2011-9 PRODUCT GUIDE Small and Medium Diodes SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Small and Medium Diodes Recently, many products ranging from computers and home appliances to automobiles and industrial equipment have been driving the need for effective solutions to reduce size and weight. Semiconductor requirements differ from application to application. Take power supplies for example, which are being required to accommodate higher capacity in smaller dimensions. This increases the temperature at which systems are operated. To address this problem, Toshiba offers an extensive portfolio of small, high-efficiency diodes, including Schottky barrier diodes (SBDs) featuring high-speed operation and low forward loss. Diodes Schottky Barrier Diodes (SBDs) Toshiba offers low-loss SBDs fabricated with a next-generation process. These SBDs will help increase the performance of equipment that requires a small form factor and high efficiency, such as mobile devices and switching power supplies. SBDs with a reverse voltage of 20 V to 60 V and an average forward current of 0.7 A to 10 A are available in small surface-mount packages. You will find SBDs that best suit your applications. Rectifier Diodes Diodes for general rectification and reverse-current protection Super-Fast-Recovery Diodes (S-FRDs) High-Efficiency Diodes (HEDs) Diodes with a reverse voltage of 200 V to 1000 V and an average forward current of 0.3 A to 5 A are available in small surface-mount packages. Toshiba's product portfolio also includes diodes with high ESD performance ideal for automotive applications. Zener Diodes Zener diodes are available with a wide range of Zener voltage specifications from 6.2 V to 390 V. They can be used for a wide range of applications such as consumer, automotive and industrial electronics. 2 1. Key Features ..................................................................... 4 2. New Small & Medium Diodes ............................................ 5 3. Selection Guide ................................................................. 8 4. Product Characteristics ................................................... 10 4.1 Schottky Barrier Diodes (SBDs) Single ............... 10 Dual ................. 11 4.2 Rectification Diodes Single, Dual ....... 12 4.3 High-Speed Rectifiers ................................................... 13 (1) Super-Fast-Recovery Diodes (S-FRDs) Single ............... 13 (2) High-Efficiency Diodes (HEDs) Single ............... 14 4.4 Zener Diodes ............................................................... 15 5. Application Examples and Toshiba's Recommended Diodes ....... 17 6. Packaging and Packing Information ................................ 18 7. Symbols, Terms and Definitions ...................................... 22 This brochure contains information on small and medium diodes only. For switching diodes, small-signal Schottky barrier diodes and ESD protection diodes, see the following brochure or our homepage: Homepage Brochure http://www.semicon.toshiba.co.jp/eng General-Purpose Small-Signal Surface-Mount Devices 3 1. Key Features 1 Schottky Barrier Diodes (SBDs) Schottky Barrier Diodes (SBDs) Voltage rating: VRRM = 20 V, 30 V, 40 V, 60 V Current rating: IF(AV) = 0.7 A to 10 A Peak forward voltage: VFM = 0.32 V typ. (0.37 V max) ............ VRRM = 30 V VFM = 0.35 V typ. (0.39 V max) ............ VRRM = 30 V (Shown only as examples) VFM = 0.42 V typ. (0.45 V max) ............ VRRM = 30 V VFM = 0.48 V typ. (0.55 V max) ............ VRRM = 40 V VFM = 0.52 V typ. (0.58 V max) ............ VRRM = 60 V 2 Rectification Diodes (Diodes for General Rectification and Reverse-Current Protection) Voltage rating: VRRM = 400 V to 800 V Current rating: IF(AV) = 0.3 A to 2 A Diodes with high ESD performance are available. 3 Super-Fast-Recovery Diodes (S-FRDs) Super-Fast-Recovery Diodes (S-FRDs) Voltage rating: VRRM = 400 V, 600 V, 800 V, 900 V, 1000 V Current rating: IF(AV) = 0.5 A to 2 A High-speed switching: Reverse recovery time (trr) 100 ns 4 High-Efficiency Diodes (HEDs) High-Efficiency Diodes (HEDs) Voltage rating: VRRM = 200 V, 300 V, 400 V Current rating: IF(AV) = 0.5 to 5 A High-speed switching: Reverse recovery time (trr) 35 ns or 50 ns 5 Zener Diodes 4 Vz = 6.2 V to 390 V Power dissipation: P = 0.7 W, 1.0 W, 2.0 W (S-FLATTM and M-FLATTM packages) Available in a bidirectional configuration for diodes with VZ = 16 V (M-FLATTM package; P = 1.0 W). 