http://www.semicon.toshiba.co.jp/eng
SEMICONDUCTOR
PRODUCT GUIDE
Small and Medium Diodes
2011-9
Small and Medium Diodes
Recently, many products ranging from computers and home appliances to automobiles and industrial
equipment have been driving the need for effective solutions to reduce size and weight.
Semiconductor requirements differ from application to application. Take power supplies for example,
which are being required to accommodate higher capacity in smaller dimensions. This increases the
temperature at which systems are operated.
To address this problem, Toshiba offers an extensive portfolio of small, high-efficiency diodes,
including Schottky barrier diodes (SBDs) featuring high-speed operation and low forward loss.
High-Efficiency Diodes (HEDs)
Zener Diodes
Diodes Schottky Barrier Diodes (SBDs)
Rectifier Diodes
Diodes for general rectification and
reverse-current protection
Super-Fast-Recovery Diodes (S-FRDs)
Diodes with a reverse voltage of 200 V to 1000 V and an average forward
current of 0.3 A to 5 A are available in small surface-mount packages.
Toshiba’s product portfolio also includes diodes with high ESD
performance ideal for automotive applications.
Zener diodes are available with a wide range of Zener voltage
specifications from 6.2 V to 390 V. They can be used for a wide range of
applications such as consumer, automotive and industrial electronics.
Toshiba offers low-loss SBDs fabricated with a next-generation process.
These SBDs will help increase the performance of equipment that
requires a small form factor and high efficiency, such as mobile devices
and switching power supplies.
SBDs with a reverse voltage of 20 V to 60 V and an average forward
current of 0.7 A to 10 A are available in small surface-mount packages.
You will find SBDs that best suit your applications.
2
..................................................................... 4
............................................ 5
................................................................. 8
................................................... 10
............... 10
................. 11
....... 12
................................................... 13
............... 13
............... 14
............................................................... 15
....... 17
................................ 18
...................................... 22
1. Key Features
2. New Small & Medium Diodes
3. Selection Guide
4. Product Characteristics
4.1 Schottky Barrier Diodes (SBDs) Single
Dual
4.2 Rectification Diodes Single, Dual
4.3 High-Speed Rectifiers
(1)
Super-Fast-Recovery Diodes (S-FRDs)
Single
(2) High-Efficiency Diodes (HEDs) Single
4.4 Zener Diodes
5.
Application Examples and Toshiba’s Recommended Diodes
6. Packaging and Packing Information
7. Symbols, Terms and Definitions
This brochure contains information on small and medium diodes only.
For switching diodes, small-signal Schottky barrier diodes and ESD
protection diodes, see the following brochure or our homepage:
◆ Homepage http://www.semicon.toshiba.co.jp/eng
◆ Brochure
General-Purpose Small-Signal Surface-Mount Devices
3
1. Key Features
▼
Voltage rating: VRRM = 400 V to 800 V
▼
Current rating: IF(AV) = 0.3 A to 2 A
▼
Diodes with high ESD performance are available.
2Rectification Diodes
(Diodes for General Rectification and Reverse-Current Protection)
High-Efficiency Diodes (HEDs)
▼
Voltage rating: VRRM = 400 V, 600 V, 800 V, 900 V, 1000 V
▼
Current rating: IF(AV) = 0.5 A to 2 A
▼
High-speed switching: Reverse recovery time (trr) 100 ns
Super-Fast-Recovery Diodes (S-FRDs)
4High-Efficiency Diodes (HEDs)
▼
Voltage rating: VRRM = 20 V, 30 V, 40 V, 60 V
▼
Current rating: IF(AV) = 0.7 A to 10 A
▼
Peak forward voltage: VFM = 0.32 V typ. (0.37 V max) ............ VRRM = 30 V
(Shown only as examples) VFM = 0.35 V typ. (0.39 V max) ............ VRRM = 30 V
VFM = 0.42 V typ. (0.45 V max) ............ VRRM = 30 V
VFM = 0.48 V typ. (0.55 V max) ............ VRRM = 40 V
VFM = 0.52 V typ. (0.58 V max) ............ VRRM = 60 V
Schottky Barrier Diodes (SBDs)
1Schottky Barrier Diodes (SBDs)
▼
Vz = 6.2 V to 390 V
▼
Power dissipation: P = 0.7 W, 1.0 W, 2.0 W (S-FLATTM and M-FLATTM packages)
▼
Available in a bidirectional configuration for diodes with VZ = 16 V (M-FLATTM package; P = 1.0 W).
5Zener Diodes
3Super-Fast-Recovery Diodes (S-FRDs)
▼
Voltage rating: VRRM = 200 V, 300 V, 400 V
▼
Current rating: IF(AV) = 0.5 to 5 A
▼
High-speed switching: Reverse recovery time (trr) 35 ns or 50 ns
4
2. New Small & Medium Diodes
Lead
Lead
Chip Epoxy resin
Footprint and Thermal Resistance
Glass-epoxy board: Board size = 50 mm , Solder land = 6 mm (Except L-FLATTM)
<SBD>
I
F(AV)
= 0.7 to 1.5 A
V
RRM
= 20 to 60 V
<SBD>
IF(AV) = 1.0 to 3.0 A
VRRM = 20 to 60 V
<HED>
IF(AV) = 0.5 to 1.0 A
VRRM = 200 V
<SBD>
IF(AV) = 1.0 to 5.0 A
VRRM = 30 to 60 V
<HED>
IF(AV) = 1.0 to 3.0 A
V
RRM
= 200 to 400 V
<SBD>
IF(AV) = 10 A
VRRM = 30 to 60 V
<HED>
IF(AV) = 3.0 to 5.0 A
VRRM = 200 to 400 V
US-FLAT
S-FLAT
M-FLAT
L-FLAT
50 mm
50 mm
6 mm
6 mm
160
150
140
130
120
110
100
90
80
70
60 0
Thermal Resistance (˚C/W)
5 10 15
Footprint Area (mm2)
20 25 30 35
(Ta = 25°C)
2.4 2.6
3.35
4.0 5.5
8.2
2.4 3.8
4.7
1.6 2.6
3.5
1.25 1.9
2.5
Unit: mm Unit: mm Unit: mm Unit: mm Unit: mm
Thickness:
0.6 typ.
Thickness:
0.98 typ.
Thickness:
0.98 typ.
Thickness:
1.8 typ.
Thickness:
0.98 typ.
Toshiba has been working to develop the most compact surface-mount packages which allow communication equipment to be miniaturized.
Toshiba has expanded its product portfolio with Zener diodes with a power dissipation of 1 W and a Zener voltage of 68 V to 390 V.
▼
CMZB Series (Zener diodes in an M-FLATTM Package)
The HMG02, a new addition to the portfolio of the HMG Series, contains two diodes in an HM-FLAT package.
Part Number Zener Voltage, Vz (V)
Zener Characteristics
CMZB68
CMZB75
CMZB82
CMZB100
CMZB110
CMZB180
CMZB150
Min
61.2
67.5
73.8
90
99
162
135
Typ.
68
75
82
100
110
180
150
Max
74.8
82.5
90.2
110
121
198
165
Measurement
Current
IZ (mA)
4
4
3
3
3
1.5
2
Part Number Zener Voltage, Vz (V)
Zener Characteristics
CMZB200
CMZB220
CMZB240
CMZB270
CMZB300
CMZB390
CMZB330
Min
180
198
216
243
270
351
297
Typ.
200
220
240
270
300
390
330
Max
220
242
264
297
330
429
363
Measurement
Current
IZ (mA)
1.5
0.5
0.5
0.5
0.5
0.5
0.5
Surface-Mount Package Trend for Diodes
Part Number VRRM (V) IF(AV) (A) IFSM (A) Tj(˚C) Tstg (˚C) IRRM (μA) VFM (V)
Absolute Maximum Ratings Electrical Characteristics (Max)
@IFM (A)
HMG02 400 0.7 10 175 –40 to 175 10 1.0 0.5
▼
HMG Series (Diodes for General Rectification and Reverse-Current Protection in an HM-FLAT Package)
The FLAT packages feature reduced wire inductance and resistance and
an enhanced thermal property compared to wire-bonded packages.
