AH102A-G - TriQuint - Datasheet.Live

TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com June 2012

AH102A

Medium Power, High Linearity Amplifier

Product Features

• 350 – 3000 MHz

• +46 dBm Output IP3

• 14.5 dB Gain

• +27 dBm P1dB

• MTTF > 1000 Years

• Internally Matched

• Single +9 V Supply

• Lead-free/Green/RoHS-compliant

SOT-89 Package

Applications

• Mobile Infrastructure

• W-LAN / ISM / WLL / RFID

• Broadband Wireless

• PowerAmp Predistortion Circuitry

Product Description

The AH102A is a medium power gain block that offers

excellent dynamic range in a low-cost surface mount

package. The combination of a single supply voltage and

an internally matched device makes it ideal for both narrow

and broadband applications.

Superior thermal design allows the product to achieve +46

dBm IP3 performances at a mounting temperature of +85

°C with an associated MTTF of greater than 1000 years.

The AH102A is available in the environmentally-friendly

lead-free/green/RoHS-compliant SOT-89 package.

The broadband amplifier uses a high reliability GaAs

MESFET technology and is targeted for applications where

high linearity is required. It is well suited for various

current and next generation wireless technologies such as

GPRS, GSM, CDMA, and W-CDMA. In addition, the

AH102A will work for other applications within the 250 to

3000 MHz frequency range such as broadband wireless.

Functional Diagram

RF IN GND

RF OUT

GND

Function Pin No.

Input 1

Ground 2

Output / Bias 3

Ground 4

Specifications (1)

Parameter Units

Min Typ Max

Operational Bandwidth MHz 350 3000

Test Frequency MHz 800

Gain dB 12.5 14.4

Output IP3 (2) dBm +43 +46

Output P1dB dBm +27

Noise Figure dB 3.1

Test Frequency MHz 1900

Gain dB 11.5 13

Output IP3 (2) dBm +42 +44.5

Output P1dB dBm +27

Operating Current Range mA 200 230

Supply Voltage V +9

1. Test conditions unless otherwise noted: T = 25 ºC, Vdd = +9 V in a 50 ohm test fixture.

2. OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 10 MHz. The

suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 rule.

Absolute Maximum Rating

Parameter Rating

Storage Temperature -55 to +150

DC Voltage +11 V

RF Input Power (continuous) +17 dBm

Junction Temperature 160

Thermal Resistance, Rth 25 °C / W

Operation of this device above any of these parameters may cause permanent damage.

Typical Performance (3)

Parameter Units

Typical

Frequency MHz 900 1900 2140

Gain dB 14.5 13.6 13.5

Input Return Loss dB 22 16 19

Output Return Loss dB 30 15 15

Output P1dB dBm +27 +27 +27

Output IP3 (2) dBm +46 +45 +44

IS-95A Channel Power

45 dBc ACPR

dBm +21 +20

W-CDMA Channel Power

45 dBc ACLR

dBm +18.2

Noise Figure dB 3.1 3.8 3.7

Supply Current mA 200

Supply Voltage V +9

3. Parameters reflect performance in a tuned application circuit.

Ordering Information

Part No. Description

AH102A-G Medium Power, High Linearity Amplifier

(lead-free/green/RoHS-compliant SOT-89 package)

AH102A-PCB900 900 MHz Fully Assembled Evaluation Board

AH102A-PCB2000 1.7-2.2 GHz Fully Assembled Evaluation Board

Standard T/R size = 1000 pieces on a 7” reel.

TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com June 2012

AH102A

Medium Power, High Linearity Amplifier

Typical Device Data

VDS = +9 V, IDS = 200 mA, T = 25 °C, unmatched 50 ohm system

S-Parameters

Vd = +9V, Temp = 25°C

-30

-20

-10

0 500 1000 1500 2000 2500 3000

Frequency (MHz)

S11

S22

S21

Output IP3 vs. Frequency

8 dBm / tone, 10 MHz spacing, Temp = 25° C

500 1000 1500 2000 2500 3000

Frequency (MHz)

+7 V

+8 V

+9 V

P1dB vs. Frequency

500 1000 1500 2000 2500 3000

Frequency (MHz)

+7 V

+8 V

+9 V

S-Parameters (VDS = +9 V, IDS = 200 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads)

Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)