2. New Small & Medium Diodes Surface-Mount Package Trend for Diodes Toshiba has been working to develop the most compact surface-mount packages which allow communication equipment to be miniaturized. (Ta = 25C) Footprint and Thermal Resistance Glass-epoxy board: Board size = 50 mm , Solder land = 6 mm TM (Except L-FLAT ) 160 US-FLAT 150 S-FLAT M-FLAT 130 IF(AV) = 0.7 to 1.5 A VRRM = 20 to 60 V 120 50 mm 100 80 70 60 IF(AV) = 1.0 to 3.0 A VRRM = 200 to 400 V IF(AV) = 3.0 to 5.0 A VRRM = 200 to 400 V IF(AV) = 0.5 to 1.0 A VRRM = 200 V 50 mm 90 IF(AV) = 10 A VRRM = 30 to 60 V IF(AV) = 1.0 to 3.0 A VRRM = 20 to 60 V 110 6 mm Thermal Resistance (C/W) 140 IF(AV) = 1.0 to 5.0 A VRRM = 30 to 60 V L-FLAT 6 mm 5 0 20 15 Footprint Area (mm2) 10 25 30 35 Lead Internal Structure of FLAT Packages Chip Epoxy resin The FLAT packages feature reduced wire inductance and resistance and Lead an enhanced thermal property compared to wire-bonded packages. FLAT Package Series US-FLATTM S-FLATTM M-FLATTM L-FLATTM HM-FLAT Ultra-Small Flat Package Small Flat Package Middle Flat Package Large Flat Package Hybrid Middle Flat Package Typical product: CUS01, CUS10I30A 1.25 Typical product: CRS01, CRS10I30A Thickness: 0.6 typ. 1.6 2.6 1.9 2.5 2.4 Thickness: 0.98 typ. 3.8 Typical product: CLS01 4.0 Thickness: 0.98 typ. 5.5 Typical product: HMG01 Thickness: 1.8 typ. 2.4 8.2 4.7 3.5 Unit: mm Typical product: CMS01, CMS10I30A Unit: mm Unit: mm Thickness: 0.98 typ. 2.6 3.35 Unit: mm Unit: mm New Diodes HMG Series (Diodes for General Rectification and Reverse-Current Protection in an HM-FLAT Package) The HMG02, a new addition to the portfolio of the HMG Series, contains two diodes in an HM-FLAT package. Absolute Maximum Ratings Part Number HMG02 Electrical Characteristics (Max) VRRM (V) IF(AV) (A) IFSM (A) Tj (C) Tstg (C) IRRM (A) VFM (V) @IFM (A) 400 0.7 10 175 -40 to 175 10 1.0 0.5 Note: Dual diode. VRRM, IF(AV), IFSM, IRRM and VFM are specified per diode. CMZB Series (Zener diodes in an M-FLATTM Package) Toshiba has expanded its product portfolio with Zener diodes with a power dissipation of 1 W and a Zener voltage of 68 V to 390 V. Zener Characteristics Zener Characteristics Zener Voltage, Vz (V) Part Number Min CMZB68 CMZB75 CMZB82 CMZB100 CMZB110 CMZB150 CMZB180 61.2 67.5 73.8 90 99 135 162 Typ. 68 75 82 100 110 150 180 Max 74.8 82.5 90.2 110 121 165 198 Measurement Current IZ (mA) Part Number 4 4 3 3 3 2 1.5 CMZB200 CMZB220 CMZB240 CMZB270 CMZB300 CMZB330 CMZB390 Zener Voltage, Vz (V) Min 180 198 216 243 270 297 351 Typ. 200 220 240 270 300 330 390 Max 220 242 264 297 330 363 429 Measurement Current IZ (mA) 1.5 0.5 0.5 0.5 0.5 0.5 0.5 5 2. New Small & Medium Diodes New Series of Schottky Barrier Diodes Toshiba now offers small to medium Schottky barrier diodes (SBDs) fabricated with a next-generation process. The second-generation SBD portfolio now consists of 23 SBDs with 17 new devices added. Owing to low peak forward voltage (VFM) and low peak repetitive forward voltage (IRRM) characteristics, these SBDs provide low power loss, help reduce the size and improve the power efficiency of mobile handsets, switching power supplies, etc., thereby improving their overall performance. Voltage rating: VRRM = 30 V, 40 V Current rating: IF(AV) = 1 A to 3 A Tradeoff Relationship between the Forward Voltage and Reverse Leakage Current (Example) Peak forward voltage (Typical characteristics: CRS10I30A) 1000 IRRM(A)@VRRM = 30 V VFM = 0.35 V typ. (0.39 V max (@IFM = 0.7 A)) Small surface-mount packages (US-FLATTM, S-FLATTM, M-FLATTM) 100 Conventional SBDs 10 New SBDs 1 0.25 0.3 0.35 0.4 0.45 0.5 VFM(V)@IF = 0.7 A Forward Voltage (V F) Curves (Example) Reverse Leakage Current (IR) Curves (Example) IF-VF IR-Tj (Typ.) VR = 30 V 100 10 Pulse test 10 Reverse Current, IR (mA) Forward Current, IF (A) Tj = 25C Pulse test 1 New 0.1 0.0 0.2 0.4 CRS10I30A CRS01 (Low-VF) CRS03 (Low-IR) 0.6 Forward Voltage, VF (V) 0.8 1 0.1 0.01 New 0.001 1.0 0.0001 0 20 40 60 CRS10I30A CRS01 (Low-VF) CRS03 (Low-IR) 80 100 120 140 Junction Temperature, Tj (C) Product Naming Conventions Starting with the new SBD series, the product naming conventions have been changed as shown below. Product names denote packaging, current rating, voltage rating and go on. Product Naming Conventions CRS 10 I 30 A (1) (2) (3) (4) (5) (1) Toshiba Schottky barrier diode/package style CRS: S-FLAT package CMS: M-FLAT package CUS: US-FLAT package 6 (2) Average forward current, IF(AV) Example: 10: 1.0 A (3) Product feature I: Low forward voltage & low leakage current (New SBD series) F: Low forward voltage R: Low leakage current (4) Reverse voltage, VRRM Example: 30: 30 V (5) Suffix that indicates an additional feature Product Lineup Absolute Maximum Ratings Package Part Number IFSM (A) Tj (C) Tstg (C) IRRM (mA) VFM (V) @IFM (A) 1.0 20 150 -55 to 150 0.06 0.39 0.7 1.5 20 150 -55 to 150 0.06 0.46 1.5 1.0 20 150 -55 to 150 0.06 0.49 0.7 20 150 -55 to 150 0.06 0.39 0.7 20 150 -55 to 150 0.06 0.42 1.0 CRS10I30C 30 150 -55 to 150 0.10 0.36 1.0 CRS15I30A 20 150 -55 to 150 0.06 0.46 1.5 30 150 -55 to 150 0.10 0.40 1.5 20 150 -55 to 150 0.06 0.49 2.0 30 150 -55 to 150 0.10 0.45 2.0 30 150 -55 to 150 0.10 0.49 3.0 20 150 -55 to 150 0.06 0.49 0.7 25 150 -55 to 150 0.10 0.45 1.0 20 150 -55 to 150 0.06 0.55 1.5 20 150 -55 to 150 0.06 0.60 2.0 25 150 -55 to 150 