NTB0101GM,115 - NXP Semiconductors

1. General description

The NTB0101 is a 1-bit, dual supply translating transceiver with auto direction sensing,

that enables bidirectional voltage level translation. It features two 1-bit input-output ports

(A and B), one output enable input (OE) and two supply pins (VCC(A) and VCC(B)). VCC(A)

can be supplied at any voltage betwee n 1.2 V and 3.6 V and V CC(B) can be supplied at any

voltage be tween 1.65 V and 5.5 V, making the device suit able for translating between any

of the low voltage nodes (1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V and 5.0 V).

Pins A and OE are referenced to VCC(A) and pin B is referenced to VCC(B). A LOW level at

pin OE causes the outputs to assume a high-impedance OFF -s tate. This device is fully

specified for partial power-down applications using IOFF. The IOFF circuitry disables the

output, prev en tin g the da m ag i ng ba ckflo w cu rr ent through the device when it is powered

down.

2. Features and benefits

Wide supply voltage range:

VCC(A): 1.2 V to 3.6 V and VCC(B): 1.65 V to 5.5 V

IOFF circuitry provides partial Power-down mode operation

Inputs accept voltages up to 5.5 V

ESD protection:

HBM JESD22-A114E Class 2 exceeds 2500 V for A port

HBM JESD22-A114E Class 3B exceeds 15000 V for B port

MM JESD22-A115-A exce ed s 200 V

CDM JESD22-C101E exceeds 1500 V

Latch-up pe rform a nc e exceeds 100 mA per JESD 78 B Class II

Multiple package options

Specified from 40 Cto+85C and 40 Cto+125C

NTB0101

Dual supply translating transceiver; auto direction sensing;

3-state

Rev. 4 — 6 August 2012 Product data sheet

Product data sheet Rev. 4 — 6 August 2012 2 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

3. Ordering information

4. Marking

[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.

5. Functional diagram

Table 1. Ordering information

Type number Package

Temperature range Name Description Version

NTB0101GW 40 Cto+125C SC-88 plastic surface-mounted package; 6 leads SOT363

NTB0101GV 40 Cto+125C TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457

NTB0101GM 40 Cto+125C XSON6 plastic extremely thin small outline package; no leads;

6 terminals; body 1 1.45 0.5 mm SOT886

NTB0101GF 40 C to +125 C XSON6 plastic extremely thin small outline package; no leads;

6 terminals; body 1 10.5 mm SOT891

NTB0101GS 40 C to +125 C XSON6 extremely thin small outline package; no leads;

6 terminals; body 1.0 1.0 0.35 mm SOT1202

Table 2. Marking

Type number Marking code[1]

NTB0101GW t1

NTB0101GV t01

NTB0101GM t1

NTB0101GF t1

NTB0101GS t1

Fig 1. Logic symbol

001aan311

CC(A)

CC(B)

Product data sheet Rev. 4 — 6 August 2012 3 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

6. Pinning information

6.1 Pinning

6.2 Pin description

7. Functional description

[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.

[2] When either VCC(A) or VCC(B) is at GND level, the device goes into Power-down mode.

Fig 2. Pin configuration SOT363

and SOT457 Fig 3. Pin configuration SOT886 Fig 4. Pin configura tion SOT891

and SOT1202

NTB0101

CC(A)

CC(B)

GND

001aan312

NTB0101

GND

001aan313

VCC(A)

VCC(B)

Transparent top view

NTB0101

GND

001aan314

VCC(A)

VCC(B)

Transparent top view

Table 3. Pin description

Symbol Pin Description

VCC(A) 1 supply voltage A

GND 2 groun d (0 V)

A 3 data input or output (referenced to V CC(A))

B 4 data input or output (referenced to V CC(B))

OE 5 output enable input (active HIGH; referenced to VCC(A))

VCC(B) 6 supply voltage B

Table 4. Function table[1]

Supply voltage Input Input/output

VCC(A) VCC(B) OE A B

1.2 V to VCC(B) 1.65 V to 5.5 V L Z Z

1.2 V to VCC(B) 1.65 V to 5.5 V H input or output output or input

GND[2] GND[2] XZZ

Product data sheet Rev. 4 — 6 August 2012 4 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

8. Limiting values

[1] The minimum input and minimum output voltage ratings may be exceeded if the input and output current ratings are observed.

[2] VCCO is the supply voltage associated with the output.

[3] VCCO + 0.5 V should not exceed 6.5 V.

[4] For SC-88 and SC-74A packages: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K.

For XSON6 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K.

9. Recommended operating conditions

[1] The A and B sides of an unused I/O pair must be held in the same state, both at VCCI or both at GND.

[2] VCC(A) must be less than or equal to VCC(B).

