DMN2026UVT N-CHANNEL ENHANCEMENT MODE MOSFET V(BR)DSS Features and Benefits ID RDS(ON) Max TA = +25C 24m @ VGS = 4.5V 20V 6.2A 32m @ VGS = 2.5V This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low Input Capacitance Low On-Resistance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Mechanical Data Description and Applications DC-DC Converters Power Management Functions Backlighting Case: TSOT26 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.013 grams (Approximate) D TSOT26 D 1 6 D D 2 5 D G 3 4 S Top View G Gate Protection Diode S Equivalent Circuit Top View Pin Configuration Ordering Information (Note 4) Part Number DMN2026UVT-7 DMN2026UVT-13 Notes: Case TSOT26 TSOT26 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information N5V Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMN2026UVT Document number: DS37960 Rev. 1 - 2 Mar 3 YM ADVANCE INFORMATION NEW PRODUCT Product Summary N5V = Product Type Marking Code YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) 2016 D Apr 4 May 5 2017 E Jun 6 1 of 6 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D May 2015 (c) Diodes Incorporated DMN2026UVT ADVANCE INFORMATION NEW PRODUCT Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 4.5V Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Steady State Symbol VDSS VGSS ID IS IDM TA = +25C Value 20 10 6.2 2 20 Unit V V A A A Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Symbol PD TA = +25C Steady state t<10s TA = +25C Steady state t<10s Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) RJA PD RJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RJC TJ, TSTG Value 1.15 107 76 1.75 75 50 16 -55 to +150 Unit W C/W W C/W C Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 -- -- -- -- -- -- 1 10 A VGS(TH) Static Drain-Source On-Resistance RDS(ON) VSD 0.4 -- -- -- -- 18 21 0.7 1.5 24 32 1.2 Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR -- -- -- -- -- -- -- -- -- -- -- -- -- --- 887 91 37 191 10 18.4 1.3 1.8 53 66 619 197 119 96 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: V A V m V Test Condition VGS = 0V, ID = 250A VDS = 20V, VGS = 0V VGS = 8V, VDS = 0V VDS = VGS, ID = 250A VGS = 4.5V, ID = 6.2A VGS = 2.5V, ID = 5.2A VGS = 0V, IS = 1.3A pF VDS = 10V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 10V, ID = 6.5A ns VDS = 10V, VGS = 4.5V, RG = 6, RL = 10, ID = 1A ns nC IF = 4A, di/dt = 100A/s IF = 4A, di/dt = 100A/s 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN2026UVT Document number: DS37960 Rev. 1 - 2 2 of 6 www.diodes.com May 2015 (c) Diodes Incorporated DMN2026UVT 20 20.0 VGS=1.8V 18.0 VGS=2.5V 12.0 ID, DRAIN CURRENT (A) VGS=4.0V VGS=1.5V 10.0 VGS=4.5V 8.0 6.0 14 12 10 8 6 4 TA=125 2.0 2 TA=150 0.0 0 VGS=1.2V 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 3 0.05 TA=85 TA=25 TA=-55 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 3 0.1 VGS=1.5V 0.045 0.04 0.035 VGS=1.8V 0.03 0.025 VGS=2.5V 0.02 0.015 VGS=4.5V 0.01 0.005 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ID, DRAIN CURRENT (A) 14.0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 16 VGS=3.5V 4.0 0 0.09 0.08 0.07 0.06 0.05 0.04 0.03 ID=4A 0.02 0.01 0 0 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 1 0.03 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 8 1.8 VGS= 4.5V TA=125 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION NEW PRODUCT 16.0 VDS= 5V 18 TA=150 0.025 TA=85 0.02 TA=25 0.015 TA=-55 0.01 0.005 1.6 VGS=2.5V, ID=5.5A 1.4 1.2 VGS=4.5V, ID=6.5A 1 0.8 0.6 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMN2026UVT Document number: DS37960 Rev. 1 - 2 3 of 6 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 6. On-Resistance Variation with Temperature May 2015 (c) Diodes Incorporated 1.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.05 0.045 0.04 0.035 VGS=2.5V, ID=5.5A 0.03 0.025 0.02 VGS=4.5V, ID=6.5A 0.015 0.01 0.005 1.1 1 0.9 0.8 ID=1mA 0.7 0.6 ID=250A 0.5 0.4 0.3 0.2 0.1 0 0 -50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 8. Gate Threshold Variation vs. Temperature -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 7. On-Resistance Variation with Temperature -25 10000 30 CT, JUNCTION CAPACITANCE (pF) f=1MHz 25 IS, SOURCE CURRENT (A) 20 15 VGS=0V, TA=85 VGS=0V, TA=125 10 VGS=0V, TA=150 5 VGS=0V, TA=25 Ciss 1000 Coss 100 Crss VGS=0V, TA=-55 10 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.5 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 20 100 8 RDS(ON) Limited 4 ID, DRAIN CURRENT (A) 6 VGS (V) ADVANCE INFORMATION NEW PRODUCT DMN2026UVT VDS=10V, ID=6.5A 2 10 1 0 2 4 6 10 12 14 Qg (nC) Figure 11. Gate Charge DMN2026UVT Document number: DS37960 Rev. 1 - 2 8 16 18 20 4 of 6 www.diodes.com PW =1ms PW =10ms PW =100ms PW =1s 0.1 0.01 0 PW =100s TJ(MAX)=150 PW =10s TC=25 Single Pulse DUT on 1*MRP board VGS=10V 0.1 DC 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 May 2015 (c) Diodes Incorporated DMN2026UVT r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION NEW PRODUCT 1 D=0.5 D=0.3 D=0.9 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RJA(t)=r(t) * RJA RJA=105/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D e1 E E1 L2 c 4x1 e L 6x b A A2 A1 DMN2026UVT Document number: DS37960 Rev. 1 - 2 5 of 6 www.diodes.com TSOT26 Dim Min Max Typ A -- 1.00 -- A1 0.01 0.10 -- A2 0.84 0.90 -- D -- -- 2.90 E -- -- 2.80 E1 -- -- 1.60 b 0.30 0.45 -- c 0.12 0.20 -- e -- -- 0.95 e1 -- -- 1.90 L 0.30 0.50 -- L2 -- -- 0.25 0 8 4 1 4 12 -- All Dimensions in mm May 2015 (c) Diodes Incorporated DMN2026UVT Suggested Pad Layout ADVANCE INFORMATION NEW PRODUCT Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y (6x) X (6x) IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright (c) 2015, Diodes Incorporated www.diodes.com DMN2026UVT Document number: DS37960 Rev. 1 - 2 6 of 6 www.diodes.com May 2015 (c) Diodes Incorporated