October 2001 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop (0.35V) Schottky diode into a single surface mount power package. The MOSFET and Schottky diode are isolated inside the package. The general purpose pinout has been chosen to maximize flexibility and ease of use. FETKEY products are particularly suited for switching applications such as DC/DC buck, boost, synchronous, and non-synchronous converters where the MOSFET is driven as low as 4.5V and fast switching, high efficiency and small PCB footprint is desirable. 6 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 V. RDS(ON) = 0.050 @ VGS = 4.5 V. VF < 0.28 V @ 0.1 A VF < 0.42 V @ 3 A VF < 0.50 V @ 6 A. Schottky and MOSFET incorporated into single power surface mount SO-8 package. General purpose pinout for design flexibility. Ideal for DC/DC converter applications. SuperSOTTM-6 SOT-23 D C C SuperSOTTM-8 D FS FD 303 6N SO-8 SOIC-16 SOT-223 A 1 8 C A 2 7 C S 3 6 D G 4 5 D G SO-8 pin 1 A A MOSFET Maximum Ratings Symbol Parameter S TA = 25oC unless otherwise noted FDFS6N303 Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage 20 V ID Drain Current - Continuous 6 A (Note 1a) - Pulsed PD 30 Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) (Note 1c) TJ,TSTG Operating and Storage Temperature Range Schottky Diode Maximum Ratings VRRM Repetitive Peak Reverse Voltage IO Average Forward Current (c) 2001 Fairchild Semiconductor Corporation W 1.6 0.9 -55 to 150 C 30 V 2 A TA = 25oC unless otherwise noted (Note 1a) FDFS6N303 Rev. D Electrical Characteristics (TA = 25 oC unless otherwise noted ) MOSFET ELECTRICAL CHARACTERISTICS Symbol Parameter Conditions Min BVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 A 30 IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V Typ IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance Units 1 A V TJ =125C VGS(th) Max 20 A 100 nA -100 nA 1.7 3 V VGS = 10 V, I D = 6 A 0.025 0.035 VGS = 4.5 V, I D = 4.8 A 0.043 0.05 1 VDS = 10 V, ID = 6 A 12 S ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V Ciss Input Capacitance VDS = 15 V, VGS = 0 V, 350 f = 1.0 MHz 220 pF 80 pF 15 A pF Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge VDS = 15 V, ID = 6 A, VGS = 10 V 12 17 nC VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 7.5 15 ns 12 25 ns tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time 13 25 ns tf Turn - Off Fall Time 6 15 ns MOSFET DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 1.3 A 0.8 (Note 2) 1.3 A 1.2 V SCHOTTKY DIODE CHARACTERISTICS BV Reverse Breakdown Voltage IR = 1 mA IR Reverse Leakage VR = 30 V 30 0.5 mA V VF Forward Voltage mV IF = 0.1 A 280 IF = 3 A 420 IF = 6 A 500 THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W RJC Thermal Resistance, Junction-to-Case (Note 1) 40 C/W Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a. 78OC/W on a 0.5 in2 pad of 2oz copper. b. 125OC/W on a 0.02 in2 pad of 2oz copper. c. 135OC/W on a 0.003 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. FDFS6N303 Rev. D Typical Electrical Characteristics VGS= 10V 3 6.0V 20 R DS(ON) , NORMALIZED 5.0V 25 4.5V 15 4.0V 10 3.5V 5 DRAIN-SOURCE ON-RESISTANCE ID , DRAIN-SOURCE CURRENT (A) 30 2.5 VGS = 4.0V 2 4.5V 5.0V 1.5 6.0V 7.0V 10V 1 3.0V 0.5 0 0 1 2 3 4 0 5 10 R DS(ON) , ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.2 1 0.8 0.075 0 25 50 75 100 125 150 TA = 125C 0.05 0.025 0 -25 25C 2 4 I S , REVERSE DRAIN CURRENT (A) I D , DRAIN CURRENT (A) TA = -55C 25C 25 125C 20 15 10 5 2 3 4 5 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 6 10 7 VGS = 0V 10 1 TA = 125C 25C 0.1 -55C 0.01 0.001 0.0001 1 8 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 30 VDS = 5V 6 V GS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 0 30 I