HT-150 Series Top View LED(PCB type) Features Package Outline Dimensions C O 1.1 1.6 Electrical / Optical Characteristics (Unit:mm Tolerance:+/-0.1) Part Number Cathode side Emitting color Forward Voltage(VF) Wavelength (nm) typ. Luminous Intensity (mcd)* typ. max. D P min. typ. GaP 2.2 2.6 573 568 30 9 20 20 140 0.6 Cathode mark 2.0 3.2 (1.5) Viewing Angle 2 _12 I F ( mA ) Material HT-150YG Yellow Green HT-150Y Yellow GaAsP 2.1 2.6 590 589 35 3.6 9 20 140 HT-150D Amber GaAsP 2.1 2.6 608 610 35 6.2 9 20 140 HT-150SD Super Bright Orange GaAsP 2.1 2.6 629 642 35 5.6 14 20 140 HT-150UR Super Bright Red AlGaAs 1.8 2.2 643 660 20 9 21 20 140 HT-150UYG Ultra Bright Yellow Green AllnGaP 2.0 2.4 573 574 20 35 60 20 140 HT-150UY Ultra Bright Yellow AllnGaP 1.9 2.4 591 593 15 40 90 20 140 HT-150UD Ultra Bright Amber AllnGaP 1.9 2.4 605 609 17 50 120 20 140 HT-150USD Ultra Bright Orange AllnGaP 1.9 2.4 622 636 17 50 120 20 140 HT-150NB Blue lnGaN 3.3 3.9 470 468 40 25 70 20 140 HT-150NG Green lnGaN 3.3 3.9 527 520 40 65 160 20 140 HT-150TW White lnGaN 3.3 3.9 x=0.29 y=0.31 - - 140 220 20 140 HT-150NB5 Blue lnGaN 2.8 3.15 472 470 40 9 25 5 140 HT-150NG5 Green lnGaN 2.8 3.15 529 522 40 15 45 5 140 HT-150TW5 White lnGaN 2.8 3.15 x=0.29 y=0.32 - - 25 60 5 140 LED Die Polarity Resin PCB Polarity reference for cathode mark is reversed for UR. Directive Characteristics 0 -30 30 60 -60 Recommended Soldering Pattern 50% 100% 0 30 1.5 -30 60 -60 *Per NIST standards 1.5 100% 50% 0 50% 2.0 1.5 100% Forward Current vs. Forward Voltage Relative Intensity vs. Forward Current Absolute Maximum Ratings GaP GaAsP AIGaAs AllnGaP InGaN Unit Power Dissipation PD 65 65 66 72 78 mW DC Forward Current IF 25 25 30 30 20 mA Forward Current (mA) Symbol 120 UR 80 40 I FP* 100 100 100 100 80 10 20 30 SD UR 12 YG 40 60 mA 1.9 2.1 2.3 6 12 18 24 30 Forward Current vs. Forward Voltage 12 UYG 1.5 Forward Current(mA) Forward Voltage (V) Relative Intensity vs. Forward Current 18 0 0 2.5 24 6 0 1.7 Forward Current(mA) 1.7 1.9 2.1 2.3 2.5 Forward Voltage (V) Forward Current vs. Ambient Temperature 35 30 AlInGaP/AlGaAs V C Operating Temperature T OP -30 to 80 O Storage Temperature T ST -40 to 85 O C 30 120 Forward Current (mA) 5 Relative Intensity (%) VR 90 60 NG/NB 30 24 18 NG 12 NB 6 0 6 12 18 Forward Current(mA) 24 30 InGaN 20 15 10 0 0 0 GaP/GaAsP 25 5 * 0.1msec pulse, 10% duty cycle. 