3004 00050014 - HONEYWELL - Datasheet.Live

PHB110NQ08T

N-channel TrenchMOS standard level FET

Rev. 02 — 12 October 2009 Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plasti c

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industria l applications only.

1.2 Features and benefits

Low conduction losses due to low

on-state resistance

Suitable for standard level gate drive

sources

1.3 Applications

DC-to-DC convertors

General industrial applications

Motors, lamps and soleno ids

Uninterruptible power supplies

1.4 Quick reference data

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤175 °C - - 75 V

IDdrain current Tmb =25°C; V

GS =10V;

see Figure 1 and 3--75A

Ptot total power

dissipation Tmb = 25 °C; see Figure 2 - - 230 W

Dynamic characteristics

QGD gate-drain charge VGS =10V; I

D=25A;

VDS =60V; T

j=25°C;

see Figure 11

- 48.2 - nC

Sta tic chara cteristics

RDSon drain-source

on-state resistance VGS =10V; I

D=25A;

Tj= 25 °C; see Figure 9 and 10 -7.79mΩ

PHB110NQ08T_2

Product data sheet Rev. 02 — 12 Octob er 2009 2 of 12

Nexperia PHB110NQ08T

N-channel TrenchMOS st andard level FET

2. Pinning information

[1] It is not possible to make a connection to pin 2.

3. Ordering information

4. Limiting values

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1G gate

SOT404 (D2PAK)

2D drain [1]

3S source

mb D mounting base; connected to

drain

bb076

Table 3. Ordering information

Type number Package

Name Description Version

PHB110NQ08T D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one

lead cropped) SOT404

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤175 °C - 75 V

VDGR drain-gate voltage Tj≥25 °C; Tj≤175 °C; RGS =20kΩ-75V

VGS gate-source voltage -20 20 V

IDdrain current VGS =10V; T

mb = 100 °C; see Figure 1 -75A

VGS =10V; T

mb =25°C; see Figure 1 and 3-75A

IDM peak drain current tp≤10 µs; pulsed; Tmb =25°C; see Figure 3 -440A

Ptot total power dissipation Tmb =25°C; see Figure 2 -230W

Tstg storage temperature -55 175 °C

Tjjunction temperature -55 175 °C

Source-drain diode

ISsource current Tmb =25°C - 75 A

ISM peak source current tp≤10 µs; pulsed; Tmb =25°C - 440 A

Avalanche ruggedness

EDS(AL)S non-repetitive

drain-source avalanche

energy

VGS =10V; T

j(init) =25°C; I

D=75A; V

sup ≤75 V;

unclamped; tp= 0.15 ms; RGS =50Ω

-560mJ

PHB110NQ08T_2

Product data sheet Rev. 02 — 12 Octob er 2009 3 of 12

Nexperia PHB110NQ08T

N-channel TrenchMOS st andard level FET

Fig 1. Normalized continuous drain current as a

function of mounting base temperature Fig 2. Normalized total power dissipation as a

function of mounting base temperature

Fig 3. Safe operating area; continuous and peak drain curren ts as a function of drain-source voltage

03ap74

120

0 50 100 150 200

Tmb (°C)

Ider

(%)

Tmb (°C)

0 20015050 100

03aa16

120

Pder

(%)

03nb44

(V)

1 10

(A)

δ =

DSon

= V

= 10 us

100 ms

10 ms

1 ms

100 us

D.C.

PHB110NQ08T_2

Product data sheet Rev. 02 — 12 Octob er 2009 4 of 12

Nexperia PHB110NQ08T

N-channel TrenchMOS st andard level FET

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance from

junction to mounting base see Figure 4 - - 0.65 K/W

Rth(j-a) thermal resistance from

junction to ambient mo unted on printed-circuit board;

minimum footprint; vertical in still air -50-K/W

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

03ap75

tp (s)

10−4110−1

10−310−2

10−1

Zth(j-mb)

(K/W)

10−2

single pulse

δ = 0.5

0.2

0.1

0.02

0.05

δ =

PHB110NQ08T_2

Product data sheet Rev. 02 — 12 Octob er 2009 5 of 12

Nexperia PHB110NQ08T

N-channel TrenchMOS st andard level FET

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source

breakdown voltage ID=250µA; V

GS =0V; T

j=-55°C 70 - - V

ID=250µA; V

GS =0V; T

j=25°C 75 - - V

VGS(th) gate-source threshold

voltage ID=1mA; V

DS = VGS; Tj= 175 °C;

see Figure 8 1- - V

ID=1mA; V

DS = VGS; Tj=-55°C;

see Figure 8 --4.4V

ID=1mA; V

DS = VGS; Tj=25°C;

see Figure 8 234V

IDSS drain leakage current VDS =75V; V

GS =0V; T

j=25°C --10µA

VDS =75V; V

GS =0V; T

j= 175 °C - - 500 µA

IGSS gate leakage current VGS =20V; V

DS =0V; T

j= 25 °C - 2 100 nA

VGS =-20V; V

DS =0V; T

j= 25 °C - 2 100 nA

RDSon drain-source on-state

resistance VGS =10V; I

D=25A; T

j= 175 °C;

see Figure 9 and 10 - 16.2 18.9 mΩ

VGS =10V; I

D=25A; T

j=25°C;

see Figure 9 and 10 -7.79mΩ

Dynamic characteristics

QG(tot) total gate charge ID=25A; V

DS =60V; V

GS =10V;

Tj=25°C; see Figure 11 - 113.1 - nC

QGS gate-source charge - 18.5 - nC

QGD gate-drain charge - 48.2 - nC

Ciss input capacitance VDS =25V; V

GS = 0 V; f = 1 MHz;

