VRRM VDRM IPULSE VDcmax = 13.5 kV = 13.5 kV = 60 kA = 12 kV High Voltage High Current Thyristor Switch for Pulsed Power Applications 5STF 07Z1350 * * * * * * * Features Multichip Design with 4 Wafers in Series For Single Pulse Applications Voltage Sharing possibility Free Floating Silicon Technology Glazed Ceramic Presspack Housing Compact Design High Reliability VDRM Repetitive forward blocking 13.5 kV Tvj = 0 ... 125C VRRM Repetitive reverse blocking 13.5 kV VDC Permanent DC voltage for 100 FIT failure rate At Tj 50 C. Ambient cosmic radiation at sea level in open air. 9 kV VDC Max. DC voltage 12 kV For 60 sec at Tj 50C IPULSE Max. Pulse Current 60 kA Half sine wave, Tj 50C, tp 500 s di/dt Max. current rate of rise 500 A/s IG = 2 mA / diG/dt = 1,5 A/s 6 2 It Limiting load integral VT Forward voltage drop 2.16 V Per Wafer level IF = 3000 A, Tj = 50 C VT0 Threshold voltage 1.02 V Per Wafer level at Tj = 50 C rT Slope resistance 0.38 m Per Wafer level at Tj = 50 C td Turn-on delay time 2.0 s VD = 0.4 Vdrm, IG = 2.0 A 0.9 x10 A2s Tp = 500 s, Tj = 50 C A special HV Gate Drive Unit, including sharing resistors is available. See Datasheet P/N 5SPY 94-04 (RAM 94-04) ABB Switzerland Ltd reserves the right to change specifications without notice Pulse Power Device Mechanical data min. 17 kN max. 24 kN Dp Pole-piece diameter 47 mm H Housing thickness 51 mm M Weight 1,0 kg DS Surface creepage distance 42 mm Da Air strike distance 29 mm 122 ABB Switzerland Ltd, Semiconductors Pulse Power Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Tel.: +41-58-586-1742 Fax: +41-58-586-1310 E-Mail: pulsepower.abbsem@ch.abb.com Internet: www.abb.com/semiconductors 5STF 07Z1350