© 2012 IXYS CORPORATION, All Rights Reserved DS99761C(04/12)
High Voltage
Power MOSFET
Features
zInternational Standard Package
zMolding Epoxies Weet UL 94 V-0
Flammability Classification
zFast Intrinsic Diode
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zHigh Voltage Power Supplies
zCapacitor Discharge
zPulse Circuits
IXTH1N250 VDSS = 2500V
ID25 = 1.5A
RDS(on) ≤≤
≤≤
≤ 40ΩΩ
ΩΩ
Ω
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 2500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ2500 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 1.5 A
IDM TC= 25°C, Pulse Width Limited by TJM 6A
PDTC= 25°C 250 W
TJ- 55 ... +150 °C
TJM 150 °C
Tstg - 55 ... +150 °C
TL1.6mm (0.062 in.) From Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque 1.13 / 10 Nm/lb.in.
Weight 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 2500 V
VGS(th) VDS = VGS, ID = 250μA 2.0 4.0 V
IGSS VGS = ±20V, VDS = 0V ±100 nA
IDSS VDS = 0.8 • VDSS, VGS = 0V 25 μA
TJ = 125°C 25 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 40 Ω
N-Channel Enhancement Mode
Fast Intrinsic Diode
G = Gate D = Drain
S = Source Tab = Drain
TO-247
G
S
D Tab
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH1N250
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 50V, ID = 0.5A, Note 1 1.0 1.8 mS
Ciss 1660 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 77 pF
Crss 23 pF
td(on) 69 ns
tr 25 ns
td(off) 132 ns
tf 39 ns
Qg(on) 41 nC
Qgs VGS = 10V, VDS = 600V, ID = 0.5A 8 nC
Qgd 16 nC
RthJC 0.50 °C/W
RthCS 0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 1.5 A
ISM Repetitive, Pulse Width Limited by TJM 6 A
VSD IF = 1A, VGS = 0V, Note 1 1.5 V
trr IF = 1A, -di/dt = 100A/μs, VR = 200V 2.5 μs
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 1A
RG = 5Ω (External)
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
e
∅ P
TO-247 (IXTH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
*Additional provisions for lead to lead voltage isolation are required at VDS > 1200V.
© 2012 IXYS CORPORATION, All Rights Reserved
IXTH1N250
Fi g . 1. Outp u t C h ar a cter i sti cs @ T
J
= @ 25ºC
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 5 10 15 20 25 30 35 40 45
VDS - V olts
ID - Amperes
V
GS
= 10V
4V
5V
Fi g . 2. Ou tp u t C h aracteri stics @ T
J
= 125ºC
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 102030405060708090
VDS - Volt s
ID - Amperes
V
GS
= 10V
4V
5V
Fig. 4. R
DS(on)
No r mali z ed to I
D
= 0.5A Val u e vs.
Junction T em perature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
RDS(on) - Normali zed
V
GS
= 10V
I
D
= 1A
I
D
= 0. 5A
Fig. 3. R
DS(on)
No r mali z ed to I
D
= 0.5A Val u e vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
ID - A mp e res
RDS(on) - Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 6. Inp u t Admittan ce
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0
VGS - Vol ts
ID - Amperes
T
J
= 125ºC - 40ºC 25ºC
Fi g . 5. Maximu m Dr ai n Cu r r en t vs.
Case Temper at u r e
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
ID - Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH1N250
Fig. 7. Transconductance
0
0.5
1
1.5
2
2.5
3
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
0
0.5
1
1.5
2
2.5
3
0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
SD
- Vo lts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 9. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45
Q
G
- NanoCoulombs
V
GS
- Vol ts
V
DS
= 600V
I
D
= 500mA
I
G
= 10mA
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Vo lts
Capacitance - PicoFarads
f
= 1MHz
Ciss
Crss
Coss
Fig. 11. Forward-Bias Safe Operating Area
@ T
C
= 25ºC
0.01
0.1
1
10
100 1,000 10,000
V
DS
- Vo lts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100ms
1ms
100µs
R
DS(on)
Limit
10ms
DC
25µs
Fig. 12. Forward-Bias Safe Operating Area
@ T
C
= 75ºC
0.01
0.1
1
10
100 1,000 10,000
V
DS
- Vo lts
I
D
- Amperes
T
J
= 150ºC
T
C
= 75ºC
Single Pulse
100ms
1ms
100µs
R
DS(on)
Limit
10ms
DC
25µs
© 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: T_1N250 (5P)10-25-10-D
IXTH1N250
Fig. 1 3. Maximu m Tran s i en t Ther mal Imped ance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pul se Width - Seconds
Z
(th)JC
- º C / W