■ Internal Structure of FLAT Packages
Note: Dual diode. VRRM,IF(AV),IFSM,IRRM and VFM are specified per diode.
Small Flat Package Middle Flat Package Large Flat Package Hybrid Middle Flat
Package
Ultra-Small Flat
Package
Typical product: CUS01, CUS10I30A Typical product: CRS01, CRS10I30A Typical product: CMS01, CMS10I30A Typical product: CLS01 Typical product: HMG01
US-FLATTM S-FLATTM M-FLATTM L-FLATTM HM-FLAT
FLAT Package Series
New Diodes
5
2. New Small & Medium Diodes
IF-VFIR-Tj (Typ.) VR = 30 V
10
1
0.10.0 0.2 0.4 0.6
Forward Current, IF (A)
100
10
1
0.1
0.0001
0.01
0.001
Reverse Current, IR (mA)
Forward Voltage, VF (V)
0.8 1.0 0 20 40 60 80 100 120 140
Junction Temperature, Tj (˚C)
CRS10I30A
CRS01 (Low-VF)
CRS03 (Low-IR)
CRS10I30A
CRS01 (Low-VF)
CRS03 (Low-IR)
Tj = 25˚C
Pulse test
New SBDs
1000
100
10
1
IRRM(μA)@VRRM = 30 V
VFM(V)@IF = 0.7 A
0.25 0.3 0.35 0.4 0.45 0.5
Conventional SBDs
Pulse test
Starting with the new SBD series, the product naming conventions have been changed as shown below.
Product names denote packaging, current rating, voltage rating and go on.
▼
Product Naming Conventions
▼
Forward Voltage (VF) Curves (Example)
▼
Reverse Leakage Current (IR) Curves (Example)
▼
Tradeoff Relationship between the Forward
Voltage and Reverse Leakage Current (Example)
Toshiba now offers small to medium Schottky barrier diodes (SBDs) fabricated with a next-generation process.
The second-generation SBD portfolio now consists of 23 SBDs with 17 new devices added. Owing to low peak forward voltage
(VFM) and low peak repetitive forward voltage (IRRM) characteristics, these SBDs provide low power loss, help reduce the size and
improve the power efficiency of mobile handsets, switching power supplies, etc., thereby improving their overall performance.
▼
Voltage rating: VRRM = 30 V, 40 V
▼
Current rating: IF(AV) = 1 A to 3 A
▼
Peak forward voltage (Typical characteristics: CRS10I30A)
VFM = 0.35 V typ. (0.39 V max (@IFM = 0.7 A))
▼
Small surface-mount packages (US-FLATTM, S-FLATTM, M-FLATTM)
New Series of Schottky Barrier Diodes
CRS 10
I
30 A
(1) (2) (3) (4) (5)
Product Naming Conventions
(1) Toshiba Schottky barrier diode/package style
CRS: S-FLAT package
CMS: M-FLAT package
CUS: US-FLAT package
(2) Average forward current, IF(AV)
Example: 10: 1.0 A
(3) Product feature
I
:
Low forward voltage & low leakage current (New SBD series)
F: Low forward voltage
R: Low leakage current
(4) Reverse voltage, VRRM
Example: 30: 30 V
(5) Suffix that indicates an additional feature
New New
6
▼
Product Lineup
Part Number VRRM (V) IF(AV) (A) IFSM (A) Tj(˚C) Tstg (˚C) IRRM (mA) VFM (V)
Absolute Maximum Ratings
Package Electrical Characteristics (Max)
@IFM (A)
CUS10I30A
CUS15I30A
CUS10I40A
CRS10I30A
CRS10I30B
CRS10I30C
CRS15I30A
CRS15I30B
CRS20I30A
CRS20I30B
CRS30I30A
CRS10I40A
CRS10I40B
CRS15I40A
CRS20I40A
CRS20I40B
CMS10I30A
CMS20I30A
CMS30I30A
CMS10I40A
CMS15I40A
CMS20I40A
CMS30I40A
30
40
30
40
30
40
US-FLATTM
S-FLATTM
M-FLATTM
1.0
1.5
1.0
1.0
1.5
2.0
3.0
1.0
1.5
2.0
1.0
2.0
3.0
1.0
1.5
2.0
3.0
20
20
20
20
20
30
20
30
20
30
30
20
25
20
20
25
30
30
30
25
25
25
25
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
–55 to 150
–55 to 150
–55 to 150
–55 to 150
–55 to 150
–55 to 150
–55 to 150
–55 to 150
–55 to 150
–55 to 150
–55 to 150
–55 to 150
–55 to 150
–55 to 150
–55 to 150
–55 to 150
–55 to 150
–55 to 150
–55 to 150
–55 to 150
–55 to 150
–55 to 150
–55 to 150
0.06
0.06
0.06
0.06
0.06
0.10
0.06
0.10
0.06
0.10
0.10
0.06
0.10
0.06
0.06
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.39
0.46
0.49
0.39
0.42
0.36
0.46
0.40
0.49
0.45
0.49
0.49
0.45
0.55
0.60
0.52
0.36
0.45
0.49
0.45
0.49
0.52
0.55
0.7
1.5
0.7
0.7
1.0
1.0
1.5
1.5
2.0
2.0
3.0
0.7
1.0
1.5
2.0
2.0
1.0
2.0
3.0
1.0
1.5
2.0
3.0
New
New
New
New
New
New
New
New
New
New
New
New
New
New
New
New
New
New
7
3. Selection Guide
♦: Dual (Two separate diodes) : IF(DC) = 3A
: AEC-Q101-qualified at Tj = 175°C ✽: Designed for strobe discharge applications. ♦: Dual ★: High ESD protection
▼
Diodes for General Rectification and Reverse-Current Protection
VS-6
HM-FLAT
S-FLATTM
S-FLATTM
M-FLATTM
M-FLATTM
TPC6K01♦
CMG02
CRG02
CRG07
HMG01♦
HMG02♦
CRG03
CRG09★
400 V
CMC02✽
CMG05
CMG07
CRG04
CMG03
600 V
CMG06
CMG08
CRG05
800 V
5
7
2
2
3
3
0.3 A
1 A
0.7 A
0.5 A
2 A
Rectification Diodes
Schottky Barrier Diodes (SBDs)
30 V20 V 40 V 60 V
Peak Repetitive Reverse Voltage
Package Package
Number
Reference
Page
10
10
10
10
10
10
10
11
11
11
11
11
11
11
12
CUS03
CUS10I40A
CRS04
CRS10I40A
CRS10I40B
CMS10
CMS10I40A
CRS15I40A
CMS15I40A
CRS20I40A
CRS20I40B
CMS11
CMS20I40A
CMS16
CMS19
CMS21
CMS30I40A
CLS02
CUS04
CRS12
CRS13
CMS14
CMS15
CMS20
CLS03
1 A
3 A
1.5 A
2 A
0.7 A
5 A
10 A
CUS01
CUS02
CUS10I30A
CRS01
CRS03
CRS05
CRS11
CRS10I30A
CRS10I30B
CRS10I30C
