V23990-P680-F-PM
preliminary datasheet
flowPACK 2 3rd gen 1200V/150A
● High power flow2 housing
● Trench Fieldstop Technology IGBT4
● Compact and low inductive design
● Motor Drive
● Power Generation
● UPS ASK MARKETING
● V23990-P680-F
Tj=25°C, unless otherwise specified
Parameter Symbol Value Unit
Inverter Transistor
Th=80°C 134
Tc=80°C 150
450
Th=80°C 313
Tc=80°C 475
tSC Tj≤150°C 10 μs
VCC VGE=15V 800 V
Inverter Diode
Th=80°C 110
Tc=80°C 145
300
Th=80°C 189
Tc=80°C 287
Thermal Properties
Tj=Tjmax
Tj=25°C
Tj=Tjmax
Tj=Tjmax
175Maximum Junction Temperature °C
1200
±20
W
A
Collector-emitter break down voltage
Repetitive peak collector current
DC collector current
VCE
ICpulse
IC
175
V1200
IFRM
Tjmax
Repetitive peak forward current
Features flow2 housing
Target Applications Schematic
Types
Maxi mum Ratings
Condition
A
V
°C
V
VRRM
Maximum Junction Temperature
Power dissipation per IGBT
VGE
Tjmax
Ptot
Short circuit ratings
Peak Repetitive Reverse Voltage
Gate-emitter peak voltage
tp limited by Tjmax
WPower dissipation per Diode Ptot
DC forward current
A
Tj=Tjmax
tp limited by Tjmax
A
IF
-40…+(Tjmax - 25) °C
Storage temperature Tstg -40…+125 °C
Top
Operation temperature under switching condition
1 Revision: 1
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V23990-P680-F-PM
preliminary datasheet
Tj=25°C, unless otherwise specified
Parameter Symbol Value Unit
Maxi mum Ratings
Condition
Insulation Properties
Vis t=2s DC voltage 4000 V
min 12,7 mm
min 12,7 mm
Clearance
Insulation voltage
Creepage distance
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V23990-P680-F-PM
preliminary datasheet
Parameter Symbol Unit
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] o r
IF [A ] o r
ID [A] TjMin Typ Max
T
j
=25°C 5 5.8 6.5
T
j
=150°C
T
j
=25°C 1.5 1.85 2.5
T
j
=150°C
T
j
=25°C 0.04
T
j
=150°C
T
j
=25°C 700
T
j
=150°C
T
j
=25°C 213
T
j
=150°C 229
T
j
=25°C 35
T
j
=150°C 44
T
j
=25°C 326
T
j
=150°C 410
T
j
=25°C 68
T
j
=150°C 104
T
j
=25°C 12.68
T
j
=150°C 18.80
T
j
=25°C 8.07
T
j
=150°C 12.85
Therm al r esi st ance chi p to heatsink per chip RthJH 0.30
Therm al r esi st ance chi p to case per chip RthJC 0.20
T
j
=25°C 1.3 1.94 2.5
T
j
=150°C 1.98
T
j
=25°C 143
T
j
=150°C 168
T
j
=25°C 287
T
j
=150°C 465
T
j
=25°C 15.56
T
j
=150°C 29.16
di
(
rec
)
max T
j
=25°C 3267
/d
t
T
j
=150°C 1615
T
j
=25°C 5.71
T
j
=150°C 10.81
Therm al r esi st ance chi p to heatsink per chip RthJH 0.50
Therm al r esi st ance chi p to case per chip RthJC 0.33
nA
Tj=25°C
5
Tj=25°C
V
V
nC
150
600
±15
VCE=VGE
0
Vcc=960V
tr
td(off)
QGate
Cies
Qrr
trr
VF
Peak reverse recovery current
Reverse transfer capaci t ance
Diode forward voltag e
Gate charge
Reverse recovery time
Reverse recovered energy
Peak rate of fall of recovery current
IGES
VGE(th)
VCE(sat)
ICES
Erec
Coss
Rgint
tf
Eon
Eoff
IRRM
td(on)
Crss
Input capacitance
Output capacitance
Turn-off energy loss per pulse
Collector-emitter saturation voltage
ValueConditions
Characteristic Values
470
A
μC
mWs
A/μs
f=1MHz
Rgon=4 Ω
0
20
15
±15
150
150
Collector-emitter cut-off current incl. Diode
Fall time
Turn-off delay time
Turn-on delay time
Rise time
Gate-emitter leakage current
Turn-on energy loss per pulse
Reverse recovered charge
Inverter Di ode
Integrated Gate resistor