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions Min Max Unit

VCC(A) supply voltage A 0.5 +6.5 V

VCC(B) supply voltage B 0.5 +6.5 V

VIinput voltage [1] 0.5 +6.5 V

VOoutput voltage Active mode [1][2][3] 0.5 VCCO +0.5 V

Power-down or 3-state mode [1] 0.5 +6.5 V

IIK input clamping current VI<0V 50 - mA

IOK output clamping current VO<0V 50 - mA

IOoutput current VO=0VtoV

CCO [2] -50 mA

ICC supply current ICC(A) or ICC(B) -100mA

IGND ground current 100 - mA

Tstg storage temperature 65 +150 C

Ptot total power dissipation Tamb =40 C to +125 C[4] -250mW

Table 6. Recommended operating con ditions[1][2]

Symbol Parameter Conditions Min Max Unit

VCC(A) supply voltage A 1.2 3.6 V

VCC(B) supply voltage B 1.65 5.5 V

VIinput voltage 0 5.5 V

VOoutput voltage Power-down or 3-state mode;

VCC(A) = 1.2 V to 3.6 V;

VCC(B) = 1.65 V to 5.5 V

A port 0 3.6 V

B port 0 5.5 V

Tamb ambient temperature 40 +125 C

t/V input transition rise and fall rate VCC(A) = 1.2 V to 3.6 V;

VCC(B) =1.65Vto5.5V - 40 ns/V

Product data sheet Rev. 4 — 6 August 2012 5 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

10. Static characteristics

[1] VCCO is the supply voltage associated with the output.

[2] VCCI is the supply voltage associated with the input.

Table 7. Typical static characteristics

At recommended operating conditions; voltages are referenced to GND (ground = 0 V); Tamb = 25



Symbol Parameter Conditions Min Typ Max Unit

VOH HIGH-level

output voltage A port; VCC(A) = 1.2 V; IO=20 A-1.1-V

VOL LOW-level

output voltage A port; VCC(A) = 1.2 V; IO = 20 A-0.09-V

IIinput leakage

current OE input; VI = 0 V to 3.6 V; VCC(A) = 1.2 V to 3.6 V ;

VCC(B) =1.65Vto5.5V -- 1A

IOZ OFF-state output

current A or B port; VO=0VtoV

CCO; VCC(A) = 1. 2 V to 3.6 V;

VCC(B) = 1.65 V to 5.5 V [1] -- 1A

IOFF power-off

leakage current A port; VI or VO = 0 V to 3.6 V;

VCC(A) =0V;V

CC(B) =0Vto5.5V -- 1A

B port; VI or VO = 0 V to 5.5 V;

VCC(B) =0V;V

CC(A) =0Vto3.6V -- 1A

ICC supply current VI = 0 V or VCCI; IO = 0 A [2]

ICC(A); VCC(A) = 1.2 V; VCC(B) = 1.65 V to 5.5 V - 0.05 - A

ICC(B); VCC(A) = 1.2 V; VCC(B) = 1.65 V to 5.5 V - 3.3 - A

ICC(A) + ICC(B); VCC(A) = 1.2 V; VCC(B) =1.65Vto5.5V - 3.5 - A

CIinput

capacitance OE input; VCC(A) = 1.2 V to 3.6 V; VCC(B) =1.65Vto5.5V - 1.0 - pF

CI/O input/output

capacitance A port; VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V - 4.0 - pF

B port; VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V - 7.5 - pF

Table 8. Typical supply current

At recommended operating conditions; voltages are referenced to GND (ground = 0 V); Tamb = 25



VCC(A) VCC(B) Unit

1.8 V 2.5 V 3.3 V 5.0 V

ICC(A) ICC(B) ICC(A) ICC(B) ICC(A) ICC(B) ICC(A) ICC(B)

1.2 V101010101020101050nA

1.5 V10101010101010650nA

1.8 V10101010101010350nA

2.5 V- - 101010101040nA

3.3 V----10101010nA

Product data sheet Rev. 4 — 6 August 2012 6 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

Table 9. Static characteristics

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions 40 C to +85 C40 C to +125 CUnit

Min Max Min Max

VIH HIGH-level

input voltage A or B port and OE input [1]

VCC(A) = 1.2 V to 3.6 V;

VCC(B) = 1.65 V to 5.5 V 0.65VCCI - 0.65VCCI -V

VIL LOW-level

input voltage A or B port and OE input [1]

VCC(A) = 1.2 V to 3.6 V;

VCC(B) = 1.65 V to 5.5 V -0.35V

CCI -0.35V

CCI V

VOH HIGH-level

output voltage IO=20 A[2]