CMS08
CMS09
CMS10I30A
TPCF8E02♦
CUS15I30A
CRS08
CRS09
CRS15I30A
CRS15I30B
CRS14
CRS20I30A
CRS20I30B
CMS06
CMS07
CMS17
CMS20I30A
CRS15
CRS30I30A
CMS01
CMS03
CMS18
CMS30I30A
CMS04
CMS05
CLS01
US-FLATTM
US-FLATTM
S-FLATTM
M-FLATTM
VS-8
US-FLATTM
S-FLATTM
M-FLATTM
S-FLATTM
M-FLATTM
S-FLATTM
M-FLATTM
M-FLATTM
L-FLATTM
CUS05
CUS06
CRS06
1
1
2
3
6
1
2
3
2
3
3
3
4
2
Average Forward
Current
Peak Repetitive Reverse Voltage
Package Package
Number
Reference
Page
Average Forward
Current
8
Zener Diodes
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
Package
Power Dissipation
Package Number
Reference Page
Package Number
Reference Page
CRY62
CRY68
CRY75
CRY82
CRY91
CRZ10
CRZ11
CRZ12
CRZ13
CRZ15
CRZ16
CRZ18
CRZ20
CRZ22
CRZ24
CRZ27
CRZ30
CRZ33
CRZ36
CMZB12
CMZB13
CMZB15
CMZB16
CMZB18
CMZB20
CMZB22
CMZB24
CMZB27
CMZB30
CMZB33
CMZB36
CMZ12
CMZ13
CMZ15
CMZ16
CMZ18
CMZ20
CMZ22
CMZ24
CMZ27
CMZ30
CMZ33
CMZ36
0.7 W
S-FLATTM
2 W
VZ(V)
▼
Zener Diodes
▼
Bidirectional Zener Diode
Power Dissipation Package Package Number Reference Page
VZ(V)
Part Number
CMZM16 1 W M-FLATTM 16
▼
High-Efficiency Diodes (HEDs)
200 V 300 V 400 V
CMH05A
CMH05
CMH08A
CMH08
CMH02A
CMH02
CLH03
CLH07
CRH02
CRH01
CMH04
CMH07
CMH01
CLH01
CLH05
CLH02
CLH06
S-FLATTM
S-FLATTM
M-FLATTM
M-FLATTM
M-FLATTM
L-FLATTM
L-FLATTM
35 ns
35 ns
35 ns
50 ns
35 ns
50 ns
35 ns
50 ns
35 ns
35 ns
5 A
2 A
3 A
1 A
0.5 A 2
3
4
2
3
3
3
✽: Designed for strobe charge applications
▼
Super-Fast-Recovery Diodes (S-FRDs)
600 V
0.5 A
1 A
2 A
100 ns
100 ns
100 ns
100 ns
S-FLATTM
M-FLATTM
M-FLATTM
M-FLATTM
CRF03(0.7 A)
CMF02
CMF01
800 V
CRF02✽
CMF04
900 V
CMF03
1000 V
CMF05
Super-Fast-Recovery Diodes (S-FRDs) and High-Efficiency Diodes (HEDs)
13
14
151615151615
16
3
1 W
M-FLATTM
Single Type
Peak Repetitive Reverse Voltage
Package
Reverse Recovery
Time (Max)
Package
Number
Reference
Page
Average Forward
Current
Peak Repetitive Reverse Voltage
Package
Reverse Recovery
Time (Max)
Package
Number
Reference
Page
Average Forward
Current
23
39
43
47
51
53
68
75
82
100
110
150
180
200
220
240
270
300
330
390
Package
Power Dissipation
CRZ39
CRZ43
CRZ47
CMZB39
CMZB43
CMZB47
CMZB51
CMZB53
CMZB68
CMZB75
CMZB82
CMZB100
CMZB110
CMZB150
CMZB180
CMZB200
CMZB220
CMZB240
CMZB270
CMZB300
CMZB330
CMZB390
CMZ39
CMZ43
CMZ47
CMZ51
CMZ53
0.7 W
S-FLATTM
2 W
VZ(V)
1 W
M-FLATTM
23
9
4. Product Characteristics
Part Number Absolute Maximum Ratings Electrical Characteristics (Max)
Conditions
Tj (˚C) Tstg (˚C)
IRRM (mA)
VFM (V)
C
j
(pF) (Typ.)
@IFM (A)
VR = 10 V,
f = 1 MHz
VR = 10 V,
f = 1 MHz
VRRM (V) IF(AV) (A)
0.37
0.45
0.37
0.45
0.39
0.46
0.52
0.49
0.58
0.36
0.37
0.45
0.45
0.36
0.39
0.42
0.36
0.36
0.46
0.46
0.40
0.49
0.49
0.45
0.52
0.49
0.49
0.49
0.45
0.55
0.60
0.52
0.58
0.55
0.7
0.7
0.7
0.7
0.7
1.5
0.7
0.7
0.7
1.0
0.7
0.7
1.0
1.0
0.7
1.0
1.0
1.5
1.5
1.5
1.5
2.0
2.0
2.0
3.0
3.0
0.7
0.7
1.0
1.5
2.0
2.0
1.0
1.0
40
40
40
40
50
50
45
35
38
60
40
40
60
60
50
50
82
90
90
50
82
90
50
82
90
82
47
35
62
35
35
62
40
40
125
150
125
150
150
150
150
150
150
125
125
150
150
125
150
150
150
125
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–55 to 150
–55 to 150
–40 to 150
–55 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–55 to 150
–55 to 150
–55 to 150
–40 to 150
–40 to 150
–55 to 150
–55 to 150
–40 to 150
–55 to 150
–55 to 150
−40 to 150
−55 to 150
−40 to 150
−55 to 150
−55 to 150
−55 to 150
−55 to 150
−55 to 150
−40 to 150
−40 to 150
1.0
0.03
1.5
0.1
0.06
0.06
0.1
0.06
0.1
1
1.5
0.1
1.5
0.06
0.06
0.10
1
0.05
0.06
0.10
0.05
0.06
0.10
0.05
0.10
0.1
0.06
0.10
0.06
0.06
0.10
0.1
0.05
20
20
30
30
30
30
40
40
60
20
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
40
40
40
40
40
40
60
60
1.0
1.0
1.0
1.0
1.0
1.5
0.7
1.0
0.7
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.5
1.5
1.5
1.5
2.0
2.0
2.0
3.0
3.0
1.0
1.0
1.0
1.5
2.0
2.0
1.0
1.0
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
30
30
30
20
30
30
20
30
30
30
20
20
25
20
20
25
20
20
IFSM (A)
Package
Single
4.1 Schottky Barrier Diodes (SBDs)
▼
Voltage rating: VRRM = 20 V, 30 V, 40 V, 60 V
▼
Current rating: IF(AV) = 0.7 A to 10 A
▼
Available in surface-mount packages.
CUS05
CUS06
CUS01
CUS02
CUS10I30A
CUS15I30A
CUS03
CUS10I40A
CUS04
CRS06
CRS01
CRS03
CRS05
CRS11
CRS10I30A
CRS10I30B
CRS10I30C
CRS08
CRS09
CRS15I30A
CRS15I30B
CRS14
CRS20I30A
CRS20I30B
CRS15
CRS30I30A
CRS04
CRS10I40A
CRS10I40B
CRS15I40A
CRS20I40A
CRS20I40B
CRS12
CRS13
: IRRM = 5 μA Max (VR = 5 V) : IF(DC) = 3 A
S-FLAT
TM
US-FLAT
TM
10
Single
Tj (˚C) Tstg (˚C) IRRM (mA) VFM (V)
C
j
(pF
) (Typ.)
@IFM (A)
VR = 10 V
f = 1 MHz
VRRM (V) IF(AV) (A)
0.49 1.0 54150 –40 to 150 0.130 1.0 7
IFSM (A)
Package
Dual
VS-8
TPCF8E02
Part Number Absolute Maximum Ratings Electrical Characteristics (Max)
Conditions
Tj (˚C) Tstg (˚C)
IRRM (mA)
VFM (V)
C
j
(pF) (Typ.)