Inverter Transist or
Gate emitter threshold voltage
Rgoff=4 Ω±15
0
150
150
0.006
600
1200
25
Rgon=4 Ω
750
8800
ns
mA
Ω
ns
580
V
pF
mWs
K/W
Ther m al grease
thickness≤50um
λ = 1 W/mK K/W
Ther m al grease
thickness≤50um
λ = 1 W/mK
3Revision: 1
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V23990-P680-F-PM
preliminary datasheet
Figure 1 Output inverter IG B T Figure 2 Output inverter IG B T
Ty pi cal output characteristics
IC = f(VCE) IC = f(VCE)
At At
tp = 250 μstp = 250 μs
Tj = 25 °C Tj = 150 °C
VGE from 7 V to 17 V in steps of 1 V VGE from 7 V to 17 V in steps of 1 V
Figure 3 Output inverter IG B T Figure 4 Output inverter FRED
Ty pi cal transfer characteristics Ty pi cal diode forward current as
IC = f(VGE) a function of forward vo l tage
IF = f(VF)
At At
tp = 250 μstp = 250 μs
VCE = 0V
Output Inverter
Ty pi cal output characteristics
0
75
150
225
300
375
450
012345
VCE (V)
IC (A)
0
30
60
90
120
150
024681012
VGE (V)
IC (A)
Tj = 25°C
Tj = Tjmax-25°C
0
75
150
225
300
375
450
0 0.5 1 1.5 2 2.5 3 3.5 4
VF (V)
IF (A)
Tj = 25°C
Tj = Tjmax-25°C
0
75
150
225
300
375
450
012345
VCE (V)
IC (A)
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V23990-P680-F-PM
preliminary datasheet
Figure 5 Output inverter IG B T Figure 6 Output inverter IG B T
Typical switchi ng energy losses Typical switchi ng energy losses
as a function of collector current as a function of gate resistor
E = f(IC)E = f(RG)
With an inductive load at With an inductive load at
Tj = 25/150 °C Tj = 25/150 °C
VCE =600 V VCE =600 V
VGE =±15 V VGE =±15 V
Rgon =4ΩIC =150 A
Rgoff = 4Ω
Figure 7 Output inverter IG B T Figure 8 Output inverter IG B T
Typical rev erse recovery energy loss Typical rev erse recovery energy loss
as a function of collector current as a function of gate resistor
Erec = f(Ic)E
rec = f(RG)
With an inductive load at With an inductive load at
Tj = 25/150 °C Tj = 25/150 °C
VCE =600 V VCE =600 V
VGE =±15 V VGE =±15 V
Rgon =4ΩIC =150 A
Output Inverter
Eon
Tj = Tjmax - 25°C
Eoff
Eon
Tj = 25°C
Eoff
0
8
16
24
32
40
0 50 100 150 200 250 300
IC(A)
E (mWs)
Eoff
Eon
Tj = Tjmax - 25°C
Eon
Tj = 25°C
Eoff
0
8
16
24
32
40
048121620
RG(
Ω
)
E (mWs )
Tj = Tjmax -25°C
Erec
Tj = 25°C Erec
0
3
6
9
12
15
0 50 100 150 200 250 300
IC(A)
E (mWs)
Tj = Tjmax -25°C
Erec
Tj = 25°C
Erec
0
3
6
9
12
15
048121620
RG(
Ω
)
E (mWs )
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V23990-P680-F-PM
preliminary datasheet
Figure 9 Output inverter IG B T Figure 10 Output inverter IG B T
Ty pi cal switching times as a Ty pi cal switchi ng ti m es as a
function of collector current function of gate resistor
t = f(IC)t = f(RG)
With an inductive load at With an inductive load at
Tj = 150 °C Tj = 150 °C
VCE =600 V VCE =600 V
VGE =±15 V VGE =±15 V
Rgon =4ΩIC =150 A
Rgoff = 4Ω
Figure 11 Output inverter FRED Figure 12 Output inverter FRED
Ty pi cal reverse recovery ti me as a Ty pi cal rev erse recovery time as a
function of collector current function of IGBT turn on gate resistor
trr = f(Ic) trr = f(Rgon)
At At
Tj = 25/150 °C Tj = 25/150 °C
VCE =600 V VR =600 V
VGE =±15 V IF =150 A
Rgon =4ΩVGE =±15 V
Output Inverter
tdoff
tf
tdon
tr
0.001
0.01
0.1
1
0 50 100 150 200 250 300
IC(A)
t (μs)
Tj = Tjmax -25°C
trr
Tj = 25°C trr
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 4 8 12 16 20
