DG9232E, DG9233E, DG9234E
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1 pC Charge Injection, 100 pA Leakage, +5 V / +3 V,
Dual SPST Analog Switches
DESCRIPTION
The DG9232E, DG9233E, and DG9234E are monolithic
CMOS switches designed for precision signal switching.
The 17 low voltage parts feature low charge injection,
leakage, parasitic capacitance, and fast switching.
The DG9232E, DG9233E, and DG9234E can switch both
analog and digital signals. Each switch conducts equally
well in both directions when on, and blocks up to the power
supply level when off.
The DG9232E, DG9233E, and DG9234E contain two
independent single pole single throw (SPST) switches.
Switch-1 and switch-2 are normally closed for the DG9232E
and normally open for the DG9233E. For the DG9234E,
switch-1 is normally open and switch-2 is normally closed
with a break-before-make switching timing.
The DG9232E, DG9233E, and DG9234E offer 1 nW typical
power consumption and 8 kV ESD/HBM, 1 kV ESD/CDM
tolerance. They are the ideal switches for use in low voltage
instruments and healthcare devices, fitting the circuits of
low voltage ADC and DAC, sample and hold, analog front
end gain control, and signal path control. The DG9232E,
DG9233E, and DG9234E are available in 8-lead MSOP and
SOIC packages.
BENEFITS
Low charge injection and leakage
Low parasitic capacitance
Fast switching speed
High ESD tolerance
FEATURES
1 pC charge injection
Guaranteed 100 pA maximum switch on
leakage at 25 °C
3.8 pF switch off and 7.8 pF switch on
capacitances
+2.7 V to +5 V single supply operation
Low on-resistance - RDS(on): 17 / typ. at 5 V
•t
ON: 32 ns, tOFF: 10 ns switching time
Typical power consumption: 1 nW
Over voltage tolerant TTL / CMOS compatible
ESD (HBM): 8000 V, ESD (CDM): 1000 V
Latch-up current: > 300 mA (JESD78)
Available in MSOP-8 and SOIC-8
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
APPLICATIONS
Automatic test equipment
Process control and automation
Data acquisition systems
Meters and instruments
Medical and healthcare systems
Communication systems
Sample-and-hold systems
Relay replacements
Battery powered systems
Available
Available
DG9232E, DG9233E, DG9234E
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S16-1451-Rev. A, 25-Jul-16 2Document Number: 75165
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic “0” 0.8 V
Logic “1” 2.4 V
Logic “0” 0.8 V
Logic “1” 2.4 V
Logic “0” 0.8 V
Logic “1” 2.4 V
Notes
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.5 mW/°C above 70 °C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
NC1V+
COM1IN1
IN2COM2
GND NC2
1
2
3
4
8
7
6
5
Top view
NO1V+
COM1IN1
IN2COM2
GND NO2
1
2
3
4
8
7
6
5
Top view
V+
GND
1
2
3
4
8
7
6
5
Top view
NO1
COM1IN1
IN2COM2
NC2
TRUTH TABLE - DG9232E
LOGIC SWITCH
0 On
1Off
TRUTH TABLE - DG9233E
LOGIC SWITCH
0 Off
1On
TRUTH TABLE - DG9234E
LOGIC SWITCH-1 SWITCH-2
0 Off On
1OnOff
ORDERING INFORMATION
TEMPERATURE
RANGE CONFIGURATION PACKAGE PART NUMBER MINIMUM ORDER /
PACKAGE QUANTITY