0.10 0.52 2.0 1.0 30 150 -55 to 150 0.10 0.36 1.0 2.0 30 150 -55 to 150 0.10 0.45 2.0 CUS15I30A US-FLATTM New CUS10I40A 30 40 CRS10I30A 1.0 CRS10I30B New S-FLATTM M-FLATTM Electrical Characteristics (Max) IF(AV) (A) CUS10I30A VRRM (V) 30 1.5 New CRS15I30B New CRS20I30A New CRS20I30B New CRS30I30A New CRS10I40A New CRS10I40B New CRS15I40A New CRS20I40A New CRS20I40B New CMS10I30A New CMS20I30A New CMS30I30A 3.0 30 150 -55 to 150 0.10 0.49 3.0 New CMS10I40A 1.0 25 150 -55 to 150 0.10 0.45 1.0 New CMS15I40A 1.5 25 150 -55 to 150 0.10 0.49 1.5 New CMS20I40A 2.0 25 150 -55 to 150 0.10 0.52 2.0 New CMS30I40A 3.0 25 150 -55 to 150 0.10 0.55 3.0 2.0 3.0 1.0 40 1.5 2.0 30 40 7 3. Selection Guide Schottky Barrier Diodes (SBDs) Average Forward Current 0.7 A Package Peak Repetitive Reverse Voltage 20 V 30 V CUS05 CUS06 CUS01 CUS02 CUS10I30A CRS01 CRS03 CRS05 CRS11 CRS10I30A CRS10I30B CRS10I30C CMS08 CMS09 CMS10I30A TPCF8E02 CUS15I30A CRS08 CRS09 CRS15I30A CRS15I30B US-FLATTM US-FLATTM CRS06 1A S-FLATTM M-FLATTM VS-8 US-FLATTM 1.5 A 40 V CUS03 CUS10I40A S-FLATTM CRS04 CRS10I40A CRS10I40B M-FLATTM S-FLATTM 3A M-FLATTM 5A M-FLATTM 10 A L-FLATTM : Dual (Two separate diodes) Reference Page 1 10 1 10 2 10 3 11 6 1 11 10 2 10 3 11 2 10 3 11 CRS15I40A CMS15I40A CRS20I40A CRS20I40B CRS14 CRS20I30A CRS20I30B CMS06 CMS07 CMS17 CMS20I30A CRS15 CRS30I30A CMS01 CMS03 CMS18 CMS30I30A CMS04 CMS05 CLS01 2A Package Number CRS12 CRS13 CMS10 CMS10I40A M-FLATTM S-FLATTM 60 V CUS04 CMS11 CMS20I40A CMS14 2 10 CMS16 CMS19 CMS21 CMS30I40A CMS15 CMS20 3 11 3 11 CLS02 CLS03 4 11 Package Number Reference Page : IF(DC) = 3A Rectification Diodes Diodes for General Rectification and Reverse-Current Protection Average Forward Current 0.3 A Package VS-6 0.5 A HM-FLAT 0.7 A S-FLATTM S-FLATTM 1A 2A Peak Repetitive Reverse Voltage 400 V TPC6K01 600 V 800 V 5 HMG01 HMG02 CRG02 CRG07 CRG03 CRG09 7 2 12 CRG04 CRG05 M-FLATTM CMC02 CMG05 CMG07 CMG06 CMG08 3 M-FLATTM CMG02 CMG03 3 : AEC-Q101-qualified at Tj = 175C : Designed for strobe discharge applications. : Dual : High ESD protection 8 2 Super-Fast-Recovery Diodes (S-FRDs) and High-Efficiency Diodes (HEDs) Super-Fast-Recovery Diodes (S-FRDs) Average Forward Current 0.5 A 1A 2A Package S-FLATTM M-FLATTM M-FLATTM M-FLATTM Reverse Recovery Time (Max) 100 ns 100 ns 100 ns 100 ns 600 V CRF03(0.7 A) Peak Repetitive Reverse Voltage 800 V 900 V CRF02 CMF04 CMF03 Package Number 1000 V Reference Page 2 3 CMF05 13 3 CMF02 CMF01 3 : Designed for strobe charge applications High-Efficiency Diodes (HEDs) Average Forward Current 0.5 A Single Type 1A 2A 3A 5A Package S-FLATTM S-FLATTM M-FLATTM M-FLATTM M-FLATTM L-FLATTM L-FLATTM Peak Repetitive Reverse Voltage Reverse Recovery Time (Max) 200 V CRH02 CRH01 CMH04 35 ns 35 ns 35 ns 50 ns 35 ns 50 ns 35 ns 50 ns 35 ns 35 ns 300 V Reference Page 2 CMH05A CMH05 CMH08A CMH08 CMH02A CMH02 CLH03 CLH07 CMH07 CMH01 CLH01 CLH05 Package Number 400 V CLH02 CLH06 14 3 4 Zener Diodes Zener Diodes Power Dissipation Package VZ(V) 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 Package Number Reference Page 0.7 W 1W S-FLATTM CRY62 CRY68 CRY75 CRY82 CRY91 CRZ10 CRZ11 CRZ12 CRZ13 CRZ15 CRZ16 CRZ18 CRZ20 CRZ22 CRZ24 CRZ27 CRZ30 CRZ33 CRZ36 M-FLATTM CMZB12 CMZB13 CMZB15 CMZB16 CMZB18 CMZB20 CMZB22 CMZB24 CMZB27 CMZB30 CMZB33 CMZB36 2 15 2W CMZ12 CMZ13 CMZ15 CMZ16 CMZ18 CMZ20 CMZ22 CMZ24 CMZ27 CMZ30 CMZ33 CMZ36 3 16 15 Power Dissipation Package VZ(V) 39 43 47 51 53 68 75 82 100 110 150 180 200 220 240 270 300 330 390 Package Number Reference Page 2W 1W 0.7 W S-FLATTM M-FLATTM CRZ39 CRZ43 CRZ47 CMZB39 CMZB43 CMZB47 CMZB51 CMZB53 CMZB68 CMZB75 CMZB82 CMZB100 CMZB110 CMZB150 CMZB180 CMZB200 CMZB220 CMZB240 CMZB270 CMZB300 CMZB330 CMZB390 2 CMZ39 CMZ43 CMZ47 CMZ51 CMZ53 3 15 16 15 Bidirectional Zener Diode Part Number CMZM16 Power Dissipation 1W Package M-FLATTM VZ (V) Package Number 16 3 Reference Page 16 9 4. Product Characteristics 4.1 Schottky Barrier Diodes (SBDs) Voltage rating: VRRM = 20 V, 30 V, 40 V, 60 V Current rating: IF(AV) = 0.7 A to 10 A Available in surface-mount packages. Single Package US-FLATTM S-FLATTM Part Number CUS05 CUS06 CUS01 CUS02 CUS10I30A CUS15I30A CUS03 CUS10I40A CUS04 CRS06 CRS01 CRS03 CRS05 CRS11 CRS10I30A CRS10I30B CRS10I30C CRS08 CRS09 CRS15I30A CRS15I30B CRS14 CRS20I30A CRS20I30B CRS15 CRS30I30A CRS04 CRS10I40A CRS10I40B CRS15I40A CRS20I40A CRS20I40B CRS12 CRS13 : IRRM = 5 A Max (VR = 5 V) 10 Absolute Maximum Ratings Electrical Characteristics (Max) VRRM (V) IF(AV) (A) IFSM (A) Tj (C) Tstg (C) IRRM (mA) VFM (V) @IFM (A) Cj (pF) (Typ.) Conditions 0.37 1.0 20 0.7 1.0 -40 to 150 40 20 125 0.45 20 0.7 1.0 -40 to 150 0.03 40 20 150 0.37 1.5 30 0.7 1.0 -40 to 150 40 20 125 0.45 0.1 30 0.7 1.0 -40 to 150 40 20 150 VR = 10 V, 0.39 30 0.7 1.0 -55 to 150 0.06 50 20 150 f = 1 MHz 0.46 30 1.5 1.5 -55 to 150 0.06 50 20 150 0.52 0.1 40 0.7 0.7 -40 to 150 45 20 150 0.49 40 0.7 1.0 -55 to 