TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
1
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●8 A Continuous On-State Current
●80 A Surge-Current
●Glass Passivated Wafer
●400 V to 800 V Off-State Voltage
●Max IGT of 20 mA
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.
2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate
linearly to zero at 110°C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage
TIC116D
TIC116M
TIC116S
TIC116N
VDRM
400
600
700
800
V
Repetitive peak reverse voltage
TIC116D
TIC116M
TIC116S
TIC116N
VRRM
400
600
700
800
V
Continuous on-state current at (or below) 70°C case temperature (see Note 1) IT(RMS) 8 A
Average on-state current (180° conduction angle) at (or below) 70°C case temperature
(see Note 2) IT(AV) 5 A
Surge on-state current at (or below) 25°C case temperature (see Note 3) ITM 80 A
Peak positive gate current (pulse width ≤ 300 µs) IGM 3 A
Peak gate power dissipation (pulse width ≤ 300 µs) PGM 5 W
Average gate power dissipation (see Note 4) PG(AV) 1 W
Operating case temperature range TC-40 to +110 °C
Storage temperature range Tstg -40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds TL230 °C
K
A
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
1
2
3
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
2
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTE 5: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IDRM
Repetitive peak
off-state current VD = rated VDRM TC = 110°C 2mA
IRRM
Repetitive peak
reverse current VR= rated VRRM IG = 0 TC = 110°C 2mA
IGT Gate trigger current VAA = 12 V RL= 100Ωtp(g) ≥ 20 µs 8 20 mA
VGT Gate trigger voltage
VAA = 12 V
tp(g) ≥ 20 µs
RL= 100ΩTC = - 40°C 2.5
V
VAA = 12 V
tp(g) ≥ 20 µs
RL= 100Ω0.8 1.5
VAA = 12 V
tp(g) ≥ 20 µs
RL= 100ΩTC = 110°C 0.2
IHHolding current
VAA = 12 V
Initiating IT = 100 mA
TC = - 40°C 100
mA
VAA = 12 V
Initiating IT = 100 mA 40
VT
On-state
voltage IT=8A (see Note 5) 1.7 V
dv/dt Critical rate of rise of
off-state voltage VD = rated VDIG = 0 TC = 110°C 400 V/µs
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 3°C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
3
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
THERMAL INFORMATION
Figure 1. Figure 2.
Figure 3. Figure 4.
AVERAGE ON-STATE CURRENT
TC - Case Temperature - °C
30 40 50 60 70 80 90 100 110
IT(AV) - Maximum Average On-State Current - A
0
2
4
6
8
10
12
14
16 TI03AA
DERATING CURVE
Continuous DC
Conduction
Angle
Φ
0° 180°
Φ = 180°
MAX ANODE POWER LOSS
IT - Continuous On-State Current - A
0·1 1 10 100
PA - Max Continuous Anode Power Dissipated- W
0·1
1
10
100 TI03AB
ON-STATE CURRENT
vs
TJ = 110°C
SURGE ON-STATE CURRENT
Consecutive 50 Hz Half-Sine-Wave Cycles
110100
ITM - Peak Half-Sine-Wave Current - A
1
10
100 TI03AC
CYCLES OF CURRENT DURATION
vs
TC ≤ 70°C
No Prior Device Conduction
Gate Control Guaranteed
TRANSIENT THERMAL RESISTANCE
Consecutive 50 Hz Half-Sine-Wave Cycles
110100
RθJC(t) - Transient Thermal Resistance - °C/W
0·1
1
10 TI03AD
CYCLES OF CURRENT DURATION
vs
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
4
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 5. Figure 6.
Figure 7. Figure 8.
GATE TRIGGER CURRENT
TC - Case Temperature - °C
-50-25 0 255075100125
IGT - Gate Trigger Current - mA
1
10
TC03AA
CASE TEMPERATURE
vs
VAA =12 V
RL = 100 Ω
tp(g) ≥ 20 µs
G
ATE TRI
GG
ER V
O
LTA
G
E
TC - Case Temperature - °C
-50-25 0 255075100125
VGT - Gate Trigger Voltage - V
0
0·2
0·4
0·6
0·8
1TC03AB
CASE TEMPERATURE
vs
VAA =12 V
RL = 100 Ω
tp(g) ≥ 20 µs
HOLDING CURRENT
TC - Case Temperature - °C
-50-250 255075100125
IH - Holding Current - mA
1
10
100 TC03AD
CASE TEMPERATURE
vs
VAA = 12 V
Initiating IT = 100 mA
PEAK ON-STATE VOLTAGE
ITM - Peak On-State Current - A
0·1 1 10 100
VTM - Peak On-State Voltage - V
0
0·5
1
1·5
2
2·5 TC03AE
vs
PEAK ON-STATE CURRENT
TC = 25 °C
tP = 300 µs
Duty Cycle ≤ 2 %
