APT40N60JCU3 ISOTOP(R) Buck chopper Super Junction MOSFET Power Module D VDSS = 600V RDSon = 70m max @ Tj = 25C ID = 40A @ Tc = 25C Application * AC and DC motor control * Switched Mode Power Supplies Features * G S A A S D G * * * - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated ISOTOP(R) Package (SOT-227) Very low stray inductance High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant ISOTOP ID IDM VGS RDSon PD IAR EAR EAS IFA V IFRMS Parameter Drain - Source Breakdown Voltage Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) Tc = 25C Tc = 80C Max ratings 600 40 30 120 20 70 290 20 1 1800 30 39 Unit V A V m W A June, 2006 Symbol VDSS mJ A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1-8 APT40N60JCU3 - Rev 1 Absolute maximum ratings APT40N60JCU3 All ratings @ Tj = 25C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25C Tj = 125C VGS = 10V, ID = 20A VGS = VDS, ID = 1mA VGS = 20 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 40A Resistive Switching VGS = 15V VBus = 380V ID = 40A R G = 1.8 2.1 3 Min Typ 7015 2565 212 259 29 Max 25 250 70 3.9 100 Unit Max Unit A m V nA pF nC 111 20 30 115 ns 10 Inductive switching @ 25C VGS = 15V, VBus = 400V ID = 40A, R G = 5 670 Inductive switching @ 125C VGS = 15V, VBus = 400V ID = 40A, R G = 5 1100 980 1206 J J June, 2006 Symbol www.microsemi.com 2-8 APT40N60JCU3 - Rev 1 Electrical Characteristics APT40N60JCU3 Chopper diode ratings and characteristics Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Reverse Recovery Time trr Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/s Tj = 125C Tj = 25C Tj = 125C Tj = 25C 23 IF = 30A VR = 400V di/dt =200A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C 85 160 4 8 130 700 70 1300 30 Reverse Recovery Time IRRM Maximum Reverse Recovery Current Qrr Reverse Recovery Charge trr Qrr Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IRRM IF = 30A VR = 400V di/dt =1000A/s Min 250 500 Tj = 125C Characteristic Min Typ CoolMos Diode RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) Max 1.8 44 Thermal and package characteristics Symbol Typ 1.6 1.9 1.4 RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 Unit V A pF ns A nC ns nC A Max 0.43 1.21 20 Unit C/W V 150 300 1.5 29.2 C N.m g Typical CoolMOS Performance Curve 0.5 0.4 0.35 0.9 0.7 0.3 0.25 0.5 0.2 0.1 0.05 0.3 0.1 June, 2006 0.15 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 Re ctangular Puls e Duration (Se conds ) 1 10 Fig 1, Maximum Effective transient thermal Impe dance, Junction to case vs Pulse Duration www.microsemi.com 3-8 APT40N60JCU3 - Rev 1 Thermal Impedance (C/W) 0.45 M axim um Effe ctive Trans ient The rm al Im pedance , Junction to Case vs Puls e Duration APT40N60JCU3 45 35 30 25 20 15 10 5 0 25 50 75 100 125 150 T C, Case Tem perature (C) June, 2006 Figure 6, DC Drain Current vs Case Temperature www.microsemi.com 4-8 APT40N60JCU3 - Rev 1 ID, DC Drain Current (A) 40 www.microsemi.com 5-8 APT40N60JCU3 - Rev 1 June, 2006 APT40N60JCU3 APT40N60JCU3 www.microsemi.com 6-8 APT40N60JCU3 - Rev 1 June, 2006 Typical Diode Performance Curve www.microsemi.com 7-8 APT40N60JCU3 - Rev 1 June, 2006 APT40N60JCU3 APT40N60JCU3 SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) Anode 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Gate ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 8-8 APT40N60JCU3 - Rev 1 "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". June, 2006 Dimensions in Millimeters and (Inches)