Ordering number:ENN544G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1011/2SC2344 High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Package Dimensions unit:mm 2010C [2SA1011/2SC2344] 10.2 3.6 4.5 5.1 18.0 15.1 6.3 2.7 1.3 14.0 5.6 1.2 0.8 1 2 1 : Base 2 : Collector 3 : Emitter SANYO : TO220AB 3 2.7 ( ) : 2SA1011 0.4 Specifications 2.55 2.55 Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)180 V Collector-to-Emitter Voltage VCEO VEBO (-)160 V (-)6 V IC (-)1.5 A Emitter-to-Base Voltage Collector Current Collector Current (Pulse) ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg (-)3 A 25 W Tc=25C 150 C -55 to +150 C Electrical Characteristics at Ta = 25C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(-)120V, IE=0 (-)10 A Emitter Cutoff Current IEBO (-)10 A DC Current Gain hFE fT VEB=(-)4V, IC=0 VCE=(-)5V, IC=(-)300mA Gain-Bandwidth Product 60* VCE=(-)10V, IC=(-)50mA Output Capacitance Cob VCB=(-)10V, f=1MHz Base-to-Emitter Voltage VBE VCE=(-)5V, IC=(-)10mA * : The 2SA1011/2SC2344 are classified by 300mA hFE as follows : Rank D E hFE 60 to 120 100 to 200 200* 100 MHz (30) pF 23 pF (-)1.5 V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70502TN (KT)/71598HA (KT)/30196TS APS 8-3288/D251MH/3207AT/2265MY, TS No.544-1/4 2SA1011/2SC2344 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage Ratings Conditions VCE(sat) min typ IC=(-)500mA, IB=(-)50mA max Unit (-0.5) V 0.3 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(-)1mA, IE=0 (-)180 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO IE=(-)10mA, IC=0 (-)160 V Emitter-to-Base Breakdown Voltage Turn-ON Time Fall Time Storage Time (-)6 ton See specified Test Circuit tf See specified Test Circuit tstg See specified Test Circuit V (0.29) 0.15 (0.19) 0.48 (0.48) 0.81 s s s Switching Time Test Circuit OUTPUT IB1 1 INPUT PW=20s 51 IB2 VR 200 1F 40 1F 20V --2V 10IB1=--10IB2=IC=0.5A (For PNP, the polarity is reversed.) IC -- VCE --1.0 IC -- VCE 1.0 2SA1011 8 Collector Current, IC - A --0.6 Collector Current, IC - A A --8m --7mA --6mA --0.8 2SC2344 --5mA --4mA --0.4 --3mA --2mA mA 0.8 7mA 6mA 5mA 0.6 4mA 0.4 3mA 2mA 0.2 --0.2 1mA --1mA 0 0 IB=0 --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE - V 0 10 20 30 40 2SC2344 VCE=5V --2.0 --0.2 --0.4 --0.6 --0.8 C --1.2 --1.4 ITR02943 0 0 0.2 0.4 0.6 C Ta= --25 C 75 0.8 25 25 C --1.0 Base-to-Emitter Voltage, VBE - V 1.2 0.4 Ta= -- --0.4 25 5 C --0.8 C 75 C --1.2 1.6 5 C --1.6 12 Collector Current, IC - A 2.0 12 Collector Current, IC - A ITR02942 IC -- VBE 2.4 2SA1011 VCE=--5V 0 0 50 Collector-to-Emitter Voltage, VCE - V ITR02941 IC -- VBE --2.4 IB=0 0 --50 0.8 1.0 Base-to-Emitter Voltage, VBE - V 1.2 1.4 ITR02944 No.544-2/4 2SA1011/2SC2344 hFE -- IC 1000 7 5 2SA1011 VCE=--5V 3 DC Current Gain, hFE DC Current Gain, hFE 25C Ta=--25C 3 2 10 7 5 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC - A 1.0 5 1 2SA101 3 2 10 7 5 7 0.01 2 3 5 7 0.1 2 3 Collector Current, IC - A 2 10 7 5 (For PNP, minus sign is omitted.) 2 1.0 5 7 1.0 ITR02947 2 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V 5 7 100 ITR02948 ICP=3A 3 Collector Current, IC - A s 100 ms 10 s 1m tion era Op DC IC=1.5A 1.0 2 1.0 7 5 1 7 5 3 2 0.1 101 4 34 SC2 2 7 5 3 2 3 2 0.01 5 2SA10 11 2SC2 344 3 2 7 5 3 ITR02946 Cob -- VCB 3 3 0.1 2 ASO 7 5 2SA 7 1.0 5 IC / IB=10 3 2 5 7 VCE(sat) -- IC 10 3 100 (For PNP, minus sign is omitted.) 3 2 2 5 2 7 0.1 f=1MHz 344 3 0.001 5 3 2SC2 5 3 Collector Current, IC - A VCE=10V 7 2 5 2 100 7 0.01 ITR02945 Output Capacitance, Cob - pF Gain-Bandwidth Product, fT - MHz 3 fT -- IC 3 Collector-to-Emitter Saturation Voltage, VCE (sat) - V 2 10 7 5 3 2 Ta=--25C 3 2 7 --0.01 25C 100 7 5 3 1.0 125C 2 125C 100 7 5 2SC2344 VCE=5V 75C 3 75C 2 hFE -- IC 1000 7 5 (For PNP, minus sign is omitted.) 2 3 5 7 0.1 2 3 5 Collector Current, IC - A 7 1.0 2 (For PNP, minus sign is omitted.) 3 ITR02949 0.01 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector-to-Emitter Voltage, VCE - V ITR02950 No.544-3/4 2SA1011/2SC2344 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2002. Specifications and information herein are subject to change without notice. PS No.544-4/4