150 0.06 35 20 150 0.58 0.1 60 0.7 0.7 -40 to 150 38 20 150 0.36 1 20 1.0 1.0 -40 to 150 60 20 125 0.37 1.5 30 0.7 1.0 -40 to 150 40 20 125 0.1 0.45 30 0.7 1.0 -40 to 150 40 20 150 0.45 30 1.0 1.0 -40 to 150 60 20 150 1.5 0.36 30 1.0 1.0 -40 to 150 60 20 125 0.39 30 0.7 1.0 -55 to 150 0.06 50 20 150 0.42 30 1.0 1.0 -55 to 150 0.06 50 20 150 0.36 30 1.0 1.0 -55 to 150 0.10 82 30 150 1 0.36 30 1.5 1.5 -40 to 150 90 30 125 0.46 30 1.5 1.5 -40 to 150 0.05 90 30 150 0.46 30 1.5 1.5 -55 to 150 0.06 50 20 150 0.40 30 1.5 1.5 -55 to 150 0.10 82 30 150 VR = 10 V, 0.49 30 2.0 2.0 -40 to 150 0.05 90 30 150 f = 1 MHz 0.49 30 2.0 2.0 -55 to 150 0.06 50 20 150 0.45 30 2.0 2.0 -55 to 150 0.10 82 30 150 0.52 30 3.0 3.0 -40 to 150 0.05 90 30 150 0.49 30 3.0 3.0 -55 to 150 0.10 82 30 150 0.1 0.49 40 0.7 1.0 -40 to 150 47 20 150 0.49 40 0.7 1.0 -55 to 150 0.06 35 20 150 0.45 40 1.0 1.0 -55 to 150 0.10 62 25 150 0.55 40 1.5 1.5 -55 to 150 0.06 35 20 150 0.60 40 2.0 2.0 -55 to 150 0.06 35 20 150 0.52 40 2.0 2.0 -55 to 150 0.10 62 25 150 0.1 0.58 60 1.0 1.0 -40 to 150 40 20 150 0.55 60 1.0 1.0 -40 to 150 0.05 40 20 150 : IF(DC) = 3 A Single Package Part Number CMS08 CMS09 CMS10I30A CMS06 CMS07 CMS17 CMS20I30A CMS01 CMS03 CMS18 CMS30I30A CMS04 CMS05 CMS10 CMS10I40A CMS15I40A CMS11 CMS20I40A CMS16 CMS19 CMS30I40A CMS14 CMS15 CMS20 M-FLATTM L-FLATTM Absolute Maximum Ratings Electrical Characteristics (Max) VRRM (V) IF(AV) (A) IFSM (A) Tj (C) Tstg (C) IRRM (mA) VFM (V) @IFM (A) Cj (pF) (Typ.) Conditions 0.37 1.0 70 125 -40 to 150 1.5 30 1.0 25 0.45 1.0 70 150 -40 to 150 0.5 30 1.0 25 0.36 1.0 82 150 -55 to 150 0.10 30 1.0 30 0.37 2.0 130 125 -40 to 150 3.0 30 2.0 40 0.45 2.0 130 150 -40 to 150 0.5 30 2.0 40 0.48 2.0 90 150 -40 to 150 0.1 30 2.0 30 0.45 2.0 82 150 -55 to 150 0.10 30 2.0 30 0.37 3.0 190 125 -40 to 150 5.0 30 3.0 40 0.45 3.0 190 150 -40 to 150 0.5 30 3.0 40 0.64 3.0 170 150 -40 to 150 0.01 30 3.0 40 0.49 3.0 82 150 -55 to 150 0.10 30 3.0 30 0.37 5.0 330 125 -40 to 150 8.0 VR = 10 V, 30 5.0 70 f = 1 MHz 0.45 5.0 330 150 -40 to 150 0.8 30 5.0 70 0.55 1.0 50 150 -40 to 150 0.5 40 1.0 25 0.45 1.0 62 150 -55 to 150 0.10 40 1.0 25 0.49 1.5 62 150 -55 to 150 0.10 40 1.5 25 0.55 2.0 95 150 -40 to 150 0.5 40 2.0 30 0.52 2.0 62 150 -55 to 150 0.10 40 2.0 25 0.55 3.0 95 150 -40 to 150 0.2 40 3.0 30 0.68 3.0 125 150 -40 to 150 0.01 40 3.0 40 0.55 3.0 62 150 -55 to 150 0.10 40 3.0 25 0.58 2.0 77 150 -40 to 150 0.2 60 2.0 40 0.58 3.0 102 150 -40 to 150 0.3 60 3.0 60 0.72 3.0 105 150 -40 to 150 0.01 60 3.0 40 CLS01 30 10 100 125 -40 to 150 1.0 0.47 10 530 CLS02 40 10 100 125 -40 to 150 1.0 0.55 10 420 CLS03 60 10 100 125 -40 to 150 1.0 0.58 10 345 : IRRM = 5 A Max (VR = 5 V) VR = 10 V, f = 1 MHz : IF(DC) = 3 A Dual Part Number Package Absolute Maximum Ratings Electrical Characteristics (Max) VRRM (V) IF(AV) (A) IFSM (A) Tj (C) Tstg (C) IRRM (mA) VFM (V) @IFM (A) Cj (pF) (Typ.) Conditions TPCF8E02 30 1.0 7 150 -40 to 150 0.1 0.49 1.0 54 VR = 10 V f = 1 MHz VS-8 Note: VRRM, IF(AV), IFSM, IRRM, VFM and Cj are specified per diode. Marking US-FLATTM S-FLATTM 1 S-FLATTM SF S1 Cathode mark Cathode mark Cathode mark Example: CRS01 L-FLATTM S1 VS-8 FBB Pin 1 Cathode mark Example: CMS01 Example: CRS10I30A S01 Example: CUS01 M-FLATTM Example: CLS01 Example: TPCF8E02 11 4. Product Characteristics 4.2 Rectification Diodes (Diodes for General Rectification and Reverse-Current Protection) Voltage rating: VRRM = 400 V, 600 V, 800 V Current rating: IF(AV) = 0.3 A to 2 A Available in surface-mount packages. Single Package Part Number S-FLATTM M-FLATTM VRRM (V) Absolute Maximum Ratings IF(AV) (A) IFSM (A) Tj (C) 150 15 0.7 Electrical Characteristics (Max) IRRM (A) VFM (V) @IFM (A) Tstg (C) -40 to 150 10 1.1 0.7 -40 to 175 10 1.1 0.7 -40 to 150 10 1.1 0.7 150 -40 to 150 10 1.1 0.7 15 150 -40 to 150 10 1.1 1.0 1.0 15 150 -40 to 150 10 1.2 1.0 150 -40 to 150 10 1.0 1.0 CRG02 400 CRG07 400 0.7 15 175 CRG03 400 1.0 15 150 CRG09 400 1.0 15 CRG04 600 1.0 CRG05 800 CMC02 400 1.0 30 CMG05 400 1.0 15 150 -40 to 150 10 1.1 1.0 CMG07 400 1.0 30 150 -40 to 150 10 1.1 1.0 CMG02 400 2.0 80 150 -40 to 150 10 1.1 2.0 CMG06 600 1.0 15 150 -40 to 150 10 1.1 1.0 CMG08 600 1.0 30 150 -40 to 150 10 1.1 1.0 CMG03 600 2.0 80 150 -40 to 150 10 1.1 2.0 : AEC-Q101-qualified at Tj = 175C : High ESD protection : Designed for strobe discharge applications Dual Package Part Number VRRM (V) Absolute Maximum Ratings IF(AV) (A) IFSM (A) Tj (C) Electrical Characteristics (Max) IRRM (A) VFM (V) @IFM (A) Tstg (C) TPC6K01 400 0.3 3 150 -55 to 150 10 1.1 0.3 HMG01 400 0.5 10 150 -40 to 150 10 1.0 0.5 HMG02 400 0.7 10 175 -40 to 175 10 1.0 0.5 VS-6 HM-FLAT Note: IF(AV), IFSM, IRRM and VFM are specified per diode. Marking S-FLATTM VS-6 M-FLATTM G4 G2 HM-FLAT R2A GG1 Cathode mark Example: CRG04 12 Cathode mark Example: CMG02 Pin 1 Example: TPC6K01 Pin 1 Example: HMG01 4.3 High-Speed Rectifiers