Publication Order Number:
NDS351AN/D
NDS351AN
N-Channel, Logic Level, PowerTrench MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using ON Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are particularly suited for low voltage
applications in notebook computers, portable phones,
PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are
needed in a very small outline surface mount package.
Features
•1.4 A, 30 V. RDS(ON) = 160 mΩ @ VGS = 10 V
RDS(ON) = 250 mΩ @ VGS = 4.5 V
•Ultra-Low gate charge
•Industry standard outline SOT-23 surface mount
package using proprietary SuperSOTTM-3 design for
superior thermal and electrical capabilities
•High performance trench technology for extremely
low RDS(ON)
G
D
S
SuperSOT -3
TM
D
S
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
IDDrain Current – Continuous (Note 1a) 1.4 A
– Pulsed 10
Power Dissipation for Single Operation (Note 1a) 0.5
PD
(Note 1b) 0.46 W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 75
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
351A NDS351AN 7’’ 8mm 3000 units
NDS351AN
© 2003 Semiconductor Components Industries, LLC.
September-2017, Rev. 5
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2
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA30 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA,Referenced to 25°C26 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1µA
VDS = 24 V, VGS = 0 V, TJ = 55°C10 µA
IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA
On Characteristics (Note 2)
VGS(th)Gate Threshold Voltage VDS = VGS, ID = 250 µA0.8 2.1 3V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient ID = 250 µA,Referenced to 25°C–4 mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = 10 V, ID = 1.4 A
VGS = 4.5 V, ID = 1.2 A
V
GS
= 10 V, I
D
= 1.4 A, T
J
= 125°C
92
120
114
160
250
214
mΩ
ID(on) On–State Drain Current VGS = 4.5V, VDS = 5 V 3.5 A
gFS Forward Transconductance VDS = 5 V, ID = 1.4 A 4S
Dynamic Characteristics
Ciss Input Capacitance 145 pF
Coss Output Capacitance 35 pF
Crss Reverse Transfer Capacitance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz 15 pF
RGGate Resistance VGS = 15 mV, f = 1.0 MHz 1.6 Ω
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 3 6 ns
trTurn–On Rise Time 8 16 ns
td(off) Turn–Off Delay Time 16 29 ns
tfTurn–Off Fall Time
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
2 4 ns
QgTotal Gate Charge 1.3 1.8 nC
Qgs Gate–Source Charge 0.5 nC
Qgd Gate–Drain Charge
VDS = 15 V, ID = 1.4 A,
VGS = 4.5 V
0.5 nC
Drain–Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain–Source Diode Forward Current 0.42 A
VSD Drain–Source Diode Forward
Voltage VGS = 0 V, IS = 0.42 A (Note 2) 0.8 1.2 V
trr Diode Reverse Recovery Time IF = 1.4 A, diF/dt = 100 A/µs 11 nS
Qrr Diode Reverse Recovery Charge 4nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NDS351AN
Typical Characteristics
0
1
2
3
4
5
00.5 11.5 2
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
VGS = 10V
3.5V
6.0V 4.5V
3.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
012345
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 3.5V
10V
4.0V
6.0V
5.0V
4.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = 1.4A
VGS = 10V
0.075
0.1
0.125
0.15
0.175
0.2
0.225
0.25
3 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON)
, ON-RESISTANCE (OHM)
ID = 0.7A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation with
Temperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
22.5 33.5 4
VGS, GATE TO SOURCE VOLTAGE (V)
ID
, DRAIN CURRENT (A)
TA = 125oC
25oC-55oC
VDS = 5V
0.0001
0.001
0.01
0.1
1
10
00.2 0.4 0.6 0.8 11.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
TA = 125oC
25oC
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
NDS351AN
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3
Typical Characteristics
0
2
4
6
8
10
00.5 11.5 22.5 3
Qg, GATE CHARGE (nC)
VGS, GATE-SOURCE VOLTAGE (V)
ID =1.4A VDS = 10V 15V
20V
0
20
40
60
80
100
120
140
160
180
200
0 5 10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
CISS
COSS
CRSS
f = 1 MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 110 100
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
DC 1s100ms
100
µ
s
RDS(ON) LIMIT
VGS = 10V
SINGLE PULSE
RθJA = 270oC/W
TA = 25oC
10ms
1ms
0
1
2
3
4
5
0.01 0.1 1 10 100 1000
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 270°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
RθJA(t) = r(t) * RθJA
RθJA = 270oC/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
NDS351AN
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