 I C (A) 300 0 With an inductive load at Tj = 25/150 C VCE = 600 V VGE = 15 V Rgon = 4 Copyright by Vincotech 4 8 12 16 RG() 20 With an inductive load at Tj = 25/150 C VCE = 600 V VGE = 15 V IC = 150 A 5 Revision: 1 V23990-P680-F-PM preliminary datasheet Output Inverter Output inverter IGBT Figure 9 Typical switching times as a function of collector current t = f(IC) Output inverter IGBT Figure 10 Typical switching times as a function of gate resistor t = f(RG) 1 tdoff t ( s) t ( s) 1 tdoff tdon tdon tf 0.1 0.1 tf tr tr 0.01 0.01 0.001 0.001 0 50 100 150 200 250 I C (A) 300 0 With an inductive load at Tj = 150 C VCE = 600 V VGE = 15 V Rgon = 4 Rgoff = 4 4 8 12 RG( ) 16 20 With an inductive load at Tj = 150 C VCE = 600 V VGE = 15 V IC = 150 A Output inverter FRED Figure 11 Typical reverse recovery time as a function of collector current trr = f(Ic) Output inverter FRED Figure 12 Typical reverse recovery time as a function of IGBT turn on gate resistor trr = f(Rgon) t rr( s) 0.8 t rr( s) 0.8 0.7 trr 0.7 trr Tj = Tjmax -25C 0.6 0.6 Tj = Tjmax -25C 0.5 0.5 0.4 0.4 trr Tj = 25C Tj = 25C trr 0.3 0.3 0.2 0.2 0.1 0.1 0 0 0 At Tj = VCE = VGE = Rgon = 50 25/150 600 15 4 100 150 200 250 I C (A) 300 C V V Copyright by Vincotech 6 0 4 At Tj = VR = IF = VGE = 25/150 600 150 15 8 12 16 R g on ( ) 20 C V A V Revision: 1 V23990-P680-F-PM preliminary datasheet Output Inverter Output inverter FRED Figure 13 Typical reverse recovery charge as a function of collector current Qrr = f(IC) Output inverter FRED Figure 14 Typical reverse recovery charge as a function of IGBT turn on gate resistor Qrr = f(Rgon) 40 Qrr ( C) Qrr ( C) 40 Qrr Tj = Tjmax -25C 32 32 Tj = Tjmax -25C Qrr 24 24 Qrr Tj = 25C Tj = 25C 16 16 Qrr 8 8 0 0 At 0 At Tj = VCE = VGE = Rgon = 50 25/150 600 15 4 100 150 200 250 I C (A) 300 C V V Output inverter FRED Figure 15 Typical reverse recovery current as a function of collector current IRRM = f(IC) 0 4 At Tj = VR = IF = VGE = 25/150 600 150 15 8 12 R g on ( ) 16 20 C V A V Output inverter FRED Figure 16 Typical reverse recovery current as a function of IGBT turn on gate resistor IRRM = f(Rgon) 240 IrrM (A) IrrM (A) 240 200 200 Tj = Tjmax -25C IRRM 160 160 IRRM IRRM Tj = 25C 120 120 Tj = Tjmax - 25C IRRM 80 80 Tj = 25C 40 40 0 0 0 At Tj = VCE = VGE = Rgon = 50 25/150 600 15 4 100 150 200 250 I C (A) 0 300 At Tj = VR = IF = VGE = C V V Copyright by Vincotech 7 4 25/150 600 150 15 8 12 16 R gon ( ) 20 C V A V Revision: 1 V23990-P680-F-PM preliminary datasheet Output Inverter Output inverter FRED Figure 17 Typical rate of fall of forward and reverse recovery current as a function of collector current dI0/dt,dIrec/dt = f(Ic) 6000 7000 dI0/dt direc / dt (A/ s) direc / dt (A/ s) Output inverter FRED Figure 18 Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor dI0/dt,dIrec/dt = f(Rgon) Tj = 25C dIrec/dt 5000 dI0/dt dIrec/dt 6000 5000 4000 Tj = 25C 