FNA22512A - ON SEMICONDUCTOR

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FNA22512A Rev. C0

FNA22512A 1200 V Motion SPM® 2 Series

October 2014

FNA22512A

1200 V Motion SPM® 2 Series

Features

• UL Certified No. E209204 (UL1557)

• 1200 V - 25 A 3-Phase IGBT Inverter, Including

Control ICs for Gate Drive and Protections

• Low-Loss, Short-Circuit-Rated IGBTs

• Very Low Thermal Resistance Using Al2O3 DBC

Substrate

• Built-In Bootstrap Diodes and Dedicated Vs Pins

Simplify PCB Layout

• Separate Open-Emitter Pins from Low-Side IGBTs for

Three-Phase Current Sensing

• Single-Grounded Power Supply Supported

• Built-In NTC Thermistor for Temperature Monitoring

and Management

• Adjustable Over-Current Protection via Integrated

Sense-IGBTs

• Isolation Rating of 2500 Vrms / 1 min.

Applications

• Motion Control - Industrial Motor (AC 400 V Class)

Related Resources

• AN-9075 - Users Guide for 1200V SPM® 2 Series

• AN-9076 - Mounting Guide for New SPM® 2 Package

• AN-9079 - Thermal Performance of 1200V Motion

SPM® 2 Series by Mounting Torque

General Description

The FNA22512A is a Motion SPM® 2 module providing a

fully-featured, high-performance inverter output stage for

AC induction, BLDC, and PMSM motors. These modules

integrate optimized gate drive of the built-in IGBTs to

minimize EMI and losses, while also providing multiple

on-module protection features: under-voltage lockouts,

over-current shutdown, temperature sensing, and fault

reporting. The built-in, high-speed HVIC requires only a

single supply voltage and translates the incoming logic-

level gate inputs to high-voltage, high-current drive

signals to properly drive the module's internal IGBTs.

Separate negative IGBT terminals are available for each

phase to support the widest variety of control algorithms.

Package Marking and Ordering Information

Figure 1. Package Overview

Device Device Marking Package Packing Type Quantity

FNA22512A FNA22512A SPMCA-A34 Rail 6

FNA22512A Rev. C0

FNA22512A 1200 V Motion SPM® 2 Series

Intergrated Power Functions

• 1200 V - 25 A IGBT inverter for three-phase DC / AC power conversion (refer to Figure 3)

Intergrated Drive, Protection, and System Control Functions

• For inverter high-side IGBTs: gate-drive circuit, high-voltage isolated high-speed level-shifting control circuit,

Under-Voltage Lock-Out Protection (UVLO),

Available bootstrap circuit example is given in Figures 5 and 15.

• For inverter low-side IGBTs: gate-drive circuit, Short-Circuit Protection (SCP) control circuit,

Under-Voltage Lock-Out Protection (UVLO)

• Fault signaling: corresponding to UV (low-side supply) and SC faults

• Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input

Pin Configuration

Figure 2. Top View

(34) VS(W)

(33) VB(W)

(31) VCC(WH)

(30) IN(WH)

(29) VS(V)

(28) VB(V)

(26) VCC(VH)

(25) IN(VH)

(24) VS(U)

(23) VB(U)

(21) VCC(UH)

(20) COM(H)

(19) IN(UH)

(18) RSC

(17) CSC

(16) CFOD

(15) VFO

(12) IN(UL)

(13) IN(VL)

(14) IN(WL)

(10) VCC(L)

(11) COM(L)

(22) VBD(U)

(27) VBD(V)

(32) VBD(W)

(1) P

(2) W

(3) V

(4) U

(5) NW

(6) NV

(7) NU

(8) RTH

(9) VTH

Case Temperature (TC)

