©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSP42/43
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
* Pulse T est: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO
Collector Base Voltage : KSP42
: KSP43 300
200 V
V
VCEO Collector-Emitter Voltage : KSP42
: KSP43 300
200 V
V
VEBO Emitter-Base Voltage 6 V
ICCollector Current 500 mA
PCCollector Power Dissipation 625 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
BVCBO Collector-Base Breakdown Voltage
: KSP42
: KSP43
IC=100µA, IE=0 300
200 V
V
BVCEO * Collector -Emitter Breakdown Voltage
: KSP42
: KSP43
IC=1mA, IB=0 300
200 V
V
BVEBO Emitter-Base Breakdown Voltage IE=100µA, IC=0 6 V
ICBO Collector Cut-off Current : KSP42
: KSP43 VCB=200V, IE=0
VCB=160V, IE=0
100
100 nA
nA
IEBO Emitter Cut-off Current : KSP42
: KSP43 VBE=6V, IC=0
VBE=4V, IC=0 100
100 nA
nA
hFE * DC Current Gain VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
25
40
40
VCE (sat) * Collector-Emitter Saturation Voltage IC=20mA, IB=2mA 0.5 V
VBE (sat) * Base-Emitter Saturat ion Voltage IC=20mA, IB=2mA 0.9 V
Cob Output Capa cita nce : KSP42
: KSP43
VCB=20V, IE=0
f=1MHz 3
4pF
pF
fTCurrent Gain Bandwidth Product VCE=20V, IC=10mA
f=100MHz 50 MHz
KSP42/43
High Voltage Transistor
• Collector-Emitter Voltage: VCEO=KSP 42: 300V
KSP43: 200V
• Collector Power Dissipation: PC(max)=625mW
1. Emitter 2. Base 3. Collector
TO-92
1
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSP42/43
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 3. Collector-Base Capacitance Figure 4. Current Gain Bandwidth Product
110100
10
100
1000
VCE = 10V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100
0.01
0.1
1
10
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sa t)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
IE = 0
f = 1MHz
Ccb [pF], CAPACI TANCE
VCB [V], COLLECTOR-BASE VOLTAGE
1 10 100
0
20
40
60
80
100
120
VCE = 20V
fT[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Dimensions
KSP42/43
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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