MB88151APNF-G-401-JNERE1 - Fujitsu Semiconductor

FUJITSU MICROELECTRONICS

DATA SHEET

2008.10

ASSP

Spread Spectrum Clock Generator

MB88151A

■DESCRIPTION

MB88151A is a clock generator for EMI (Electro Magnetic Interference) reduction. The peak of unnecessary

radiation noise (EMI) can be attenuated by making the oscillation frequency slightly modulate periodically with

the internal modulator. It corresponds to both of the center spread which modulates frequency in modulation off

as Middle Centered and down spread which modulates so as not to exceed frequency in modulation off.

■FEATURES

• Modulation rate : ± 0.5%, ± 1.5% (Center spread), − 1.0%, − 3.0% (Down spread)

• Equipped with oscillation circuit : Range of oscillation 8.3 MHz to 33.4 MHz

• Modulation clock output Duty : 40% to 60%

• Low current consumption by CMOS process : 5 mA (24 MHz : Typ-sample, no load)

• Power supply voltage : 3.3 V ± 0.3 V

• Operating temperature : − 40 °C to + 85 °C

• Package : SOP 8-pin

MB88151A-

100/101

(multiply-by-1)

MB88151A-

200/201

(multiply-by-2)

MB88151A-

400/401

(multiply-by-4)

MB88151A-

500/501

(multiply-by-1/2)

MB88151A-

800/801

(multiply-by-8)

Input

frequency/

Output

frequency

16.6 MHz to 33.4 MHz/

16.6 MHz to 33.4 MHz

16.6 MHz to 33.4 MHz/

33.2 MHz to 66.8 MHz

16.6 MHz to 33.4 MHz/

66.4 MHz to 133.6 MHz

16.6 MHz to 33.4 MHz/

8.3 MHz to 16.7 MHz

66.4 MHz to 133.6 MHz

Modulation

clock

cycle-cycle

jitter

Less than100 ps Less than 100 ps Less than 150 ps Less than 200 ps Less than 150 ps

DS04-29127-2E

MB88151A

2DS04-29127-2E

■PRODUCT LINEUP

MB88151A has five kinds of multiplication type.

■PIN ASSIGNMENT

■PIN DESCRIPTION

* : XPD = 800 kΩ pull-up resistor at “L”

Product Input frequency range Multiplier ratio Output frequency range

MB88151A-100/101

16.6 MHz to 33.4 MHz

Multiply-by-1 16.6 MHz to 33.4 MHz

MB88151A-200/201 Multiply-by-2 33.2 MHz to 66.8 MHz

MB88151A-400/401 Multiply-by-4 66.4 MHz to 133.6 MHz

MB88151A-500/501 Multiply-by-1/2 8.3 MHz to 16.7 MHz

MB88151A-800/801 8.3 MHz to 16.7 MHz Multiply-by-8 66.4 MHz to 133.6 MHz

Pin name I/O Pin no. Description

XIN I 1 Resonator connection pin/clock input pin

VSS ⎯2 GND pin

SEL0 I 3 Modulation rate setting pin

SEL1 I 4 Modulation rate setting pin

CKOUT O 5 Modulated clock output pin

ENS/XPD I 6 Modulation enable setting pin (with pull-up resistance)/

Power down pin (with pull-up resistor)*

VDD ⎯7 Power supply voltage pin

XOUT O 8 Resonator connection pin

XIN

SEL0

SEL1

XOUT

ENS/XPD

CKOUT

MB88151A

TOP VIEW

FPT-8P-M02

MB88151A

DS04-29127-2E 3

■I/O CIRCUIT TYPE

Note : For XIN and XOUT pins, refer to “■OSCILLATION CIRCUIT”.

Pin Circuit type Remarks

SEL0,

SEL1

CMOS hysteresis input

ENS CMOS hysteresis input with 50 kΩ +

800 kΩ (Typ) pull-up resistors

Note : If “L” is input to XPD when the

XPD function is selected, 50 kΩ

pull-up resistor is disconnected.

CKOUT • CMOS output

•I

OL = 4 mA

800 kΩ

50 kΩ

MB88151A

4DS04-29127-2E

■HANDLING DEVICES

Preventing Latch-up

A latch-up can occur if, on this device, (a) a voltage higher than VDD or a voltage lower than VSS is applied to an

input or output pin or (b) a voltage higher than the rating is applied between VDD pin and VSS pin. The latch-up,

if it occurs, significantly increases the power supply current and may cause thermal destruction of an element.