Rgon(
Ω
)
t rr(μs)
tdoff
tf
tdon
tr
0.001
0.01
0.1
1
0 4 8 12 16 20
RG(
Ω
)
t (μs)
trr
Tj = Tjmax -25°C
Tj = 25°C trr
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 50 100 150 200 250 300
IC(A)
t rr(μs)
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V23990-P680-F-PM
preliminary datasheet
Figure 13 Output inverter FRED Figure 14 Output inverter FRED
Ty pi cal reverse recovery charge as a Typical reverse recovery charge as a
function of collector current function of IGBT turn on gate resistor
Qrr = f(IC)Q
rr = f(Rgon)
At
At At
Tj = 25/150 °C Tj = 25/150 °C
VCE =600 V VR =600 V
VGE =±15 V IF =150 A
Rgon =4ΩVGE =±15 V
Figure 15 Output inverter FRED Figure 16 Output inverter FRED
Ty pi cal reverse recovery current as a Ty pi cal rev erse recovery current as a
function of collector current function of IGBT turn on gate resistor
IRRM = f(IC)I
RRM = f(Rgon)
At At
Tj = 25/150 °C Tj = 25/150 °C
VCE =600 V VR =600 V
VGE =±15 V IF =150 A
Rgon =4ΩVGE =±15 V
Output Inverter
IRRM
Tj = Tjmax - 25°C
IRRM
Tj = 25°C
0
40
80
120
160
200
240
0 4 8 12 16 20
Rgon (
Ω
)
IrrM (A)
Tj = Tjmax -25°C Qrr
Tj = 25°C
Qrr
0
8
16
24
32
40
048121620
Rgon(Ω)
Qrr (μC)
Tj = Tjmax -25°C IRRM
Tj = 25°C
IRRM
0
40
80
120
160
200
240
0 50 100 150 200 250 300
IC(A)
IrrM (A)
Tj = Tjmax -25°C
Qrr
Tj = 25°C Qrr
0
8
16
24
32
40
0 50 100 150 200 250 300
IC(A)
Qrr (μC)
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V23990-P680-F-PM
preliminary datasheet
Figure 17 Output inverter FRED Figure 18 Output inverter FRED
Typical rate of fall of forward Typical rate of fall of forward
and reverse recovery current as a and reverse recovery current as a
function of collector current function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Ic) dI0/dt,dIrec/dt = f(Rgon)
At At
Tj = 25/150 °C Tj = 25/150 °C
VCE =600 V VR =600 V
VGE =±15 V IF =150 A
Rgon =4ΩVGE =±15 V
Figure 19 Output inverter IG B T Figure 20 Output inverter FRED
IGBT transi ent thermal impedance FRED transient therm al impedance
as a function of pulse width as a function of pulse width
ZthJH = f(tp)Z
thJH = f(tp)
At At
D = tp / T D = tp / T
RthJH =0.30 K/W RthJH =0.50 K/W
IGBT t herm al model values FRED thermal model values
R (C/W) Tau (s) R (C/W) Tau (s)
0.03 4.8E+00 0.03 1.0E+01
0.06 1.1E+00 0.10 1.4E+00
0.10 1.8E-01 0.12 1.8E-01
0.09 3.7E-02 0.19 3.3E-02
0.01 3.8E-03 0.03 4.7E-03
0.01 3.9E-04 0.03 4.2E-04
Output Inverter
tp (s)
ZthJH (K/W)
100
10-1
10-2
10-4 10-3 10-2 10-1 100101
1
10-5
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
tp (s)
ZthJH (K/W)
100
10-1
10-2
10-4 10-3 10-2 10-1 100101
1
10-5
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
dI0/dt
Tj = Tjmax - 25°C
dIrec/dt
Tj = 25°C
0
1000
2000
3000
4000
5000
6000
7000
0 4 8 12 16 20
Rgon (Ω)
direc / dt (A/μs)
Tj = Tjmax - 25°C
dI0/dt Tj = 25°C
0
1000
2000
3000
4000
5000
6000
0 50 100 150 200 250 300
IC(A)
direc / dt (A/μs)
dIrec/dt
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V23990-P680-F-PM
preliminary datasheet
Figure 21 Output inverter IG B T Figure 22 Output inverter IG B T
Power di ssi pati on as a Collector current as a
function of heatsink temperature function of heatsink temperature
Ptot = f(Th)I
C = f(Th)
At At
Tj =175 °C single heating Tj = 175 °C
