IGBT MODU ODULE MBN1200GS12AW OUTLINE DRAWING 130 110 2-M4 * High speed and low saturation voltage. G 46.75 * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). Unit in mm E 110 19.5 27.5 FEAT EATURES RES 4-6.5 E 130 Silicon N-channel IGBT C * Isolated head sink (terminal to base). 30 36 19 2-M8 (8) 44 +1 37-0.5 13 E C E G TERMINALS Weight: 1,300 (g) ABSOLUTE MAXIMUM RATINGS (Tc=25C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current DC 1ms DC 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting Symbol Unit MBN1200GS12AW VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - V V 1,200 20 1,200 2,400 1,200 2,400 5,600 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 1.37(14)/7.84(80) 2.94(30) A A W C C VRMS N.m (kgf.cm) Notes:(1)RMS Current of Diode 360Arms max. (2)Recommended Value 1.18/7.35N.m(12/75kgf.cm) CHARACTERISTICS Item (1) (2) (3) (3)Recommended Value 2.45N.m(25kgf.cm) (Tc=25C ) Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES mA 2.0 VCE=1,200V,VGE=0V Gate Emitter Leakage Current IGES nA 500 VGE=20V,VCE=0V Collector Emitter Saturation Voltage VCE(sat) V 2.9 3.6 IC=1,200A,VGE=15V Gate Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC =1,200mA Input Capacitance Cies nF 112 VCE=10V,VGE=0V,f=1MHz Rise Time tr 0.6 1.6 VCC=600V ms Turn On Time ton 0.8 2.2 RL=0.5W Switching Times Fall Time tf 0.45 0.55 RG=3.3W (4) 1.4 1.6 VGE=15V Turn Off Time toff Peak Forward Voltage Drop VFM V 2.5 3.7 IF=1,200A,VGE=0V Reverse Recovery Time trr 0.5 IF=1,200A,VGE=-10V, di/dt=1200A/ms ms Junction to case Rth(j-c) C/W 0.022 Thermal Impedance IGBT 0.05 FWD Rth(j-c) Notes:(4) RG value is the test condition's value for decision of the switching times, not recommended value. Determine the suitable RG value after the measurement of switching waveforms (overshoot voltage,etc.)with appliance mounted. PDE-N1200GS12AW-0 14V VGE=15V13V12V 2400 TYPICAL Tc=25C TYPICAL Tc=125C 2000 1600 11V 1200 Pc=5600W 600 Collector Current, Ic (A) 2000 Collector Current, Ic (A) 14V VGE=15V13V12V 2400 1600 11V 1200 10V 800 10V 400 400 9V 9V 0 0 0 2 4 6 8 0 10 2 4 6 8 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage TYPICAL TYPICAL 10 10 Tc=125C Collector to Emitter Voltage, VCE (V) Collector to Emitter Voltage, VCE (V) Tc=25C 8 6 4 Ic=2400A Ic=1200A 2 0 0 5 10 15 8 6 Ic=2400A 4 Ic=1200A 2 0 0 20 5 10 15 TYPICAL 2400 VGE=0 Tc=25C Tc=125C TYPICAL 20 Vcc=600V Ic =1200A Tc=25C Forward Current, IF (A) 2000 15 10 20 Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage Gate to Emitter Voltage, VGE (V) 10 1600 1200 800 5 400 0 0 2000 4000 6000 8000 10000 0 0 1 2 3 4 5 Forward Voltage, VF (V) Gate Charge, QG (nc) Forward voltage of free-wheeling diode Gate charge characteristics PDE-N1200GS12AW http://store.iiic.cc/ TYPICAL TYPICAL Vcc=600V VGE=15V RG=3.3W TC=25C Resistive Load 10 toff Switching Time, t (ms) Switching Time, t (ms) 1.5 1.0 ton tr 0.5 tf 0 0 200 400 600 800 1000 1200 VCC=600V VGE=15V IC=1200A TC=25C Resistive Load toff tr ton 1 tf 0.1 1400 1 10 100 Gate Resistance, RG (W) Switching time vs. Gate resistance Collector Current, IC (A) Switching time vs. Collector current TYPICAL Vcc=600V VGE=15V RG=3.3W TC=125C Inductive Load 300 TYPICAL 1000 Etoff Etoff Switching Loss, Eton, Etoff (mJ/pulse) Switching Loss, Eton,Etoff, Err (mJ/pulse) 350 250 200 150 100 Eton 50 0 Err 0 200 400 600 800 1000 1200 Eton 100 Err 10 VCC=600V VGE=15V IC =1200A TC=125C Inductive Load 1 1400 100 10 1 Collector Current, IC (A) Gate Resistance, RG (W) Switching loss vs. Collector current Switching loss vs. Gate resistance 10000 Collector Current, Ic (A) 1000 Transient Thermal Impedance, Rth(j-c) (C/W) 1 VGE=15V RG=3.3W TC125C 100 10 0.1 0 200 400 600 800 1000 1200 1400 0.1 Diode IGBT 0.01 0.001 0.001 0.01 0.1 1 10 Time, t (s) Transient thermal impedance Collector to Emitter Voltage, VCE (V) Reverse biased safe operating area PDE-N1200GS12AW http://store.iiic.cc/ HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this data sheets. 2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3.In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. Or consult Hitachi's sales department staff. 4.In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user's units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6.No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8.The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives which is located "Inquiry" portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse http://store.iiic.cc/