Super-Fast-Recovery Diode (S-FRDs) Voltage rating: VRRM = 600 V, 800 V, 900 V, 1000 V Current rating: IF(AV) = 0.5 A to 2 A High-speed switching: Reverse recovery time (trr) 100 ns High-Efficiency Diode (HEDs) Voltage rating: VRRM = 200 V, 300 V, 400 V Current rating: IF(AV) = 0.5 to 5 A High-speed switching: Reverse recovery time (trr) 35 ns or 50 ns Available in surface-mount packages. (1) Super-Fast-Recovery Diodes (S-FRDs) Single Package Part Number Absolute Maximum Ratings Electrical Characteristics (Max) VRRM (V) IF(AV) (A) IFSM (A) Tj (C) Tstg (C) IRRM (A) VFM (V) @IFM (A) trr (ns) Conditions CRF02 800 0.5 10 150 -40 to 150 50 3.0 0.5 100 IF = 1 A, di/dt = -30 A/s CRF03 600 0.7 10 150 -40 to 150 50 2.0 0.7 100 CMF01 600 2.0 30 150 -40 to 150 50 2.0 2.0 100 CMF02 600 1.0 10 150 -40 to 150 50 2.0 1.0 100 CMF04 800 0.5 10 150 -40 to 150 50 2.5 0.5 100 CMF03 900 0.5 10 125 -40 to 150 50 2.5 0.5 100 CMF05 1000 0.5 10 125 -40 to 150 50 2.7 0.5 100 S-FLATTM M-FLATTM IF = 1 A, di/dt = -30 A/s : Designed for strobe discharge applications 13 4. Product Characteristics (2) High-Efficiency Diodes (HEDs) Single Package Part Number CRH02 Absolute Maximum Ratings Electrical Characteristics (Max) VRRM (V) IF(AV) (A) IFSM (A) Tj (C) Tstg (C) IRRM (A) VFM (V) @IFM (A) trr (ns) Conditions 200 0.5 10 150 -40 to 150 10 0.95 0.5 35 IF = 1 A, di/dt = -30 A/s S-FLATTM M-FLATTM L-FLATTM CRH01 200 1.0 15 150 -40 to 150 10 0.98 1.0 35 CMH04 CMH07 CMH01 CMH05 CMH05A CMH08 CMH08A CMH02 CMH02A CLH01 CLH05 CLH02 CLH06 CLH03 CLH07 200 200 200 400 400 400 400 400 400 200 200 300 300 400 400 1.0 2.0 3.0 1.0 1.0 2.0 2.0 3.0 3.0 3.0 5.0 3.0 5.0 3.0 5.0 20 40 40 20 10 30 20 40 30 60 100 50 60 30 50 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 -40 to 150 -40 to 150 -40 to 150 -40 to 150 -40 to 150 -40 to 150 -40 to 150 -40 to 150 -40 to 150 -40 to 150 -40 to 150 -40 to 150 -40 to 150 -40 to 150 -40 to 150 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 0.98 0.98 0.98 1.3 1.8 1.3 1.8 1.3 1.8 0.98 0.98 1.3 1.3 1.8 1.8 1.0 2.0 3.0 1.0 1.0 2.0 2.0 3.0 3.0 3.0 5.0 3.0 5.0 3.0 5.0 35 35 35 50 35 50 35 50 35 35 35 35 35 35 35 Marking S-FRDs S-FLATTM M-FLATTM F2 Cathode mark F1 Cathode mark Example: CRF02 Example: CMF01 HEDs M-FLATTM H1 Cathode mark Cathode mark Example: CRH01 14 H1 L-FLATTM H01 S-FLATTM Example: CMH01 Example: CLH01 IF = 1 A, di/dt = -30 A/s IF = 2 A, di/dt = -50 A/s 4.4 Zener Diodes Packages VZ = 6.2 V to 390 V Power dissipation: P = 0.7 W, 1.0 W, 2.0 W (S-FLATTM and M-FLATTM packages) Available in a bidirectional configuration for diodes with VZ = 16 V (M-FLATTM package; P = 1.0 W). S-FLATTM M-FLATTM CRY62 and CRZ10 Series (S-FLATTM) Power Part Number Dissipation (mW) CRY62 CRY68 CRY75 CRY82 CRY91 CRZ10 CRZ11 CRZ12 CRZ13 CRZ15 CRZ16 CRZ18 CRZ20 CRZ22 CRZ24 CRZ27 CRZ30 CRZ33 CRZ36 CRZ39 CRZ43 CRZ47 700 700 700 700 700 700 700 700 700 700 700 700 700 700 700 700 700 700 700 700 700 700 Ta = 25C Min Temperature Coefficient Forward Reverse Zener Characteristics Voltage of Zener Voltage Current Dynamic Measurement Measurement Measurement VF T IR Resistance Current Current Voltage (mV/C) (V) (A) rd () IZ IF VR (mA) (A) (V) Typ. Max Max Typ. Max Max Max 5.6 6.2 6.8 7.4 8.2 9.0 9.9 10.8 11.7 13.5 14.4 16.2 18.0 19.8 21.6 24.3 27.0 29.7 32.4 35.1 38.7 42.3 6.2 6.8 7.5 8.2 9.1 10.0 11.0 12.0 13.0 15.0 16.0 18.0 20.0 22.0 24.0 27.0 30.0 33.0 36.0 39.0 43.0 47.0 Zener Voltage VZ (V) 6.8 7.4 8.3 9.0 10.0 11.0 12.1 13.2 14.3 16.5 17.6 19.8 22.0 24.2 26.4 29.7 33.0 36.3 39.6 42.9 47.3 51.7 60 60 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 35 40 65 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 9 8 7 6 2 3 4 4 5 6 7 8 9 11 12 14 16 18 20 23 25 26 28 30 33 38 3 4 5 6 8 9 11 13 14 17 19 23 26 28 32 36 40 41 45 48 53 60 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 CMZ12 Series (M-FLATTM) Ta = 25C Zener Characteristics Power Part Number Dissipation (W) CMZ12 CMZ13 CMZ15 CMZ16 CMZ18 CMZ20 CMZ22 CMZ24 CMZ27 CMZ30 CMZ33 CMZ36 CMZ39 CMZ43 CMZ47 CMZ51 CMZ53 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 3.0 3.0 4.5 4.9 5.5 6.0 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 17.0 19.0 21.0 26.4 28.8 31.2 34.4 37.6 Zener Voltage VZ (V) Min Typ. Max 10.8 11.7 13.5 14.4 16.2 18.0 19.8 21.6 24.3 27.0 29.7 32.4 35.1 38.7 42.3 45.9 47.7 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 53 13.2 14.3 16.5 17.6 19.8 22.0 24.2 26.4 29.7 33.0 36.3 39.6 42.9 47.3 51.7 56.1 58.3 Dynamic Measurement Resistance Current rd () IZ (mA) Max 30 30 30 30 30 30 30 30 30 30 30 30 35 40 65 65 85 10 10 10 10 10 10 10 10 10 10 10 9 8 7 6 6 5 Temperature Coefficient Forward Reverse of Zener Voltage Current Voltage Measurement Measurement T IR VF Current Voltage (mV/C) (V) (A) IF VR (A) (V) Typ. Max Max Max 8 9 11 12 14 16 18 20 23 25 26 28 30 33 38 43 49 13 14 17 19 23 26 28 32 36 40 41 45 48 53 60 68 77 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 