JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
K596 Si N-CHANNEL JUNCTION FET
FEATURES
Power dissipation
P
CM: 0.1W(Tamb=25℃)
Gate Current
I G: 10mA
Drain current
I D: 1mA
Drain-Source voltage
BVGDO: -20 V
Operating and storage junction temperature range
T
J,Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Gate-Drain breakdown Voltage BVGDO IG= -100μA -20 V
Gate-Source cut-off Voltage V
GS(off) VDS= 5V , I
D=1μA -0.6 -1.5 V
Drain Current I
DSS VDS= 5 V , V
GS=0 100 800 μA
Forward Transfer Admittance |YFS| VDS= 5V , VGS=0, f=1KHz 0.4 1.2 mS
Input Capacitance Ciss VDS=5V, VGS=0, f=1MHz 3.5 pF
Output Capacitance CRSS VDS= 5 V, V
GS=0
f = 1MHz 0.65 pF
I
DSS Classification
Classification A B C D E
IDSS (µA) 100-170 150-240 210-350 320-480 440-800
TO-92S
1.SOURCE
2.GATE
3.DRAIN
123