A port; VCC(A) = 1.4 V to 3.6 V VCCO  0.4 - VCCO  0.4 - V

B port; VCC(B) = 1.65 V to 5.5 V VCCO  0.4 - VCCO  0.4 - V

VOL LOW-level

output voltage IO=20A[2]

A port; VCC(A) = 1.4 V to 3.6 V - 0.4 - 0.4 V

B port; VCC(B) = 1.65 V to 5.5 V - 0.4 - 0.4 V

IIinput leakage

current OE input; VI = 0 V to 3.6 V;

VCC(A) = 1.2 V to 3.6 V;

VCC(B) =1.65Vto5.5V

-2-5A

IOZ OFF-state

output current A or B port ; VO=0VorV

CCO;

VCC(A) = 1.2 V to 3.6 V ;

VCC(B) = 1.65 V to 5.5 V

[2] -2-10 A

IOFF power-off

leakage

current

A port; VI or VO = 0 V to 3.6 V;

VCC(A) =0V;V

CC(B) =0Vto5.5V -2-10 A

B port; VI or VO = 0 V to 5.5 V;

VCC(B) =0V;V

CC(A) =0Vto3.6V -2-10 A

Product data sheet Rev. 4 — 6 August 2012 7 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

[1] VCCI is the supply voltage associated with the input.

[2] VCCO is the supply voltage associated with the output.

11. Dynamic characteristics

ICC supply current VI = 0 V or VCCI; IO = 0 A [1]

ICC(A)

OE = LOW;

VCC(A) = 1.4 V to 3.6 V;

VCC(B) = 1.65 V to 5.5 V

-3-15A

OE = HIGH;

VCC(A) = 1.4 V to 3.6 V;

VCC(B) = 1.65 V to 5.5 V

-3-20A

VCC(A) = 3.6 V; VCC(B) =0V - 2 - 15 A

VCC(A) = 0 V; VCC(B) =5.5V - 2-15 A

ICC(B)

OE = LOW;

VCC(A) = 1.4 V to 3.6 V;

VCC(B) = 1.65 V to 5.5 V

-5-15A

OE = HIGH;

VCC(A) = 1.4 V to 3.6 V;

VCC(B) = 1.65 V to 5.5 V

-5-20A

VCC(A) = 3.6 V; VCC(B) =0V - 2-15 A

VCC(A) = 0 V; VCC(B) =5.5V - 2 - 15 A

ICC(A) + ICC(B)

VCC(A) = 1.4 V to 3.6 V ;

VCC(B) =1.65Vto5.5V -8-40A

Table 9. Static characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions 40 C to +85 C40 C to +125 CUnit

Min Max Min Max

Table 10. Typical dynamic characteristics for temperature 25 C[1]

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7; for waveforms see Figure 5 and Figure 6.

Symbol Parameter Conditions VCC(B) Unit

1.8 V 2.5 V 3.3 V 5.0 V

VCC(A) = 1.2 V; Tamb = 25 C

tpd propagation delay A to B 5.9 4.8 4.4 4.2 ns

B to A 5.6 4.8 4.5 4.4 ns

ten enable time OE to A, B 0.5 0.5 0.5 0.5 s

tdis disable time OE to A; no external load [2] 6.96.96.96.9ns

OE to B; no external load [2] 9.58.68.58.0ns

OE to A 81 69 83 68 ns

OE to B 81 69 83 68 ns

Product data sheet Rev. 4 — 6 August 2012 8 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

[1] tpd is the same as tPLH and tPHL.

ten is the same as tPZL and tPZH.

tdis is the same as tPLZ and tPHZ.

tt is the same as tTHL and tTLH

[2] Delay between OE going LOW and when the outputs are actually disabled.

tttransition time A port 4.0 4.0 4.1 4.1 ns

B port 2.6 2.0 1.7 1.4 ns

tWpulse width data inputs 15 13 1 3 13 ns

fdata data rate 70 80 80 80 Mbps

Table 10. Typical dynamic characteristics for temperature 25 C[1] …continued

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7; for waveforms see Figure 5 and Figure 6.

Symbol Parameter Conditions VCC(B) Unit

1.8 V 2.5 V 3.3 V 5.0 V

Table 11. Dynamic character istics for temperature range 40 C to +85 C[1]

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7; for wave forms see Figure 5 and Figure 6.