@IFM (A)
VR = 10 V,
f = 1 MHz
VR = 10 V,
f = 1 MHz
VRRM (V) IF(AV) (A)
0.37
0.45
0.36
0.37
0.45
0.48
0.45
0.37
0.45
0.64
0.49
0.37
0.45
0.55
0.45
0.49
0.55
0.52
0.55
0.68
0.55
0.58
0.58
0.72
0.47
0.55
0.58
1.0
1.0
1.0
2.0
2.0
2.0
2.0
3.0
3.0
3.0
3.0
5.0
5.0
1.0
1.0
1.5
2.0
2.0
3.0
3.0
3.0
2.0
3.0
3.0
10
10
10
70
70
82
130
130
90
82
190
190
170
82
330
330
50
62
62
95
62
95
125
62
77
102
105
530
420
345
125
150
150
125
150
150
150
125
150
150
150
125
150
150
150
150
150
150
150
150
150
150
150
150
125
125
125
–40 to 150
–40 to 150
–55 to 150
–40 to 150
–40 to 150
–40 to 150
–55 to 150
–40 to 150
–40 to 150
–40 to 150
–55 to 150
–40 to 150
–40 to 150
–40 to 150
–55 to 150
–55 to 150
–40 to 150
–55 to 150
–40 to 150
–40 to 150
–55 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
1.5
0.5
0.10
3.0
0.5
0.1
0.10
5.0
0.5
0.01
0.10
8.0
0.8
0.5
0.10
0.10
0.5
0.10
0.2
0.01
0.10
0.2
0.3
0.01
1.0
1.0
1.0
30
30
30
30
30
30
30
30
30
30
30
30
30
40
40
40
40
40
40
40
40
60
60
60
30
40
60
1.0
1.0
1.0
2.0
2.0
2.0
2.0
3.0
3.0
3.0
3.0
5.0
5.0
1.0
1.0
1.5
2.0
2.0
3.0
3.0
3.0
2.0
3.0
3.0
10
10
10
25
25
30
40
40
30
30
40
40
40
30
70
70
25
25
25
30
25
30
40
25
40
60
40
100
100
100
IFSM (A)
L-FLAT
TM
Package
Part Number Absolute Maximum Ratings Electrical Characteristics (Max)
Conditions
CMS08
CMS09
CMS10I30A
CMS06
CMS07
CMS17
CMS20I30A
CMS01
CMS03
CMS18
CMS30I30A
CMS04
CMS05
CMS10
CMS10I40A
CMS15I40A
CMS11
CMS20I40A
CMS16
CMS19
CMS30I40A
CMS14
CMS15
CMS20
CLS01
CLS02
CLS03
: IRRM = 5 μA Max (VR = 5 V) : IF(DC) = 3 A
Note: VRRM,IF(AV),IFSM,IRRM,VFM and Cj are specified per diode.
▼
Marking
US-FLATTM
Example: CUS01 Example: CRS01
Example: CMS01 Example: CLS01 Example: TPCF8E02
S-FLATTM
M-FLATTM
Example: CRS10I30A
S-FLATTM
L-FLATTM VS-8
M-FLAT
TM
1
Cathode mark
S1
Cathode mark
S1
Cathode mark
S01
FBB
Pin 1
SF
Cathode mark
11
4. Product Characteristics
4.2 Rectification Diodes
(Diodes for General Rectification and Reverse-Current Protection)
▼
Voltage rating: VRRM = 400 V,600 V,800 V
▼
Current rating: IF(AV) = 0.3 A to 2 A
▼
Available in surface-mount packages.
400
400
400
400
600
800
400
400
400
400
600
600
600
Part NumberPackage
S-FLATTM
VRRM (V) IF(AV) (A) IFSM (A) Tj(˚C) Tstg (˚C) IRRM (μA) VFM (V)
0.7
0.7
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
1.0
1.0
2.0
15
15
15
15
15
15
30
15
30
80
15
30
80
150
175
150
150
150
150
150
150
150
150
150
150
150
–40 to 150
–40 to 175
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
10
10
10
10
10
10
10
10
10
10
10
10
10
1.1
1.1
1.1
1.1
1.1
1.2
1.0
1.1
1.1
1.1
1.1
1.1
1.1
0.7
0.7
0.7
0.7
1.0
1.0
1.0
1.0
1.0
2.0
1.0
1.0
2.0
Absolute Maximum Ratings Electrical Characteristics (Max)
Part NumberPackage Absolute Maximum Ratings Electrical Characteristics (Max)
@IFM (A)
Example: CRG04 Example: CMG02 Example: TPC6K01 Example: HMG01
CRG02
CRG07
CRG03
CRG09★
CRG04
CRG05
CMC02✽
CMG05
CMG07
CMG02
CMG06
CMG08
CMG03
VS-6
HM-FLAT
VRRM (V) IF(AV) (A) IFSM (A) Tj(˚C) Tstg (˚C) IRRM (μA) VFM (V)
400 0.3 3 150 –55 to 150 10 1.1 0.3
400 0.5 10 150 –40 to 150 10 1.0 0.5
@IFM (A)
Note: IF(AV), IFSM, IRRM and VFM are specified per diode.
TPC6K01
HMG01
400 0.7 10 175 –40 to 175 10 1.0 0.5HMG02
M-FLATTM VS-6 HM-FLAT
Single
: AEC-Q101-qualified at Tj = 175˚C ★: High ESD protection ✽: Designed for strobe discharge applications
Dual
▼
Marking
S-FLATTM
M-FLATTM
Cathode mark
G4
Cathode mark
G2
R2A
Pin 1
GG1
Pin 1
12
4.3 High-Speed Rectifiers
Super-Fast-Recovery Diode (S-FRDs)
▼
Voltage rating: VRRM = 600 V, 800 V, 900 V, 1000 V
▼
Current rating: IF(AV) = 0.5 A to 2 A
▼
High-speed switching: Reverse recovery time (trr)≤ 100 ns
High-Efficiency Diode (HEDs)
▼
Voltage rating: VRRM = 200 V, 300 V, 400 V
▼
Current rating: IF(AV) = 0.5 to 5 A
▼
High-speed switching: Reverse recovery time (trr)≤ 35 ns or ≤ 50 ns
▼
Available in surface-mount packages.