overall heating VGE =15 V
Figure 23 Output inverter FRED Figure 24 Output inverter FRED
Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
Ptot = f(Th)I
F = f(Th)
At At
Tj = 175 °C single heating Tj = 175 °C
overall heating
Output Inverter
0
100
200
300
400
500
600
0 50 100 150 200
Th (oC)
Ptot (W)
0
50
100
150
200
0 50 100 150 200
Th (oC)
IC (A)
0
80
160
240
320
400
0 50 100 150 200
Th (oC)
Ptot (W)
0
50
100
150
200
0 50 100 150 200
Th (oC)
IF (A)
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V23990-P680-F-PM
preliminary datasheet
Figure 25 Output inverter IG B T Figure 26 Output inverter IG B T
Safe operating area as a function Gate vo l tage vs Gate charge
of collector-emi tter voltage
IC = f(VCE)V
GE = f(Qg)
At At
D = single pulse IC = 150 A
Th = 80 ºC
VGE = ±15 V
Tj =T
jmax ºC
Output Inverter
VCE (V)
IC (A)
103
100
10-1
101
102
101102
100m
DC
100103
100u
10m 1m
10u
0
5
10
15
20
0 200 400 600 800
Qg (nC)
VGE (V)
240
V
960
V
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V23990-P680-F-PM
preliminary datasheet
T
j
150 °C
R
on 4 Ω
Rgoff 4 Ω
Figure 1 Output inverter IG B T Figure 2 Output inverter IG B T
Turn-off Switching Wav eforms & definition of tdoff, tEoff Turn-on Swi tching Wav eforms & definiti on of tdon, tEon
(tEof
f
= integ r ati n g time for Eof
f
)(t
Eon = integ rating tim e fo r Eon)
VGE (0%) = -15 V VGE (0%) = -15 V
VGE (100%) = 15 V VGE (100%) = 15 V
VC (100%) = 600 V VC (100%) = 600 V
IC (100%) = 149 A IC (100%) = 149 A
tdoff = 0.41 μstdon = 0.23 μs
tEoff =0.70 μstEon =0.61 μs
Figure 3 Output inverter IG B T Figure 4 Output inverter IG B T
Turn-off Switching Wav eforms & definition of tf Turn-on Swi tchi ng Waveforms & defini tion of t
r
VC (100%) = 600 V VC (100%) = 600 V
IC (100%) = 149 A IC (100%) = 149 A
tf =0.10 μstr =0.04 μs
Swit ching De finitions Output Inverter
General conditions
=
=
=
Ic 1%
Uce 90%
Uge 90%
-40
-20
0
20
40
60
80
100
120
140
-0.2 0 0.2 0.4 0.6 0.8 1
time (us)
%
t
doff
tEoff
Uce
Ic
Uge
Ic10%
Uge10%
tdon
Uce3%
-40
0
40
80
120
160
200
240
2.6 2.8 3 3.2 3.4 3.6 3.8 4
time(us)
%
Ic
Uce
tEon
Uge
fitted
Ic10%
Ic 90%
Ic 60%
Ic 40%
-20
0
20
40
60
80
100
120
140
0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65
time (us)
%
Uce
Ic
tfIc10%
Ic90%
-40
0
40
80
120
160
200
240
3 3.1 3.2 3.3 3.4 3.5 3.6 3.7
time(us)
%
tr
Uce
Ic
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V23990-P680-F-PM
preliminary datasheet
Figure 5 Output inverter IG B T Figure 6 Output inverter IG B T
Turn-off Switching Wav eforms & definition of tEof
f
Turn-on Swi tchi ng Waveforms & defini tion of tEon
Poff (100%) = 89.53 kW Pon (100%) = 89.53 kW
Eoff (100%) = 12.85 mJ Eon (100%) = 18.80 mJ
tEoff =0.70 μstEon =0.61 μs
Figure 7 Output inverter FRED Figure 8 Output inverter IGBT
Gate vo l tage vs Gate charge (measured) Turn-off Switching Wav eforms & definition of tr
r
VGEoff = -15 V Vd (100%) = 600 V
VGEon = 15 V Id (100%) = 149 A
VC (100%) = 600 V IRRM (100%) = -168 A
IC (100%) = 149 A trr = 0.47 μs
Qg = 4677.76 nC
Swit ching De finitions Output Inverter
Ic 1%
Uge90%
-20
0
20
40
60
80
100
120
-0.2 0 0.2 0.4 0.6 0.8 1
time (us)
%
Pof
f
Eoff
tEoff
Uce3%
Uge10%
-20
20
60
100
140
180
2.8 3 3.2 3.4 3.6 3.8 4
time(us)
%
Pon
Eon
tEon
-20
-15
-10
-5
0
5
10
15
20
25