Symbol Parameter Conditions VCC(B) Unit

1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V

Min Max Min Max Min Max Min Max

VCC(A) = 1.5 V  0.1 V

tpd propagation

delay A to B 1.4 12.9 1.2 10.1 1.1 10.0 0.8 9.9 ns

B to A 0.9 14.2 0.7 12 .0 0.4 11.7 0.3 13.7 ns

ten enable time OE to A, B - 1.0 - 1.0 - 1.0 - 1.0 s

tdis disable time OE to A; no external load [2] 1.0 11.9 1.0 11.9 1.0 11.9 1.0 11.9 ns

OE to B; no external load [2] 1.0 16.9 1.0 15.2 1.0 14.1 1.0 13.8 ns

OE to A - 320 - 260 - 260 - 280 ns

OE to B - 200 - 200 - 200 - 200 ns

tttransition

time A port 0.9 5.1 0.9 5.1 0.9 5.1 0.9 5.1 ns

B port 0.9 4.7 0.6 3.2 0.5 2.5 0.4 2.7 ns

tWpulse width data inputs 25 - 25 - 25 - 25 - ns

fdata data rate - 40 - 40 - 40 - 40 Mbps

VCC(A) = 1.8 V  0.15 V

tpd propagation

delay A to B 1.6 11.0 1.4 7.7 1.3 6.8 1.2 6.5 ns

B to A 1.5 12.0 1.3 8.4 1.0 7.6 0.9 7.1 ns

ten enable time OE to A, B - 1.0 - 1.0 - 1.0 - 1.0 s

tdis disable time OE to A; no external load [2] 1.0 11.0 1.0 11.0 1.0 11.0 1.0 11.0 ns

OE to B; no external load [2] 1.0 15.4 1.0 13.5 1.0 12.4 1.0 12.1 ns

OE to A - 260 - 230 - 230 - 230 ns

OE to B - 200 - 200 - 200 - 200 ns

tttransition

time A port 0.8 4.1 0.8 4.1 0.8 4.1 0.8 4.1 ns

B port 0.9 4.7 0.6 3.2 0.5 2.5 0.4 2.7 ns

tWpulse width data inputs 20 - 17 - 17 - 17 - ns

fdata data rate - 49 - 60 - 60 - 60 Mbps

Product data sheet Rev. 4 — 6 August 2012 9 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

[1] tpd is the same as tPLH and tPHL.

ten is the same as tPZL and tPZH.

tdis is the same as tPLZ and tPHZ.

tt is the same as tTHL and tTLH.

[2] Delay between OE going LOW and when the outputs are actually disabled.

VCC(A) = 2.5 V  0.2 V

tpd propagation

delay A to B - - 1.1 6.3 1.0 5.2 0.9 4.7 ns

B to A - - 1.2 6.6 1.1 5.1 0.9 4.4 ns

ten enable time OE to A, B - - - 1.0 - 1.0 - 1.0 s

tdis disable time OE to A; no external load [2] - - 1.0 9.2 1.0 9.2 1.0 9.2 ns

OE to B; no external load [2] - - 1.0 11.9 1.0 10.7 1.0 10.2 ns

OE to A - - - 200 - 200 - 200 ns

OE to B - - - 200 - 200 - 200 ns

tttransition

time A port - - 0.7 3.0 0.7 3.0 0.7 3.0 ns

B port - - 0.7 3.2 0.5 2.5 0.4 2.7 ns

tWpulse width data inputs - - 12 - 10 - 10 - ns

fdata data rate - - - 85 - 100 - 100 Mbps

VCC(A) = 3.3 V  0.3 V

tpd propagation

delay A to B - - - - 0.9 4.7 0.8 4.0 ns

B to A - - - - 1.0 4.9 0.9 3.8 ns

ten enable time OE to A, B - - - - - 1.0 - 1.0 s

tdis disable time OE to A; no external load [2] - - - - 1.0 9.2 1.0 9.2 ns

OE to B; no external load [2] - - - - 1.0 10.1 1.0 9.6 ns

OE to A - - - - - 260 - 260 ns

OE to B - - - - - 200 - 200 ns

tttransition

time A port - - - - 0.7 2.5 0.7 2.5 ns

B port - - - - 0.5 2.5 0.4 2.7 ns

tWpulse width data inputs - - - - 10 - 10 - ns

fdata data rate - - - - - 100 - 100 Mbps

Table 11. Dynamic character istics for temperature range 40 C to +85 C[1] …continued

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7; for wave forms see Figure 5 and Figure 6.

Symbol Parameter Conditions VCC(B) Unit

1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V

Min Max Min Max Min Max Min Max

Product data sheet Rev. 4 — 6 August 2012 10 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

Table 12. Dynamic characteristics for temperature range 40 C to +125 C[1]

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7; for wave forms see Figure 5 and Figure 6.

