APT40N60JCU3
APT40N60JCU3 – Rev 1 June, 2006
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ISOTOP
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
A
S
G
D
S
ymbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 600 V
Tc = 25°C 40
ID Continuo us Drain Current Tc = 80°C 30
IDM Pulsed Drain current 120
A
VGS Gate - Source Voltage ±20 V
RDSon Drain - Source ON Resistance 70 mΩ
PD Maximum Power Dissipation Tc = 25°C 290 W
IAR Avalanche current (repetitive and non repetitive) 20 A
EAR Repetitive Avalanche Energy 1
EAS Single Pulse Avalanche Energy 1800 mJ
IFAV
Maximum Average Forward Current Duty cycle=0.5 Tc = 80°C 30
IFRMS RMS Forward Current (Square wave, 50% duty) 39 A
VDSS = 600V
RDSon = 70mΩ max @ Tj = 25°C
ID = 40A @ Tc = 25°C
Applicatio
n
• AC and DC motor control
• Switched Mode Power Supplies
Fe ature s
•
- Ul tra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
• ISOTOP® Package (SOT-227)
• Very low stray inductance
• High level of integration
Benefits
• Outsta ndi ng perfor mance at hi gh freq uenc y operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
ISOTOP® Buck chopper
Super Junction
M
OSFET Power Modul
e
A
D
G
S
APT40N60JCU3
APT40N60JCU3 – Rev 1 June, 2006
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V, VDS = 600V Tj = 25°C 25
IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 600V T
j = 125°C 250 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 20A 70 mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 1mA 2.1 3 3.9 V
IGS S Gate – Source Leakage Current VGS = ±20 V, VDS = 0V ±100 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cis s Input Capacitance 7015
Coss Output Capacitance 2565
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 212
pF
Qg Total gate Charge 259
Qgs Gate – Source Charge 29
Qgd Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 40A 111
nC
Td(on) Tur n-on Delay Ti me 20
Tr Rise Time 30
Td(off) Turn-off Delay Time 115
Tf Fall Time
Resistive Switching
VGS = 15V
VBus = 380V
ID = 40A
RG = 1.8Ω 10
ns
Eon Tur n-o n Switchi ng Energy 670
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 40A, RG = 5Ω 980
µJ
Eon Tur n-o n Switchi ng Energy 1100
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 40A, RG = 5Ω 1206 µJ
APT40N60JCU3
APT40N60JCU3 – Rev 1 June, 2006
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Chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
IF = 30A 1.6 1.8
IF = 60A 1.9
VF Diode Forward Voltage
IF = 30A Tj = 125°C 1.4
V
VR = 600V Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR = 600V Tj = 125°C 500 µA
CT Junction Capacitance VR = 200V 44 pF
Reverse Recovery Time IF=1A,VR=30V
di/dt =100A/µs Tj = 25°C 23
Tj = 25°C 85
trr
Reverse Recovery Time Tj = 125°C 160
ns
Tj = 25°C 4
IRRM Maximum Reverse Recovery Current Tj = 125°C 8 A
Tj = 25°C 130
Qrr Reverse Recovery Charge
IF = 30A
VR = 400V
di/dt =200A/µs
Tj = 125°C 700 nC
trr Reverse Recovery Time 70 ns
Qrr Reverse Recovery Charge 1300 nC
IRRM Maximum Reverse Recovery Current
IF = 30A
VR = 400V
di/dt =1000A/µs
Tj = 125°C
30 A
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
CoolMos 0.43
RthJC Junction to Case Thermal Resistance Diode 1.21
RthJA Junction to Ambient (IGBT & Diode) 20
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ,TSTG Storage Temperature Range -55 150
TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4 mm Machine) 1.5 N.m
Wt Package Weight 29.2 g
Typical CoolMOS Performance Curve
M aximum Effe ctive Transient The rm al Im pedance, Junction to Case vs Puls e Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.00001 0.0001 0.001 0.01 0.1 1 10
Re ctangular Puls e Duration (Seconds )
Thermal Impedance (°C/W)
Fig 1, Maximum Effective transient thermal Impe dance, Junction to case vs Pulse Duration
APT40N60JCU3
APT40N60JCU3 – Rev 1 June, 2006
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0
5
10
15
20
25
30
35
40
45
25 50 75 100 125 150
T
C
, Case Temperature (°C)
I
D
, DC Drain Current (A)
Figure 6, DC Drain Current vs Case Temperature
APT40N60JCU3
APT40N60JCU3 – Rev 1 June, 2006
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APT40N60JCU3
APT40N60JCU3 – Rev 1 June, 2006
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Typical Diode Performance Curve
APT40N60JCU3
APT40N60JCU3 – Rev 1 June, 2006
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APT40N60JCU3
APT40N60JCU3 – Rev 1 June, 2006
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SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places) 4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
ISOTOP® is a registered trademark of ST Microelectronics NV
M icros e mi re se rve s the rig ht to c ha nge, witho ut notice , t he s pe cificatio ns and info rmatio n co nta i ne d he rein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
Source Gate
Drain
Anode