(1) Super-Fast-Recovery Diodes (S-FRDs)
CRF02✽
CRF03
Part Number Absolute Maximum Ratings Electrical Characteristics (Max)
Conditions
Tj (˚C) Tstg (˚C) IRRM (μA) VFM (V) trr (ns)
@IFM (A)
CMF01
CMF02
CMF04
CMF03
CMF05
IF = 1 A,
di/dt = –30 A/μs
VRRM (V) IF(AV) (A)
3.0
2.0
0.5
0.7
IF = 1 A,
di/dt = –30 A/μs
100
100
150
150
–40 to 150
–40 to 150
50
50
800
600
0.5
0.7
10
10
IFSM (A)
2.0
2.0
2.5
2.5
2.7
2.0
1.0
0.5
0.5
0.5
100
100
100
100
100
150
150
150
125
125
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
50
50
50
50
50
600
600
800
900
1000
2.0
1.0
0.5
0.5
0.5
30
10
10
10
10
✽: Designed for strobe discharge applications
M-FLATTM
S-FLATTM
Package
Single
13
4. Product Characteristics
S-FLATTM
Example: CRF02 Example: CMF01
M-FLATTM
■S-FRDs
S-FLATTM
Example: CRH01 Example: CMH01 Example: CLH01
M-FLATTM L-FLATTM
■HEDs
(2) High-Efficiency Diodes (HEDs)
Part Number Absolute Maximum Ratings Electrical Characteristics (Max)
Conditions
Tj (˚C) Tstg (˚C) IRRM (μA) VFM (V) trr (ns)
@IFM (A)
IF = 1 A,
di/dt = –30 A/μs
IF= 2 A,
di/dt = –50 A/μs
VRRM (V) IF(AV) (A)
IF = 1 A,
di/dt = –30 A/μs
0.95
0.98
0.5
1.0
35
35
150
150
–40 to 150
–40 to 150
10
10
200
200
0.5
1.0
10
15
CRH02
CRH01
CMH04
CMH07
CMH01
CMH05
CMH05A
CMH08
CMH08A
CMH02
CMH02A
CLH01
CLH05
CLH02
CLH06
CLH03
CLH07
IFSM (A)
0.98
0.98
0.98
1.3
1.8
1.3
1.8
1.3
1.8
0.98
0.98
1.3
1.3
1.8
1.8
1.0
2.0
3.0
1.0
1.0
2.0
2.0
3.0
3.0
3.0
5.0
3.0
5.0
3.0
5.0
35
35
35
50
35
50
35
50
35
35
35
35
35
35
35
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
–40 to 150
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
200
200
200
400
400
400
400
400
400
200
200
300
300
400
400
1.0
2.0
3.0
1.0
1.0
2.0
2.0
3.0
3.0
3.0
5.0
3.0
5.0
3.0
5.0
20
40
40
20
10
30
20
40
30
60
100
50
60
30
50
M-FLATTM
L-FLATTM
S-FLATTM
Package
Single
▼
Marking
F2
Cathode mark
F1
Cathode mark
H1
Cathode mark
H1
Cathode mark
H01
14
CRY62 and CRZ10 Series (S-FLATTM)
4.4 Zener Diodes
▼
VZ = 6.2 V to 390 V
▼
Power dissipation: P = 0.7 W, 1.0 W, 2.0 W
(S-FLATTM and M-FLATTM packages)
▼
Available in a bidirectional configuration for diodes with VZ = 16 V
(M-FLATTM package; P = 1.0 W). S-FLATTM M-FLATTM
▼
Packages
Zener Voltage
VZ (V)
Temperature Coefficient
of Zener Voltage
αT
(mV/˚C)
Dynamic
Resistance
rd (Ω)
Measurement
Current
IZ
(mA)
Measurement
Voltage
VR
(V)
Measurement
Current
IF
(A)
Zener Characteristics
5.6
6.2
6.8
7.4
8.2
9.0
9.9
10.8
11.7
13.5
14.4
16.2
18.0
19.8
21.6
24.3
27.0
29.7
32.4
35.1
38.7
42.3
700
700
700
700
700
700
700
700
700
700
700
700
700
700
700
700
700
700
700
700
700
700
Min Max Typ. Max Max MaxMaxTyp.
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
13.0
15.0
16.0
18.0
20.0
22.0
24.0
27.0
30.0
33.0
36.0
39.0
43.0
47.0
6.8
7.4
8.3
9.0
10.0
11.0
12.1
13.2
14.3
16.5
17.6
19.8
22.0
24.2
26.4
29.7
33.0
36.3
39.6
42.9
47.3
51.7
60
60
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
35
40
65
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
9
8
7
6
2
3
4
4
5
6
7
8
9
11
12
14
16
18
20
23
25
26
28
30
33
38
3
4
5
6
8
9
11
13
14
17
19
23
26
28
32
36
40
41
45
48
53
60
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
3.0
3.0
4.5
4.9
5.5
6.0
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
17.0
19.0
21.0
26.4
28.8
31.2
34.4
37.6
Part Number
CRY62
CRY68
CRY75
CRY82
CRY91
CRZ10
CRZ11
CRZ12
CRZ13
CRZ15
CRZ16
CRZ18
CRZ20
CRZ22
CRZ24
CRZ27
CRZ30
CRZ33
CRZ36
CRZ39
CRZ43
CRZ47
Power
Dissipation
(mW)
Ta = 25˚C
10.8
11.7
13.5
14.4
16.2
18.0
19.8
21.6
24.3
27.0
29.7
32.4
35.1
38.7
42.3
45.9
47.7
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
53
13.2
14.3
16.5
17.6
19.8
22.0
24.2
26.4
29.7
33.0
36.3
39.6
42.9
47.3
51.7
56.1
58.3
30
30
30
30
30
30
30
30
30
30
30
30
35
40
65
65
85
10
10
10
10
10
10
10
10
10
10
10
9
8
7
6
6
5
8
9
11
12
14
16
18
20
23
25
26
28
30
33
38
43
49
13
14
17
19
23
26
28
32
36
40
41
45
48
53
60
68
77
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
8
9
10
11
13
14
16
17
19
21
26.4
28.8
31.2
34.4
37.6
40.8
42.4
CMZ12
CMZ13
CMZ15
CMZ16
CMZ18
CMZ20
CMZ22
CMZ24
CMZ27
CMZ30
CMZ33
CMZ36
CMZ39
CMZ43
CMZ47
CMZ51
CMZ53
CMZ12 Series (M-FLATTM)Ta = 25˚C
Forward
Voltage
VF
(V)
Reverse
Current
IR
(μA)
Zener Voltage
VZ (V)
Temperature Coefficient
of Zener Voltage
αT
(mV/˚C)
Dynamic
Resistance
rd (Ω)
Measurement
Current
IZ
(mA)
Measurement
Voltage
VR
(V)
Measurement
Current
IF
(A)
Zener Characteristics
Min Max Typ. Max Max MaxMaxTyp.
Part Number
Power
Dissipation
(W)
Forward
Voltage
VF
(V)
Reverse
Current
IR
(μA)
15
4. Product Characteristics
▼
Marking
CRY62, CRZ10 Series
Example: CRY75 Example: CRZ13 Example: CMZB18Example: CMZ24 Example: CMZM16
CMZB12 SeriesCMZ12 Series CMZM16 Series
Zener Voltage
VZ (V)
Measurement
Current
IZ
(mA)
Measurement
Voltage
VR
(V)
Min Typ. Max
Zener Characteristics
Part Number
Power
Dissipation
(W)
CMZM16 14.41.0 16 17.6
Dynamic
Resistance
rd (Ω)
Max
30 10
Typ.
12
Max
19
Temperature Coefficient
of Zener Voltage
αT
(mV/˚C)
Reverse
Current
IR
(μA)
Max
10 11
CMZM16 Bidirectional Zener Diode Series (M-FLATTM)Ta = 25˚C
10.8
11.7
13.5
14.4
16.2
18.0
19.8
21.6
24.3
27.0
29.7
32.4
35.1
38.7
42.3
45.9
47.7
61.2
67.5
73.8
90
99
135
162
180
198
216
243
270
297
351
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
53
68
75
82
100
110
150
180
200
220
240
270
300
330
390
13.2
14.3
16.5
17.6
19.8
22.0
24.2
26.4
29.7
33.0
36.3
39.6
42.9
47.3
51.7
56.1
58.3
74.8
82.5
90.2
110
121
165
198
220
242
264
297
330
363
429
30
30
30
30
30
30
30
30
30
30
30
30
35
40
65
65
85
120
150
170
300
300
450
500
500
5000
5000
5000
5000
5000
10000
10
10
10
10
10
10
10
10
10
10
10
9
8
7
6
6
5
4
4
3
3
3
2
1.5
1.5
0.5
0.5
0.5
0.5
0.5
0.5
8
9
11
12
14
16
18
20
23
25
26
28
30
33
38
43
49
57
66
71
87
96
136
161
170
200
215
243
270
296
350
13
14
17
19
23
26
28
32
36
40
41
45
48
53
60
68
77
90
104
113
138
152
210
254
269
309
343
385
428
473
555
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
8
9
10
11
13
14
16
17
19
21
26.4
28.8
31.2
34.4
37.6
40.8
42.4
54.4
60
65.6
80
88
120
144
160
176
192
216
240
264
312
CMZB12
CMZB13
CMZB15
CMZB16
CMZB18
CMZB20
CMZB22
CMZB24
CMZB27
CMZB30
CMZB33
CMZB36
CMZB39
CMZB43
CMZB47
CMZB51
CMZB53
CMZB68
CMZB75
CMZB82
CMZB100
CMZB110
CMZB150
CMZB180
CMZB200
CMZB220
CMZB240
CMZB270
CMZB300
CMZB330
CMZB390
Zener Voltage
VZ (V)
Temperature Coefficient
of Zener Voltage
αT
(mV/˚C)
Forward
Voltage
VF
(V)
Reverse
Current
IR
(μA)
Dynamic
Resistance
rd (Ω)
Measurement
Current
IZ
(mA)
Measurement
Voltage
VR
(V)
Measurement
Current
IF
(A)
Zener Characteristics
Min Max Typ. Max Max MaxMaxTyp.