When you use this device, be very careful not to exceed the maximum rating.

Handling unused pins

Do not leave an unused input pin open, since it may cause a malfunction. Handle by, using a pull-up or

pull-down resistor.

Unused output pin should be opened.

The attention when the external clock is used

Input the clock to XIN pin, and XOUT pin should be opened when you use the external clock.

Please pay attention so that an overshoot and an undershoot do not occur to an input clock of XIN pin.

Power supply pins

Please design connecting the power supply pin of this device by as low impedance as possible from the current

supply source.

We recommend connecting electrolytic capacitor (about 10 µF) and the ceramic capacitor (about 0.01 µF) in

parallel between VSS pin and VDD pin near the device, as a bypass capacitor.

Oscillation circuit

Noise near the XIN and XOUT pins may cause the device to malfunction. Design printed circuit boards so that

electric wiring of XIN or XOUT pin and the resonator do not intersect other wiring.

Design the printed circuit board that surrounds the XIN and XOUT pins with ground.

MB88151A

DS04-29127-2E 5

■BLOCK DIAGRAM

−

IDAC ICO

VDD

CKOUT

VSS

Rf = 1 MΩ

SEL1

XOUT

XIN

SEL0

ENS/XPD

Modulation

clock output

Modulation rate

setting

Modulation rate

setting

Modulation enable setting/

Power down setting

Reference clock

PLL block

Reference clock

Phase

compare V/I

conversion

Modulation logic Modulation

rate setting/

Modulation

enable setting

Loop filter

Modulation clock

output

MB88151A PLL block

Charge

pump

A glitchless IDAC (current output D/A converter) provides precise modulation,

thereby dramatically reducing EMI.

MB88151A

6DS04-29127-2E

■PIN SETTING

When changing the pin setting, the stabilization wait time for the modulation clock is required. The stabilization

wait time for the modulation clock take the maximum value of “■ ELECTRICAL CHARACTERISTICS • AC

Characteristics Lock-up time”.

ENS modulation enable setting (MB88151A-100/200/400/500/800)

Note : Spectrum does not spread when “L” is set to ENS. The clock with low jitter can be obtained. Because of ENS

has Pull-up resistance, spectrum spread when “H” is set to it or open the terminal.

XPD Power down setting (MB88151A-101/201/401/501/801)

Note : CKOUT of output pins are fixed to “L” output during power down.

SEL0, SEL1 Modulation rate setting

Note : The modulation rate can be changed at the level of the terminal.

ENS Modulation

L No modulation

H Modulation

XPD Status

L Power down Status

H Operating status

SEL1 SEL0 Modulation rate Modulation type

LL ± 1.5%Center spread

LH ± 0.5%Center spread

HL − 1.0%Down spread

HH − 3.0%Down spread

MB88151A

DS04-29127-2E 7

• Center spread

Spectrum is spread (modulated) by centering on the frequency in modulation off.

• Down spread

Spectrum is spread (modulated) below the frequency in modulation off.

−1.5% +1.5%

Radiation level

Frequency

Frequency in modulation off

Center spread example of ± 1.5% modulation rate

Modulation width 3.0%

−3.0%

Frequency in modulation off

Frequency

Radiation level

Down spread example of − 3.0% modulation rate

Modulation width 3.0%

MB88151A

8DS04-29127-2E

■ABSOLUTE MAXIMUM RATINGS

* : The parameter is based on VSS = 0.0 V.

WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,

temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

Parameter Symbol Rating Unit

Min Max

Power supply voltage* VDD − 0.5 + 4.0 V

Input voltage* VIVSS − 0.5 VDD + 0.5 V

Output voltage* VOVSS − 0.5 VDD + 0.5 V

Storage temperature TST − 55 + 125 °C

Operation junction temperature TJ − 40 + 125 °C

Output current IO − 14 + 14 mA

Overshoot VIOVER ⎯VDD + 1.0 (tOVER ≤ 50 ns) V

Undershoot VIUNDER VSS−1.0 (tUNDER ≤ 50 ns) ⎯V

VDD

VSS

Input pin

Overshoot/Undershoot

tUNDER ≤ 50 ns

tOVER ≤ 50 ns

VIOVER ≤ VDD + 1.0 V

VIUNDER ≤ VSS − 1.0 V

MB88151A

DS04-29127-2E 9

■RECOMMENDED OPERATING CONDITIONS

(VSS = 0.0 V)

WARNING: The recommended operating conditions are required in order to ensure the normal operation of

the semiconductor device. All of the device's electrical characteristics are warranted when the

device is operated within these ranges.