Tj=25°C; see Figure 12 - 4860 - pF

Coss output capacitance - 840 - pF

Crss reverse transfer

capacitance - 475 - pF

td(on) turn-on delay time VDS =30V; R

L=1.2Ω; VGS =10V;

RG(ext) =5.6Ω; Tj=25°C -35-ns

trrise time - 107 - ns

td(off) turn-off delay time - 183 - ns

tffall time - 100 - ns

Source-drain diode

VSD source-drain voltage IS=25A; V

GS =0V; T

j=25°C;

see Figure 13 - 0.82 1.2 V

trr reverse recovery time IS=20A; dI

S/dt = -100 A/µs; VGS =0V;

VDS =25V; T

j=25°C -75-ns

Qrrecovered charge - 270 - nC

PHB110NQ08T_2

Product data sheet Rev. 02 — 12 Octob er 2009 6 of 12

Nexperia PHB110NQ08T

N-channel TrenchMOS st andard level FET

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values Fig 6. Transfer characteristics: drain current as a

function of gate-source vo ltage; typical values

Fig 7. Sub-threshold drain current as a function of

gate-source voltage Fig 8. Gate-source threshold voltage as a function of

junction temperature

03ap77

160

240

01234

VDS (V)

(A)

Tj = 25 °C

VGS = 4.5 V

5 V

5.5 V

7 V

6 V

10 V

03ap79

0246

VGS (V)

(A)

VDS > ID x RDSon

Tj = 175 °C25 °C

03aa35

VGS (V)

0642

10−4

10−5

10−2

10−3

10−1

(A)

10−6

min typ max

Tj (°C)

−60 180120060

03aa32

VGS(th)

(V)

max

typ

min

PHB110NQ08T_2

Product data sheet Rev. 02 — 12 Octob er 2009 7 of 12

Nexperia PHB110NQ08T

N-channel TrenchMOS st andard level FET

Fig 9. Drain-source on-state resistance as a function

of drain current; typical values F ig 10. Normalized drain-source on-state resistance

factor as a functio n of junction temperature

Fig 11. Gate-source voltage as a function of gate

charge; typical values Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

03ap78

0 80 160 240

ID (A)

RDSon

(mΩ)

VGS = 5.5 VTj = 25 °C6 V

10 V

7 V

Tj (°C)

−60 180120060

03nb25

0.8

1.6

2.4

03ap82

0 40 80 120

QG (nC)

VGS

(V)

ID = 25 A

Tj = 25 °C

VDD = 60 V

14 V

03ap81

102

103

104

10−1 1 10 102

VDS (V)

(pF)

Ciss

Coss

Crss

PHB110NQ08T_2

Product data sheet Rev. 02 — 12 Octob er 2009 8 of 12

Nexperia PHB110NQ08T

N-channel TrenchMOS st andard level FET

Fig 13. So urce current as a function of source-drain voltage; typical values

03ap80

0 0.3 0.6 0.9 1.2

VSD (V)

(A)

Tj = 25 °C

175 °C

VGS = 0 V

PHB110NQ08T_2

Product data sheet Rev. 02 — 12 Octob er 2009 9 of 12

Nexperia PHB110NQ08T

N-channel TrenchMOS st andard level FET

7. Package outline

Fig 14. Package outline SOT404 (D2PAK)

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

A1D1

max. EeL

pHDQc

2.54 2.60

2.20

15.80

14.80

2.90

2.10

11 1.60

1.20

10.30

9.70

4.50

4.10

1.40

1.27

0.85

0.60

0.64

0.46

DIMENSIONS (mm are the original dimensions)

SOT404

0 2.5 5 mm

scale

Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT40

e e

mounting

base

05-02-11

06-03-16

PHB110NQ08T_2

Product data sheet Rev. 02 — 12 Octob er 2009 10 of 12

Nexperia PHB110NQ08T

N-channel TrenchMOS st andard level FET

8. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PHB110NQ08T_2 20091012 Product data sheet - PHP_PHB110NQ08T-01

Modifications: •The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate .

•Typenumber PHB110NQ08T separated from data sheet PHP_PHB110NQ08T -01.

PHP_PHB110NQ08T-01

(9397 750 12927) 20040329 Product data sheet - -

PHB110NQ08T_2

Product data sheet Rev. 02 — 12 Octob er 2009 11 of 12

Nexperia PHB110NQ08T

N-channel TrenchMOS st andard level FET

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nexperia.com.

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warrant ies as to t he accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full da ta sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

9.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, Nexperia does not give any representations or

warranties, expressed or impli ed, as to the accuracy or completeness of such

information and shall have no liability for th e co nsequences of use of such

information.

Right to make changes — Nexperia reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — Nexperia products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where f ailure or

malfunction of a Nexperia product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. Nexperia accepts no liability for inclusion and/or use of

Nexperia products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Rati ngs System of I EC 60134) may cause perman ent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other co nditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may af fect device reliability.

Terms and conditions of sale — Nexperia products are sold

subject to the general terms and conditions of commercial sale, as publi shed

at http://www.nexperia.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by Nexperia. In case of

any inconsistency or conflict between inf ormation in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the it em(s) described herein may

be subject to export control regulations. Export might require a prior

authorization from national authorities.

9.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respective ow ners.

10. Contact information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Document status [1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objecti ve specificat ion for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Nexperia PHB110NQ08T

N-channel TrenchMOS st andard level FET

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .11

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

10 Contact information. . . . . . . . . . . . . . . . . . . . . .11

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release:

12 October 2009