50 -10.52 -67.44 16.70 161.42 -19.60 15.17 -13.87 -71.59

100 -14.38 -71.97 15.99 164.33 -19.33 4.56 -20.59 -73.74

200 -15.96 -79.59 15.67 161.23 -19.25 -3.24 -31.69 -37.96

400 -14.26 -97.77 15.34 149.69 -19.46 -13.66 -24.05 41.02

600 -12.32 -113.84 15.05 136.98 -19.68 -22.39 -19.28 34.21

800 -10.79 -127.15 14.64 125.04 -20.00 -29.57 -16.57 23.81

1000 -9.66 -138.79 14.33 113.77 -20.41 -37.29 -14.96 12.82

1200 -8.75 -149.08 13.99 102.45 -20.76 -43.79 -13.80 1.56

1400 -8.08 -157.98 13.67 91.00 -21.26 -50.64 -12.94 -9.52

1600 -7.37 -165.53 13.45 80.21 -21.75 -56.57 -12.17 -21.95

1800 -6.87 -171.92 13.24 69.79 -22.32 -63.25 -11.48 -34.63

2000 -6.37 -178.50 13.02 58.73 -22.88 -69.25 -11.05 -47.68

2200 -6.00 174.94 12.78 47.41 -23.60 -76.47 -10.74 -61.29

2400 -5.61 169.08 12.59 36.08 -24.44 -82.56 -10.46 -74.90

2600 -5.12 162.18 12.42 23.91 -25.41 -88.72 -10.05 -88.98

2800 -4.66 156.21 12.14 11.75 -26.51 -93.74 -9.83 -103.94

3000 -4.43 152.94 11.96 5.65 -27.12 -96.59 -9.68 -110.63

Device S-parameters are available for download off of the website at: http://www.wj.com

Application Circuit PC Board Layout

Circuit Board Material: .014” Getek (εr=4.2), four layer, 1 oz copper

Microstrip line details: width = .026”, spacing = .026”

TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com June 2012

AH102A

Medium Power, High Linearity Amplifier

Application Circuit: 900 MHz (AH102A-PCB900)

Typical RF Performance at 25°

°°

°C

ID=

100 pF

ID=

3.3 pF

ID=

100 pF

ID=

1e4 pF

ID=

100 pF

ID=

6.8 nH

ID=

22 nH

ID=

0 Ohm

NET="AH102A"

0805

+9 V

Notes:

1. The amplifier should be connected directly to a +9 V regulator; no dropping resistor is required.

2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier.

3. R1 is used as a placeholder for a different application circuit. It can be removed from the circuit.

S11 vs. Frequency

-30

-25

-20

-15

-10

-5

700 800 900 1000

Frequency (MHz)

S 1 1 ( d B )

-40 °C +25 °C +85 °C

S21 vs. Frequency

700 800 900 1000

Frequency (MHz)

S 2 1 ( d B )

-40 °C +25 °C +85 °C

S22 vs. Frequency

-30

-25

-20

-15

-10

-5

700 800 900 1000

Frequency (MHz)

S 2 2 ( d B )

-40 °C +25 °C +85 °C

OIP3 vs. Temperature

900 MHz, 8 dBm / tone

-40 -20 0 20 40 60 80

Temperature (°C)

+7 V +8 V +9 V

OIP3 vs. Output Power

frequency = 900 MHz, Temp = 25°C

0 4 8 12 16

Output Power (dBm)

+7 V +8 V +9 V

ACPR vs. Channel Power

900 MHz, IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW

-80

-70

-60

-50

-40

14 16 18 20 22

Channel Power (dBm)

A C P R (d B c )

+25 °C

-40 °C

+85 °C

Noise Figure vs. Frequency

Temp = 25 °C

700 800 900 1000

Frequency (MHz)

N o is e F ig u re (d B )

Frequency 900 MHz

Gain 14.5 dBm

Input Return Loss 22 dB

Output Return Loss 30 dB

Output P1dB +27 dBm

Output IP3 +46 dBm

IS-95A Ch. Power

@ -45 dBc ACPR

+21 dBm

Noise Figure 3.1 dB

Supply Voltage +9 V

Supply Current 200 mA

TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com June 2012

AH102A

Medium Power, High Linearity Amplifier

Application Circuit: 1900 / 2140 MHz (AH102A-PCB2000)

Typical RF Performance at 25°

°°

°C

ID=

56 pF

ID=

1.5 pF

ID=

56 pF

ID=

1e4 pF

ID=

56 pF

ID=

1.8 nH

ID=

15 nH

ID=

0 Ohm

NET="AH102A"

0805

+9 V

Notes:

1. The amplifier should be connected directly to a +9 V regulator; no dropping resistor is required.

2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier.

