NPN POWER DARLINGTON |_2N6724,25 - TRANSISTORS 3875081 GE SOLID STATEOL DEM 3875081 oo1syy? 1 | ia 35-27 92GU45,45A 40-50 VOLTS 2 AMPS, 1 WATTS Features; NPN COLLECTOR @ Lamp driver Digit driver eMITTER ose Directly compatible with bipolar and MOS I/C drive ewtren CASE STYLE TO-237 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) Face, | S -405(2.67) 260(7.11) | q y__ 52 4 -260(6 60) 210(5 33) ' 170(4 32) ssoq.an searnia/ | mi) 38) ' PLANE i A.019( 48) or[ 0181.46) ore.4y) ] 00 (12 7) 016(.41} .016(.41) 014( 36) ~. .022(.56) ol 022(.56) g _020(.51) ] .016{.41} 0166.41) .014( 38) TYPE TEAM | TERM.2 TERMS TAB O-237 | EMITTER | BASE | COLLECTOR | COLLECTOR maximum ratings (Ta = 25C) (unless otherwise specified) RATING SYMBOL 92GU45/2N6724 92GU45A/2N6725 UNITS Collector-Emitter Voltage VcEO 40 50 Volts Collector-Emitter Voltage VcES 50 - 60 Volts Emitter Base Voltage VEBO 12 12 Volts Collector Current Continuous Ic 2.0 2.0 A Total Power Dissipation @ Ta = 25C Ppp* 1.0 1.0 Watts Operating and Storage Junction Temperature Range Ty, Tsta ~55 to +150 ~55 to +150 C thermal characteristics Thermal Resistance, Junction to Ambient Rea 200 200 C/W Thermal Resistance, Junction to Case Rac 62.5 62.5 : C/W * Pop = Practical Power Dissipation, [.e., that power which can be dissipated with the device installed in a typical manner on a printed circuit board with total copper run area equal to 1.0 in.2 minimum. 1372 G-09 3a7s081 G E SOLIO STATED] DEP} 3a75081 gos 3 . IB. electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL{ MIN | TYP | MAX | UNIT off characteristics os Collector-Emitter Breakdown Voltage 92GU45,2N6724 BVCES 40 _ _ Volts (Ig = 1.0mA, Vee = OV) 92GU45A,2N6725 50 - Collector Cutoff Current IcBo , , (Vop = 30V, IE = OA) 92GU45,2N6724 _ 100 nA (Vop = 40V, Ie = OA) 92GU45A,2N6725 Emitter Cutoff Current (Veg = 10V, Ig = 0) lEBO - - 100 WA on characteristics DC Current Gain hee 25,000 _ _ _ tle = 1mA, Vo Ce 5V) = 500mA, gee 5V) 15,000 _ - IS = 1000mA, CE= By) 4,000 _ _ Collector-Emitter Saturation Voltage ' (I = 1000m<A, Ip = 2mA) VcE(sat) _ _ 1.6 V (Ig = 200mA, Ig = 2mA) _ _ 1.0 Base-Emitter Saturation Voltage (Io = 1000mA, Vog = 2mA) VBE (sat) - - 2.0 Volts Base-Emitter On Voltage (I = 1000mA, Voge = 5V) VBE(on) - _ 2.0 Volts 1373 G-10 834