-40 °C to +85 °C
lead (Pb)-free
DG9232E
8-pin MSOP DG9232EDQ-T1-GE3 Tape and reel 2500 units
8-pin SOIC DG9232EDY-T1-GE3 Tape and reel 2500 units
8-pin SOIC DG9232EDY-GE3 Tube 500 units
DG9233E
8-pin MSOP DG9233EDQ-T1-GE3 Tape and reel 2500 units
8-pin SOIC DG9233EDY-T1-GE3 Tape and reel 2500 units
8-pin SOIC DG9233EDY-GE3 Tube 500 units
DG9234E
8-pin MSOP DG9234EDQ-T1-GE3 Tape and reel 2500 units
8-pin SOIC DG9234EDY-T1-GE3 Tape and reel 2500 units
8-pin SOIC DG9234EDY-GE3 Tube 500 units
ABSOLUTE MAXIMUM RATINGS
PARAMETER LIMIT UNIT
Reference V+ to GND -0.3 to +6 V
IN, COM, NC, NO a-0.3 to (V+ + 0.3)
Continuous current (any terminal) ± 20 mA
Peak current (pulsed at 1 ms, 10 % duty cycle) ± 40
ESD (HBM) (MIL-STD-883, method 3015) > 8000 V
ESD (CDM) (ANSI / ESDA / JEDEC® JS-002) > 1000 V
Latch up current, per JESD78 300 mA
Storage temperature D suffix -65 to +125 °C
Power dissipation (packages) b 8-pin narrow body SOIC c400 mW
DG9232E, DG9233E, DG9234E
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S16-1451-Rev. A, 25-Jul-16 3Document Number: 75165
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Notes
a. Room = 25 °C, full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Difference of min. and max. values.
g. Guaranteed by 5 V leakage tests, not production tested.
SPECIFICATIONS (V+ = 3 V)
PARAMETER SYMBOL
TEST CONDITIONS
OTHERWISE UNLESS SPECIFIED
V+ = 3 V, ± 10 %, VIN = 0.8 V or 2.4 V e
TEMP.
a
D SUFFIX
-40 °C to +85 °C UNIT
MIN. c TYP.
bMAX. c
Analog Switch
Analog signal range dVANALOG Full 0 - 3 V
Drain-source on-resistance RDS(on) VNO or VNC = 1.5 V, V+ = 2.7 V
ICOM = 5 mA
Room - 35 50
Full - 35 65
RDS(on) match dRDS(on) VNO or VNC = 1.5 V Room - 0.4 2
RDS(on) flatness dRDS(on)
flatness VNO or VNC = 1 V and 2 V Room - 4 8
NO or NC off leakage current gINO/NC(off) VNO or VNC = 1 V/2 V, VCOM = 2 V/1 V Room -100 5 100
pA
Full -5000 5 5000
COM off leakage current gICOM(off) VCOM = 1 V/2 V, VNO or VNC = 2 V/1 V Room -100 5 100
Full -5000 5 5000
Channel-on leakage current gICOM(on) VCOM = VNO or VNC = 1 V/2 V Room -200 5 200
Full -10 000 5 10 000
Digital Control
Input current IINL or IINH Full - 0.001 - μA
Dynamic Characteristics
Turn-on time tON
VNO or VNC = 1.5 V
Room - 43 120
ns
Full - - 200
Turn-off time tOFF
Room - 16 50
Full - - 120
Charge injection dQINJ CL = 1 nF, VGEN = 0 V, RGEN = 0 Room - -0.28 - pC
Off-isolation OIRR RL = 50 , CL = 5 pF, f = 1 MHz Room - -80 - dB
Crosstalk XTALK Room - -108 -
NC and NO capacitance CS(off)
f = 1 MHz
Room - 4 -
pFChannel-on capacitance CCOM(on) Room - 8 -
COM-off capacitance CCOM(off) Room - 4 -
Power Supply
Positive supply range V+ 2.7 - 5.5 V
Power supply current I+ V+ = 3.3 V, VIN = 0 V or 3.3 V 0.0003 - 1 μA
DG9232E, DG9233E, DG9234E
www.vishay.com Vishay Siliconix
S16-1451-Rev. A, 25-Jul-16 4Document Number: 75165
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Notes
a. Room = 25 °C, full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Difference of min. and max. values.