Detecting Point

FNA22512A Rev. C0

FNA22512A 1200 V Motion SPM® 2 Series

Pin Descriptions

Pin Number Pin Name Pin Description

1 P Positive DC-Link Input

2 W Output for W Phase

3 V Output for V Phase

4 U Output for U Phase

5 NWNegative DC-Link Input for W Phase

6 NVNegative DC-Link Input for V Phase

7 NUNegative DC-Link Input for U Phase

8 RTH Series Resistor for Thermistor (Temperature Detection)

9 VTH Thermistor Bias Voltage

10 VCC(L) Low-Side Bias Voltage for IC and IGBTs Driving

11 COM(L) Low-Side Common Supply Ground

12 IN(UL) Signal Input for Low-Side U Phase

13 IN(VL) Signal Input for Low-Side V Phase

14 IN(WL) Signal Input for Low-Side W Phase

15 VFO Fault Output

16 CFOD Capacitor for Fault Output Duration Selection

17 CSC Capacitor (Low-Pass Filter) for Short-Circuit Current Detection Input

18 RSC Resistor for Short-Circuit Current Detection

19 IN(UH) Signal Input for High-Side U Phase

20 COM(H) High-Side Common Supply Ground

21 VCC(UH) High-Side Bias Voltage for U Phase IC

22 VBD(U) Anode of Bootstrap Diode for U Phase High-Side Bootstrap Circuit

23 VB(U) High-Side Bias Voltage for U Phase IGBT Driving

24 VS(U) High-Side Bias Voltage Ground for U Phase IGBT Driving

25 IN(VH) Signal Input for High-Side V Phase

26 VCC(VH) High-Side Bias Voltage for V Phase IC

27 VBD(V) Anode of Bootstrap Diode for V Phase High-Side Bootstrap Circuit

28 VB(V) High-Side Bias Voltage for V Phase IGBT Driving

29 VS(V) High-Side Bias Voltage Ground for V Phase IGBT Driving

30 IN(WH) Signal Input for High-Side W Phase

31 VCC(WH) High-Side Bias Voltage for W Phase IC

32 VBD(W) Anode of Bootstrap Diode for W Phase High-Side Bootstrap Circuit

33 VB(W) High-Side Bias Voltage for W Phase IGBT Driving

34 VS(W) High-Side Bias Voltage Ground for W Phase IGBT Driving

FNA22512A Rev. C0

FNA22512A 1200 V Motion SPM® 2 Series

Internal Equivalent Circuit and Input/Output Pins

Figure 3. Internal Block Diagram

Notes:

1. Inverter high-side is composed of three normal-IGBTs, freewheeling diodes, and one control IC for each IGBT.

2. Inverter low-side is composed of three sense-IGBTs, freewheeling diodes, and one control IC for each IGBT. It has gate drive and protection functions.

3. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals.

FNA22512A Rev. C0

FNA22512A 1200 V Motion SPM® 2 Series

Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)

Inverter Part

Control Part

Bootstrap Diode Part

Total System

Thermal Resistance

Notes:

4. These values had been made an acquisition by the calculation considered to design factor.

5. For the measurement point of case temperature (TC), please refer to Figure 2.

Symbol Parameter Conditions Rating Unit

VPN Supply Voltage Applied between P - NU, NV, NW900 V

VPN(Surge) Supply Voltage (Surge) Applied between P - NU, NV, NW1000 V

VCES Collector - Emitter Voltage 1200 V

± ICEach IGBT Collector Current TC = 25°C, TJ £ 150°C (Note 4) 25 A

± ICP Each IGBT Collector Current (Peak) TC = 25°C, TJ £ 150°C, Under 1 ms Pulse

Width (Note 4)

50 A

PCCollector Dissipation TC = 25°C per One Chip (Note 4) 154 W

TJOperating Junction Temperature -40 ~ 150 °C

Symbol Parameter Conditions Rating Unit

VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 20 V

VBS High-Side Control Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V),

VB(W) - VS(W)

20 V

VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH),

IN(UL), IN(VL), IN(WL) - COM

-0.3 ~ VCC+0.3 V

VFO Fault Output Supply Voltage Applied between VFO - COM -0.3 ~ VCC+0.3 V

IFO Fault Output Current Sink Current at VFO pin 2 mA

VSC Current Sensing Input Voltage Applied between CSC - COM -0.3 ~ VCC+0.3 V

Symbol Parameter Conditions Rating Unit

VRRM Maximum Repetitive Reverse Voltage 1200 V

IFForward Current TC = 25°C, TJ £ 150°C (Note 4) 1.0 A

IFP Forward Current (Peak) TC = 25°C, TJ £ 150°C, Under 1 ms Pulse

Width (Note 4)

2.0 A

TJOperating Junction Temperature -40 ~ 150 °C

Symbol Parameter Conditions Rating Unit

VPN(PROT) Self-Protection Supply Voltage Limit

(Short-Circuit Protection Capability)

