Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Capable of 1.8V gate drive BVDSS 20V
▼ Simple Drive Requirement RDS(ON) 90mΩ
▼ Surface mount package ID2.5A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient3150 ℃/W
Data and specifications subject to change without notice
Total Power Dissipation 0.833
-55 to 150
200810013
Thermal Data
Parameter
1
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.006
Storage Temperature Range
Continuous Drain Current3, VGS @ 4.5V 2.0
Pulsed Drain Current110
Gate-Source Voltage +8
Continuous Drain Current3, VGS @ 4.5V 2.5
Parameter Rating
Drain-Source Voltage 20
AP2322GN
RoHS-compliant Product
G
D
S
D
G
S
SOT-23
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is widely used for commercial-industrial applications.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=4.5V, ID=1.6A - - 90 mΩ
VGS=2.5V, ID=1A - - 120 mΩ
VGS=1.8V, ID=0.3A - - 150 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=1mA 0.25 - 1 V
gfs Forward Transconductance VDS=5V, ID=2A - 2 - S
IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA
IGSS Gate-Source Leakage VGS=+8V - - +100 nA
QgTotal Gate Charge2ID=2.2A - 7 11 nC
Qgs Gate-Source Charge VDS=16V - 0.7 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 2.5 - nC
td(on) Turn-on Delay Time2VDS=10V - 6 - ns
trRise Time ID=1A - 12 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 16 - ns
tfFall Time RD=10Ω-4-
ns
Ciss Input Capacitance VGS=0V - 350 560 pF
Coss Output Capacitance VDS=20V - 55 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 48 - pF
RgGate Resistance f=1.0MHz - 3.2 4.8 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=0.7A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=2A, VGS=0V, - 20 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 13 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 360 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2322GN
AP2322GN
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
2
4
6
8
10
0 0.5 1 1.5 2
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC
VG=2.0V
5.0V
4.0V
3.0V
2.5V
0
2
4
6
8
10
01234
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC5.0V
4.0V
3.0V
2.5V
VG=2.0V
40
60
80
100
120
0246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=0.3A
TA=25oC
0.6
0.8
1.0
1.2
1.4
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=1.6A
VG=4.5V
0.0
0.2
0.4
0.6
0.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit
4
AP2322GN
0
2
4
6
8
10
12
0 4 8 12 16
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=2.2A VDS =8V
VDS =12V
V DS =16V
10
100
1000
1 5 9 13 17 21 25
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
Q
VG
4.5V
QGS QGD
QG
Charge
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthja)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 360℃/W
tT
0.01
0.1
1
10
100
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
1ms
10ms
100ms
1s
DC
TA=25oC
Single Pulse
0
2
4
6
8
10
0123
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=150oCTj=25oC
VDS =5V
Package Outline : SOT-23
Millimeters
MIN NOM MAX
A 1.00 1.15 1.30
A1 0.00 -- 0.10
A2 0.10 0.15 0.25
D1 0.30 0.40 0.50
e1.70 2.00 2.30
D 2.70 2.90 3.10
E 2.40 2.65 3.00
E1 1.40 1.50 1.60
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SOT-23
ADVANCED POWER ELECTRONICS CORP.
SYMBOLS
NOYY
Part Number : NO
D
E1 E
e
D1
A
A1 A2
Date Code : YY
YY:2004,2008,2012…
YY:2003,2007,2011…
YY:2002,2006,2010…
YY:2001,2005,2009…
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