Symbol Parameter Conditions VCC(B) Unit

1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V

Min Max Min Max Min Max Min Max

VCC(A) = 1.5 V  0.1 V

tpd propagation

delay A to B 1.4 15.9 1.2 13.1 1.1 13.0 0.8 12 .9 ns

B to A 0.9 17.2 0.7 15 .0 0.4 14.7 0.3 16 .7 ns

ten enable time OE to A, B - 1.0 - 1.0 - 1.0 - 1.0 s

tdis disable time OE to A; no external load [2] 1.0 12.5 1.0 12.5 1.0 12.5 1.0 12.5 ns

OE to B; no external load [2] 1.0 18.1 1.0 16.2 1.0 14.9 1.0 14.6 ns

OE to A - 340 - 280 - 280 - 300 ns

OE to B - 220 - 220 - 220 - 220 ns

tttransition

time A port 0.9 7.1 0.9 7.1 0.9 7.1 0.9 7.1 ns

B port 0.9 6.5 0.6 5.2 0.5 4.8 0.4 4.7 ns

tWpulse width data inputs 25 - 25 - 25 - 25 - ns

fdata data rate - 40 - 40 - 40 - 40 Mbps

VCC(A) = 1.8 V  0.15 V

tpd propagation

delay A to B 1.6 14.0 1.4 10.7 1.3 9.8 1.2 9.5 ns

B to A 1.5 15.0 1.3 11.4 1.0 10.6 0.9 10.1 ns

ten enable time OE to A, B - 1.0 - 1.0 - 1.0 - 1.0 s

tdis disable time OE to A; no external load [2] 1.0 11.5 1.0 11.5 1.0 11.5 1.0 11.5 ns

OE to B; no external load [2] 1.0 16.5 1.0 14.5 1.0 13.3 1.0 12.7 ns

OE to A - 280 - 250 - 250 - 250 ns

OE to B - 220 - 220 - 220 - 220 ns

tttransition

time A port 0.8 6.2 0.8 6.1 0.8 6.1 0.8 6.1 ns

B port 0.9 5.8 0.6 5.2 0.5 4.8 0.4 4.7 ns

tWpulse width data inputs 22 - 19 - 19 - 19 - ns

fdata data rate - 45 - 55 - 55 - 55 Mbps

VCC(A) = 2.5 V  0.2 V

tpd propagation

delay A to B - - 1.1 9.3 1.0 8.2 0.9 7.7 ns

B to A - - 1.2 9.6 1.1 8.1 0.9 7.4 ns

ten enable time OE to A, B - - - 1.0 - 1.0 - 1.0 s

tdis disable time OE to A; no external load [2] - - 1.0 9.6 1.0 9.6 1.0 9.6 ns

OE to B; no external load [2] - - 1.0 12.6 1.0 11.4 1.0 10.8 ns

OE to A - - - 220 - 220 - 220 ns

OE to B - - - 220 - 220 - 220 ns

tttransition

time A port - - 0.7 5.0 0.7 5.0 0.7 5.0 ns

B port - - 0.7 4.6 0.5 4.8 0.4 4.7 ns

tWpulse width data inputs; - - 14 - 13 - 10 - ns

fdata data rate - - - 75 - 80 - 100 Mbps

Product data sheet Rev. 4 — 6 August 2012 11 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

[1] tpd is the same as tPLH and tPHL.

ten is the same as tPZL and tPZH.

tdis is the same as tPLZ and tPHZ.

tt is the same as tTHL and tTLH.

[2] Delay between OE going LOW and when the outputs are actually disabled.

VCC(A) = 3.3 V  0.3 V

tpd propagation

delay A to B - - - - 0.9 7.7 0.8 7.0 ns

B to A - - - - 1.0 7.9 0.9 6.8 ns

ten enable time OE to A, B - - - - - 1.0 - 1.0 s

tdis disable time OE to A; no external load [2] - - - - 1.0 9.5 1.0 9.5 ns

OE to B; no external load [2] - - - - 1.0 10.7 1.0 9.6 ns

OE to A - - - - - 280 - 280 ns

OE to B - - - - - 220 - 220 ns

tttransition

time A port - - - - 0.7 4.5 0.7 4.5 ns

B port - - - - 0.5 4.1 0.4 4.7 ns

tWpulse width data inputs - - - - 10 - 10 - ns

fdata data rate - - - - - 100 - 100 Mbps

Table 12. Dynamic characteristics for temperature range 40 C to +125 C[1] …continued

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7; for wave forms see Figure 5 and Figure 6.

Symbol Parameter Conditions VCC(B) Unit

1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V

Min Max Min Max Min Max Min Max

Product data sheet Rev. 4 — 6 August 2012 12 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

[1] CPD is used to determine the dynamic power dissipation (PD in W).

PD=C

PD VCC2fiN+(CLVCC2fo) where:

fi= input frequency in MHz;

fo= output frequency in MHz;

CL= load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

(CLVCC2fo) = sum of the outputs.