Part Number
Power
Dissipation
(W)
CMZB12 Series (M-FLATTM)Ta = 25˚C
7.5
Cathode mark
13
Cathode mark
B
18
24
Cathode mark
16
16
5.
Application Examples and Toshiba’s Recommended Diodes
Applications Package Recommended Diodes
Reverse-battery and
reverse-current protection
DC-DC converters
US-FLATTM
S-FLATTM
M-FLATTM
S-FLATTM
M-FLATTM
CUS01, CUS02, CUS10I30A, CUS15I30A
CRS01, CRS03, CRS05, CRS06, CRS08, CRS09, CRS11, CRS14
CMS01, CMS03, CMS06, CMS07, CMS08, CMS09, CMS16
CRS03, CRS04, CRS05, CRS09, CRS13, CRS10I30A, CRS15I30A, CRS20I30A
CMS03, CMS05, CMS14, CMS15, CMS20I30A, CMS30I30A, CMS20I40A, CMS30I40A
Applications Package Recommended Diodes
Reverse-battery and
reverse-current protection
Surge absorbers
Flywheeling
MOSFET gate protection
DC-DC converters
S-FLATTM
M-FLATTM
S-FLATTM
M-FLATTM
S-FLATTM
M-FLATTM
S-FLATTM
M-FLATTM
M-FLATTM
CRG04, CRG05, CRG07, CRG09, CRG02, CRG03, HMG02
CMG02, CMG03, CMG05, CMG06, CMG07, CMG08
CRZ Series
CMZB Series, CMZ Series
CRH01, CRH02
CMH01, CMH04, CMH07
CRZ Series
CMZB Series, CMZ Series, CMZM16
CMS18, CMS19, CMS20
Notebook PCs
Automotive
DC-DC
Load Switch
45 W
15 V, 3 A
60 W
15 V, 4 A
1.5 V/1.5 A
1.8 V/1.5 A
3 V/5 A
5 V/5 A
Battery Charger
Main
Battery
Secondary
Battery
DC-DC Converter
Reverse-Current Protection
Load B
Battery
Reverse-Battery Protection MOSFET Gate Protection Circuit
Surge Absorber
Flywheel Diode
IC
Load A
ECU
Switching Circuit
AC Adapter
17
6. Packaging and Packing Information
Type: TE85 R or L
4000 pcs/reel
3000 pcs/reel
Type: TE85 R or L
Packing quantities:
Unit: mm
Land pattern dimensions for reference only
Package dimensions Tape dimensions
Reel dimensions
6.1 Surface-Mount Packages
Packing quantities:
Unit: mm
Land pattern dimensions for reference only
Package dimensions Tape dimensions
Reel dimensions
US-FLATTM
S-FLATTM
1
2
1.01 ± 0.05 1.94 ± 0.1
1.44 ± 0.1
1.75 ±0.1
8.0 ±0.1
3.5 ± 0.05
4.0 ± 0.1
4.0 ± 0.1
2.0 ± 0.05
R TypeL Type
ø1.5 +0.1
–0
ø1.05 ± 0.05
0.2 ± 0.05
0.7 ± 0.05
1.60 ± 0.1
1.97 ± 0.05
2.65 ± 0.1
9.0 ± 0.3
ø60 ± 1
13 ± 0.2
1.2 ± 0.51.2 ± 0.5
3 ± 0.2
ø180 ± 0.3
ø76
*2
18 min
4 ± 0.2
*1
5 ± 0.2
ø160
*1: 2 ± 0.2
*2: 4 ± 0.5
9.0 ± 0.3
ø60 ± 1
13 ± 0.2
1.2 ± 0.51.2 ± 0.5
3 ± 0.2
ø180 ± 0.3
ø76
*2
18 min
4 ± 0.2
*1
5 ± 0.2
ø160
*1: 2 ± 0.2
*2: 4 ± 0.5
0.65
4.0 ± 0.1
ø1.5 +0.1
–0
3.8 ±0.1
4.0 ± 0.1
0.2 ± 0.05
1.45 ± 0.1
0.65
R TypeL Type
1.75 ±0.1
1.9 ± 0.1
8.0 ±0.2
ø1.1 ± 0.1
1.9
2.0 0.5 0.8
0.8
1.1
2.8
1.2
1.2
18
3000 pcs/reel
M-FLATTM
2500 pcs/reel
L-FLATTM
Type: TE16 R or L
3
4
Type: TE12 R or L
Packing quantities:
Unit: mm
Land pattern dimensions for reference only
Package dimensions Tape dimensions
Reel dimensions
Packing quantities:
Unit: mm
Land pattern dimensions for reference only
Package dimensions Tape dimensions
Reel dimensions
12.0 ± 0.3
1.75 ± 0.15.5 ± 0.05
4.0 ± 0.1
2.0 ± 0.05
0.3 ± 0.05
1.5 ± 0.1
4.0 ± 0.1 1.25 ± 0.1
B
2 max 2 max
ø1.5 +0.1
- 0
L Type
R Type
2.7
A’
8.0 ± 0.1 4.0 ± 0.1
2.0 ± 0.1
B
A
R Type
L Type
ø2.05 ± 0.05
16.0 ± 0.3
1.75 ± 0.1
7.5 ± 0.1
ø1.5 + 0.1
– 0.0
8.9 ± 0.1
0.3 ± 0.05
2.3 ± 0.1
A’ A
B B’
4.4 ± 0.1
100 ± 1.0
330 ± 2.0
22
ø10
ø10
135
135
80
55
4
17.5 ± 0.5
2 ± 0.5
15 ± 0.2
13 ± 0.3
ø60 ± 1
13 ± 0.2
1.2 ± 0.51.2 ± 0.5
3 ± 0.2
ø180 ± 0.3
ø76
*2
18 min
4 ± 0.2
*1
5 ± 0.2
ø160
*1: 2 ± 0.2
*2: 4 ± 0.5
1.4 3.0 1.4
2.1
1.84.8
5.9
2.5
2.9
19
6. Packaging and Packing Information
3000 pcs/reel
4000 pcs/reel
VS-6
VS-8
Type: TE85L
5
6
6.1 Surface-Mount Packages
Type: TE85L
Packing quantities:
Unit: mm
Land pattern dimensions for reference only
Package dimensions Tape dimensions
Reel dimensions
Packing quantities:
Unit: mm
Land pattern dimensions for
reference only
Package dimensions Tape dimensions
Reel dimensions
8.0 ± 0.2
5.2 ± 0.2
3.3 ± 0.1
4.0 ± 0.1
2.0 ± 0.08
4.0 ± 0.1 1.55 ± 0.1
0.3 ± 0.05
1.4 ± 0.1
3.5 ± 0.1
ø1.1 ± 0.1
1.75 ± 0.1
2.75
BB’
A
A’
A
A’
B’
B
3.05 ± 0.1
L Type
ø1.5 + 0.1
– 0.0
5.0
11.4
9.0
ø180
ø60
2.2
2.1
8.0 ± 0.2
3.5 ± 0.1
2.75 1.75 ± 0.1
0.2 ± 0.05
0.95 ± 0.1
A
A’ A’
A
BB’
B’B
4.0 ± 0.1
2.0 ± 0.1
ø1.5 + 0.1
– 0.0
ø1.1 ± 0.1 4.0 ± 0.1
3.1 ± 0.1
5.0
11.4
9.0
φ180
φ60
1.0
2.4
0.95 0.95
0.8 0.80.6
1.50
0.65(6X)
0.40(8X)
0.65(8X)
1. Anode 1
2. NC
3. Anode 2
4. Cathode 2
5. NC
6. Cathode 1
4
65
213
1. Anode 1
2. NC
3. NC
4. Anode 2
5. Cathode 2
6. Cathode 2
7. Cathode 1
8. Cathode 1
1
8
2 3
7
4
65
20
3000 pcs/reel
HM-FLAT
7
Type: TE85L
Packing quantities:
Unit: mm
Land pattern dimensions for reference only
Package dimensions Tape dimensions
Reel dimensions
4.0 ± 0.1
AA’
B’
ø1.5 +0.1
0
ø1.05 ± 0.05
B
2.0 ± 0.05
3.5 ± 0.05
1.75 ± 0.1
8.0 ± 0.1
0.20 ± 0.05
3.50 ± 0.05
3.6
0.65
1.13 ± 0.05
B – B’
2.70 ± 0.05
2.85
1.13 ± 0.05
0.65
A – A’ 9.0 ± 0.3
ø6 ± 1
13 ± 0.2
1.2 ± 0.51.2 ± 0.5
3 ± 0.2
ø180 ± 0.3
ø76
*2
18 min
4 ± 0.2
*1
5 ± 0.2
ø160
*1: 2 ± 0.2
*2: 4 ± 0.5
1. Anode 1
2. Anode 2
3. Cathode 2
4. Cathode 1
3
4
12
1.0
0.8
3.0
1.4
A : Enlarged view
21
7. Symbols, Terms and Definitions
Symbol Term Definition
The maximum average current value of a half sine wave (180˚ conduction
angle) at the 50/60-Hz utility frequency that can flow in a diode under
specified conditions, or the average forward current value of a square wave
under specified conditions.
