TOSHIBA {DISCRETE/OPTOF 44 DE soazeso 0016739 0 G 88D 16739 1-29-\3 SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 28K 678 TECHNICAL DATA SILICON N CHANNEL MOS TYPE (7-MOS#) \ INDUSTRIAL APPLICATIONS Unit in mm 9097250 TOSHIBA CDISCRETE/OPTO) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS, 2QSMAX 33202 260405 FEATURES: + Low Drain-Source ON Resistance : Rps(ONn)=0.322 (Typ. + High Forward Transfer Admittance : |Yegl=9.0S (Typ.) + Low Leakage Current : Iggg=t]00nA(Max.) @ Vgg=+20V Ipss= 300HA(Max.) @ VYps=500V - Enhancement~Mode : V~p=2.0.4.0V @ Vps=10V,Ip=1mA 200+06 ow MAXIMUM RATINGS (Ta=25C) 1 GATE 2 DRAIN (HEAT SINK} CHARACTERISTIC SYMBOL RATING UNIT 3 SOURCE Drain-Source Voltage Vpsx 500 V JEDEC - Drain-Gate Voltage (Regg=20k2)| Vpcr 500 Vv RIA = Gate-Source Voltage Vess 20 v TOSHIBA 2-21F1B DC(Tc=25C) Ip 130 Weight : 9.75g Drain Current A Pulse Ipp 52 Drain Power Dissipation (Te=25C) Pp 150 W Channel Temperature Tch 150 C Storage Temperature Range Tstg ~55%150 C THERMAL CHARACTERISTICS - CHARACTERISTIC SYMBOL MAX, UNIT Thermal Resistance, Junction to Case Ren(j-c) 0.83 C/W Thermal Resistance, Junction to Ambient Rth(j-a) 30 C/W Muximum Lead Temperature for Soldering Ty 300 C Purposes (1.6mm from case for 10 seconds) TOSHIBA CORPORATION GTIASA 108 - TOSHIBA {DISCRETE/OPTO} 44 pe Bsozeso OOlb?740 7? i 9097250 TOSHIBA (DISCRETE/OPTO) SSD 16740 DT-29-\3 Ren 28K678 TECHNICAL DATA ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.| MAX.|UNIT Gate Leakage Current Igss | Vas=t20V, Vps=0V - - 100] nA Drain Cut-off Current Ipss_ | Yps=500V, Vgs=0V - - 300 | uA Drain-Source Breakdown Voltage Vprypss| Ip=10mA, Vgs=0V 500; - - Vv Gate Threshold Voltage Vth Yps=10V, Ip=imA 2.0] - 4.0} V Forward Transfer Admittance lYes| Vps=10V, Ip=7A 6.0] 9.0 - S Drain-Source ON Resistance Rps(on)|Ip=7A Vgs=10V - |0.32]}0.40] Q Drain-Source ON Voltage Vps(On)| Ip=13A , Veg=10V - 4.8] 6.3 Vv Input Capacitance Ciss - 2300 | 3600 Reverse Transfer Capacitance Crss_|Vps=10V, Veg=0V, f=1MHz - 450 | 680] pF Output Capacitance Coss - 1000 | 1400 ; ; Ip=7A - Rise Time tr 10V v1 a Vour 70 140 Turn-on Time ton ot lL 2 - 100 | 200 Switching Time iH 8 ns Fall Time te |, 10s - 75 | 150 : < cm Turn-off Time| toff Ipmisig es YDD8210V1 1350 | 700 Total Gate Charge . (Gate-Source Pius Gate-Drain) Qg 7 82] 110 : Ip=13A , Vgg=10V nc Gate-Source Charge Qes - 47 - Vpp#400V Gate-Drain ("Miller") Charge Qed - 35 - SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.) MAX.|UNIT Continuous Drain Reverse Current Ipr -- - - 13 A Pulse Drain Reverse Current Iprp -- - - 52 A Diode Forward Voltage Vpsr_ | Ipr=13A Vgg=0V - - 1.8 Vv Reverse Recovery Time trr Tpp=13A - 400 - ns Reverse Recovered Charge Qrr | dIpp/dt=100A/us - [4.0] - |{ uc TOSHIBA CORPORATION GTIASA ~ 109 -