SPECIFICATIONS (V+ = 5 V)
PARAMETER SYMBOL
TEST CONDITIONS
OTHERWISE UNLESS SPECIFIED
V+ = 5 V, ± 10 %, VIN = 0.8 V or 2.4 V e
TEMP. a
D SUFFIX
-40 °C to +85°C UNIT
MIN. c TYP.
bMAX. c
Analog Switch
Analog signal range dVANALOG Full 0 - 5 V
Drain-source on-resistance RDS(on) VNO or VNC = 3.5 V, V+ = 4.5 V
ICOM = 5 mA
Room - 17 25
Full - 17 35
RDS(on) match dRDS(on) VNO or VNC = 3.5 V Room - 0.4 2
RDS(on) flatness dRDS(on)
flatness VNO or VNC = 1 V, 2 V, and 3 V Room - 3.5 6
NO or NC off leakage current gINO/NC(off) VNO or VNC = 1 V/4 V, VCOM = 4 V/1 V Room -100 10 100
pA
Full -5000 10 5000
COM off leakage current ICOM(off) VCOM = 1 V/4 V, VNO or VNC = 4 V/1 V Room -100 10 100
Full -5000 10 5000
Channel-on leakage current ICOM(on) VCOM = VNO or VNC = 1 V/4 V Room -200 - 200
Full -10 000 - 10 000
Digital Control
Input current IINL or IINH Full - 0.001 - μA
Dynamic Characteristics
Turn-on time tON
VNO or VNC = 3 V
Room - 32 75
ns
Full - - 150
Turn-off time tOFF
Room - 10 50
Full - - 100
Charge injection dQINJ CL = 1 nF, VGEN = 0 V, RGEN = 0 Room - -0.78 - pC
Off-isolation OIRR RL = 50 , CL = 5 pF, f = 1 MHz Room - -80 - dB
Crosstalk XTALK Room - -108 -
NC and NO capacitance C(off)
f = 1 MHz
Room - 3.8 -
pFChannel-on capacitance CD(on) Room - 7.8 -
COM-off capacitance CD(off) Room - 3.8 -
Power Supply
Positive supply range V+ 2.7 - 5.5 V
Power supply current I+ V+ = 5.5 V, VIN = 0 V or 5.5 V - - 1 μA
DG9232E, DG9233E, DG9234E
www.vishay.com Vishay Siliconix
S16-1451-Rev. A, 25-Jul-16 5Document Number: 75165
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Analog Voltage
On-Resistance vs. Analog Voltage
Leakage Current vs. Temperature
On-Resistance vs. Analog Voltage
Leakage Current vs. Analog Voltage
Supply Current vs. Input Voltage
10
100
1000
10000
0
5
10
15
20
25
30
35
012345
Axis Title
1st line
2nd line
2nd line
RON - On-Resistance (Ω)
VCOM - Analog Voltage (V)
2nd line
V+ = 3 V
V+ = 5 V
TA= 25 °C
INO/NC = 5 mA
10
100
1000
10000
0
5
10
15
20
25
30
012345
Axis Title
1st line
2nd line
2nd line
RON - On-Resistance (Ω)
VCOM - Analog Voltage (V)
2nd line
+85 °C
+25 °C -40 °C
V+ = 5 V
INO/NC = 5 mA
10
100
1000
10000
-250
-200
-150
-100
-50
0
50
100
150
-40-20 0 20406080100
Axis Title
1st line
2nd line
2nd line
Leakage Current (pA)
Temperature (°C)
2nd line
ICOM(OFF),V
COM = 1 V, VNO/NC = 4 V
ICOM(ON),V
COM = 4 V
INO/NC(OFF),V
COM = 1 V, VNO/NC = 4 V
INO/NC(OFF),V
COM = 4 V, VNO/NC = 1 V
ICOM(ON),V
COM = 1 V
ICOM(OFF),V
COM = 4 V, VNO/NC = 1 V
V+ = 5 V
10
100
1000
10000
10
15
20
25
30
35
40
0 0.5 1 1.5 2 2.5 3