Always use semiconductor devices within their recommended operating condition ranges.

Operation outside these ranges may adversely affect reliability and could result in device failure.

No warranty is made with respect to uses, operating conditions, or combinations not represented

on the data sheet. Users considering application outside the listed conditions are advised to contact

their representatives beforehand.

Parameter Symbol Pin Conditions Value Unit

Min Typ Max

Power supply voltage VDD VDD ⎯3.0 3.3 3.6 V

“H” level input voltage VIH XIN,

SEL0,

SEL1,

ENS

⎯VDD × 0.8 ⎯VDD + 0.3 V

“L” level input voltage VIL ⎯VSS ⎯VDD × 0.2 V

Input clock

duty cycle tDCI XIN 8.3 MHz to

33.4 MHz 40 50 60 %

Operating temperature Ta ⎯⎯ − 40 ⎯ + 85 °C

XIN

1.5 V

Input clock duty cycle (tDCI = tb/ta)

MB88151A

10 DS04-29127-2E

■ELECTRICAL CHARACTERISTICS

• DC Characteristics

(Ta = − 40 °C to + 85 °C, VDD = 3.3 V ± 0.3 V, VSS = 0.0 V)

Parameter Symbol Pin Conditions Value Unit

Min Typ Max

Power supply current ICC VDD

No load capacitance at

output 24 MHz

MB88151A-100

⎯5.0 7.0 mA

At power down

MB88151A-101 ⎯10 ⎯µA

Output voltage

VOH

CKOUT

“H” level output,

IOH = − 4 mA VDD − 0.5 ⎯VDD V

VOL “L” level output,

IOL = 4 mA VSS ⎯0.4 V

Output impedance ZOCKOUT 8.3 MHz to 133.6 MHz ⎯45 ⎯Ω

Input capacitance CIN

XIN,

SEL0,

SEL1,

ENS

Ta = + 25 °C,

VDD = VI = 0.0 V,

f = 1 MHz

⎯⎯16 pF

Load capacitance CLCKOUT

8.3 MHz to 66.8 MHz ⎯⎯15

pF66.8 MHz to 100 MHz ⎯⎯10

100 MHz to 133.6 MHz ⎯⎯ 7

Input pull-up resistance RPUE ENS VIL = 0.0 V 25 50 200 kΩ

RPUP XPD VIL = 0.0 V 500 800 1200

MB88151A

DS04-29127-2E 11

• AC Characteristics

(Ta = − 40 °C to + 85 °C, VDD = 3.3 V ± 0.3 V, VSS = 0.0 V)

Note : The modulation clock stabilization wait time is required after the power is turned on, the IC recovers from

power saving, or after FREQ (frequency range) or ENS (modulation ON/OFF) setting is changed. For the

modulation clock stabilization wait time, assign the maximum value for lock-up time.

Parameter Symbol Pin Conditions Value Unit

Min Typ Max

Oscillation frequency fxXIN,

XOUT

Fundamental

oscillation 8.3 ⎯33.4 MHz

Input frequency fin XIN

External clock input

(multiply-by-1, 2, 4,

divided by 2)

16.6 ⎯33.4

MHz

External clock input

(multiply-by-8) 8.3 ⎯16.7

Output frequency fOUT CKOUT

MB88151A-100/101

(Multiply by 1) 16.6 ⎯33.4

MHz

MB88151A-200/201

(Multiply by 2) 33.2 ⎯66.8

MB88151A-400/401

(Multiply by 4) 66.4 ⎯133.6

MB88151A-500/501

(2-frequency division) 8.3 ⎯16.7

MB88151A-800/801

(multiply-by-8) 66.4 ⎯133.6

Output slew rate SR CKOUT 0.4 V to 2.4 V

Load capacitance 15 pF 0.4 ⎯4.0 V/ns

Output clock duty cycle tDCC CKOUT 1.5 V 40 ⎯60 %

Modulation period

(Number of input clocks

per modulation)

fMOD

(nMOD) CKOUT

MB88151A-100/101,

MB88151A-200/201,

MB88151A-400/401,

MB88151A-500/501

fin/2200

(2200)

fin/1900

(1900)

fin/1600

(1600)

kHz

(clks)

MB88151A-800/801 fin/880

(880)

fin/760

(760)

fin/640

(640)

kHz

(clks)