VCC = VBS = 13.5 ~ 16.5 V, TJ = 150°C,

VCES < 1200 V, Non-Repetitive, < 2 ms

800 V

TCModule Case Operation Temperature See Figure 2 -40 ~ 125 °C

TSTG Storage Temperature -40 ~ 125 °C

VISO Isolation Voltage 60 Hz, Sinusoidal, AC 1 Minute, Connection

Pins to Heat Sink Plate

2500 Vrms

Symbol Parameter Conditions Min. Typ. Max. Unit

Rth(j-c)Q Junction-to-Case Thermal Resistance

(Note 5)

Inverter IGBT Part (per 1 / 6 Module) - - 0.81 °C / W

Rth(j-c)F Inverter FWD Part (per 1 / 6 Module) - - 1.58 °C / W

FNA22512A Rev. C0

FNA22512A 1200 V Motion SPM® 2 Series

Electrical Characteristics (TJ = 25°C, unless otherwise specified.)

Inverter Part

Note:

6. tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switching times of IGBT under the given gate-driving condition internally. For the

detailed information, please see Figure 4.

Figure 4. Switching Time Definition

Symbol Parameter Conditions Min. Typ. Max. Unit

VCE(SAT) Collector - Emitter Saturation

Voltage

VCC = VBS = 15 V

VIN = 5 V

IC = 25 A, TJ = 25°C - 1.90 2.50 V

VFFWDi Forward Voltage VIN = 0 V IF = 25 A, TJ = 25°C - 2.00 2.60 V

HS tON Switching Times VPN = 600 V, VCC = 15 V, IC = 25 A

TJ = 25°C

VIN = 0 V « 5 V, Inductive Load

See Figure 5

(Note 6)

0.60 1.10 1.70 ms

tC(ON) - 0.25 0.65 ms

tOFF - 1.15 1.75 ms

tC(OFF) - 0.15 0.55 ms

trr - 0.20 - ms

LS tON VPN = 600 V, VCC = 15 V, IC = 25 A

TJ = 25°C

VIN = 0 V « 5 V, Inductive Load

See Figure 5

(Note 6)

0.40 0.90 1.50 ms

tC(ON) - 0.25 0.65 ms

tOFF - 1.10 1.70 ms

tC(OFF) - 0.15 0.55 ms

trr - 0.25 - ms

ICES Collector - Emitter Leakage

Current

VCE = VCES - - 5 mA

VCE IC

VIN

tON

tC(O N)

VIN(ON )

10% IC

10% VCE

90% IC

100% IC

trr

100% IC

VCE

VIN

tOFF

tC(OFF)

VIN (OF F) 10% VC E 10% IC

(a) turn-on (b) turn-off

FNA22512A Rev. C0

FNA22512A 1200 V Motion SPM® 2 Series

Figure 5. Example Circuit for Switching Test

Figure 6. Switching Loss Characteristics (Typical)

Figure 7. R-T Curve of Built-in Thermistor

One-Leg Diagram of SPM 2

NU,V,W

VC C

COM

OUT

VC C

COM

OUT

F OD

VF O

RSC

VPN

U,V,W

Inductor

HS Switching

LS Switching

600V

RBS

15 V

5 V

4.7 kΩ

CBS

HS Switching

LS Switching

VIN

0 V

5 V VCC

-20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120

100

150

200

250

300

350

400

450

500

550

600 R-T Curve

Resistance[kW]

Temperature TTH[ ]℃

50 60 70 80 90 100 110 120

Resistance[kW]

Temperature [ ]℃

R-T Curve in 50 ~ 125℃ ℃

FNA22512A Rev. C0

FNA22512A 1200 V Motion SPM® 2 Series

Bootstrap Diode Part

Control Part

Notes:

7. Short-circuit current protection functions only at the low-sides because the sense current is divided from main current at low-side IGBTs. Inserting the shunt resistor for

monitoring the phase current at NU, NV, NW terminal, the trip level of the short-circuit current is changed.

8. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : tFOD = 0.8 x 106 x CFOD [s].

9. TTH is the temperature of thermistor itself. To know case temperature (TC), conduct experiments considering the application.