Axis Title
1st line
2nd line
2nd line
R
ON
- On-Resistance (Ω)
V
COM
- Analog Voltage (V)
2nd line
+85 °C
+25 °C
-40 °C
V+ = 3 V
INO/NC = 5 mA
10
100
1000
10000
-250
-200
-150
-100
-50
0
50
100
012345
Axis Title
1st line
2nd line
2nd line
Leakage Current (pA)
VCOM - Analog Voltage (V)
2nd line
I
COM(OFF)
I
COM(ON)
I
NO/NC(OFF)
V+ = 5 V
-10
-5
0
5
10
15
20
25
30
35
40
012345
2nd line
I+ - Supply Current (A)
VIN - Input Voltage (V)
2nd line
V+ = 5 V
V+ = 3 V
DG9232E, DG9233E, DG9234E
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S16-1451-Rev. A, 25-Jul-16 6Document Number: 75165
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Switching Time vs. Temperature
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
Switching Time vs. Supply Voltage
OIRR, Off Isolation vs. Frequency
Capacitance
10
100
1000
10000
0
10
20
30
40
50
60
-40-20 0 20406080100
Axis Title
1st line
2nd line
2nd line
tON, tOFF - Switching Time (ns)
Temperature (°C)
2nd line
V+= 3 V, t
ON
V+= 3 V, t
OFF
V+ = 5 V, t
ON
V+ = 5 V, t
OFF
10
100
1000
10000
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2 2.5 3 3.5 4 4.5 5
Axis Title
1st line
2nd line
2nd line
VT- Switching Threshold (V)
V+ - Supply Voltage (V)
2nd line
V
IH
= -40 °C
V
IL
= 85 °C
V
IH
= 25 °C
V
IL
= 25 °C
10
100
1000
10000
-1.2
-1.1
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
012345
Axis Title
1st line
2nd line
2nd line
QINJ - Charge Injection (pC)
VNO/NC - Analog Voltage (V)
2nd line
V+ = 3 V
V+ = 5 V
10
100
1000
10000
0
10
20
30
40
50
60
70
80
2 2.5 3 3.5 4 4.5 5
Axis Title
1st line
2nd line
2nd line
tON, tOFF - Switching Time (ns)
V+ - Supply Voltage (V)
2nd line
tON
tOFF
10
100
1000
10000
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
100K 1M 10M 100M 1G
Axis Title
1st line
2nd line
2nd line
OIRR, Off Isolation (dB)
Frequency (Hz)
2nd line
V+ = 5 V
10
100
1000
10000
0
1
2
3
4
5
6
7
8
9
10
012345
Axis Title
1st line
2nd line
2nd line
Capacitance (pF)
VANALOG (V)
2nd line
V+ = 5 V
C
NO/NC(OFF)
C
COM(ON)
C
COM(OFF)
DG9232E, DG9233E, DG9234E
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S16-1451-Rev. A, 25-Jul-16 7Document Number: 75165
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TEST CIRCUITS
Fig. 1 - Switching Time
Fig. 2 - Break-Before-Make Interval
Fig. 3 - Charge Injection
Switch
Input
CL (includes xture and stray capacitance)
V+
IN
NO or NC
CL
35 pF
COM
Logic
Input
RL
300
VOUT
GND
V+
50 %
0 V
0 V
Logic
input
Switch
output
tON tOFF
Logic "1" = switch on
Logic input waveforms inverted for switches that have
the opposite logic sense.