Lock-up time tLK CKOUT 8.3 MHz to 80 MHz ⎯25

80 MHz to 133.6 MHz ⎯38

Cycle-cycle jitter tJC CKOUT

MB88151A-100/101,

MB88151A-200/201

No load capacitance,

Ta = + 25 °C, VDD = 3.3 V

⎯⎯100

ps-rms

MB88151A-400/401,

MB88151A-800/801

No load capacitance,

Ta = + 25 °C, VDD = 3.3 V

⎯⎯150

MB88151A-500/501

No load capacitance,

Ta = + 25 °C, VDD = 3.3 V

⎯⎯200

MB88151A

12 DS04-29127-2E

MB88151A contains the modulation period to realize the efficient EMI reduction.

The modulation period fMOD depends on the input frequency and changes between fMOD (Min) and fMOD (Max) .

Furthermore, the average value of fMOD equals the typical value of the electrical characteristics.

MOD

(Min) f

MOD

(Max)

Modulation waveform

Clock time

nMOD (Max)

f (Output frequency)

Clock time

nMOD (Min)

MB88151A

DS04-29127-2E 13

■OUTPUT CLOCK DUTY CYCLE (tDCC = tb/ta)

■INPUT FREQUENCY (fin = 1/tin)

■OUTPUT SLEW RATE (SR)

■CYCLE-CYCLE JITTER (tJC = | tn − tn+1 |)

CKOUT

1.5 V

0.8 VDD

tin

XIN

2.4 V

0.4 V

tftr

CKOUT

Note : SR = (2.4 − 0.4) /tr, SR = (2.4 − 0.4) /tf

tn+1tn

CKOUT

Note : Cycle-cycle jitter is defined the difference between a certain cycle and immediately after

(or, immediately before) .

MB88151A

14 DS04-29127-2E

■MODULATION WAVEFORM

fMOD

− 1.5 %

+ 1.5 %

fMOD

− 1.0 %

− 0.5 %

• ±1.5% modulation rate, Example of center spread

• −1.0% modulation rate, Example of down spread

CKOUT

Output frequency

CKOUT

Output frequency

Frequency at modulation OFF

Time

MB88151A

DS04-29127-2E 15

■LOCK-UP TIME

If the setting pin is fixed at the “H” or “L” level, the maximum time after the power is turned on until the set clock

signal is output from CKOUT pin is (the stabilization wait time of input clock to XIN pin) + (the lock-up time “tLK”).

For the input clock stabilization time, check the characteristics of the resonator or oscillator used.

For modulation enable control using the ENS pin during normal operation, the set clock signal is output from

CKOUT pin at most the lock-up time (tLK) after the level at the ENS pin is determined.

Note : When the pin setting is changed, the CKOUT pin output clock stabilization time is required. Until the output

clock signal becomes stable, the output frequency, output clock duty cycle, modulation period, and cycle-

cycle jitter cannot be guaranteed. It is therefore advisable to perform processing such as cancelling a reset

of the device at the succeeding stage after the lock-up time.

3.0 V

VDD

XIN

VIH

CKOUT

Setting pin

SEL0,

SEL1,

ENS

Internal clock

stabilization wait time

tLK

(lock-up time )

XIN

ENS

CKOUT

tLK

(lock-up time ) tLK

(lock-up time )

MB88151A

16 DS04-29127-2E

When the power down is controlled by XPD pin, the desired clock is obtained after the pin is set to H level until

the maximum lock-up time tLK is elapsed.

XPD

XIN

CKOUT

Internal clock

stabilization wait time

tLK

(lock-up time)

MB88151A

DS04-29127-2E 17

■OSCILLATION CIRCUIT

The figure below shows the connection example about general resonator. The oscillation circuit has the built-in

resistance (1 MΩ) . The value of capacity (C1 and C2) is required adjusting to the most suitable value of individual

resonator.

The most suitable value is different by individual resonator. Please refer to the resonator manufacturer which

you use for the most suitable value.

Input the clock to XIN pin, and do not connect anything with XOUT pin if you use the external clock (you do not

use the resonator).

Rf (1 MΩ)

XIN Pin

MB88151A LSI Internal

MB88151A LSI External

XOUT Pin

• When using the resonator

• When using an external clock

OPEN

Rf (1 MΩ)

Note : Note that a jitter characteristic of an input clock may cause an affect a cycle-cycle jitter

characteristic.

