Features
nUltra Low Capacitance < 22 fF
nExcellent RC Product < 0.10 pS
nHigh Switching Cutoff Frequency > 110 GHz
n5 Nanosecond Switching Speed
nDriven by Standard +5 V TTL PIN Diode Driver
nSilicon Nitride Passivation
nPolyamide Scratch Protection
Description
M/A-COM's MA4AGBLP912 is an Aluminum-Gallium-Arsenide
Anode Enhanced, Beam Lead PIN Diode. AlGaAs anodes, which
utilize M/A-COM’s patent pending hetero-junction technology,
produce less diode “On” resistance than conventional GaAs
devices. These devices are fabricated on a OMCVD epitaxial wafer
using a process designed for high device uniformity and extremely
low parasitics. The diodes themselves exhibit low series resistance
( 4 Ω ), low capacitance ( 20 fF ), and extremely fast switching
speed, ( 5 nS ). They are fully passivated with silicon nitride and
have an additional layer of a polymer for scratch protection. The
protective coating prevents damage to the junction and the anode
air bridges during handling.
Applications
The ultra low capacitance of the MA4AGBLP912 device allows
use through W-band (110 GHz) applications. The low RC product
and low profile of the PIN diodes makes it ideal for use in
microwave and millimeter wave switch designs, where lower
insertion loss and higher isolation are required. The + 10 mA ( low
loss state ) and the 0v ( isolation state ) bias of the diodes allows
the use a simple + 5 V TTL gate driver. These AlGaAs diodes are
used as switching arrays on radar systems, high-speed ECM
circuits, optical switching networks, instrumentation, and other
wideband multi-throw switch assemblies.
AlGaAs Beam Lead
PIN Diode
MA4AGBLP912
V 1.00
Outline ( Topview )
Absolute Maximum Ratings
@ +25 °C1
Parameter Maximum Rating
Operating Temperature -65 °C to +125 °C
Storage Temperature -65 °C to +150 °C
C.W. Incident RF Power + 23 dBm C. W.
Forward D.C. Current 40 mA
Reverse D.C. Voltage @ -10 µA -50 V
Mounting Temperature +235 °C for 10 sec.
1. Exceeding any of these values may result in permanent
damage
-
+
AlGaAs Beam Lead PIN Diode MA4AGBLP912
V 1.00
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
2
Electrical Specifications @ TA = 25 °C
Parameters and Test Conditions Units
Min.
Total Capacitance at -5 V at 10 GHz1 Ct fF - 20 22
Forward Resistance at +20 mA at 10 GHz 2 Rs Ohms - 4.0 4.9
Forward Voltage at +10 mA Vf Volts - 1.36 1.50
Leakage Current at -40 V Ir nA - -50 -300
Symbol and Unit Typ. Max.
Minority Carrier Lifetime TL nS - 5 10
1. Reverse Bias Capacitance is measured as a Single Series diode at -5 V in a 50 Ω test fixture at 10 GHz.
2. Forward Series Resistanc e is measured as a Single Series diode at 20 mA in a 50 Ω test fixture at 10 GHz.
NOTES:
AlGaAs Beam Lead PIN Diode MA4AGBLP912
V 1.00
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
3
General Handling
These devices have a polymer layer which provides scratch
protection for the junction area and the anode air bridge. Beam
lead devices must, however, be handled with extreme care
since the leads may easily be distorted or broken by the normal
pressures exerted when handled with tweezers. A vacuum
pencil with a #27 tip is recommended for picking and placing.
These devices were designed to be inserted onto hard or soft
substrates. Recommended methods of attachment include ther-
mocompression bonding, parallel-gap welding, solder reflow,
and electrically conductive silver epoxy.
See Application Note M541, “Bonding and Handling Proce-
dures for Chip Diode Devices” for More Detailed Assembly
Instructions.
Assembly Considerations
The following precautions should be observed to avoid
damaging these chips.
Cleanliness
These devices should be handled in a clean environment. Do
not attempt to clean die after installation.
Static Sensitivity
Aluminum Gallium Arsenide PIN diodes are Class 1 ESD
sensitive and can be damaged by static electricity. Proper ESD
techniques should be used when handling these devices.
Rs
Ct
Ls = 0.5 nH
Diode Model
AlGaAs Beam Lead PIN Diode MA4AGBLP912
V 1.00
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
4
Outline Dimensions — Topview and Sideview
Dim Mils mm
A 11.0 +/- 2.0 0.28 +/- 0.05
B 6.9 +/- 2.0 0.18 +/- 0.05
C 4.7 +/- 1.0 0.12 +/- 0.025
D 6.9 +/- 2.0 0.18 +/- 0.05
E 6.9 +/- 2.0 0.18 +/- 0.05
F 4.0+/- 2.0 0.10 +/- 0.05
G 24.8+/- 3.0 0.63 +/- 0.75
C
A
B
E D
F
G
AlGaAs Beam Lead PIN Diode MA4AGBLP912
V 1.00
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
5
Diode SPICE Values
MA4AGBPL912 SPICE Model
PinDiodeModel
Ffe= 1.0
Af=1.0
Imax= 0.04 A
Fc= 0.5
M= 0.5
Vj= 1.35 V
Cj0= 0.022 pF
Rs(I)= Rc + Rj(I) = 0.10 Ohm + Rj(I)
Tau= 10 nsec
Cjmin= 0.020 pF
Rr= 10 K Ohms
Wi= 3.0 um
µe-= 8600 cm^2/V-sec
Vi=0.0 V
Is=1.0E-14 A
wPmax= 100 mW
Kf= 0.0