D = 3A TJ , JUNCTION TEMPERATURE (C) 30 25 0.1 ID = 6A VGS = 10V 1.4 0.6 -50 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 1.6 15 I D , DRAIN CURRENT (A) V DS , DRAIN-SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDFS6N303 Rev. D Typical Fet And Schottky Electrical Characteristics 1000 I D = 6.0A V DS = 5V CAPACITANCE (pF) 8 10V 15V 6 4 500 Ciss Coss 200 100 2 0 2 4 6 8 10 12 14 0.3 1 3 10 30 VDS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 10 IR , REVERSE CURRENT (A) 1 TJ = 125C 1 0.1 Crss f = 1 MHz VGS = 0V 50 0.1 0 25C 0 0.1 0.2 0.3 0.4 V F , FORWARD VOLTAGE (V) 0.5 TJ = 125C 0.1 0.01 0.001 25C 0.0001 0.00001 0.6 0 5 10 15 20 VR , REVERSE VOLTAGE (V) 25 30 Figure 10. Schottky Diode Reverse Current. Figure 9. Schottky Diode Forward Voltage. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE I F , FORWARD CURRENT (A) V GS , GATE-SOURCE VOLTAGE (V) 10 1 0.5 0.2 0.1 0.05 0.02 D = 0.5 R JA (t) = r(t) * R JA R JA =135 C/W 0.2 0.1 0.05 P(pk) 0.02 0.01 0.01 t1 Single Pulse Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 t2 TJ - TA = P * RJA (t) 0.005 0.001 0.01 0.1 1 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. FDFS6N303 Rev. D SOIC-8 Tape and Reel Data SOIC(8lds) Packaging Configuration: Figure 1.0 ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES N NT IO NS AT TERVE PR ECAUTIO OBSE Packaging Description: SOIC-8 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. Embossed ESD Marking LING HAND FOR TATIC TROS ELEC ITIVE SENS ES DEVIC Antistatic Cover Tape These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. Static Dissipative Embossed Carrier Tape F63TNR Label Customized Label F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 Pin 1 SOIC (8lds) Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Standard (no flow code) TNR 2,500 L86Z F011 D84Z Rail/Tube TNR TNR 95 4,000 500 13" Dia - 13" Dia 7" Dia 355x333x40 530x130x83 355x333x40 193x183x80 Max qty per Box 5,000 30,000 8,000 2,000 Weight per unit(gm) 0.0774 0.0774 0.0774 0.0774 Weight per Reel (kg) 0.6060 - 0.9696 0.1182 Box Dimension (mm) F852 NDS 9959 SOIC-8 Unit Orientation Barcode Label Note/Comments Barcode Label 355mm x 333mm x 40mm Intermediate container for 13" reel option Barcode Label Barcode Label sample 193mm x 183mm x 80mm Pizza Box for Standard Option SOIC(8lds)Tape Leader and Trailer Configuration: Figure 2.0 LOT: CBVK741B019 CBVK741B019 FDS9953A FSID: FDS9953A 3000 QTY: 2500 SPEC: D/C1: Z9842AB QTY1: SPEC REV: D/C2: QTY2: CPN: FAIRCHILD SEMICONDUCTOR CORPORATION (F63T NR) Carrier Tape Cover Tape Components Tr ailer Ta pe 640mm minimum or 80 empty pockets (c)2001 Fairchild Semiconductor Corporation Leader Tape 1680mm minimum or 210 empty pockets June 2001, Rev. C1 SOIC-8 Tape and Reel Data, continued SOIC(8lds) Embossed Carrier Tape Configuration: Figure 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type SOIC(8lds) (12mm) A0 5.30 +/-0.10 B0 6.50 +/-0.10 W 12.0 +/-0.3 D0 D1 1.55 +/-0.05 E1 1.60 +/-0.10 E2 1.75 +/-0.10 F 10.25 min P1 5.50 +/-0.05 P0 8.0 +/-0.1 4.0 +/-0.1 K0 2.1 +/-0.10 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). T Wc 0.450 +/0.150 9.2 +/-0.3 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SOIC(8lds) Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 - 0.606 11.9 - 15.4 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 - 0.606 11.9 - 15.4 12mm 7" Dia 7.00 177.8 12mm 13" Dia 13.00 330 a 1998 Fairchild Semiconductor Corporation Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) January 2001, Rev. C SOIC-8 Package Dimensions SOIC-8 (FS PKG Code S1) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0774 9 (c)2000 Fairchild Semiconductor International September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4