6 90 30 1.5 150 Reverse Voltage 18 120 0 0 Pulsed Forward Current Y 24 6 0 30 UY/UD/USD YG/Y/D/SD Relative Intensity (%) Item D (Ta=25 ) Forward Current vs. Forward Voltage Relative Intensity vs. Forward Current 150 30 160 Forward Current (mA) 0 Relative Intensity (%) 50% Forward Current (mA) 100% Unit: mm 2.0 2.4 2.8 3.2 Forward Voltage (V) 3.6 4.0 0 10 20 30 40 50 60 70 80 Ambient Temperature( C) O 90 100 7 HT-150 Series Top View LED(PCB type) Features Package Outline Dimensions C O 1.1 1.6 Electrical / Optical Characteristics (Unit:mm Tolerance:+/-0.1) Part Number Cathode side Emitting color Forward Voltage(VF) Wavelength (nm) typ. Luminous Intensity (mcd)* typ. max. D P min. typ. GaP 2.2 2.6 573 568 30 9 20 20 140 0.6 Cathode mark 2.0 3.2 (1.5) Viewing Angle 2 _12 I F ( mA ) Material HT-150YG Yellow Green HT-150Y Yellow GaAsP 2.1 2.6 590 589 35 3.6 9 20 140 HT-150D Amber GaAsP 2.1 2.6 608 610 35 6.2 9 20 140 HT-150SD Super Bright Orange GaAsP 2.1 2.6 629 642 35 5.6 14 20 140 HT-150UR Super Bright Red AlGaAs 1.8 2.2 643 660 20 9 21 20 140 HT-150UYG Ultra Bright Yellow Green AllnGaP 2.0 2.4 573 574 20 35 60 20 140 HT-150UY Ultra Bright Yellow AllnGaP 1.9 2.4 591 593 15 40 90 20 140 HT-150UD Ultra Bright Amber AllnGaP 1.9 2.4 605 609 17 50 120 20 140 HT-150USD Ultra Bright Orange AllnGaP 1.9 2.4 622 636 17 50 120 20 140 HT-150NB Blue lnGaN 3.3 3.9 470 468 40 25 70 20 140 HT-150NG Green lnGaN 3.3 3.9 527 520 40 65 160 20 140 HT-150TW White lnGaN 3.3 3.9 x=0.29 y=0.31 - - 140 220 20 140 HT-150NB5 Blue lnGaN 2.8 3.15 472 470 40 9 25 5 140 HT-150NG5 Green lnGaN 2.8 3.15 529 522 40 15 45 5 140 HT-150TW5 White lnGaN 2.8 3.15 x=0.29 y=0.32 - - 25 60 5 140 LED Die Polarity Resin PCB Polarity reference for cathode mark is reversed for UR. Directive Characteristics 0 -30 30 60 -60 Recommended Soldering Pattern 50% 100% 0 30 1.5 -30 60 -60 *Per NIST standards 1.5 100% 50% 0 50% 2.0 1.5 100% Forward Current vs. Forward Voltage Relative Intensity vs. Forward Current Absolute Maximum Ratings GaP GaAsP AIGaAs AllnGaP InGaN Unit Power Dissipation PD 65 65 66 72 78 mW DC Forward Current IF 25 25 30 30 20 mA Forward Current (mA) Symbol 120 UR 80 40 I FP* 100 100 100 100 80 10 20 30 SD UR 12 YG 40 60 mA 1.9 2.1 2.3 6 12 18 24 30 Forward Current vs. Forward Voltage 12 UYG 1.5 Forward Current(mA) Forward Voltage (V) Relative Intensity vs. Forward Current 18 0 0 2.5 24 6 0 1.7 Forward Current(mA) 1.7 1.9 2.1 2.3 2.5 Forward Voltage (V) Forward Current vs. Ambient Temperature 35 30 AlInGaP/AlGaAs V C Operating Temperature T OP -30 to 80 O Storage Temperature T ST -40 to 85 O C 30 120 Forward Current (mA) 5 Relative Intensity (%) VR 90 60 NG/NB 30 24 18 NG 12 NB 6 0 6 12 18 Forward Current(mA) 24 30 InGaN 20 15 10 0 0 0 GaP/GaAsP 25 5 * 0.1msec pulse, 10% duty cycle. 6 90 30 1.5 150 Reverse Voltage 18 120 0 0 Pulsed Forward Current Y 24 6 0 30 UY/UD/USD YG/Y/D/SD Relative Intensity (%) Item D (Ta=25 ) Forward Current vs. Forward Voltage Relative Intensity vs. Forward Current 150 30 160 Forward Current (mA) 0 Relative Intensity (%) 50% Forward Current (mA) 100% Unit: mm 2.0 2.4 2.8 3.2 Forward Voltage (V) 3.6 4.0 0 10 20 30 40 50 60 70 80 Ambient Temperature( C) O 90 100 7