DIONICS INC. 2N2907A-2N2905A om jj. 2N2906A-2N2904A 2N2907-2N2905 2N2906-2N2904 HIGH CURRENT (1.0 AMP) TRANSISTOR CHIPS DESIGNED FOR HYBRID CIRCUIT APPLICATIONS. PNP SILICON The high efficiency parallel emitter construction provides improved beta retention at high current levels. The large area bonding pads are positioned for maximum flexibility of substrate layout. Unique surface stabilization processing results in lower leakage currents and prevents the beta de- gradation frequently encountered during the ex- tended high temperature assembly operations required for complex hybrid circuit construction. Chips are gold backed for eutectic die-attach, and have aluminum bonding pads for all conventional wire bonding techniques. O.C. CURRENT GADH PULSEO TYPICAL FE v5 Ic WOEs LO OG oI COLLECTOR CURRENT = IW MILE AMPERES bo Lo Loa ana 1ona ____ 100% Probe Tesled lo These Faramelers @ 25C _>< Guaranleed> (tadted on eariple baala) hee Vega Ves Vean ees Cor 4 Ve 10 Youa Min. Volta Min, Volts Min, ma Max. Vee (SAT) pF Max. MH; Min. ____ Bese El Ip De Volts Mix. Gg 1OY ay SOmnAL Ble | Ele Wi, Mp4 Ona Toe Boy Gl=s0mA fy=0 Vie nO imA | iim | Oma) 10 i= ig==0 [r-=8 Teeth Tf=<100KH; 1-T00MH; 2N 28074, 100 | 100 | 100 2N 26054, MIN | MIN | 300 60 60 5 10 o4 a 200 2N 29064, 40 40 ah 2N 23044, MIN | MIN | 720 2 SF 50 75 100: 2M 2005 AIM | MIN 300 60 40 5 20 O4 8 200 2M 22h06 26. a5 40: 2M 2904 MIN | MIM} 120 Dimensional Drawing on Reverse Side 2a2DIONICS INC. 2N2907A-2N2905A 2N2906A:2N2904A 2N2907-2N2905 2N2906-2N2904 PNP SILICON HIGH CURRENT (1.0 AMP) TRANSISTOR CHIPS DESIGNED FOR HYBRID CIRCUIT APPLICATIONS. Li . i WOE GGG Chip Thickness =6 Milg 4 Mil * Min. tise io har 5 Etonding Pads= ee * Min, aries on Botan Soni Pace ai * Diatan pc nding Pads to Edge ot Ghips nas bats Detailed Specifications on Reverse Side