[2] fi = 10 MHz; VI=GNDtoV

CC; tr = tf = 1 ns; CL = 0 pF; RL =  .

12. Waveforms

Table 13. Typical power dissipation capacitance

Voltages are referenced to GND (ground = 0 V).[1][2]

Symbol Parameter Conditions VCC(A) Unit

1.2 V 1.2 V 1.5 V 1.8 V 2.5 V 2.5 V 3.3 V

VCC(B)

1.8 V 5.0 V 1.8 V 1.8 V 2.5 V 5.0 V 3.3 V

5.0 V

Tamb = 25 C

CPD power

dissipation

capacitance

outputs enabled; OE = VCC(A)

Aport: (direction A to B) 5555555pF

Aport: (direction B to A) 8888888pF

B port: (direction A to B) 18 18 18 18 18 18 18 pF

B port: (direction B to A) 13 16 12 12 12 12 13 pF

outputs disabled; OE = GND

A port: (direction A to B) 0.12 0.12 0.04 0.05 0.08 0.08 0.07 pF

A port: (direction B to A) 0.01 0.01 0.01 0.01 0.01 0.01 0.01 p F

B port: (direction A to B) 0.01 0.01 0.01 0.01 0.01 0.01 0.01 pF

B port: (direction B to A) 0.07 0.09 0.07 0.07 0.05 0.09 0.09 p F

Measurement points are given in Table 14.

VOL and VOH are typical output voltage levels that occur with the output load.

Fig 5. Data input (A, B) to data output (B, A) propagation delay times

001aan315

A, B input

B, A output

tPLH

tPHL

GND

VOH

VOL tTHL

10 %

90 %

tTLH

Product data sheet Rev. 4 — 6 August 2012 13 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

[1] VCCI is the supply voltage associated with the input and VCCO is the supply voltage associated with the output.

Measurement points are given in Table 14.

VOL and VOH are typical output voltage levels that occur with the output load.

Fig 6. Enable and disable times

001aal919

tPLZ

tPHZ

outputs

disabled outputs

enabled

outputs

enabled

output

LOW-to-OFF

OFF-to-LOW

output

HIGH-to-OFF

OFF-to-HIGH

OE input

VOH

VCCO

GND

VOL

GND

tPZL

tPZH

Table 14. Measurement points[1]

Supply voltage Input Output

VCCO VMVMVXVY

1.2 V 0.5VCCI 0.5VCCO VOL + 0.1 V VOH  0.1 V

1.5 V  0.1 V 0.5VCCI 0.5VCCO VOL + 0.1 V VOH  0.1 V

1.8 V  0.15 V 0.5VCCI 0.5VCCO VOL + 0.15 V VOH  0.15 V

2.5 V  0.2 V 0.5VCCI 0.5VCCO VOL + 0.15 V VOH  0.15 V

3.3 V  0.3 V 0.5VCCI 0.5VCCO VOL + 0.3 V VOH  0.3 V

5.0 V  0.5 V 0.5VCCI 0.5VCCO VOL + 0.3 V VOH  0.3 V

Product data sheet Rev. 4 — 6 August 2012 14 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

[1] VCCI is the supply voltage associated with the input.

[2] For measuring data rate, pulse width, propagation delay and output rise and fall measurements, RL = 1 M; for measuring enable and

disable times, RL = 50 k.

[3] VCCO is the supply voltage associated with the output.

Test data is given in Table 15.

All input pulses are supplied by generators having the following characteristics: PRR  10 MHz; ZO = 50 ; dV/dt  1.0 V/ns.

RL = Load resistance.

CL = Load capacitance including jig and probe capacitance.

VEXT = External voltage for measuring switching times.

Fig 7. Test circuit for measuring switching times

VMVM

10 %

90 %

0 V

negative

pulse

positive

pulse

0 V

VMVM

90 %

10 %

001aal920

VEXT

VCC

VIVO

DUT

CLRL

Table 15. Test data

Supply voltage Input Load VEXT

VCC(A) VCC(B) VI[1] t/V CLRL[2] tPLH, tPHL tPZH, tPHZ tPZL, tPLZ[3]

1.2 V to 3.6 V 1.65 V to 5.5 V VCCI  1.0ns/V 15pF 50k, 1 Mopen open 2VCCO

Product data sheet Rev. 4 — 6 August 2012 15 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

13. Application information

13.1 Applications

Voltage level-translation applications. The NTB0101 can be used to interface between

devices or systems operating at different supply voltages. See Figure 8 for a typical

operating circuit using the NTB0101.