Symbol Parameter Conditions Min. Typ. Max. Unit

VFForward Voltage IF = 1.0 A, TJ = 25°C - 2.2 - V

trr Reverse-Recovery Time IF = 1.0 A, dIF / dt = 50 A / ms, TJ = 25°C - 80 - ns

Symbol Parameter Conditions Min. Typ. Max. Unit

IQCCH

Quiescent VCC Supply

Current

VCC(UH,VH,WH) = 15 V,

IN(UH,VH,WH) = 0 V

VCC(UH) - COM(H),

VCC(VH) - COM(H),

VCC(WH) - COM(H)

- - 0.15 mA

IQCCL VCC(L) = 15 V, IN(UL,VL, WL) = 0 V VCC(L) - COM(L) - - 5.00 mA

IPCCH

Operating VCC Supply

Current

VCC(UH,VH,WH) = 15 V, fPWM = 20

kHz, Duty = 50%, Applied to one

PWM Signal Input for High-Side

VCC(UH) - COM(H),

VCC(VH) - COM(H),

VCC(WH) - COM(H)

- - 0.30 mA

IPCCL VCC(L) = 15V, fPWM = 20 kHz, Duty =

50%, Applied to one PWM Signal

Input for Low-Side

VCC(L) - COM(L) - - 13.0 mA

IQBS Quiescent VBS Supply

Current

VBS = 15 V, IN(UH, VH, WH) = 0 V VB(U) - VS(U),

VB(V) - VS(V),

VB(W) - VS(W)

- - 0.30 mA

IPBS Operating VBS Supply

Current

VCC = VBS = 15 V, fPWM = 20 kHz,

Duty = 50%, Applied to one PWM

Signal Input for High-Side

VB(U) - VS(U),

VB(V) - VS(V),

VB(W) - VS(W)

- - 9.0 mA

VFOH Fault Output Voltage VCC = 15 V, VSC = 0 V, VFO Circuit: 4.7 kW to 5 V Pull-up 4.5 - - V

VFOL VCC = 15 V, VSC = 1 V, VFO Circuit: 4.7 kW to 5 V Pull-up - - 0.5 V

ISEN Sensing Current of

Each Sense IGBT

VCC = 15 V, VIN = 5 V, RSC = 0 W, No

Connection of Shunt Resistor at

NU,V,W Terminal

IC = 25 A - 23 - mA

VSC(ref) Short Circuit Trip Level VCC = 15 V (Note 7) CSC - COM(L) 0.43 0.50 0.57 V

ISC Short Circuit Current

Level for Trip

RSC = 27 W (± 1%), No Connection of Shunt Resistor at

NU,V,W Terminal (Note 7)

- 50 - A

UVCCD Supply Circuit Under-

Voltage Protection

Detection Level 10.3 - 12.8 V

UVCCR Reset Level 10.8 - 13.3 V

UVBSD Detection Level 9.5 - 12.0 V

UVBSR Reset Level 10.0 - 12.5 V

tFOD Fault-Out Pulse Width CFOD = Open (Note 8) 50 - - ms

CFOD = 2.2 nF 1.7 - - ms

VIN(ON) ON Threshold Voltage Applied between IN(UH, VH, WH) - COM(H), IN(UL, VL, WL) -

COM(L)

- - 2.6 V

VIN(OFF) OFF Threshold Voltage 0.8 - - V

RTH Resistance of

Thermistor

at TTH = 25°C See Figure 7

(Note 9)

- 47 - kW

at TTH = 100°C - 2.9 - kW

FNA22512A Rev. C0

FNA22512A 1200 V Motion SPM® 2 Series

Recommended Operating Conditions

Note:

10. This product might not make output response if input pulse width is less than the recommanded value.

Figure 8. Allowable Maximum Output Current

Note:

11. This allowable output current value is the reference data for the safe operation of this product. This may be different from the actual application and operating condition.

Symbol Parameter Conditions Value Unit

Min. Typ. Max.

VPN Supply Voltage Applied between P - NU, NV, NW300 600 800 V

VCC Control Supply Voltage Applied between VCC(UH, VH, WH) - COM(H), VCC(L) -

COM(L)

14.0 15.0 16.5 V

VBS High-Side Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) -

VS(W)

13.0 15.0 18.5 V

dVCC / dt,

dVBS / dt

Control Supply Variation -1 - 1 V / ms

tdead Blanking Time for

Preventing Arm - Short

For Each Input Signal 2.0 - - ms

fPWM PWM Input Signal -40°C £ TC £ 125°C, -40°C £ TJ £ 150°C - - 20 kHz

VSEN Voltage for Current

Sensing

Applied between NU, NV, NW - COM(H, L)

