Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Feb.1999
FK10SM-10
¡VDSS ................................................................................500V
¡rDS (ON) (MAX) ..............................................................1.13Ω
¡ID ......................................................................................... 10A
¡Integrated Fast Recovery Diode (MAX.) ........150ns
500
±30
10
30
10
30
125
–55 ~ +150
–55 ~ +150
4.8
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg—
V
V
A
A
A
A
W
°C
°C
g
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
Typical value
MAXIMUM RATINGS (Tc = 25°C)
OUTLINE DRAWING Dimensions in mm
TO-3P
MITSUBISHI Nch POWER MOSFET
FK10SM-10
HIGH-SPEED SWITCHING USE
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
Parameter ConditionsSymbol Ratings Unit
15.9MAX. 4.5
1.5
φ 3.2
5.0
20.0
19.5MIN.
2
1.0
5.45
4.4
0.6 2.8
qwe
5.45
2
4
4
r
wr
q
e
q GATE
w DRAIN
e SOURCE
r DRAIN
Feb.1999
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
MITSUBISHI Nch POWER MOSFET
FK10SM-10
HIGH-SPEED SWITCHING USE
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 500V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
IS = 10A, dis/dt = –100A/µs
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
500
±30
—
—
2
—
—
3.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3
0.88
4.40
5.5
1100
130
20
20
30
95
35
1.5
—
—
—
—
±10
1
4
1.13
5.65
—
—
—
—
—
—
—
—
2.0
1.00
150
200
160
120
80
40
0200150100500
5
3
2
10
1
7
5
3
2
10
0
7
5
7
5
3
2
10
–1
23 5710
1
10
0
23 5710
2
23 5710
3
T
C
= 25°C
Single Pulse
tw=10µs
100µs
1ms
10ms
DC
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
PERFORMANCE CURVES
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10SM-10
HIGH-SPEED SWITCHING USE
10
1
7
5
3
2
10
–1
10
–1
23 5710
0
10
0
7
5
3
2
23 5710
1
T
C
=25°C
V
DS
= 10V
Pulse Test
125°C
75°C
20
16
12
8
4
00 4 8 12 16 20
T
C
= 25°C
V
DS
= 50V
Pulse Test
10
8
6
4
2
00 4 8 12 16 20
P
D
= 125W
T
C
= 25°C
Pulse Test
V
GS
= 20V 10V 6V
4V
5V
40
32
24
16
8
00 4 8 12 16 20
I
D
= 20A
T
C
= 25°C
Pulse Test
10A
5A
02310
–1
5710
0
23 5710
1
23 5710
2
2.0
1.6
1.2
0.8
0.4
T
C
= 25°C
Pulse Test V
GS
= 10V
20V
20
16
12
8
4
00 1020304050
P
D
=
125W
T
C
= 25°C
Pulse Test
6V
5V
V
GS
= 20V
10V
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE y
fs
(S)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10SM-10
HIGH-SPEED SWITCHING USE
5.0
4.0
3.0
2.0
1.0
0–50 0 50 100 150
V
DS
= 10V
I
D
= 1mA
20
16
12
8
4
00 20406080100
V
DS
= 100V
400V
200V
Tch
= 25°C
I
D
= 10A
23 5710
0
10
3
7
5
3
2
10
2
7
5
23 5710
1
10
–1
10
1
3
2
Tch = 25°C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
t
f
t
d(off)
t
r
t
d(on)
23 5710
2
10
3
7
5
3
2
10
2
7
5
3
2
10
1
2
23 5710
1
23 5710
0
23
7
5
Ciss
Tch = 25°C
f = 1MHz
V
GS
= 0V
Coss
Crss
40
32
24
16
8
00 0.8 1.6 2.4 3.2 4.0
T
C
=125°C
25°C
75°C
V
GS
= 0V
Pulse Test
10
0
7
5
3
2
10
–1
0
10
1
7
5
3
2
50 100 150 200 250
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
CHANNEL TEMPERATURE Tch (°C)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10SM-10
HIGH-SPEED SWITCHING USE
103
7
5
3
2
10023 5710
1
102
7
5
3
2
23 5710
2
101
102
7
5
3
2
101
7
5
3
2
100
dis/dt = –100A/µs
VGS = 0V
VDD = 250V
Irr
trr
Tch = 25°C
Tch = 150°C
1.4
1.2
1.0
0.8
0.6
0.4 –50 0 50 100 150
VGS = 0V
ID = 1mA
10
–4
101
7
5
3
2
100
7
5
3
2
10–1
7
5
3
2
23 57 23 57 23 57 23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
10–2
PDM
tw
D= T
tw
T
D=1
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
5
3
2
10123 5710
2
102
7
5
3
2
23 5710
3
101
3
2
101
7
5
5
7
5
7
5
3
2
100
IS = 10A
VGS = 0V
VDD = 250V
Irr
trr
Tch = 25°C
Tch = 150°C
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
REVERSE RECOVERY TIME trr (ns)
REVERSE RECOVERY CURRENT Irr (A)
REVERSE RECOVERY CURRENT Irr (A)
SOURCE CURRENT IS (A)
DIODE REVERSE VS.
SOURCE CURRENT CHARACTERISTIC
(TYPICAL)
REVERSE RECOVERY TIME trr (ns)
SOURCE CURRENT dis/dt (–A/µs)
DIODE REVERSE VS.
SOURCE CURRENT dis/dt CHARACTERISTIC
(TYPICAL) TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
PULSE WIDTH tw (s)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