MB88151A LSI Internal

MB88151A LSI External

XOUT Pin

XIN Pin

External clock

MB88151A

18 DS04-29127-2E

■INTERCONNECTION CIRCUIT EXAMPLE

MB88151A

C1C2

C4C3

SEL0

SEL1

Xtal

ENS

C1, C2 : Oscillation stabilization capacitance (refer to “■OSCILLATION CIRCUIT”.)

C3 : Capacitor of 10 µF or higher

C4 : Capacitor about 0.01 µF (connect a capacitor of good high frequency

property (ex. laminated ceramic capacitor) to close to this device.)

R1 : Impedance matching resistor for board pattern

MB88151A

DS04-29127-2E 19

■SPECTRUM EXAMPLE CHARACTERISTICS

The condition of the examples of the characteristic is shown as follows : Input frequency = 20 MHz (Output

frequency = 20 MHz : Using MB88151A-100 (Multiply-by-1)), Power - supply voltage = 3.3 V, None load capacity,

Modulation rate = ± 1.5% (center spread).

Spectrum analyzer HP4396B is connected with CKOUT. The result of the measurement with RBW = 1 kHz

(ATT use for − 6dB).

CH B Spectrum 10 dB /REF 0 dBm

Avg

RBW# 1 kHZVBW 1 kHZATT 6 dB

CENTER 20 MHZ

SWP 2.505 s

SPAN 4 MHZ

No modulation

−6.54 dBm

±1.5% modulation

−24.45 dBm

MB88151A

20 DS04-29127-2E

■ORDERING INFORMATION

Part number Input frequency

range

Multiplier

ratio

Output frequency

range Package Remarks

MB88151APNF-G-100-JNE1

MB88151APNF-G-101-JNE1

16.6 MHz to

33.4 MHz

Multiply-

by-116.6 MHz to 33.4 MHz

8-pin plastic

SOP

(FPT-8P-M02)

MB88151APNF-G-200-JNE1

MB88151APNF-G-201-JNE1

Multiply-

by-233.2 MHz to 66.8 MHz

MB88151APNF-G-400-JNE1

MB88151APNF-G-401-JNE1

Multiply-

by-466.4 MHz to 133.6 MHz

MB88151APNF-G-500-JNE1

MB88151APNF-G-501-JNE1

Multiply-

by-1/2 8.3 MHz to 16.7 MHz

MB88151APNF-G-800-JNE1

MB88151APNF-G-801-JNE1

8.3 MHz to

16.7 MHz

Multiply-

by-866.4 MHz to 133.6 MHz

MB88151APNF-G-100-JNEFE1

MB88151APNF-G-101-JNEFE1

16.6 MHz to

33.4 MHz

Multiply-

by-116.6 MHz to 33.4 MHz

Emboss

taping

(EF type)

MB88151APNF-G-200-JNEFE1

MB88151APNF-G-201-JNEFE1

Multiply-

by-233.2 MHz to 66.8 MHz

MB88151APNF-G-400-JNEFE1

MB88151APNF-G-401-JNEFE1

Multiply-

by-466.4 MHz to 133.6 MHz

MB88151APNF-G-500-JNEFE1

MB88151APNF-G-501-JNEFE1

Multiply-

by-1/2 8.3 MHz to 16.7 MHz

MB88151APNF-G-800-JNEFE1

MB88151APNF-G-801-JNEFE1

8.3 MHz to

16.7 MHz

Multiply-

by-866.4 MHz to 133.6 MHz

MB88151APNF-G-100-JNERE1

MB88151APNF-G-101-JNERE1

16.6 MHz to

33.4 MHz

Multiply-

by-116.6 MHz to 33.4 MHz

Emboss

taping

(ER type)

MB88151APNF-G-200-JNERE1

MB88151APNF-G-201-JNERE1

Multiply-

by-233.2 MHz to 66.8 MHz

MB88151APNF-G-400-JNERE1

MB88151APNF-G-401-JNERE1

Multiply-

by-466.4 MHz to 133.6 MHz

MB88151APNF-G-500-JNERE1

MB88151APNF-G-501-JNERE1

Multiply-

by-1/2 8.3 MHz to 16.7 MHz

MB88151APNF-G-800-JNERE1

MB88151APNF-G-801-JNERE1

8.3 MHz to

16.7 MHz

Multiply-

by-866.4 MHz to 133.6 MHz

MB88151A

DS04-29127-2E 21

■PACKAGE DIMENSION

Please confirm the latest Package dimension by following URL.