0 V
Switch output
V
OUT
=V
COM
R
L
R
L
+R
ON
3 V
0.9 x VOUT
tr < 20 ns
tf < 20 ns
CL (includes fixture and stray capacitance)
NO or NC
V1
NO or NC
V2
0 V
3 V
0 V
Logic
input
Switch
output
VO
VNC = VNO
tr < 5 ns
tf < 5 ns
90 %
tDtD
COM1
V+
GND
V+
CL
35 pF
RL
300
COM2
DG9232E, DG9233E, DG9234E
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S16-1451-Rev. A, 25-Jul-16 8Document Number: 75165
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TEST CIRCUITS
Fig. 4 - Off-Isolation
Fig. 5 - Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75165.
IN
GND
NC or NO
0 V, 2.4 V
10 nF
COM
Off Isolation = 20 log
V
NC NO
V
COM
RL
Analyzer
V+
V+
COM
NC or NO
f = 1 MHz
IN
COM
GND
0 V, 2.4 V
Meter
HP4192A
impedance
analyzer
or equivalent
10 nF
V+
V+
Vishay Siliconix
Package Information
Document Number: 71192
11-Sep-06
www.vishay.com
1
DIM
MILLIMETERS INCHES
Min Max Min Max
A 1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q0°8°0°8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
4
3
12
5
6
87
HE
h x 45
C
All Leads
q0.101 mm
0.004"
L
BA
1
A
e
D
0.25 mm (Gage Plane)
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
S
NOTES:
1. Die thickness allowable is 0.203"0.0127.
2. Dimensioning and tolerances per ANSI.Y14.5M-1994.
3. Dimensions “D” and “E1” do not include mold flash or protrusions, and are
measured at Datum plane -H- , mold flash or protrusions shall not exceed
0.15 mm per side.
4. Dimension is the length of terminal for soldering to a substrate.
5. Terminal positions are shown for reference only .
6. Formed leads shall be planar with respect to one another within 0.10 mm at
seating plane.
7. The lead width dimension does not include Dambar protrusion. Allowable
Dambar protrusion shall be 0.08 mm total in excess of the lead width
dimension at maximum material condition. Dambar cannot be located on the
lower radius or the lead foot. Minimum space between protrusions and an
adjacent lead to be 0.14 mm. See detail “B” and Section “C-C”.
8. Section “C-C” to be determined at 0.10 mm to 0.25 mm from the lead tip.
9. Controlling dimension: millimeters.
10. This part is compliant with JEDEC registration MO-187, variation AA and BA.
11. Datums -A- and -B- to be determined Datum plane -H- .
12. Exposed pad area in bottom side is the same as teh leadframe pad size.
5
N N-1 A B C 0.20
(N/2) Tips)
2X
N/221
0.60
0.50
0.60
E
Top V iew
e
See Detail “B”
-H-
3
D-A-
Seating Plane
A1
A
6
C0.10
Side View
0.25
BSC
T4
L-C-
Seating Plane
0.07 R. Min
2 Places
Parting Line
Detail “A”
(Scale: 30/1)
0.48 Max
Detail “B”
(Scale: 30/1)
Dambar Protrusion
7
C0.08 MBSAS
b
b1
With Plating
Base Metal
c1c
Section “C-C”
Scale: 100/1
(See Note 8)
See Detail “A”
A20.05 S
C
C
ς
3
E1-B-
End View
e1
0.95
Package Information
Vishay Siliconix
Document Number: 71244
12-Jul-02 www.vishay.com
1
MSOP: 8−LEADS
JEDEC Part Number: MO-187, (Variation AA and BA)
N = 8L
MILLIMETERS
Dim Min Nom Max Note
A- - 1.10
A10.05 0.10 0.15
A20.75 0.85 0.95
b0.25 - 0.38 8
b10.25 0.30 0.33 8
c0.13 - 0.23
c10.13 0.15 0.18
D3.00 BS C 3
E4.90 BSC
E12.90 3.00 3.10 3
e0.65 BSC
e11.95 BSC
L0.40 0.55 0.70 4
N8 5
T0_4_6_
ECN: T-02080—Rev. C, 15-Jul-02
DWG: 5867
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72606
22 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-8
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.172
(4.369)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
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