Te 29 te Signal Transistors 2N5172, MPS5172, PN5172, 2N6076 Silicon Transistors T0.92 TO-98 The GE/RCA 2N, MPS, PN5172 are NPN and 2N6076 is a PNP silicon transistors designed for genera! purpose appli- cations. The planar, passivated construction assures excel- lent device stability and fife. This high performance and high value Is made possible by advanced manufacturing tech- niques, epoxy encapsulation and utilization of full line beta MAXIMUM RATINGS, Absolute-Maximum Values: COLLEGTOR TO EMITTER VOLTAGE (Vogo) -..0-eceeeececeeeee COLLECTOR TO BASE VOLTAGE (Vogg) +. ...esecesecces cece ee EMITTER TO BASE VOLTAGE (Vgpo). ++... seeseececeessceeeees CONTINUOUS COLLECTOR CURRENT (Ig) (Note 1) .......... 0-0 TOTAL POWER DISSIPATION (Ta < 25C) (Py)(Note2)..........6. OPERATING TEMPERATURE (Ty) 0.00... 0. cece eee ueeuaeeees STORAGE TEMPERATURE (Tyqq)...--e sc ceecceeesuceeeceerecs LEAD TEMPERATURE, 1/16 + 1/92 (1.58mm + 0.8mm) from case for 10 sec. max. Te ec cece cee cece cece e ner eeeee +260C NOTES: distribution. Significant savings may be realized by design- ing equipment utilizing these full line distribution type tran- sistors. PNP values are negative; observe proper polarity, These types are supplied in JEDEC TO-92 package (MPS5172, PNS172) and in JEDEC TO-98 package (2N5172, 2N6076). Devices in TO-98 package are supplied with and without seating flange (see Dimensional Outline). 1, Determined from power limitations due to saturation voltage at this current. 2. Derate 3.6mW/C increase in ambient temperature above 25C File Number 2061 43 rememe + oo G E SOLID STATE OL DE fF 3875081, 0017940 a i Signal Transistors T 2 G- is 2N5172, MPS5172, PN5172, 2N6076 ELECTRICAL CHARACTERISTICS, At Ambient Temperature (Ta) = 25C Untess Otherwise Specified LIMITS CHARACTERISTICS SYMBOL MIN. MAX. UNITS Collector Cutoff Current (Vog = 25V) Icgo = 100 nA (Vop = 25V, Ta = 100C) lego - 10 pA (Vop = 25V, base-emitter junction short-circuited) Ices - 100 Emitter Cutoff Current nA (Yep = 5V)5172 lepo ~ 100 (Veg = 8V)--6076 _leBo - 100 DC Forward Current Transter Ratio (Voge = 10 V, ig = 10 mA) hee (1) 100 600 = Collector Emitter Breakdown Voltage (Ico = 10 mA) Viprceo 25 - Collector Saturation Voltage (Ig = 10mA, 1p = 1 mA) Voetsat) = 0.25 Vv Base Saturation Voltage (Ig = 10 mA, Ig = 1 mA) VBe(sat) = 0.8 Base Emitter Voltage (Voge = 10V, Io = 10mA) _Vee 0.5 1.2 Small-Signal Forward Current Transfer Ratio Woe = 10V, lo = 10 mA, f = 1 kHz) Ne 100 750 - Output Capacitance, Common Base (Vog = 10V, Ie = 0, f = 1 kHz) Cop 1 13 pF Gain Bandwidth Product (Von = 5 V, Ig = 2mA) tr 200 Typ. MHz (1) Typically a minimum of 50% of the distribution will have heg > 150 at stated conditians. Note: Polarities are absolute. TERMINAL CONNECTIONS TERMINAL CONNECTIONS TQ-92 Package TO-98 Package Lead 1 - Emitter Lead 1 - Emitter Lead 2 - Base Lead 2 - Collector Lead 3 - Collector Lead 3 - Base 44