http://edevice.fujitsu.com/package/en-search/

8-pin plastic SOP Lead pitch 1.27 mm

Package width

package length

3.9 × 5.05 mm

Lead shape Gullwing

Sealing method Plastic mold

Mounting height 1.75 mm MAX

Weight 0.06 g

8-pin plastic SOP

(FPT-8P-M02)

2002 FUJITSU LIMITED F08004S-c-4-7

1.27(.050)

3.90±0.30 6.00±0.40

.199 –.008

+.010

–0.20

+0.25

5.05

0.13(.005)

(.154±.012) (.236±.016)

0.10(.004)

0.44±0.08

(.017±.003)

–0.07

+0.03

0.22

.009 +.001

–.003

0.40(.016)

"A" 0~8

0.25(.010)

(Mounting height)

Details of "A" part

1.55±0.20

(.061±.008)

0.50±0.20

(.020±.008)

0.60±0.15

(.024±.006)

0.15±0.10

(.006±.004)

(Stand off)

0.10(.004)

Dimensions in mm (inches).

Note: The values in parentheses are reference values.

Note 1) *1 : These dimensions include resin protrusion.

Note 2) *2 : These dimensions do not include resin protrusion.

Note 3) Pins width and pins thickness include plating thickness.

Note 4) Pins width do not include tie bar cutting remainder.

MB88151A

22 DS04-29127-2E

■MAIN CHANGES IN THIS EDITION

Page Section Change Results

⎯⎯Preliminary Data Sheet → Data Sheet

MB88151A

DS04-29127-2E 23

MEMO

MB88151A

FUJITSU MICROELECTRONICS LIMITED

Shinjuku Dai-Ichi Seimei Bldg., 7-1, Nishishinjuku 2-chome,

Shinjuku-ku, Tokyo 163-0722, Japan

Tel: +81-3-5322-3347 Fax: +81-3-5322-3387

http://jp.fujitsu.com/fml/en/

For further information please contact:

North and South America

FUJITSU MICROELECTRONICS AMERICA, INC.

1250 E. Arques Avenue, M/S 333

Sunnyvale, CA 94085-5401, U.S.A.

Tel: +1-408-737-5600 Fax: +1-408-737-5999

http://www.fma.fujitsu.com/

Europe

FUJITSU MICROELECTRONICS EUROPE GmbH

Pittlerstrasse 47, 63225 Langen, Germany

Tel: +49-6103-690-0 Fax: +49-6103-690-122

http://emea.fujitsu.com/microelectronics/

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FUJITSU MICROELECTRONICS KOREA LTD.

206 Kosmo Tower Building, 1002 Daechi-Dong,

Gangnam-Gu, Seoul 135-280, Republic of Korea

Tel: +82-2-3484-7100 Fax: +82-2-3484-7111

http://kr.fujitsu.com/fmk/

Asia Pacific

FUJITSU MICROELECTRONICS ASIA PTE. LTD.

151 Lorong Chuan,

#05-08 New Tech Park 556741 Singapore

Tel : +65-6281-0770 Fax : +65-6281-0220

http://www.fmal.fujitsu.com/

FUJITSU MICROELECTRONICS SHANGHAI CO., LTD.

Rm. 3102, Bund Center, No.222 Yan An Road (E),

Shanghai 200002, China

Tel : +86-21-6146-3688 Fax : +86-21-6335-1605

http://cn.fujitsu.com/fmc/

FUJITSU MICROELECTRONICS PACIFIC ASIA LTD.

10/F., World Commerce Centre, 11 Canton Road,

Tsimshatsui, Kowloon, Hong Kong

Tel : +852-2377-0226 Fax : +852-2376-3269

http://cn.fujitsu.com/fmc/en/

Specifications are subject to change without notice. For further information please contact each office.

The contents of this document are subject to change without notice.

Customers are advised to consult with sales representatives before ordering.

The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose

of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS

does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating

the device based on such information, you must assume any responsibility arising out of such use of the information.

FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information.

Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use

or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS

or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or

other right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual

property rights or other rights of third parties which would result from the use of information contained herein.

The products described in this document are designed, developed and manufactured as contemplated for general use, including without

limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured

as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to

the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear

facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon

system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).

Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising

in connection with above-mentioned uses of the products.

Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by

incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current

levels and other abnormal operating conditions.

Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of

the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.

The company names and brand names herein are the trademarks or registered trademarks of their respective owners.

Edited: Business & Media Promotion Dept.