The non-repetitive maximum allowable peak current in one cycle of a 50-Hz
sine wave (180˚ conduction angle) that can flow in the forward direction of
a diode at a specified junction temperature. This rating applies only to
abnormal operation, which seldom occurs during the lifetime of the diode.
The junction temperature at which the reliability and lifetime of the device
can be guaranteed.
Ambient temperature range within which the device can be stored while
not operating.
The time required for the current to reach a specified reverse current
after instantaneous switching from forward to reverse.
The instantaneous maximum allowable value (peak value) of the reverse
voltage that can be applied repeatedly to a diode.
The voltage value when a specified Iz current flows in reverse between
the anode and cathode of a Zener diode.
The ratio of change in a Zener voltage to the corresponding change in a
specified current, Iz, in the Zener area.
The ratio of change in a Zener voltage to the corresponding change in a
junction temperature.
The maximum power dissipation under specified conditions.
When a forward voltage is applied to a diode under specified conditions,
the time required for the applied power to propagate across the whole
area of the diode.
The forward current under specified conditions.
Reverse voltage that is applied to a diode.
The reverse leakage current when a specified reverse voltage is applied
to a diode.
The non-repetitive peak reverse surge current that can flow in the reverse
direction of a diode under specified conditions. This rating applies only to
abnormal operation, which seldom occurs during the lifetime of the diode.
The junction capacitance when a reverse voltage is applied to a diode
under specified conditions.
Average forward current
Average output current
Non-repetitive peak surge
current
Storage temperature
Peak repetitive reverse
current
Zener voltage
Dynamic resistance
Temperature coefficient of
Zener voltage
Zener power dissipation
Forward recovery time
Peak forward current
Junction capacitance
Reverse voltage
Reverse current
Non-repetitive peak
reverse surge current
Peak forward voltage
Reverse recovery time
Junction temperature
Peak repetitive reverse
voltage
The maximum reverse leakage current value (peak value) when a
specified reverse voltage, VRRM, is applied.
The maximum value of voltage drop when a specified forward current,
IFM, flows.
The maximum average current value of a full sine wave (360˚ conduction
angle) at the 50/60-Hz utility frequency that can flow in a diode under
specified conditions.
IF(AV)
Io
VRRM
IFSM
Tj(max)
Tstg
IRRM
VFM
trr
VZ
rd
αT
Cj
VR
IR
IRSM
P
tfr
IFM
22
V
Web pages by product type
http://www.semicon.toshiba.co.jp/eng/
Product List Cross-Reference Search Parametric Search
V
New and hot products
Our Web site quickly delivers information
on new products.
Topics on new products SSD site
Right here and now! Toshiba Semiconductor
V
TOSHIBA Semiconductor & Storage Products Company
You can search for parts, based on
product types, specs, packages and so on. You can find Toshiba's parts functionally
equivalent to our competitors' by entering
their part number.
You can narrow your search, based on
functions, characteristics and so on.
Website: http://www.semicon.toshiba.co.jp/eng
Semiconductor & Storage Products Company
BCE0001I
Small and Medium Diodes
Previous edition: BCE0001H
2011-9(1.5k)SO-DQ
2011
OVERSEAS SUBSIDIARIES AND AFFILIATES
Toshiba America
Electronic Components, Inc.
s )RVINE(EADQUARTERS
4EL&AX
s "UFFALO'ROVE#HICAGO
4EL&AX
s $ULUTH!TLANTA
4EL&AX
s %L0ASO
4EL
s -ARLBOROUGH
4EL&AX
s 0ARSIPPANY
4EL&AX
s 3AN*OSE
4EL&AX
s 7IXOM$ETROIT
4EL&AX
s "LOOMINGTON
4EL&AX
s 3AN$IEGO
4EL&AX
Toshiba Electronics do Brasil Ltda.
4EL&AX
Toshiba Electronics Europe GmbH
s $àSSELDORF(EAD/FFICE
4EL&AX
s &RANCE"RANCH
4EL
s )TALY"RANCH
4EL&AX
s 3PAIN"RANCH
4EL&AX
s 5+"RANCH
4EL&AX
s 3WEDEN"RANCH
4EL&AX
Toshiba Electronics Asia (Singapore) Pte. Ltd.
4EL&AX
Toshiba Electronics Service (Thailand) Co., Ltd.
4EL&AX
Toshiba Electronics Trading (Malaysia) Sdn. Bhd.
s +UALA,UMPUR(EAD/FFICE
4EL&AX
s 0ENANG/FFICE
4EL&AX
Toshiba India Private Ltd.
4EL&AX
Toshiba Electronics Asia, Ltd.
s (ONG+ONG(EAD/FFICE
4EL&AX
s "EIJING/FFICE
4EL&AX
s #HENGDU/FFICE
4EL&AX
s 1INGDAO/FFICE
4EL&AX
Toshiba Electronics (Shenzhen) Co.,Ltd
4EL&AX
Toshiba Electronics (Shanghai) Co., Ltd.
s 3HANGHAI058)"RANCH
4EL&AX
s (ANGZHOU/FFICE
4EL&AX
s .ANJING/FFICE
4EL&AX
Toshiba Electronics (Dalian) Co., Ltd.
4EL&AX
Tsurong Xiamen Xiangyu Trading Co., Ltd.