(Including Surge Voltage)

-5 5 V

PWIN(ON) Minimun Input Pulse

Width

VCC = VBS = 15 V, IC £ 50 A, Wiring Inductance

between NU, V, W and DC Link N < 10nH (Note 10)

2.0 - - ms

PWIN(OFF) 2.0 - -

TJJunction Temperature -40 - 150 °C

FNA22512A Rev. C0

FNA22512A 1200 V Motion SPM® 2 Series

Mechanical Characteristics and Ratings

Figure 9. Flatness Measurement Position

Figure 10. Mounting Screws Torque Order

Notes:

12. Do not over torque when mounting screws. Too much mounting torque may cause DBC cracks, as well as bolts and Al heat-sink destruction.

13. Avoid one-sided tightening stress. Figure 10 shows the recommended torque order for the mounting screws. Uneven mounting can cause the DBC substrate of package to be

damaged. The pre-screwing torque is set to 20 ~ 30% of maximum torque rating.

Parameter Conditions Min. Typ. Max. Unit

Device Flatness See Figure 9 0 - +200 mm

Mounting Torque Mounting Screw: M4

See Figure 10

Recommended 1.0 N • m 0.9 1.0 1.5 N • m

Recommended 10.1 kg • cm 9.1 10.1 15.1 kg • cm

Terminal Pulling Strength Load 19.6 N 10 - - s

Terminal Bending Strength Load 9.8 N, 90 degrees Bend 2 - - times

Weight - 50 - g

(＋)

Pre - Screwing : 1 2

Final Screwing : 2 1

FNA22512A Rev. C0

FNA22512A 1200 V Motion SPM® 2 Series

Time Charts of SPMs Protective Function

Figure 11. Under-Voltage Protection (Low-Side)

a1 : Control supply voltage rises: after the voltage rises UVCCR, the circuits start to operate when the next input is applied.

a2 : Normal operation: IGBT ON and carrying current.

a3 : Under-voltage detection (UVCCD).

a4 : IGBT OFF in spite of control input condition.

a5 : Fault output operation starts with a fixed pulse width according to the condition of the external capacitor CFOD.

a6 : Under-voltage reset (UVCCR).

a7 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.

Figure 12. Under-Voltage Protection (High-Side)

b1 : Control supply voltage rises: after the voltage reaches UVBSR, the circuits start to operate when the next input is applied.

b2 : Normal operation: IGBT ON and carrying current.

b3 : Under-voltage detection (UVBSD).

b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.

b5 : Under-voltage reset (UVBSR).

b6 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.

Input Signal

Output Current

Fault Output Signal

Control

Supply Voltage

RESET

UVCCR

Protection

Circuit State SET RESET

UVCCD

Input Signal

Output Current

Fault Output Signal

Control

Supply Voltage

RESET

UVBSR

Protection

Circuit State SET RESET

UVBSD

b2 b4

High-level (no fault output)

FNA22512A Rev. C0

FNA22512A 1200 V Motion SPM® 2 Series

Figure 13. Short-Circuit Current Protection (Low-Side Operation only)

(with the external sense resistance and RC filter connection)

c1 : Normal operation: IGBT ON and carrying current.

c2 : Short-circuit current detection (SC trigger).

c3 : All low-side IGBTs gate are hard interrupted.

c4 : All low-side IGBTs turn OFF.

c5 : Fault output operation starts with a fixed pulse width according to the condition of the external capacitor CFOD.

c6 : Input HIGH: IGBT ON state, but during the active period of fault output, the IGBT doesn’t turn ON.

c7 : Fault output operation finishes, but IGBT doesn’t turn on until triggering the next signal from LOW to HIGH.

c8 : Normal operation: IGBT ON and carrying current.

Input/Output Interface Circuit

Figure 14. Recommended MCU I/O Interface Circuit

Note:

14. RC coupling at each input might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board.

The input signal section of the Motion SPM 2 product integrates 5 kW (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the

signal voltage drop at input terminal.

