MBN1200GS12AW - Hitachi - Datasheet.Live

PDE-N1200GS12AW-0

T T

T M

MOD

ODOD

ODU

MBN1200GS12AW

Silicon N-channel IGBT OUTLINE DRAWING

FEA

EAEA

EAT

URE

RERE

RES

* High speed and low saturation voltage.

* low noise due to built-in free-wheeling

diode - ultra soft fast recovery d i od e(USFD).

* Isolated head sink (terminal to base).

ABSOLUTE MAXIMUM RATINGS (Tc=25°C )

Item Symbol Unit MBN1200GS12AW

Collector Emitte r Voltage VCES V 1,200

Gate Emi tter Voltage VGES V±20

Collector Curre nt DC IC1,200

1ms ICp A2,400

Forward Current DC IF 1,200 (1)

1ms IFM A2,400

Collector Power Dissipation Pc W 5,600

Junction Temperature Tj°C -40 ~ +150

Storage Temperature Tstg °C -40 ~ +125

Isolation Voltage VISO VRMS 2,500(AC 1 minute)

Screw Torque Terminals - 1.37(14)/7.84(80) (2)

Mounting - N.m

(kgf.cm) 2.94(30) (3)

Notes:(1)RMS Current of Diode 360Arms max.

(2)Recommended Value 1.18/7.35N.m(12/75kgf.cm) (3)Recommended Value 2.45N.m(25kgf.cm)

CHARACTERISTICS (Tc=25°C )

Item Symbol Unit Min. Typ. Max. Test Conditions

Colle ctor Emitter Cut-Off Current I CES mA - - 2.0 VCE=1,200V,VGE=0V

Gate Emi tter Leakage Current IGES nA - - ±500 VGE=±20V,VCE=0V

Collector Emitte r Saturation Voltage VCE(sat) V-2.93.6I

C=1,200A,VGE=15V

Gate Emi tter Threshold Volta ge VGE(TO) V--10V

CE=5V, IC =1,200mA

Input Capacitance Cies nF - 112 - VCE=10V,VGE=0V,f=1MHz

Rise Time tr-0.61.6V

CC=600V

Turn On Time ton -0.82.2R

L=0.5W

Fall Time tf- 0.45 0.55 RG=3.3W (4)

Switching Times

Turn Off Time toff

-1.41.6V

GE=±15V

Peak Forward Voltage Drop VFM V-2.53.7I

F=1,200A,VGE=0V

Reverse Recovery Time trr ms--0.5I

F=1,200A,VGE=-10V, di/dt=1200A/ms

IGBT Rth(j-c) - - 0.022

Thermal Impedance FWD Rth(j-c) °C/W - - 0.05 Junction to case

Notes:(4) RG value is the test condition’s value for decis ion of the switching tim es, not recommende d value.

Determine the suitable R

G val ue afte r the measurement of switching waveform s

(overshoot voltage,etc.)with appliance mounted.

Unit in mm

Weight: 1,300 (g) TERMINALS

37+1

-0.5

(8)

130

27.519.546.75

110

1913 30 36

2-M4 4-φ6.5

2-M8

2400

2000

0 2 4 6 8 10

1200

600

1600

400

11V

TYPICAL

10V

Collector Current, Ic (A)

Collector to Emitter Voltage, VCE (V)

00 5 10 15 20

TYPICAL

Collector to Emitter Voltage, V

(V)

Gate to Emitter Voltage, VGE (V)

002000 4000 10000

80006000

TYPICAL

Gate to Emitter Voltage, V

(V)

Forward Current, I

(A)

Gate Charge, QG (nc)

800

1600

2000

2400

1200

400

00 1 2 3 4 5

Forward Voltage, VF (V)

Collector to Emitter Voltage, V

(V)

Gate to Emitter Voltage, VGE (V)

TYPICAL

Collector to Emitter Voltage, VCE (V)

PDE-N1200GS12AW

14V 14V

VGE=15V13V12V

Pc=5600W

2400

2000

0 2 4 6 8 10

1200

800

1600

400

11V

10V

Tc=25°C

Ic=2400A

Ic=1200A

00 5 10 15 20

TYPICAL

Ic=1200A

Ic=2400A

Tc=125°C

VGE=0

Tc=25°C

Tc=125°C

Vcc=600V

Ic =1200A

Tc=25°C

Tc=125°C

Collector current vs. Collector to Emitter voltage

Collector to Emitter voltage vs. Gate to Emitter voltage

Gate charge characteristics Forward voltage of free-wheeling diode

Collector to Emitter voltage vs. Gate to Emitter voltage

Collector current vs. Collector to Emitter voltage

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1.5

1.0

0.5

00 200 400 600 800 1000 1200 1400

TYPICAL

Switching Time, t (ms)

Collector Current, IC (A)

150

250

300

350

200

100

00 200 600400 1000 1200 1400800

Switching Loss, Et

,Et

off

, E

(mJ/pulse)

Collector Current, IC (A)

0.1 110 100

Switching Time, t (ms)

Gate Resistance, RG (W)

TYPICAL

1000

100

1110 100

Switching Loss, Et

, Et

off

(mJ/pulse)

Gate Resistance, RG (W)

1000

10000

100

0.1 0 200 400 600 800 1000 1200 1400

Collector Current, Ic (A)

Collector to Emitter Voltage, VCE (V)

0.1

0.01

0.001

0.001 0.01 0.1 1 10

Transient Thermal Impedance, R

th(j-c)

(°C/W)

Time, t (s)

Diode

IGBT

PDE-N1200GS12AW

ton

toff

Vcc=600V

VGE=±15V

RG=3.3W

TC=25°C

Resistive Load

VCC=600V

VGE=±15V

IC =1200A

TC=125°C

Inductive Load

Err

Eton

Etoff

Eton

Err

Etoff

Vcc=600V

VGE=±15V

RG=3.3W

TC=125°C

Inductive Load

VGE=±15V

RG=3.3W

TC£125°C

toff

ton tr

VCC=600V

VGE=±15V

IC=1200A

TC=25°C

Resistive Load

Switching time vs. Collector current

Switching loss vs. Collector current

Switching time vs. Gate resistance

Switching loss vs. Gate resistance

Reverse biased safe operating area Transient thermal impedance

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change without prior notice to improve product characteristics. Before ordering,

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