8 9 10 11 13 14 16 17 19 21 26.4 28.8 31.2 34.4 37.6 40.8 42.4 15 4. Product Characteristics CMZB12 Series (M-FLATTM) Power Part Number Dissipation (W) Ta = 25C Zener Characteristics Temperature Coefficient Forward Reverse of Zener Voltage Voltage Measurement Current Measurement Dynamic Measurement Zener Voltage T VF IR Resistance Current Current Voltage VZ (V) (mV/C) (V) (A) rd () IZ IF VR (mA) (A) (V) Min Typ. Max Max Typ. Max Max Max CMZB12 1.0 10.8 12 13.2 30 10 8 13 1.2 0.2 10 CMZB13 1.0 11.7 13 14.3 30 10 9 14 1.2 0.2 10 9 CMZB15 1.0 13.5 15 16.5 30 10 11 17 1.2 0.2 10 10 CMZB16 1.0 14.4 16 17.6 30 10 12 19 1.2 0.2 10 11 CMZB18 1.0 16.2 18 19.8 30 10 14 23 1.2 0.2 10 13 CMZB20 1.0 18.0 20 22.0 30 10 16 26 1.2 0.2 10 14 CMZB22 1.0 19.8 22 24.2 30 10 18 28 1.2 0.2 10 16 CMZB24 1.0 21.6 24 26.4 30 10 20 32 1.2 0.2 10 17 CMZB27 1.0 24.3 27 29.7 30 10 23 36 1.2 0.2 10 19 CMZB30 1.0 27.0 30 33.0 30 10 25 40 1.2 0.2 10 21 CMZB33 1.0 29.7 33 36.3 30 10 26 41 1.2 0.2 10 26.4 CMZB36 1.0 32.4 36 39.6 30 9 28 45 1.2 0.2 10 28.8 CMZB39 1.0 35.1 39 42.9 35 8 30 48 1.2 0.2 10 31.2 CMZB43 1.0 38.7 43 47.3 40 7 33 53 1.2 0.2 10 34.4 CMZB47 1.0 42.3 47 51.7 65 6 38 60 1.2 0.2 10 37.6 CMZB51 1.0 45.9 51 56.1 65 6 43 68 1.2 0.2 10 40.8 CMZB53 1.0 47.7 53 58.3 85 5 49 77 1.2 0.2 10 42.4 CMZB68 1.0 61.2 68 74.8 120 4 57 90 1.2 0.2 10 54.4 CMZB75 1.0 67.5 75 82.5 150 4 66 104 1.2 0.2 10 60 CMZB82 1.0 73.8 82 90.2 170 3 71 113 1.2 0.2 10 65.6 CMZB100 1.0 90 100 110 300 3 87 138 1.2 0.2 10 80 CMZB110 1.0 99 110 121 300 3 96 152 1.2 0.2 10 88 CMZB150 1.0 135 150 165 450 2 136 210 1.2 0.2 10 120 CMZB180 CMZB200 1.0 162 180 198 500 1.5 161 254 1.2 0.2 10 144 1.0 180 200 220 500 1.5 170 269 1.2 0.2 10 160 CMZB220 1.0 198 220 242 5000 0.5 200 309 1.2 0.2 10 176 CMZB240 1.0 216 240 264 5000 0.5 215 343 1.2 0.2 10 192 CMZB270 1.0 243 270 297 5000 0.5 243 385 1.2 0.2 10 216 CMZB300 1.0 270 300 330 5000 0.5 270 428 1.2 0.2 10 240 CMZB330 1.0 297 330 363 5000 0.5 296 473 1.2 0.2 10 264 CMZB390 1.0 351 390 429 10000 0.5 350 555 1.2 0.2 10 312 8 CMZM16 Bidirectional Zener Diode Series (M-FLATTM) CMZM16 1.0 Zener Characteristics Dynamic Zener Voltage Resistance VZ (V) rd () Min Typ. Max Max 14.4 16 17.6 30 Measurement Current IZ (mA) 10 Temperature Coefficient of Zener Voltage Reverse Current IR (A) Typ. Max Max Measurement Voltage VR (V) 12 19 10 11 T (mV/C) Marking CMZB12 Series B 18 CMZ12 Series Example: CMZ24 Example: CMZB18 CMZM16 Series 16 13 7.5 CRY62, CRZ10 Series 24 Part Number Power Dissipation (W) Ta = 25C Cathode mark Example: CRY75 16 Cathode mark Example: CRZ13 Cathode mark Example: CMZM16 5. Application Examples and Toshiba's Recommended Diodes Notebook PCs DC-DC Converter DC-DC Reverse-Current Protection Load Switch AC Adapter Battery Charger 45 W 15 V, 3 A 60 W 15 V, 4 A 1.5 V/1.5 A 1.8 V/1.5 A 3 V/5 A Secondary Battery Main Battery 5 V/5 A Applications Reverse-battery and reverse-current protection DC-DC converters Package US-FLATTM S-FLATTM M-FLATTM S-FLATTM M-FLATTM Recommended Diodes CUS01, CUS02, CUS10I30A, CUS15I30A CRS01, CRS03, CRS05, CRS06, CRS08, CRS09, CRS11, CRS14 CMS01, CMS03, CMS06, CMS07, CMS08, CMS09, CMS16 CRS03, CRS04, CRS05, CRS09, CRS13, CRS10I30A, CRS15I30A, CRS20I30A CMS03, CMS05, CMS14, CMS15, CMS20I30A, CMS30I30A, CMS20I40A, CMS30I40A Automotive MOSFET Gate Protection Circuit Reverse-Battery Protection ECU Switching Circuit Flywheel Diode Surge Absorber Load B IC Load A Battery Applications Reverse-battery and reverse-current protection Surge absorbers Flywheeling MOSFET gate protection DC-DC converters Package S-FLATTM M-FLATTM S-FLATTM M-FLATTM S-FLATTM M-FLATTM S-FLATTM M-FLATTM M-FLATTM Recommended Diodes CRG04, CRG05, CRG07, CRG09, CRG02, CRG03, HMG02 CMG02, CMG03, CMG05, CMG06, CMG07, CMG08 CRZ Series CMZB Series, CMZ Series CRH01, CRH02 CMH01, CMH04, CMH07 CRZ Series CMZB Series, CMZ Series, CMZM16 CMS18, CMS19, CMS20 17 6. Packaging and Packing Information 6.1 Surface-Mount Packages US-FLATTM Unit: mm Tape dimensions 1.75 0.1 3.5 0.05 0.2 0.05 2.65 0.1 o1.5 +0.1 -0 1.97 0.05 4.0 0.1 2.0 0.05 1.60 0.1 Package dimensions 8.0 0.1 1 0.7 0.05 4.0 0.1 L Type R Type o1.05 0.05 1.44 0.1 1.01 0.05 1.94 0.1 9.0 0.3 Reel dimensions o180 0.3 8.0 o160 4 0.2 0.8 *2 o60 1 5 0.2 *1 18 min 13 0.2 Land pattern dimensions for reference only o76 0.5 3 0.2 1.2 0.5 1.2 0.5 2.0 *1: 2 0.2 *2: 4 0.5 Type: TE85 R or L S-FLATTM Unit: mm Package dimensions Tape dimensions 4.0 0.1 0.2 0.05 0.65 3.8 0.1 0.65 o1.5 +0.1 -0 8.0 0.2 1.75 0.1 2 4000 pcs/reel Packing quantities: 1.1 1.45 0.1 o1.1 0.1 4.0 0.1 1.9 0.1 L Type R Type 1.9 Reel dimensions 9.0 0.3 o180 0.3 o160 4 0.2 *2 o76 2.8 3 0.2 18 min o60 1 5 0.2 *1 13 0.2 Land pattern dimensions for reference only 1.2 0.5 1.2 *1: 2 0.2 *2: 4 0.5 1.2 18 Packing quantities: 1.2 0.5 Type: TE85 R or L 3000 pcs/reel M-FLATTM Unit: mm Tape dimensions 4.0 0.1 0.3 0.05 +0.1 