4EL&AX
Toshiba Electronics Korea Corporation
s 3EOUL(EAD/FFICE
4EL&AX
s $AEGU/FFICE
4EL&AX
Toshiba Electronics Taiwan Corporation
s 4AIPEI(EAD/FFICE
4EL&AX
!SOF!PRIL 2011-9
4OSHIBA#ORPORATIONANDITSSUBSIDIARIESAND AFFILIATES COLLECTIVELY h4/3()"!v RESERVE THE RIGHT TO MAKE CHANGES TO THE INFORMATION IN THIS DOCUMENT ANDRELATEDHARDWARE
SOFTWAREANDSYSTEMSCOLLECTIVELYh0RODUCTvWITHOUTNOTICE
4HIS DOCUMENT AND ANY INFORMATION HEREIN MAY NOT BE REPRODUCED WITHOUT PRIOR WRITTEN PERMISSION FROM 4/3()"! %VEN WITH 4/3()"!S WRITTEN PERMISSION REPRODUCTION IS
PERMISSIBLEONLYIFREPRODUCTIONISWITHOUTALTERATIONOMISSION
4HOUGH4/3()"!WORKSCONTINUALLYTOIMPROVE0RODUCTgSQUALITYANDRELIABILITY0RODUCTCANMALFUNCTIONORFAIL#USTOMERSARERESPONSIBLEFORCOMPLYINGWITHSAFETYSTANDARDSAND
FORPROVIDINGADEQUATEDESIGNSANDSAFEGUARDSFORTHEIRHARDWARESOFTWAREANDSYSTEMSWHICHMINIMIZERISKANDAVOIDSITUATIONSINWHICHAMALFUNCTIONORFAILUREOF0RODUCTCOULD
CAUSE LOSS OF HUMAN LIFE BODILY INJURY OR DAMAGE TO PROPERTY INCLUDING DATA LOSS OR CORRUPTION "EFORE CUSTOMERS USE THE 0RODUCT CREATE DESIGNS INCLUDING THE 0RODUCT OR
INCORPORATETHE0RODUCT INTO THEIR OWN APPLICATIONS CUSTOMERS MUSTALSOREFER TO AND COMPLY WITH A THELATESTVERSIONS OF ALL RELEVANT 4/3()"! INFORMATION INCLUDINGWITHOUT
LIMITATION THIS DOCUMENT THE SPECIFICATIONS THE DATA SHEETS AND APPLICATION NOTES FOR 0RODUCT AND THE PRECAUTIONS AND CONDITIONS SET FORTH IN THE 4/3()"! 3EMICONDUCTOR
2ELIABILITY(ANDBOOKANDBTHEINSTRUCTIONSFORTHEAPPLICATIONWITHWHICHTHE0RODUCTWILLBEUSEDWITHORFOR#USTOMERSARESOLELYRESPONSIBLEFORALLASPECTSOFTHEIROWNPRODUCT
DESIGNORAPPLICATIONSINCLUDINGBUTNOTLIMITEDTOADETERMININGTHEAPPROPRIATENESSOFTHEUSEOFTHIS0RODUCTINSUCHDESIGNORAPPLICATIONSBEVALUATINGANDDETERMININGTHE
APPLICABILITYOFANYINFORMATION CONTAINEDINTHISDOCUMENTORINCHARTSDIAGRAMSPROGRAMSALGORITHMSSAMPLEAPPLICATIONCIRCUITSORANYOTHER REFERENCEDDOCUMENTSANDC
VALIDATINGALLOPERATINGPARAMETERSFORSUCHDESIGNSANDAPPLICATIONSTOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
0RODUCTISINTENDEDFORUSEINGENERALELECTRONICSAPPLICATIONSEGCOMPUTERSPERSONALEQUIPMENTOFFICEEQUIPMENTMEASURINGEQUIPMENTINDUSTRIALROBOTSANDHOMEELECTRONICS
APPLIANCESORFORSPECIFICAPPLICATIONSASEXPRESSLYSTATEDINTHISDOCUMENT0RODUCTISNEITHERINTENDEDNORWARRANTEDFORUSEINEQUIPMENTORSYSTEMSTHATREQUIREEXTRAORDINARILY
HIGH LEVELS OF QUALITY ANDOR RELIABILITY ANDOR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE BODILY INJURY SERIOUS PROPERTY DAMAGE OR SERIOUS PUBLIC IMPACT
h5NINTENDED5SEv5NINTENDED5SE INCLUDES WITHOUTLIMITATIONEQUIPMENTUSEDINNUCLEAR FACILITIES EQUIPMENT USEDINTHEAEROSPACEINDUSTRYMEDICAL EQUIPMENT EQUIPMENT
USED FOR AUTOMOBILES TRAINS SHIPS AND OTHER TRANSPORTATION TRAFFIC SIGNALING EQUIPMENT EQUIPMENT USED TO CONTROL COMBUSTIONS OR EXPLOSIONS SAFETY DEVICES ELEVATORS AND
ESCALATORSDEVICESRELATEDTOELECTRICPOWERANDEQUIPMENTUSEDINFINANCERELATEDFIELDS$ONOTUSE0RODUCTFOR5NINTENDED5SEUNLESSSPECIFICALLYPERMITTEDINTHISDOCUMENT
$ONOTDISASSEMBLEANALYZEREVERSEENGINEERALTERMODIFYTRANSLATEORCOPY0RODUCTWHETHERINWHOLEORINPART
0RODUCTSHALLNOTBEUSEDFORORINCORPORATEDINTOANYPRODUCTSORSYSTEMSWHOSEMANUFACTUREUSEORSALEISPROHIBITEDUNDERANYAPPLICABLELAWSORREGULATIONS
4HEINFORMATIONCONTAINEDHEREINISPRESENTEDONLYASGUIDANCEFOR0RODUCTUSE.ORESPONSIBILITYISASSUMEDBY4/3()"!FORANYINFRINGEMENTOFPATENTSORANYOTHERINTELLECTUAL
PROPERTYRIGHTSOFTHIRDPARTIESTHAT MAYRESULTFROMTHE USEOF0RODUCT.O LICENSETOANYINTELLECTUALPROPERTYRIGHTIS GRANTEDBYTHISDOCUMENT WHETHEREXPRESSORIMPLIEDBY
ESTOPPELOROTHERWISE
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM
EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR
INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA,
AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING
WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
$O NOT USE OR OTHERWISE MAKE AVAILABLE 0RODUCT OR RELATED SOFTWARE OR TECHNOLOGY FOR ANY MILITARY PURPOSES INCLUDING WITHOUT LIMITATION FOR THE DESIGN DEVELOPMENT USE
STOCKPILINGORMANUFACTURINGOFNUCLEARCHEMICALORBIOLOGICALWEAPONSORMISSILETECHNOLOGYPRODUCTSMASSDESTRUCTIONWEAPONS0RODUCTANDRELATEDSOFTWAREANDTECHNOLOGY
MAY BE CONTROLLED UNDER THE *APANESE &OREIGN %XCHANGE AND &OREIGN 4RADE ,AW AND THE 53 %XPORT !DMINISTRATION 2EGULATIONS %XPORT AND REEXPORT OF 0RODUCT OR RELATED
SOFTWAREORTECHNOLOGYARESTRICTLYPROHIBITEDEXCEPTINCOMPLIANCEWITHALLAPPLICABLEEXPORTLAWSANDREGULATIONS
0RODUCTMAYINCLUDEPRODUCTSSUBJECTTOFOREIGNEXCHANGEANDFOREIGNTRADECONTROLLAWS
0LEASECONTACTYOUR4/3()"!SALESREPRESENTATIVEFORDETAILSASTOENVIRONMENTALMATTERSSUCHASTHE2O(3COMPATIBILITYOF0RODUCT0LEASEUSE0RODUCTINCOMPLIANCEWITHALL
APPLICABLELAWSANDREGULATIONSTHATREGULATETHEINCLUSIONORUSEOFCONTROLLEDSUBSTANCESINCLUDINGWITHOUTLIMITATIONTHE%52O(3$IRECTIVE4/3()"!ASSUMESNOLIABILITYFOR
DAMAGESORLOSSESOCCURRINGASARESULTOFNONCOMPLIANCEWITHAPPLICABLELAWSANDREGULATIONS