Fig 8. Typical operating circuit

001aan316

OE NTB0101 SYSTEM

A DATA

GND B

VCC(A) VCC(B)

SYSTEM

CONTROLLER

DATA

1.8 V

1.8 V 3.3 V

0.1 μF 0.1 μF

3.3 V

Product data sheet Rev. 4 — 6 August 2012 16 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

13.2 Architecture

The architecture of the NTB0101 is shown in Figure 9. The device does no t require an

extra input signal to control the dir ection of dat a flow fr om A to B or from B to A. In a st a tic

state, the output drivers of the NTB0101 can maintain a defined output level, but the

output architecture is designed to be weak, so that they can be overdriven by an external

driver when dat a on the bus st arts flowing in the opposite direction. Th e output of one-shot

circuits detect rising or falling edges on the A or B ports. During a rising edge, the

one-shot circuits turn on the PMOS transistors (T1, T3) for a short duration, acceler ating

the LOW-to-HIGH transition. Similarly, during a falling edge, the one-shot circuits turn on

the NMOS transistors (T2, T4) for a short duration, accelerating the HIGH-to-LOW

transition. During output transitions the typical output impedance is 70  at VCCO = 1.2 V

to 1.8 V, 50  at VCCO = 1.8 V to 3.3 V and 40  at VCCO = 3.3 V to 5.0 V.

Fig 9. Architecture of NTB0101 I/O cell

001aal921

ONE

SHOT

ONE

SHOT

ONE

SHOT

ONE

SHOT B

VCC(B)

VCC(A)

4 kΩ

Product data sheet Rev. 4 — 6 August 2012 17 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

13.3 Input driver requirements

For correct operation, the device driving the data I/Os of the NTB0101 must have a

minimum drive capability of 2 mA See Figure 10 for a plot of typical input current versus

input voltage.

13.4 Power-up

During operation VCC(A) must never be higher than VCC(B), however during power- up

VCC(A)  VCC(B) does not damage the device, so ei ther power supply can be ramped up

first. There is no special power-up sequencing required. The NTB0101 includes circuitry

that disables all output ports when either VCC(A) or VCC(B) is switched off.

13.5 Enable and disable

An output enable input (OE) is used to disable the device. Setting OE = LOW causes all

I/Os to assume the high-impedance OFF-state. The disable time (tdis with no external

load) indicates the delay between when OE goes LOW and when outputs actually

become disabled. The enable time (ten) indicates the amount of time the user must allow

for one one-shot circuitry to become operational after OE is taken HIGH. To ensure the

high-impedance OFF-state during power-up or power-down, pin OE should be tied to

GND through a pull-down resisto r, the minimum value of the resisto r is determin ed b y the

current-sourcing capability of the driver.

13.6 Pull-up or pull-down resistors on I/O lines

As mentioned previously the NTB0101 is designed with low static drive strength to drive

capacitive loads of up to 70 pF. To avoid output contention issues, any pull-up or

pull-down resistors used must be above 50 k. For this reason the NTB0101 is not

recommended for use in open drain driver applications such as 1-Wire or I2C-bus. For

these applicat ion s , the NT S01 0 1 leve l tra ns lat or is reco mm e nde d.

VT: input threshold voltage of the NTB0101 (typically VCCI / 2).

VD: supply voltage of the external driver.

Fig 10. Typical input current versus inp ut voltage graph

001aal922

/4 kΩ

−(V

− V

)/4 kΩ

Product data sheet Rev. 4 — 6 August 2012 18 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

14. Package outline

Fig 11. Package outline SOT363 (SC-88)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT363 SC-88

wBM

pin 1

index A

detail X

vMA

0 1 2 mm

scale

132

456

Plastic surface-mounted package; 6 leads SOT363

UNIT A1

max bpcDEe1HELpQywv

mm 0.1 0.30

0.20 2.2

1.8

0.25

0.10 1.35

1.15 0.65

1.3 2.2

2.0 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.25

0.15

1.1

0.8

04-11-08

06-03-16

Product data sheet Rev. 4 — 6 August 2012 19 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

Fig 12. Package outline SOT457 (TSOP6)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT457 SC-74

wBM

pin 1

index A

detail X

vMA

scale

132

0 1 2 mm

Plastic surface-mounted package (TSOP6); 6 leads SOT457

UNIT A1bpcDEHELpQywv

mm 0.1

0.013 0.40

0.25 3.1

2.7

0.26

0.10 1.7

1.3

0.95 3.0

2.5 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.6

0.2 0.33

0.23

1.1

0.9

05-11-07

06-03-16

Product data sheet Rev. 4 — 6 August 2012 20 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

Fig 13. Package outline SOT886 (XSON6)