o1.5 - 0 2.0 0.05 B 5.5 0.05 12.0 0.3 1.75 0.1 Package dimensions 2 max 2 max 3 4.0 0.1 1.25 0.1 R Type 1.5 0.1 L Type 2.7 13 0.3 o180 0.3 5 0.2 *1 1.4 2.1 o60 1 o160 4 0.2 Land pattern dimensions for reference only 18 min *2 o76 3.0 3 0.2 13 0.2 Reel dimensions 1.2 0.5 1.4 *1: 2 0.2 *2: 4 0.5 3000 pcs/reel Packing quantities: L-FLATTM Unit: mm Tape dimensions 4.0 0.1 B o2.05 0.05 0.3 0.05 A' 7.5 0.1 A A' L Type B 8.9 0.1 2.0 0.1 8.0 0.1 A + 0.1 - 0.0 16.0 0.3 o1.5 1.75 0.1 Package dimensions 2.3 0.1 R Type B' 4.4 0.1 Reel dimensions 330 2.0 17.5 0.5 Land pattern dimensions for reference only 135 55 80 5.9 4 135 o10 100 1.0 o10 15 0.2 1.8 22 2.5 2 0.5 4.8 4 1.2 0.5 Type: TE12 R or L Type: TE16 R or L 2.9 Packing quantities: 2500 pcs/reel 19 6. Packaging and Packing Information 6.1 Surface-Mount Packages VS-6 Unit: mm Tape dimensions 0.3 0.05 A B B' o1.1 0.1 A 3.5 0.1 1.75 0.1 4.0 0.1 + 0.1 - 0.0 2.75 8.0 0.2 o1.5 3.3 0.1 Package dimensions 5.2 0.2 5 B 6 1 4 5 1. Anode 1 2. NC 3. Anode 2 4. Cathode 2 5. NC 6. Cathode 1 2 3 A' 2.0 0.08 A' 4.0 0.1 L Type 1.4 0.1 1.55 0.1 B' 3.05 0.1 Reel dimensions 11.4 9.0 5.0 Land pattern dimensions for reference only 0.8 2.4 o60 o180 0.6 1.0 0.8 Type: TE85L 0.95 VS-8 Unit: mm Tape dimensions 4.0 0.1 + 0.1 - 0.0 A 2.0 0.1 0.2 0.05 A B B' 2.1 3.5 0.1 o1.5 2.75 8.0 0.2 1.75 0.1 Package dimensions 2.2 6 3000 pcs/reel Packing quantities: 0.95 4.0 0.1 o1.1 0.1 3 5 4 Reel dimensions 11.4 9.0 5.0 1.50 Land pattern dimensions for reference only 3.1 0.1 180 2 6 0.95 0.1 B' 60 1 7 B 0.65(8X) 8 1. Anode 1 2. NC 3. NC 4. Anode 2 5. Cathode 2 6. Cathode 2 7. Cathode 1 8. Cathode 1 A' A' Type: TE85L 0.40(8X) 0.65(6X) 20 Packing quantities: 4000 pcs/reel HM-FLAT 2.0 0.05 +0.1 0 0.20 0.05 8.0 0.1 B 3.50 0.05 4.0 0.1 o1.5 3.6 Tape dimensions 1.75 0.1 Package dimensions 3.5 0.05 Unit: mm A' A o1.05 0.05 B - B' A : Enlarged view 1 0.65 1.13 0.05 B' 2.85 1.13 0.05 3 0.65 4 2.70 0.05 2 1. Anode 1 2. Anode 2 3. Cathode 2 4. Cathode 1 A - A' 9.0 0.3 o180 0.3 Reel dimensions o160 4 0.2 *2 o76 18 min 3.0 3 0.2 o6 1 5 0.2 *1 13 0.2 Land pattern dimensions for reference only 1.2 0.5 0.8 *1: 2 0.2 *2: 4 0.5 1.2 0.5 Type: TE85L 1.0 7 1.4 Packing quantities: 3000 pcs/reel 21 7. Symbols, Terms and Definitions Symbol Definition IF(AV) Average forward current The maximum average current value of a half sine wave (180 conduction angle) at the 50/60-Hz utility frequency that can flow in a diode under specified conditions, or the average forward current value of a square wave under specified conditions. Io Average output current The maximum average current value of a full sine wave (360 conduction angle) at the 50/60-Hz utility frequency that can flow in a diode under specified conditions. VRRM Peak repetitive reverse voltage The instantaneous maximum allowable value (peak value) of the reverse voltage that can be applied repeatedly to a diode. Non-repetitive peak surge current The non-repetitive maximum allowable peak current in one cycle of a 50-Hz sine wave (180 conduction angle) that can flow in the forward direction of a diode at a specified junction temperature. This rating applies only to abnormal operation, which seldom occurs during the lifetime of the diode. Tj(max) Junction temperature The junction temperature at which the reliability and lifetime of the device can be guaranteed. Tstg Storage temperature Ambient temperature range within which the device can be stored while not operating. IRRM Peak repetitive reverse current The maximum reverse leakage current value (peak value) when a specified reverse voltage, VRRM, is applied. VFM Peak forward voltage The maximum value of voltage drop when a specified forward current, IFM, flows. trr Reverse recovery time The time required for the current to reach a specified reverse current after instantaneous switching from forward to reverse. VZ Zener voltage The voltage value when a specified Iz current flows in reverse between the anode and cathode of a Zener diode. rd Dynamic resistance The ratio of change in a Zener voltage to the corresponding change in a specified current, Iz, in the Zener area. Temperature coefficient of Zener voltage The ratio of change in a Zener voltage to the corresponding change in a junction temperature. P Zener power dissipation The maximum power dissipation under specified conditions. tfr Forward recovery time When a forward voltage is applied to a diode under specified conditions, the time required for the applied power to propagate across the whole area of the diode. IFM Peak forward current The forward current under specified conditions. Cj Junction capacitance The junction capacitance when a reverse voltage is applied to a diode under specified conditions. VR Reverse voltage Reverse voltage that is applied to a diode. IR Reverse current The reverse leakage current when a specified reverse voltage is applied to a diode. Non-repetitive peak reverse surge current The non-repetitive peak reverse surge current that can flow in the reverse direction of a diode under specified conditions. This rating applies only to abnormal operation, which seldom occurs during the lifetime of the diode. IFSM T IRSM 22 Term V TOSHIBA Semiconductor & Storage Products Company Right here and now ! 