Document Number: 89345 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 18-Oct-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Surface Mount Trench MOS Barrier Schottky Rectifier
VSSA36S
Vishay General Semiconductor
New Product
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
FEATURES
Low profile package
Ideal for automated placement
Trench MOS Schottky technology
Low power losses, high efficiency
Low forward voltage drop
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Not recommended for PCB bottom side wave mounting
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
Notes
(1) Mounted on 8 mm x 8 mm pad areas, 1 oz. FR4 PCB
(2) Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
IF(AV) 3.0 A
VRRM 60 V
IFSM 60 A
VF at IF = 3.0 A 0.48 V
TJ max. 150 °C
DO-214AC (SMA)
TMBS®
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VSSA36S UNIT
Device marking code V36
Maximum repetitive peak reverse voltage VRRM 60 V
Maximum DC forward current
IF (1) 3.0
A
IF (2) 2.4
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load IFSM 60 A
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 89345
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 18-Oct-10
VSSA36S
Vishay General Semiconductor
New Product
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
Notes
(1) Free air, mounted on recommended PCB, 1 oz. pad area; thermal resistance RθJA - junction to ambient
(2) Mounted on 8 mm x 8 mm pad areas, 1 oz. FR4 PCB; RθJM - junction to mount
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage IF = 3.0 A
TA = 25 °C
VF (1) 0.53 0.63
V
TA = 125 °C 0.48 0.59
Reverse current VR = 60 V
TA = 25 °C
IR (2) - 900 μA
TA = 125 °C 4 15 mA
Typical junction capacitance 4.0 V, 1 MHz CJ 245 - pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER SYMBOL VSSA36S UNIT
Typical thermal resistance
RθJA (1) 120
°C/W
RθJM (2) 20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
VSSA36S-M3/61T 0.064 61T 1800 7" diameter plastic tape and reel
VSSA36S-M3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel
3.5
2.5
2.0
1.5
1.0
0.5
0
0 25 50 75 100 125 150
T
M
- Mount Temperature (°C)
Average Forward Rectified Current (A)
3.0
TM Measured at Terminal
2.4
2.0
1.6
1.2
0.4
0
0 0.4 3.6
Average Forward Current (A)
Average Power Loss (W)
0.8
3.22.82.42.01.61.20.8
D = 0.1
D = 0.2 D = 0.3
D = 0.5
D = 1.0
D = tp/T tp
T
D = 0.8
Document Number: 89345 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 18-Oct-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
VSSA36S
Vishay General Semiconductor
New Product
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
100
10
1
0.1
0.1 0.3 0.5 0.7 0.9 1.1 1.2
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.2 0.4 0.6 0.8 1.0
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
20 40 60 80 100
100
10
1
0.1
0.01
0.001
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
0.1 1 10 100
1000
100
10
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.01 0.1 1 10 100
1000
100
10
1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Ambient
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.030 (0.76)
0.060 (1.52)
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Revision: 12-Mar-12 1Document Number: 91000
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