-200 0 200 400 600 800 1000 1200
Qg (nC)
Uge (V)
IRRM10%
IRRM90%
IRRM100%
trr
-160
-120
-80
-40
0
40
80
120
2.8 3 3.2 3.4 3.6 3.8 4 4.2
time(us)
%
Id
Ud
fitted
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V23990-P680-F-PM
preliminary datasheet
Figure 9 Output inverter FRED Figure 10 Output inverter FRED
Turn-on Swi tchi ng Waveforms & defini tion of tQr
r
Turn-on Swi tchi ng Waveforms & defini tion of tErec
(tQrr = integr ati n g time for Q r
r
)(t
Erec= integrati n g time for Erec)
Id (100% ) = 149 A Prec (100%) = 89.53 kW
Qrr (100%) = 29.16 μCErec (100%) = 10.81 mJ
tQrr =1.00 μstErec = 1.00 μs
Swit ching De finitions Output Inverter
tQrr
-150
-100
-50
0
50
100
150
2.8 3 3.2 3.4 3.6 3.8 4 4.2 4.4 4.6
time(us)
%
Id
Q
rr
-20
0
20
40
60
80
100
120
3 3.2 3.4 3.6 3.8 4 4.2 4.4 4.6
time(us)
%
Prec
Erec
tErec
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V23990-P680-F-PM
preliminary datasheet
Outline
Pinout
Package Outline and Pinout
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V23990-P680-F-PM
preliminary datasheet
PRODUCT STATUS DEFINITI ONS
Formative or In Design
First Product ion
Full Production
DISCLAIMER
LIFE SUPPORT POLICY
As used herein:
The information given i n this dat asheet describes t he t ype of com ponent and does not represent assured characteri stic s. For tested
values pleas e contac t Vincot ech.Vi ncotec h reserves the ri ght to make changes without further notic e to any products herein to improve
reliability, func t i on or design. Vincotech does not assume any liability arising out of the applic at ion or use of any product o r circui t
described herei n; neither does i t convey any li cense under it s patent ri ghts, nor the rights of others.
Vincot ech products are not authori sed for use as crit i cal components i n l ife support devi ces or s ys tems without the express written
approval of Vincotec h.
1. Life support devices or systems are devices or systems which, (a) are intended f or surgical i mplant i nto the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in acc ordance with instruc t ions for use provided in labelling can be
reasonably expected t o result in signifi cant inj ury to the user.
2. A critical component is any component of a life support devi ce or system whose f ai l ure to perform can be reas onabl y expected to
cause t he failure of the life support devic e or system, or to affect it s safety or effec tiveness .
Target
Product StatusDatasheet Status Defini t ion
This datasheet contains the design specifications for
product development. Specifications may change in any
manner without notice. The data contained is exclusively
intended for technically trained staff.
Preliminary
This datasheet cont ains pr elim inar y data, and
supplementary data may be published at a later date.
Vincotech reserves t he r ight to make changes at any time
without notice in order to improve design. The data
contained is exclusively intended for technically trained
staff.
Final
This datasheet contains final specifications. Vincotech
reserves the right to mak e changes at any time without
notice in order to im pr ove design. The data contained is
exclusively intended for technically trained staff.
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