To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FK10SM-10 HIGH-SPEED SWITCHING USE FK10SM-10 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr VDSS ................................................................................ 500V rDS (ON) (MAX) .............................................................. 1.13 ID ......................................................................................... 10A Integrated Fast Recovery Diode (MAX.) ........150ns q GATE w DRAIN e SOURCE r DRAIN q e TO-3P APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Conditions VGS = 0V VDS = 0V Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value Ratings 500 30 10 Unit V V A 30 10 30 125 -55 ~ +150 A A A W C -55 ~ +150 4.8 C g Feb.1999 MITSUBISHI Nch POWER MOSFET FK10SM-10 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 500V, VGS = 0V Gate-source threshold voltage Drain-source on-state resistance ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf Turn-off delay time Fall time Source-drain voltage VSD Rth (ch-c) VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50 IS = 5A, VGS = 0V Channel to case Thermal resistance Reverse recovery time trr Limits Test conditions IS = 10A, dis/dt = -100A/s Unit Min. Typ. Max. 500 30 -- -- -- -- -- -- 10 V V A -- 2 -- -- -- 3 0.88 4.40 1 4 1.13 5.65 mA V V 3.3 -- -- -- 5.5 1100 130 20 -- -- -- -- S pF pF pF -- -- -- -- 20 30 95 35 -- -- -- -- ns ns ns ns -- 1.5 2.0 V -- -- -- -- 1.00 150 C/W ns PERFORMANCE CURVES MAXIMUM SAFE OPERATING AREA 5 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 200 160 120 80 40 100 7 5 3 2 10-1 0 0 50 100 150 CASE TEMPERATURE TC (C) 200 tw=10s 101 7 5 3 2 100s 1ms 10ms TC = 25C Single Pulse DC 7 5 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FK10SM-10 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V 20 OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V 6V PD = 125W 10 TC = 25C Pulse Test 12 8 5V PD= 125W 4 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 6V 16 8 6 5V 4 TC = 25C Pulse Test 2 4V 0 0 10 20 30 40 0 50 16 20 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0 32 ID = 20A 24 16 10A 8 5A 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 12 ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.6 VGS = 10V 20V 1.2 0.8 0.4 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 16 FORWARD TRANSFER ADMITTANCE yfs (S) TC = 25C VDS = 50V Pulse Test 12 8 4 0 TC = 25C Pulse Test 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 20 DRAIN CURRENT ID (A) 8 DRAIN-SOURCE VOLTAGE VDS (V) TC = 25C Pulse Test 0 4 DRAIN-SOURCE VOLTAGE VDS (V) 40 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) VDS = 10V Pulse Test TC=25C 75C 3 2 125C 100 7 5 3 2 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK10SM-10 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 2 3 2 3 2 Crss 101 Tch = 25C 7 f = 1MHz 5 VGS = 0V 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) 3 2 102 7 5 td(off) 3 2 tr td(on) tf 5 7 100 2 3 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 SOURCE CURRENT IS (A) 16 VDS = 100V 200V 12 400V 8 4 0 101 7 5 5 7 101 2 3 DRAIN-SOURCE VOLTAGE VDS (V) Tch = 25C ID = 10A 20 40 60 80 VGS = 0V Pulse Test 32 TC=125C 24 25C 16 75C 8 0 100 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 3 2 100 7 5 3 2 10-1 Tch = 25C VDD = 200V VGS = 10V RGEN = RGS = 50 101 10-1 20 0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) Coss 102 7 5 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) CAPACITANCE Ciss, Coss, Crss (pF) GATE-SOURCE VOLTAGE VGS (V) 7 5 SWITCHING TIME (ns) Ciss 103 0 50 100 150 200 250 CHANNEL TEMPERATURE Tch (C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) Feb.1999 MITSUBISHI Nch POWER MOSFET FK10SM-10 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) 101 7 5 3 2 3 2 Irr 101 7 5 101 2 3 5 7 102 0 Tch = 25C 10 Tch = 150C 7 5 2 3 5 7 103 SOURCE CURRENT dis/dt (-A/s) 3 2 3 2 102 7 5 101 7 5 trr Irr 3 2 Tch = 25C Tch = 150C 101 0 10 2 3 5 7 101 2 3 3 2 100 5 7 102 SOURCE CURRENT IS (A) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 5 5 IS = 10A VGS = 0V 3 3 VDD = 250V 2 2 trr 102 7 5 DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 102 103 dis/dt = -100A/s 7 7 VGS = 0V 5 5 VDD = 250V REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) 1.4 TRANSIENT THERMAL IMPEDANCE Zth (ch - c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) HIGH-SPEED SWITCHING USE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 D=1 0.5 0.2 0.1 PDM 10-1 7 5 3 2 tw 0.05 0.02 0.01 T D= tw T Single Pulse 10-2 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999