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WORKS CONTINUALLY TO IMPROVE 0RODUCTgS QUALITY AND RELIABILITY 0RODUCT CAN MALFUNCTION OR FAIL #USTOMERS ARE RESPONSIBLE FOR COMPLYING WITH SAFETY STANDARDS AND FOR PROVIDING ADEQUATE DESIGNS AND SAFEGUARDS FOR THEIR HARDWARE SOFTWARE AND SYSTEMS WHICH MINIMIZE RISK AND AVOID SITUATIONS IN WHICH A MALFUNCTION OR FAILURE OF 0RODUCT COULD CAUSE LOSS OF HUMAN LIFE BODILY INJURY OR DAMAGE TO PROPERTY INCLUDING DATA LOSS OR CORRUPTION "EFORE CUSTOMERS USE THE 0RODUCT CREATE DESIGNS INCLUDING THE 0RODUCT OR INCORPORATE THE 0RODUCT INTO THEIR OWN APPLICATIONS CUSTOMERS MUST ALSO REFER TO AND COMPLY WITH A THE LATEST VERSIONS OF ALL RELEVANT 4/3()"! INFORMATION INCLUDING WITHOUT LIMITATION THIS DOCUMENT THE SPECIFICATIONS THE DATA SHEETS AND APPLICATION NOTES FOR 0RODUCT AND THE PRECAUTIONS AND CONDITIONS SET FORTH IN THE 4/3()"! 3EMICONDUCTOR 2ELIABILITY (ANDBOOK AND B THE INSTRUCTIONS FOR THE APPLICATION WITH WHICH THE 0RODUCT WILL BE USED WITH OR FOR #USTOMERS ARE SOLELY RESPONSIBLE FOR ALL ASPECTS OF THEIR OWN PRODUCT DESIGN OR APPLICATIONS INCLUDING BUT NOT LIMITED TO A DETERMINING THE APPROPRIATENESS OF THE USE OF THIS 0RODUCT IN SUCH DESIGN OR APPLICATIONS B EVALUATING AND DETERMINING THE APPLICABILITY OF ANY INFORMATION CONTAINED IN THIS DOCUMENT OR IN CHARTS DIAGRAMS PROGRAMS ALGORITHMS SAMPLE APPLICATION CIRCUITS OR ANY OTHER REFERENCED DOCUMENTS AND C VALIDATING ALL OPERATING PARAMETERS FOR SUCH DESIGNS AND APPLICATIONS TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. 0RODUCT IS INTENDED FOR USE IN GENERAL ELECTRONICS APPLICATIONS EG COMPUTERS PERSONAL EQUIPMENT OFFICE EQUIPMENT MEASURING EQUIPMENT INDUSTRIAL ROBOTS AND HOME ELECTRONICS APPLIANCES OR FOR SPECIFIC APPLICATIONS AS EXPRESSLY STATED IN THIS DOCUMENT 0RODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENT OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY ANDOR RELIABILITY ANDOR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE BODILY INJURY SERIOUS PROPERTY DAMAGE OR SERIOUS PUBLIC IMPACT h5NINTENDED 5SEv 5NINTENDED 5SE INCLUDES WITHOUT LIMITATION EQUIPMENT USED IN NUCLEAR FACILITIES EQUIPMENT USED IN THE AEROSPACE INDUSTRY MEDICAL EQUIPMENT EQUIPMENT USED FOR AUTOMOBILES TRAINS SHIPS AND OTHER TRANSPORTATION TRAFFIC SIGNALING EQUIPMENT EQUIPMENT USED TO CONTROL COMBUSTIONS OR EXPLOSIONS SAFETY DEVICES ELEVATORS AND ESCALATORS DEVICES RELATED TO ELECTRIC POWER AND EQUIPMENT USED IN FINANCE RELATED FIELDS $O NOT USE 0RODUCT FOR 5NINTENDED 5SE UNLESS SPECIFICALLY PERMITTED IN THIS DOCUMENT $O NOT DISASSEMBLE ANALYZE REVERSE ENGINEER ALTER MODIFY TRANSLATE OR COPY 0RODUCT WHETHER IN WHOLE OR IN PART 0RODUCT SHALL NOT BE USED FOR OR INCORPORATED INTO ANY PRODUCTS OR SYSTEMS WHOSE MANUFACTURE USE OR SALE IS PROHIBITED UNDER ANY APPLICABLE LAWS OR REGULATIONS 4HE INFORMATION CONTAINED HEREIN IS PRESENTED ONLY AS GUIDANCE FOR 0RODUCT USE .O RESPONSIBILITY IS ASSUMED BY 4/3()"! FOR ANY INFRINGEMENT OF PATENTS OR ANY OTHER INTELLECTUAL PROPERTY RIGHTS OF THIRD PARTIES THAT MAY RESULT FROM THE USE OF 0RODUCT .O LICENSE TO ANY INTELLECTUAL PROPERTY RIGHT IS GRANTED BY THIS DOCUMENT WHETHER EXPRESS OR IMPLIED BY ESTOPPEL OR OTHERWISE ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. $O NOT USE OR OTHERWISE MAKE AVAILABLE 0RODUCT OR RELATED SOFTWARE OR TECHNOLOGY FOR ANY MILITARY PURPOSES INCLUDING WITHOUT LIMITATION FOR THE DESIGN DEVELOPMENT USE STOCKPILING OR MANUFACTURING OF NUCLEAR CHEMICAL OR BIOLOGICAL WEAPONS OR MISSILE TECHNOLOGY PRODUCTS MASS DESTRUCTION WEAPONS 0RODUCT AND RELATED SOFTWARE AND TECHNOLOGY MAY BE CONTROLLED UNDER THE *APANESE &OREIGN %XCHANGE AND &OREIGN 4RADE ,AW AND THE 53 %XPORT !DMINISTRATION 2EGULATIONS %XPORT AND RE EXPORT OF 0RODUCT OR RELATED SOFTWARE OR TECHNOLOGY ARE STRICTLY PROHIBITED EXCEPT IN COMPLIANCE WITH ALL APPLICABLE EXPORT LAWS AND REGULATIONS 0RODUCT MAY INCLUDE PRODUCTS SUBJECT TO FOREIGN EXCHANGE AND FOREIGN TRADE CONTROL LAWS 0LEASE CONTACT YOUR 4/3()"! SALES REPRESENTATIVE FOR DETAILS AS TO ENVIRONMENTAL MATTERS SUCH AS THE 2O(3 COMPATIBILITY OF 0RODUCT 0LEASE USE 0RODUCT IN COMPLIANCE WITH ALL APPLICABLE LAWS AND REGULATIONS THAT REGULATE THE INCLUSION OR USE OF CONTROLLED SUBSTANCES INCLUDING WITHOUT LIMITATION THE %5 2O(3 $IRECTIVE 4/3()"! ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS 2011 Previous edition: BCE0001H 2011-9(1.5k)SO-DQ Semiconductor & Storage Products Company Website: http://www.semicon.toshiba.co.jp/eng Small and Medium Diodes 4EL &AX Toshiba Electronics Taiwan Corporation