Lower Arms

Control Input

Output Current

Sensing Voltage

of Sense Resistor

Fault Output Signal

SC referenc e voltage

RC filter circuit

time constant

delay

SC current trip level

Protection

Circuit state SET RESET

c6 c7

Internal IGBT

Gate-Emitter Voltage

Internal delay

at protection circuit

MCU

COM

+5V (MCU or control power)

, ,

IN(UL) IN(VL) IN(WL)

, ,

IN( UH) IN(VH) IN(WH)

VFO

4.7 kΩSPM

FNA22512A Rev. C0

FNA22512A 1200 V Motion SPM® 2 Series

Figure 15. Typical Application Circuit

Notes:

15. To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3 cm).

16. VFO output is an open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 2 mA. Please

refer to Figure 14.

17. Fault out pulse width can be adjust by capacitor C5 connected to the CFOD terminal.

18. Input signal is active-HIGH type. There is a 5 kW resistor inside the IC to pull-down each input signal line to GND. RC coupling circuits should be adopted for the prevention

of input signal oscillation. R1C1 time constant should be selected in the range 50 ~ 150 ns (recommended R1 = 100 Ω, C1 = 1 nF).

19. Each wiring pattern inductance of point A should be minimized (recommend less than 10 nH). Use the shunt resistor R4 of surface mounted (SMD) type to reduce wiring

inductance. To prevent malfunction, wiring of point E should be connected to the terminal of the shunt resistor R4 as close as possible.

20. To insert the shunt resistor to measure each phase current at NU, NV, NW terminal, it makes to change the trip level ISC about the short-ciruit current.

21. To prevent errors of the protection function, the wiring of points B, C, and D should be as short as possible. The wiring of B between CSC filter and RSC terminal should be

divided at the point that is close to the terminal of sense resistor R5.

22. For stable protection function, use the sense resistor R5 with resistance variation within 1% and low inductance value.

23. In the short-circuit protection circuit, select the R6C6 time constant in the range 1.0 ~ 1.5 ms. R6 should be selected with a minimum of 10 times larger resistance than sense

resistor R5. Do enough evaluaiton on the real system because short-circuit protection time may vary wiring pattern layout and value of the R6C6 time constant.

24. Each capacitor should be mounted as close to the pins of the Motion SPM® 2 product as possible.

25. To prevent surge destruction, the wiring between the smoothing capacitor C7 and the P & GND pins should be as short as possible. The use of a high-frequency non-

inductive capacitor of around 0.1 ~ 0.22 mF between the P & GND pins is recommended.

26. Relays are used in most systems of electrical equipments in industrial application. In these cases, there should be sufficient distance between the MCU and the relays.

27. The Zener diode or transient voltage suppressor should be adapted for the protection of ICs from the surge destruction between each pair of control supply terminals

(recommanded Zener diode is 22 V / 1 W, which has the lower Zener impedance characteristic than about 15 Ω).

28. C2 of around seven times larger than bootstrap capacitor C3 is recommended.

29. Please choose the electrolytic capacitor with good temperature characteristic in C3. Choose 0.1 ~ 0.2 mF R-category ceramic capacitors with good temperature and frequency

characteristics in C4.

Fault

C3C4

C2C4

VDCC7

Gating UH

Gating VH

Gating WH

Gating WL

Gating VL

Gating UL

W-Phase Current

V-Phase Current

U-Phase Current

C1C1C1

5V l ine

LVIC

COM

VC C

VF O

CSC

OUT

W (2)

P (1)

(24) VS( U)

(23) VB (U )

(29) VS(V)

(28) VB(V)

(17) C

(15) V FO

(14) IN(WL)

(13) IN(VL)

(12) IN(UL)

HVIC

OUT

(25) IN(VH )

(10) VCC(L)

(19) IN(UH)

(34) VS( W)

(33) VB( W)

(21) VCC(U H)

(30) IN(WH)

Ther mistor

(11) COM(L)

VC C

COM

FOD

NU(7)

NV(6)

W(5)

U (4)

V (3)

(8) RTH

(9) VTH

(16) CFOD

RSC (18)

(20) COM(H)

(22) VBD(U )

(26) VCC (V H )

(27) V BD(V )

(31) VCC(WH)

(32) V BD(W )

HVIC

OUT

VC C

COM

HVIC

OUT

VC C

COM

15V li ne

5V l ine

Temp.

Monitoring R5

Sense

Resistor

Shunt

Resistor

Control

GND Line

Power

GND Line

FNA22512A Rev. C0

FNA22512A 1200 V Motion SPM® 2 Series

Detailed Package Outline Drawings (FNA22512A)

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FNA22512A Rev. C0

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