1
BSC110N15NS5
Rev.2.4,2018-05-23Final Data Sheet
1
2
3
4
5
6
7
8
4
32
1
56
78
SuperSO8
8 D
7 D
6 D
5 D
S 1
S 2
S 3
G 4
MOSFET
OptiMOSTM5Power-Transistor,150V
Features
•N-channel,normallevel
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•150°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplication
•Idealforhigh-frequencyswitchingandsynchronousrectification
Table1KeyPerformanceParameters
Parameter Value Unit
VDS 150 V
RDS(on),max 11 mΩ
ID76 A
QOSS 78 nC
QG (0V..10V) 28 nC
QSW 11.5 nC
Type/OrderingCode Package Marking RelatedLinks
BSC110N15NS5 PG-TDSON-8 110N15NS -
1) J-STD20 and JESD22
2
OptiMOSTM5Power-Transistor,150V
BSC110N15NS5
Rev.2.4,2018-05-23Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3
OptiMOSTM5Power-Transistor,150V
BSC110N15NS5
Rev.2.4,2018-05-23Final Data Sheet
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current ID-
-
-
-
76
48 ATC=25°C
TC=100°C
Pulsed drain current1) ID,pulse - - 304 A TC=25°C
Avalanche energy, single pulse2) EAS - - 100 mJ ID=50A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot - - 125 W TC=25°C
Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category;
DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - 0.6 1 K/W -
,
6 cm2 cooling area3) RthJA - - 50 K/W -
3Electricalcharacteristics
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 150 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 3 3.8 4.6 V VDS=VGS,ID=91µA
Zero gate voltage drain current IDSS -
-
0.1
10
1
100 µA VDS=120V,VGS=0V,Tj=25°C
VDS=120V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
9
10
11
12.7 mΩVGS=10V,ID=38A,
VGS=8V,ID=19A,
Gate resistance4) RG- 0.9 1.35 Ω-
Transconductance gfs 29 58 - S |VDS|>2|ID|RDS(on)max,ID=38A
1) See Diagram 3 for more detailed information
2) See Diagram 13 for more detailed information
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
4) Defined by design. Not subject to production test
4
OptiMOSTM5Power-Transistor,150V
BSC110N15NS5
Rev.2.4,2018-05-23Final Data Sheet
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance1) Ciss - 2080 2770 pF VGS=0V,VDS=75V,f=1MHz
Output capacitance1) Coss - 515 685 pF VGS=0V,VDS=75V,f=1MHz
Reverse transfer capacitance1) Crss - 13 23 pF VGS=0V,VDS=75V,f=1MHz
Turn-on delay time td(on) - 10.3 - ns VDD=75V,VGS=10V,ID=38A,
RG,ext=3Ω
Rise time tr- 3.3 - ns VDD=75V,VGS=10V,ID=38A,
RG,ext=3Ω
Turn-off delay time td(off) - 14.5 - ns VDD=75V,VGS=10V,ID=38A,
RG,ext=3Ω
Fall time tf- 2.9 - ns VDD=75V,VGS=10V,ID=38A,
RG,ext=3Ω
Table6Gatechargecharacteristics2)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 12 - nC VDD=75V,ID=38A,VGS=0to10V
Gate to drain charge1) Qgd - 5.8 9 nC VDD=75V,ID=38A,VGS=0to10V
Switching charge Qsw - 11.5 - nC VDD=75V,ID=38A,VGS=0to10V
Gate charge total1) Qg- 28 35 nC VDD=75V,ID=38A,VGS=0to10V
Gate plateau voltage Vplateau - 5.8 - V VDD=75V,ID=38A,VGS=0to10V
Output charge1) Qoss - 78 103 nC VDD=75V,VGS=0V
Table7Reversediode
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode continous forward current IS- - 76 A TC=25°C
Diode pulse current IS,pulse - - 304 A TC=25°C
Diode forward voltage VSD - 0.88 1.2 V VGS=0V,IF=38A,Tj=25°C
Reverse recovery time1) trr - 45 90 ns VR=75V,IF=38A,diF/dt=100A/µs
Reverse recovery charge1) Qrr - 46 92 nC VR=75V,IF=38A,diF/dt=100A/µs
1) Defined by design. Not subject to production test
2) See ″Gate charge waveforms″ for parameter definition
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OptiMOSTM5Power-Transistor,150V
BSC110N15NS5
Rev.2.4,2018-05-23Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 50 100 150 200
0
20
40
60
80
100
120
140
Ptot=f(TC)
Diagram2:Draincurrent
TC[°C]
ID[A]
0 50 100 150 200
0
20
40
60
80
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
10-1 100101102103
10-2
10-1
100
101
102
103
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1 100
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tp);parameter:D=tp/T
6
OptiMOSTM5Power-Transistor,150V
BSC110N15NS5
Rev.2.4,2018-05-23Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
012345
0
50
100
150
8 V10 V
7 V
6.5 V
6 V
5.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on)[mΩ]
0 40 80 120 160
0
5
10
15
20
25
30
35
5.5 V
6 V 6.5 V
7 V
8 V
10 V
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A]
0246810
0
20
40
60
80
100
120
140
25 °C
150 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
ID[A]
gfs[S]
0 20 40 60 80 100
0
20
40
60
80
100
gfs=f(ID);Tj=25°C
7
OptiMOSTM5Power-Transistor,150V
BSC110N15NS5
Rev.2.4,2018-05-23Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[mΩ]
-60 -20 20 60 100 140
0
5
10
15
20
25
max
typ
RDS(on)=f(Tj);ID=38A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th)[V]
-60 -20 20 60 100 140
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
910 µA
91 µA
VGS(th)=f(Tj);VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
VDS[V]
C[pF]
0 20 40 60 80 100
100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.5 1.0 1.5 2.0
100
101
102
103
25 °C
150 °C
25°C max
150°C max
IF=f(VSD);parameter:Tj
8
OptiMOSTM5Power-Transistor,150V
BSC110N15NS5
Rev.2.4,2018-05-23Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAS[A]
100101102103
100
101
102
25 °C
100 °C
150 °C
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
Diagram14:Typ.gatecharge
Qgate[nC]
VGS[V]
0 5 10 15 20 25 30
0
2
4
6
8
10
30 V
75 V
120 V
VGS=f(Qgate);ID=38Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-60 -20 20 60 100 140 180
135
140
145
150
155
160
165
170
VBR(DSS)=f(Tj);ID=1mA
Diagram Gate charge waveforms
9
OptiMOSTM5Power-Transistor,150V
BSC110N15NS5
Rev.2.4,2018-05-23Final Data Sheet
5PackageOutlines
Figure1OutlinePG-TDSON-8,dimensionsinmm
10
OptiMOSTM5Power-Transistor,150V
BSC110N15NS5
Rev.2.4,2018-05-23Final Data Sheet
RevisionHistory
BSC110N15NS5
Revision:2018-05-23,Rev.2.4
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2015-05-26 Release of final version
2.1 2015-06-09 Update Avalanche Energy
2.2 2017-09-18 Update Ron max at Vgs=8V
2.3 2018-02-21 Update labels Diagram 9
2.4 2018-05-23 Update date
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