3. R1 is used as a placeholder for a different application circuit. It can be removed from the circuit.

S11 vs. Frequency

-25

-20

-15

-10

-5

1.7 1.8 1.9 2 2.1 2.2

Frequency (MHz)

S 1 1 ( d B )

+25 °C

-40 °C

+85 °C

S21 vs. Frequency

1.7 1.8 1.9 2 2.1 2.2

Frequency (MHz)

S 2 1 ( d B )

+25 °C

-40 °C

+85 °C

S22 vs. Frequency

-25

-20

-15

-10

-5

1.7 1.8 1.9 2 2.1 2.2

Frequency (MHz)

S 2 2 (d B )

+25 °C

-40 °C

+85 °C

OIP3 vs. Output Power

frequency = 1900 MHz

6 7 8 9 10 11 12

Output Power (dBm)

-40C +25C +85C

OIP3 vs. Output Power

frequency = 2140 MHz

6 7 8 9 10 11

Output Power (dBm)

-40C +25C +85C

P1dB vs. Frequency

1.7 1.8 1.9 2 2.1 2.2

Frequency (GHz)

P 1 d B (d B m )

+25 °C

-40 °C

+85 °C

ACPR vs. Channel Power

1900 MHz, IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW

-70

-60

-50

-40

14 16 18 20 22

Channel Power (dBm)

A C P R (d B c )

+25 °C

-40 °C

+85 °C

ACLR vs. Channel Power

2140 MHz, 3GPP W-CDMA, Test Model 1 +64 DPCH, ±5 MHz offset

-60

-55

-50

-45

-40

14 15 16 17 18 19

Channel Power (dBm)

A C L R (d B c )

+25 °C

-40 °C

+85 °C

Noise Figure vs. Frequency

1.7 1.8 1.9 2.0 2.1 2.2

Frequency (GHz)

N o is e F ig u re (d B )

+25 °C

-40 °C

+85 °C

Frequency 1900 2140 Units

Gain 13.6 13.5 dB

Input Return Loss 16 19 dB

Output Return Loss 15 15 dB

Output P1dB +27 +27 dBm

Output IP3 +45 +44 dBm

IS-95A Ch. Power

45 dBc ACPR

+20 dBm

W-CDMA Ch. Power

45 dBc ACLR

+18.2 dBm

Noise Figure 3.8 3.7 dB

Supply Voltage +9 V

Supply Current 200 mA

TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com June 2012

AH102A

Medium Power, High Linearity Amplifier

AH102A-G (Green / Lead-free SOT-89 Package) Mechanical Information

This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded

(maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.

Outline Drawing

Land Pattern

Product Marking

The AH102A-G will be marked with a

“102AG” designator and an alphanumeric lot

code.

Tape and reel specifications for this part are

located on the website in the “Application

Notes” section.

MSL / ESD Rating

ESD Rating: Class 1C

Value: Passes ≥ 1000V min.

Test: Human Body Model (HBM)

Standard: JEDEC Standard JESD22-A114

ESD Rating: Class IV

Value: Passes ≥ 1000V min.

Test: Charged Device Model (CDM)

Standard: JEDEC Standard JESD22-C101

MSL Rating: Level 1 at +260 °C convection reflow

Standard: JEDEC Standard J-STD-020

Mounting Config. Notes

1. Ground / thermal vias are critical for the proper

performance of this device. Vias should use a .35mm

(#80 / .0135”) diameter drill and have a final plated thru

diameter of .25 mm (.010”).

2. Add as much copper as possible to inner and outer layers

near the part to ensure optimal thermal performance.

3. Mounting screws can be added near the part to fasten the

board to a heatsink. Ensure that the ground / thermal via

region contact the heatsink.

4. Do not put solder mask on the backside of the PC board in

the region where the board contacts the heatsink.

5. RF trace width depends upon the PC board material and

construction.

6. Use 1 oz. Copper minimum.

7. All dimensions are in millimeters (inches). Angles are in

degrees.

XXXX-X

102AG