References

Outline

version European

projection Issue date

IEC JEDEC JEITA

SOT886 MO-252

sot886_po

04-07-22

12-01-05

Unit

mm max

nom

min

0.5 0.04 1.50

1.45

1.40

1.05

1.00

0.95

0.35

0.30

0.27

0.40

0.35

0.32

0.6

A(1)

Dimensions (mm are the original dimensions)

Notes

1. Including plating thickness.

2. Can be visible in some manufacturing processes.

XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SOT886

A1b

0.25

0.20

0.17

DEee

0.5

terminal 1

index area

0 1 2 mm

scale

(2)

Product data sheet Rev. 4 — 6 August 2012 21 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

Fig 14. Package outline SOT891 (XSON6)

terminal 1

index area

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT891

05-04-06

07-05-15

XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

mm 0.20

0.12 1.05

0.95 0.35

0.27

max b E

1.05

0.95

Dee

0.40

0.32

0.350.55

max

0.5 0.04

6×

(1)

4×

(1)

Note

1. Can be visible in some manufacturing processes.

Product data sheet Rev. 4 — 6 August 2012 22 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

Fig 15. Package outline SOT1202 (XSON6)

References

Outline

version European

projection Issue date

IEC JEDEC JEITA

SOT1202

sot1202_po

10-04-02

10-04-06

Unit

mm max

nom

min

0.35 0.04 1.05

1.00

0.95

1.05

1.00

0.95 0.55 0.35 0.40

0.35

0.32

A(1)

Dimensions

Note

1. Including plating thickness.

2. Visible depending upon used manufacturing technology.

XSON6: extremely thin small outline package; no leads;

6 terminals; body 1.0 x 1.0 x 0.35 mm SOT1202

A1b

0.20

0.15

0.12

DEee

0.35

0.30

0.27

0 0.5 1 mm

scale

terminal 1

index area

(4×)(2)

e1e1

123

6 5 4

(6×)(2)

Product data sheet Rev. 4 — 6 August 2012 23 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

15. Abbreviations

16. Revision history

Table 16. Abbreviations

Acronym Description

CDM Charged Device Mo del

DUT Device Under Test

ESD ElectroStatic Discharge

HBM Human Body Model

MM Machine Model

NMOS N-type Metal Oxide Semiconductor

PMOS P-type Metal Oxide Semiconductor

PRR Pulse Repetition Rate

Table 17. Revision history

Document ID Release date Data sheet status Change notice Supersedes

NTB0101 v.4 20120806 Product data sheet - NTB0101 v.3

Modifications: •Package outline drawing of SOT886 (Figure 13) modified.

NTB0101 v.3 20111110 Product da ta sheet - NTB0101 v.2

Modifications: •Legal pages updated.

NTB0101 v.2 20110505 Product data sheet - NTB0101 v.1

NTB0101 v.1 20101230 Product data sheet - -

Product data sheet Rev. 4 — 6 August 2012 24 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

17. Legal information

17.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

17.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specificatio n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond tho se described in the

Product data sheet.

17.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Se miconductors takes no

responsibility for the content in this document if provided by an inf ormation

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability t owards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors product s are not designed,

authorized or warranted to be suitable for use in life support, lif e-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environme ntal

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications and ther efore such inclu sion and/or use is at the cu stomer’s own

risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applicati ons or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly ob jects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by cust omer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or t he grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data fro m the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specif ication.

Product [short] dat a sheet Producti on This document contains the product specification.

Product data sheet Rev. 4 — 6 August 2012 25 of 26

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for aut omotive use. It i s neither qua lif ied nor test ed

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in au tomotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting f rom customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Translations — A non-English (translated) version of a docume nt is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

17.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

18. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors NTB0101

Dual supply translating transceiver; auto direction sensing; 3-state

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 6 August 2012

Document identifier: NTB0101

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

19. Contents

1 General description. . . . . . . . . . . . . . . . . . . . . . 1

2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2

6 Pinning information. . . . . . . . . . . . . . . . . . . . . . 3

6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Functional description . . . . . . . . . . . . . . . . . . . 3

8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

9 Recommended operating conditions. . . . . . . . 4

10 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5

11 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7

12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Application information. . . . . . . . . . . . . . . . . . 15

13.1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . 15

13.2 Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . 16

13.3 Input driver requirements . . . . . . . . . . . . . . . . 17

13.4 Power-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

13.5 Enable and disable. . . . . . . . . . . . . . . . . . . . . 17

13.6 Pull-up or pull-down resistors on I/O lines . . . 17

14 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 18

15 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 23

16 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 23

17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 24

17.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 24

17.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

17.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 24

17.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 25

18 Contact information. . . . . . . . . . . . . . . . . . . . . 25

19 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26