4000 3000 3000 Tj = Tjmax - 25C 2000 2000 1000 1000 Tj = Tjmax - 25C 0 0 0 At Tj = VCE = VGE = Rgon = 50 25/150 600 15 4 100 150 200 250 I C (A) 300 0 At Tj = VR = IF = VGE = C V V Output inverter IGBT Figure 19 IGBT transient thermal impedance as a function of pulse width ZthJH = f(tp) 4 25/150 600 150 15 8 12 C V A V Output inverter FRED Figure 20 FRED transient thermal impedance as a function of pulse width ZthJH = f(tp) 100 ZthJH (K/W) ZthJH (K/W) 100 R gon ( ) 20 16 10-1 10-1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 -2 10 10-2 -5 -4 10 10 At D= RthJH = -3 10 -2 10 10 -1 0 10 t p (s) 10-5 1 10 1 At D= RthJH = tp / T 0.30 K/W 10-4 10-3 0.50 R (C/W) 0.03 0.06 0.10 0.09 0.01 0.01 R (C/W) 0.03 0.10 0.12 0.19 0.03 0.03 8 100 t p (s) 1011 K/W FRED thermal model values Copyright by Vincotech 10-1 tp / T IGBT thermal model values Tau (s) 4.8E+00 1.1E+00 1.8E-01 3.7E-02 3.8E-03 3.9E-04 10-2 Tau (s) 1.0E+01 1.4E+00 1.8E-01 3.3E-02 4.7E-03 4.2E-04 Revision: 1 V23990-P680-F-PM preliminary datasheet Output Inverter Output inverter IGBT Figure 21 Power dissipation as a function of heatsink temperature Ptot = f(Th) Output inverter IGBT Figure 22 Collector current as a function of heatsink temperature IC = f(Th) 200 IC (A) Ptot (W) 600 500 150 400 100 300 200 50 100 0 0 0 At Tj = 50 175 100 C 150 T h ( o C) 0 200 At Tj = VGE = single heating overall heating Output inverter FRED Figure 23 Power dissipation as a function of heatsink temperature Ptot = f(Th) 50 175 15 100 T h ( o C) 200 C V Output inverter FRED Figure 24 Forward current as a function of heatsink temperature IF = f(Th) 200 IF (A) Ptot (W) 400 150 320 150 240 100 160 50 80 0 0 0 At Tj = 50 175 100 C Copyright by Vincotech 150 T h ( o C) 200 0 At Tj = single heating overall heating 9 50 175 100 150 T h ( o C) 200 C Revision: 1 V23990-P680-F-PM preliminary datasheet Output Inverter Output inverter IGBT Figure 25 Safe operating area as a function of collector-emitter voltage IC = f(VCE) Output inverter IGBT Figure 26 Gate voltage vs Gate charge VGE = f(Qg) 103 VGE (V) 20 IC (A) 10u 100u 102 10m 15 1m 100m DC 240V 960V 10 101 5 100 0 10-1 0 10 At D= Th = VGE = Tj = 101 102 V CE (V) 0 103 At IC = single pulse 80 C 15 V Tjmax C Copyright by Vincotech 10 200 150 400 600 800 Q g (nC) A Revision: 1 V23990-P680-F-PM preliminary datasheet Switching Definitions Output Inverter General conditions = 150 C Tj = 4 Rgon Rgoff = 4 Output inverter IGBT Figure 1 Output inverter IGBT Figure 2 Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff) Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon) 240 140 Ic 120 tdoff Uce 200 100 Uce 90% Uge 90% 160 80 Ic 60 Uce % 120 % Uge tEoff 40 80 tdon 20 Ic 1% 40 Ic10% 0 Uge -20 Uce3% Uge10% 0 tEon -40 -0.2 0 VGE (0%) = VGE (100%) = VC (100%) = IC (100%) = tdoff = tEoff = 0.2 0.4 time (us) -15 15 600 149 0.41 0.70 0.6 0.8 -40 1 2.6 2.8 VGE (0%) = VGE (100%) = VC (100%) = IC (100%) = tdon = tEon = V V V A s s Output inverter IGBT Figure 3 3 3.2 -15 15 600 149 0.23 0.61 3.4 time(us) 3.8 4 V V V A s s Output inverter IGBT Figure 4 Turn-off Switching Waveforms & definition of tf 3.6 Turn-on Switching Waveforms & definition of tr 140 240 Ic 120 200 Uce Ic 100 160 Ic 90% 80 fitted % 60 Ic 60% Uce 120 % 80 Ic 40% 40 tr Ic90% 40 20 Ic10% tf 0 Ic10% 0 -20 -40 0.3 VC (100%) = IC (100%) = tf = 0.35 0.4 600 149 0.10 Copyright by Vincotech 0.45 0.5 time (us) 0.55 0.6 0.65 3 VC (100%) = IC (100%) = tr = V A s 11 3.1 3.2 600 149 0.04 3.3 3.4 time(us) 3.5 3.6 3.7 V A s Revision: 1 V23990-P680-F-PM preliminary datasheet Switching Definitions Output Inverter Output inverter IGBT Figure 5 Output inverter IGBT Figure 6 Turn-off Switching Waveforms & definition of tEoff Turn-on Switching Waveforms & definition of tEon 120 180 Eoff 100 Pon Poff 140 80 Eon 100 60 % % 60 40 20 Uge10% 20 Uce3% 0 tEon Uge90% -20 -0.2 tEoff Ic 1% -20 0 Poff (100%) = Eoff (100%) = tEoff = 0.2 0.4 time (us) 89.53 12.85 0.70 0.6 0.8 2.8 1 Pon (100%) = Eon (100%) = tEon = kW mJ s Figure 7 Gate voltage vs Gate charge (measured) 3 Output inverter FRED 3.2 3.4 time(us) 89.53 18.80 0.61 kW mJ s 3.6 3.8 4 Output inverter IGBT Figure 8 Turn-off Switching Waveforms & definition of trr 25 120 Id 20 80 trr 15 40 Uge (V) 10 Ud 0 5 % 0 IRRM10% -40 -5 -80 IRRM90% -10 IRRM100% -120 -15 fitted -20 -200 VGEoff = VGEon = VC (100%) = IC (100%) = Qg = -160 0 200 400 600 Qg (nC) -15 15 600 149 4677.76 Copyright by Vincotech 800 1000 2.8 1200 3 3.2 3.4 3.6 3.8 4 4.2 time(us) Vd (100%) = Id (100%) = IRRM (100%) = trr = V V V A nC 12 600 149 -168 0.47 V A A s Revision: 1 V23990-P680-F-PM preliminary datasheet Switching Definitions Output Inverter Output inverter FRED Figure 9 Output inverter FRED Figure 10 Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 120 150 Erec Qrr 100 Id 100 80 50 tQrr tErec 60 % 0 % 40 -50 20 Prec -100 0 -150 -20 2.8 Id (100%) = Qrr (100%) = tQrr = 3 3.2 3.4 3.6 3.8 time(us) 149 29.16 1.00 A C s Copyright by Vincotech 4 4.2 4.4 4.6 3 3.2 Prec (100%) = Erec (100%) = tErec = 13 3.4 3.6 89.53 10.81 1.00 3.8 time(us) 4 4.2 4.4 4.6 kW mJ s Revision: 1 V23990-P680-F-PM preliminary datasheet Package Outline and Pinout Outline Pinout Copyright by Vincotech 14 Revision: 1 V23990-P680-F-PM preliminary datasheet PRODUCT STATUS DEFINITIONS Datasheet Status Target Preliminary Final Product Status Definition Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. First Production This datasheet contains preliminary data, and supplementary data may be published at a later date. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Full Production This datasheet contains final specifications. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. DISCLAIMER The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright by Vincotech 15 Revision: 1