JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
K596 Si N-CHANNEL JUNCTION FET
FEATURES
Power dissipation
P
CM: 0.1W（Tamb=25℃）
Gate Current
I G: 10mA
Drain current
I D: 1mA
Drain-Source voltage
BVGDO: -20 V
Operating and storage junction temperature range
T
J，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Gate-Drain breakdown Voltage BVGDO IG= -100μA -20 V
Gate-Source cut-off Voltage V
GS(off) VDS= 5V , I
D=1μA -0.6 -1.5 V
Drain Current I
DSS VDS= 5 V , V
GS=0 100 800 μA
Forward Transfer Admittance |YFS| VDS= 5V , VGS=0, f=1KHz 0.4 1.2 ｍＳ
Input Capacitance Ciss VDS=5V, VGS=0, f=1MHz 3.5 pF
Output Capacitance CRSS VDS= 5 V, V
GS=0
f = 1MHz 0.65 pF
I
DSS Classification
Classification A B C D E
IDSS (µA) 100-170 150-240 210-350 320-480 440-800
ＴＯ－９２Ｓ
1.SOURCE
2.GATE
3.DRAIN
123
D
E
A
A1
c
L
D1
b
e
e1
TO-92S PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
c
D
D1
E
e
e1
L
θ
Min
1.240
0.660
0.380
0.360
3.850
2.970
3.010
2.440
15.100
Max
1.620
0.860
0.550
0.510
4.150
3.270
3.310
2.640
15.500
Min
0.056
0.026
0.015
0.014
0.152
0.117
0.119
0.096
0.594
Max
0.064
0.034
0.022
0.020
0.163
0.129
0.130
0.104
0.610
Dimensions In Millimeters Dimensions In Inches
0.050TYP
45°TYP
1.270TYP
45°TYP
θ
